Transistors Lecture 5 CS 350 S18 - Hale 1 CMOS transistors CS - PowerPoint PPT Presentation

Jan 28, 2023 •158 likes •357 views

Transistors Lecture 5 CS 350 S18 - Hale 1 CMOS transistors CS 350 S18 - Hale 2 CS 350 S18 - Hale 3 Crystalline silicon lattice CS 350 S18 - Hale 4 Group III (wants CS 350 S18 - Hale 5 CS 350 S18 - Hale 6 Group V (wants CS 350 S18 -

Transistors Lecture 5 CS 350 S18 - Hale 1
CMOS transistors CS 350 S18 - Hale 2
CS 350 S18 - Hale 3
Crystalline silicon lattice CS 350 S18 - Hale 4
Group III (wants CS 350 S18 - Hale 5
CS 350 S18 - Hale 6
Group V (wants CS 350 S18 - Hale 7
CS 350 S18 - Hale 8
Quartz Rock SiO 2
C (coal) SiO 2 + Heat + CS 350 S18 - Hale 10
Metallurgical Grade Si CS 350 S18 - Hale 11
Siemens Process CS 350 S18 - Hale 12
Pure silicon ingot CS 350 S18 - Hale 13
CS 350 S18 - Hale 14
Silicon Wafers CS 350 S18 - Hale 15
Photomask (for photolithography) CS 350 S18 - Hale 16
12 Å
voltage Gate length Oxide thickness
Dynamic power equation 2 * f P = C * V dd CS 350 S18 - Hale 19

Download Presentation

Download Policy: The content available on the website is offered to you 'AS IS' for your personal information and use only. It cannot be commercialized, licensed, or distributed on other websites without prior consent from the author. To download a presentation, simply click this link. If you encounter any difficulties during the download process, it's possible that the publisher has removed the file from their server.

Recommend

MTLE-6120: Advanced Electronic Properties of Materials Semiconductor transistors for logic and

1 MTLE-6120: Advanced Electronic Properties of Materials Semiconductor transistors for logic and memory Contents: Aside: vacuum tubes Bipolar junction transistors (BJT) Junction field effect transistors (JFET) Metal oxide

878 views • 25 slides

Which of the transistors below are on? 9k 9k A B 5V 5V 1k 1k -5V D C 6V 2V 4V

Which of the transistors below are on? 9k 9k A B 5V 5V 1k 1k -5V D C 6V 2V 4V Submit your answer on menti.com with code 24 34 75 ENGR 40M, Lecture 10: From logic gates to computers Steven Bell 17 July 2016 Two levels of

319 views • 16 slides

Last week Processor (CPU) made of millions of transistors Integrated circuits allow small

10/19/2009 Last week Processor (CPU) made of millions of transistors Integrated circuits allow small powerful CPUs Control Unit, ALU, Registers, Bus, Cache Co- and multi-core processors Moores law: transistors on chip

471 views • 15 slides

Formation of Structural Defects in AlGaN/GaN High Electron Mobility Transistors under Electrical

Formation of Structural Defects in AlGaN/GaN High Electron Mobility Transistors under Electrical Stress Transistors under Electrical Stress Prashanth Makaram 1 , Jungwoo Joh 2 , Carl V. Thompson 1 Jess A. del Alamo 2 and Tomas Palacios 2 1

441 views • 15 slides

UMBC A B M A L T F O U M B C I M Y O R T 1 (9/27/04) I E S R C E O V U

Advanced VLSI Design CMOS Processing Technology II CMPE 640 CMOS Processing Technology Isolation of transistors, i.e., their source and drains, from other transistors is needed to reduce electrical interactions between them. For technologies

512 views • 15 slides

Lieven Vandersypen Spin Qubit From transistors to quantum dots 1947 First transistor 1954 First

Lieven Vandersypen Spin Qubit From transistors to quantum dots 1947 First transistor 1954 First transistor radios From transistors to quantum dots 1958 First integrated circuit 1989 Intel 486 processor Low temperature operation Single

714 views • 15 slides

02/06/2015 8.1 Introduction to the BJT Chapter 8 Bipolar Junction Transistors NPN BJT: B E

02/06/2015 8.1 Introduction to the BJT Chapter 8 Bipolar Junction Transistors NPN BJT: B E C N + P N Since 1970, the high density and low-power advantage of Emitter Base Collector the MOS technology steadily eroded the BJTs

553 views • 5 slides

Charge transport in disordered organic field-effect transistors Eduard Meijer Charge transport

Charge transport in disordered organic field-effect transistors Eduard Meijer Charge transport in disordered organic field-effect transistors PROEFSCHRIFT ter verkrijging van de graad van doctor aan de Technische Universiteit Delft, op gezag

1.62k views • 144 slides

Towards Sub-10 nm Diameter III-V VNW Transistors Wenjie Lu, Xin Zhao, Jess A. del Alamo

Towards Sub-10 nm Diameter III-V VNW Transistors Wenjie Lu, Xin Zhao, Jess A. del Alamo Massachusetts Institute of Technology wenjie@mit.edu Task/Theme: 2655.001 Contents Motivation Digital etch in III-Vs III-As (InGaAs)

385 views • 19 slides

Ferroelectric Field Effect Ferroelectric Field Effect Transistors Transistors Reza M. Rad Rad

Ferroelectric Field Effect Ferroelectric Field Effect Transistors Transistors Reza M. Rad Rad Reza M. UMBC UMBC Based on pages 387- -403 of 403 of Nanoelectronics Nanoelectronics and and Based on pages 387 Information

246 views • 24 slides

I I I -V High-Electron Mobility Transistors on the path to THz operation J. A. del Alamo 1 and

I I I -V High-Electron Mobility Transistors on the path to THz operation J. A. del Alamo 1 and D.-H. Kim 2 1 Microsystems Technology Laboratories, MIT 2 Previously with Teledyne Scientific, now with Global Foundries I nternational Conference on

298 views • 29 slides

Lecture 33: Concurrency Moores law (Transistors per chip doubles every N years), where

Lecture 33: Concurrency Moores law (Transistors per chip doubles every N years), where N is roughly 2 (about 1 , 000 , 000 increase since 1971). Has also applied to processor speeds (with a different exponent). But predicted

694 views • 23 slides

Gate-All-Around Si Nanowire Transistors (SNWTs) for Extreme Scaling: Fabrication,

Gate-All-Around Si Nanowire Transistors (SNWTs) for Extreme Scaling: Fabrication, Characterization and Analysis Ru Huang Peking University (PKU) Beijing 100871, China 1 Outline Introduction Fabrication and integration Recent

703 views • 54 slides

EDA Challenges Technology allows for 100M transistors on a chip Good but point EDA

Policy-Based RTL Design Bhanu Kapoor and Bernard Murphy Atrenta Inc. Atrenta Inc | Page 1 EDA Challenges Technology allows for 100M transistors on a chip Good but point EDA solutions exit Time consuming due to complexity of designs

499 views • 10 slides

III-V Channel Transistors Jess A. del Alamo Professor Microsystems Technology Laboratories

III-V Channel Transistors Jess A. del Alamo Professor Microsystems Technology Laboratories MIT Acknowledgements: Students and collaborators: D. Antoniadis, J. Lin, W. Lu, A. Vardi, X. Zhao Sponsors: Applied Materials, DTRA, KIST,

962 views • 51 slides

Molecular Quantum-dot Cellular Automata (QCA): Beyond Transistors Craig S. Lent University of

Molecular Quantum-dot Cellular Automata (QCA): Beyond Transistors Craig S. Lent University of Notre Dame ND Collaborators : Greg Snider, Peter Kogge, Mike Niemier, Marya Lieberman, Thomas Fehlner, Alex Kandel, Alexei Orlov, Mo Liu,Yuhui Lu

911 views • 55 slides

The Legacy of Godfrey Stafford a Celebration Andrew Harrison Diamond Light Source RAL -

The Legacy of Godfrey Stafford a Celebration Andrew Harrison Diamond Light Source RAL - January 24 th 2014 The Legacy of Godfrey Stafford a Celebration Andrew Harrison Diamond Light Source RAL - January 24 th 2014 Running motorbike

340 views • 33 slides

The Incident Responders Toolkit the stuff they dont teach you in school Judith van Stegeren

The Incident Responders Toolkit the stuff they dont teach you in school Judith van Stegeren After my graduation After my graduation Where I work Skill set What I do What I do Case study: incident response Incident Response for fictional

709 views • 39 slides

Surface Damage in Silicon Devices E. Fretwurst University of Hamburg Institute for Experimental

Surface Damage in Silicon Devices E. Fretwurst University of Hamburg Institute for Experimental Physics 4. Detector Workshop of the Helmholtz Alliance Physics at the Terascale E. Fretwurst, Uni-Hamburg 4th Detector Workshop of the

781 views • 38 slides

LLCD will be the first high-rate space laser communications system that can be operated over a

LLCD will be the first high-rate space laser communications system that can be operated over a range ten times larger than the near-Earth ranges that have been demonstrated to date. from http://esc.gsfc.nasa.gov/267/271.html, enabled by

564 views • 37 slides

State of XT Software: The Year in Review The Year in Review David Wallace Director, Technical

State of XT Software: The Year in Review The Year in Review David Wallace Director, Technical Project Lead dbw@cray.com XT Year in Review Accomplishments over the last 12 months Brief Glimpse of Future May 8, 2008 Cray Inc. Proprietary

682 views • 19 slides

CENG 4480 L09 Memory 2 Bei Yu Reference : Chapter 11 Memories CMOS VLSI DesignA

CENG 4480 L09 Memory 2 Bei Yu Reference : Chapter 11 Memories CMOS VLSI DesignA Circuits and Systems Perspective by H.E.Weste and D.M.Harris 1 CENG4480 v.s. CENG3420 CENG3420: architecture perspective memory coherent

588 views • 44 slides

FPGAs: Why, When , and How to use them (with RFNoC ) Pt. 1 Martjn Braun, Nicolas Cuervo

FPGAs: Why, When , and How to use them (with RFNoC ) Pt. 1 Martjn Braun, Nicolas Cuervo FOSDEM 2017, SDR Devroom Schematjc of a typical SDR Very rough schematjc: Analog ADC/DAC FPGA GPP Stuff Lets ignore the analog

333 views • 17 slides

Software/firmware activities @ MZ Working concurrently on support of existent hardware and

Software/firmware activities @ MZ Working concurrently on support of existent hardware and pre-phase1 circuitry Software (Jan) and firmware (Uli) for JEM processors Software (Jan, Christian) and firmware (Christian, Patric, Stephan)

645 views • 7 slides