High temperature operation of SiC transistors ATW on Thermal Management, Los Gatos Cyril B UTTAY 1 , Marwan A LI 2 , Oriol A VINO 1 , 2 , Hervé M OREL 1 , Bruno A LLARD 1 1 Laboratoire Ampère, Lyon, France 2 Labinal Power Systems, SAFRAN Group, France 23/9/15 1 / 32
Outline Introduction High-Temperature behaviour of SiC Devices Packaging for high-temperature converters Conclusion 2 / 32
Outline Introduction High-Temperature behaviour of SiC Devices Packaging for high-temperature converters Conclusion 3 / 32
Automotive Vehicle Location Max Temp (° C) Drive train high temp location 177 Floor 85 Near radiator support structure 100 Back of alternator 160 Cooling circuit 120 Exhaust manifold 649 Most data: Kassakian, J. G. et al. “The Future of Electronics in Automobiles”, ISPSD, 2001, p 15-19 ◮ Low-cost, high-volume applications; ◮ Moving to higher voltages (12V->300V for hybrids) ◮ Little cooling headroom with silicon devices (T J =150 to 175° C) 4 / 32
Automotive Vehicle Location Max Temp (° C) Drive train high temp location 177 Floor 85 Near radiator support structure 100 Back of alternator 160 Cooling circuit 120 Exhaust manifold 649 Most data: Kassakian, J. G. et al. “The Future of Electronics in Automobiles”, ISPSD, 2001, p 15-19 ◮ Low-cost, high-volume applications; ◮ Moving to higher voltages (12V->300V for hybrids) ◮ Little cooling headroom with silicon devices (T J =150 to 175° C) 4 / 32
Automotive Vehicle Location Max Temp (° C) Drive train high temp location 177 Floor 85 Near radiator support structure 100 Back of alternator 160 Cooling circuit 120 Exhaust manifold 649 Most data: Kassakian, J. G. et al. “The Future of Electronics in Automobiles”, ISPSD, 2001, p 15-19 ◮ Low-cost, high-volume applications; ◮ Moving to higher voltages (12V->300V for hybrids) ◮ Little cooling headroom with silicon devices (T J =150 to 175° C) ➟ dedicated cooling circuit for power electronic systems 4 / 32
Aircraft The trend: ◮ Hydraulic, Pneumatic and Electric networks co-exist in current systems ◮ More-electric aircraft should reduce complexity ◮ objective: 1 MW on-board electrical power ◮ From mild to very harsh: ◮ Some system are located in the cabin ◮ Jet engine actuator will face -55° C to 225° C cycling ◮ Many systems are located in non-pressurised areas ◮ Long system life: around 30 years ◮ Reliability is the main concern 5 / 32
Aircraft The trend: ◮ Hydraulic, Pneumatic and Electric networks co-exist in current systems ◮ More-electric aircraft should reduce complexity ◮ objective: 1 MW on-board electrical power The environment: ◮ From mild to very harsh: ◮ Some system are located in the cabin ◮ Jet engine actuator will face -55° C to 225° C cycling ◮ Many systems are located in non-pressurised areas ◮ Long system life: around 30 years ◮ Reliability is the main concern 5 / 32
Aircraft The trend: ◮ Hydraulic, Pneumatic and Electric networks co-exist in current systems ◮ More-electric aircraft should reduce complexity ◮ objective: 1 MW on-board electrical power The environment: ◮ From mild to very harsh: ◮ Some system are located in the cabin ◮ Jet engine actuator will face -55° C to 225° C cycling ◮ Many systems are located in non-pressurised areas ◮ Long system life: around 30 years ◮ Reliability is the main concern 5 / 32
Aircraft The trend: ◮ Hydraulic, Pneumatic and Electric networks co-exist in current systems ◮ More-electric aircraft should reduce complexity ◮ objective: 1 MW on-board electrical power The environment: ◮ From mild to very harsh: ◮ Some system are located in the cabin ◮ Jet engine actuator will face -55° C to 225° C cycling ◮ Many systems are located in non-pressurised areas ◮ Long system life: around 30 years ◮ Reliability is the main concern 5 / 32
Aircraft The trend: ◮ Hydraulic, Pneumatic and Electric networks co-exist in current systems ◮ More-electric aircraft should reduce complexity ◮ objective: 1 MW on-board electrical power The environment: ◮ From mild to very harsh: ◮ Some system are located in the cabin ◮ Jet engine actuator will face -55° C to 225° C cycling ◮ Many systems are located in non-pressurised areas ◮ Long system life: around 30 years ◮ Reliability is the main concern 5 / 32
Space Exploration ◮ NASA missions to Venus and Jupiter ◮ Venus surface temperature : up to 480° C ◮ Pressure a few kilometres inside Jupiter: 100 bars, at 400° C ◮ Strong thermal cycling, as temperature can drop to 140K at night; ◮ Other awful conditions: winds, corrosive gases. . . 6 / 32
Deep oil/gas extraction ◮ Continuous operation, relatively low cycling ◮ Deep drilling: high ambient temperature (up to 225° C) ◮ Expected lifetime: 5 years ◮ Main requirement: sensors and datalogging ◮ Example of new applications: downhole gas compressor 7 / 32
Maximum operating temperature 3000°C Silicon 3C−SiC 6H−SiC 2500°C 4H−SiC 2H−GaN Junction temperature Diamond 2000°C 1500°C 1000°C 500°C 0°C 10 V 100 V 1 kV 10 kV 100 kV 1 MV Breakdown voltage Silicon operating temp is intrisically limited at high voltages. ◮ 1200 V devices rated at < 200 ° C junction temperature 8 / 32
Outline Introduction High-Temperature behaviour of SiC Devices Packaging for high-temperature converters Conclusion 9 / 32
Test configuration ◮ High temperature test system ◮ Silver-sintered interconnects ◮ Ceramic substrate (DBC) ◮ Copper-kapton leadframe ◮ DUT: 490 m Ω SiC JFET from SiCED ◮ characterization: ◮ Tektronix 371A curve tracer ◮ Thermonics T2500-E conditionner 10 / 32
Test configuration ◮ High temperature test system ◮ Silver-sintered interconnects ◮ Ceramic substrate (DBC) ◮ Copper-kapton leadframe ◮ DUT: 490 m Ω SiC JFET from SiCED ◮ characterization: ◮ Tektronix 371A curve tracer ◮ Thermonics T2500-E conditionner 10 / 32
Test configuration ◮ High temperature test system ◮ Silver-sintered interconnects ◮ Ceramic substrate (DBC) ◮ Copper-kapton leadframe ◮ DUT: 490 m Ω SiC JFET from SiCED ◮ characterization: Source: Thermonics T-2500E Datasheet ◮ Tektronix 371A curve tracer ◮ Thermonics T2500-E conditionner 10 / 32
Static Characterization of 490 m Ω JFET Buttay et Al. “Thermal Stability of Silicon Carbide Power JFETs” IEEE transactions on Electron Devices, 2013, 60, 4191-4198 12 -50 ◦ C -10 ◦ C 10 30 ◦ C 70 ◦ C Forward current [A] 8 110 ◦ C 150 ◦ C 6 190 ◦ C 230 ◦ C 270 ◦ C 4 300 ◦ C 2 0 0 2 4 6 8 10 12 Forward voltage [V] V GS = 0 V , i.e. device fully-on 11 / 32
Power dissipation as a function of the junction temp. 140 2.0 A 4.0 A 120 6.0 A Dissipated power [W] 8.0 A 100 10.0 A 80 60 40 20 0 50 0 50 100 150 200 250 300 Junction temperature [C] 12 / 32
Thermal Run-away mechanism – Principle ◮ The device characteristic ◮ Its associated cooling system ◮ In region A, the device dissipates more than the cooling system can extract ◮ In region B, the device dissipates less than the cooling system can extract ◮ Two equilibrium points: one stable and one unstable ◮ Above the unstable point, run-away occurs 13 / 32
Thermal Run-away mechanism – Principle ◮ The device characteristic ◮ Its associated cooling system ◮ In region A, the device dissipates more than the cooling system can extract ◮ In region B, the device dissipates less than the cooling system can extract ◮ Two equilibrium points: one stable and one unstable ◮ Above the unstable point, run-away occurs 13 / 32
Thermal Run-away mechanism – Principle ◮ The device characteristic ◮ Its associated cooling system ◮ In region A, the device dissipates more than the cooling system can extract ◮ In region B, the device dissipates less than the cooling system can extract ◮ Two equilibrium points: one stable and one unstable ◮ Above the unstable point, run-away occurs 13 / 32
Thermal Run-away mechanism – Principle ◮ The device characteristic ◮ Its associated cooling system ◮ In region A, the device dissipates more than the cooling system can extract ◮ In region B, the device dissipates less than the cooling system can extract ◮ Two equilibrium points: one stable and one unstable ◮ Above the unstable point, run-away occurs 13 / 32
Thermal Run-away mechanism – Principle ◮ The device characteristic ◮ Its associated cooling system ◮ In region A, the device dissipates more than the cooling system can extract ◮ In region B, the device dissipates less than the cooling system can extract ◮ Two equilibrium points: one stable and one unstable ◮ Above the unstable point, run-away occurs 13 / 32
Thermal Run-away mechanism – examples Always stable 14 / 32
Thermal Run-away mechanism – examples Always stable Always unstable 14 / 32
Thermal Run-away mechanism – examples Always stable Always unstable Becomming unstable with ambient temperature rise 14 / 32
Power dissipation as a function of the junction temp. 140 2.0 A 4.0 A 120 6.0 A Dissipated power [W] 8.0 A 100 10.0 A 80 60 40 20 0 50 0 50 100 150 200 250 300 Junction temperature [C] 15 / 32
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