Transceivers and semiconductor lasers for photonic networks - - PowerPoint PPT Presentation

Optical Navigation Division

Transceivers and semiconductor lasers for photonic networks

12/06/2007

Michele Agresti Michele Agresti TTC TTC-

• Avago Technologies Italy

Avago Technologies Italy Torino, ITALY Torino, ITALY

Avago Technologies Confidential Presentation title here Page 2

FOPD

Outline

Company overview Laser sources for pluggable transceiver world

Avago Technologies Confidential Presentation title here Page 3

FOPD

Company Overview

Field/Order Fulfillment R&D Facilities Manufacturing R&D and Manufacturing

Leading global manufacturer of analog, mixed signal and optoelectronics components Headquarters: San Jose, California and Singapore 6,500 employees service over 40,000 customers worldwide Over 1,000 analog designers with 2,000 patents and patent applications Global presence in North America, Europe and Asia

Avago Technologies Confidential Presentation title here Page 4

FOPD

Recent story from HP to Agilent…and Avago

March 2, 1999 HP announces creation of two independent companies

July 28, 1999 Agilent’s name is introduced November 18, 1999 Agilent’s IPO takes place

June 2, 2000 Agilent becomes fully independent November 1, 1999 Agilent starts operating as an independent company

Agilent

April 2000 TTC acquisition 1 December 2005 DAY 1Avago Technologies

Avago Technologies Confidential Presentation title here Page 5

FOPD

Company’s History

Avago Technologies dates back to the earliest days of Hewlett-Packard, the component group in HP that developed technically differentiated components needed by HP’s systems In 1999, the group spun off from HP as the second largest business group of Agilent Technologies – named Semiconductor Products Group (SPG) In 2005, was acquired by Kohlberg Kravis Roberts & Co. (KKR) and Silver Lake Partners to become the world’s largest private owned semiconductor company Avago Technologies has a rich heritage in RF, mixed signal and

• ptoelectronics innovation, and is the leader in many of its serviced markets

Avago Technologies Confidential Presentation title here Page 6

FOPD

Storage, Computing & Networking

Data storage Servers Storage arrays Switches and routers Service provider networking

Mobile

Wireless handsets Wireless infrastructure Wireless networking

Digital Consumer

Printers and imaging Laser and

• ptical mice

Digital TVs:

• LCD TVs
• Plasma TV’s

Automotive

Safety In-car infotainment Navigation Lighting

Industrial

Factory automation Motor controls Power generation

Serviced Markets

Avago Technologies Confidential Presentation title here Page 7

FOPD

Solutions for Storage, Computing and Networking

Networking ASICs Fiber Optics Printer ASICs, SOCs, Motion Control, Infrared, Optical Navigation

Avago Technologies Confidential Presentation title here Page 8

FOPD

Outline

Introduction

Datacom – telecom networks Pluggable solutions

10 Gb platforms and segmentation within the network 10 Gb devices and technologies for pluggable transceivers

Key design elements for high performances laser sources Direct modulation of uncooled laser sources Advanced laser sources for pluggable transceivers

Avago Technologies Confidential Presentation title here Page 9

FOPD Long Haul Metro Storage Enterprise

DATACOM application

a market which outperformed (vs. Telecom Market)

T E L ECOM application, single or WDM

a market which start recovering

Private networks Public networks

2-20 km 20-100 km

Today’s Network

Avago Technologies Confidential Presentation title here Page 10

FOPD

Size of the optical component market for datacom and telecom

47% 53%

DATACOM: SAN, LAN, Enterprise T E L ECOM: Long Haul, Metro, PON..

M

• s

t l y T r a n s c e i v e r s

Mostly discrete lasers, modulator, PD, Filters…., few transceivers

Avago Technologies Confidential Presentation title here Page 11

FOPD Traditional components Pluggable transceiver approach

• Multiple compact modules

per circuit card

• Pluggability: pay as you

go

• One bulky, pigtailed,

module per equipment circuit card

• Hand soldered assembly

Market is driving pluggable module solution

DATACOM and TELECOM trend: from discrete components to subsystems

Avago Technologies Confidential Presentation title here Page 12

FOPD

Optical coupling: Lens+Optical Isolator+Lens+pigtailed fiber Chip laser

DATACOM and TELECOM trend: from discrete components to subsystems

Butterfly Laser Module

Temperature control Back detector Electrical / RF connections

Avago Technologies Confidential Presentation title here Page 13

FOPD

~250 x 250 mm

LAMBDAPACK

• 2.5 DWDM Pluggable Transceiver
• Integrated heatsink
• Up to 8 modules side by side

~103 x 51 mm

Market is driving pluggable module solution Market is driving pluggable module solution

DATACOM and TELECOM trend: from discrete components to subsystems

Avago Technologies Confidential Presentation title here Page 14

FOPD

PLUGGABILITY

LASER SOURCES working @ HIGH OPERATING TEMPERATURE LOW POWER CONSUMPTION but NO COMPROMISES FOR PERFORMANCES

Cost reduction route for optical components

Stable and reliable technological processes

High Yield, high repeatability run-to-run

a technology ready for high volume/low cost production

Avago Technologies Confidential Presentation title here Page 15

FOPD

Outline

Introduction

Datacom – telecom networks Pluggable solutions

10 Gb platforms and segmentation within the network 10 Gb devices and technologies for pluggable transceivers

Key design elements for high performances laser sources Direct modulation of uncooled laser sources Advanced laser sources for pluggable transceivers

Avago Technologies Confidential Presentation title here Page 16

FOPD

10 Gb VCSEL @ 850nm 10 Gb FP @ 1300 nm 10 Gb DFB @ 1300 nm

EAM DFB

separation

ED08

10 Gb EML @ 1550 nm Tunable @ 1550 nm

Avago Technologies Confidential Presentation title here Page 17

FOPD

XENPAK is the first 10G Ethernet transceiver

• MSA date: March 2002
• dimension: 121x53 mm
• DATACOM

X2 is the next evolution to a smaller XAUI-based 10G Ethernet solution

• MSA date: March 2003
• dimension: 68x53 mm
• DATACOM

XFP is the next generation platform with a 10Gbit/s serial: data agnostic

• MSA date: April 2003
• dimension: 78x18 mm
• DATACOM/TELECOM

10Gb platforms

evolution

Avago Technologies Confidential Presentation title here Page 18

FOPD

Outline

Introduction

Datacom – telecom networks Pluggable solutions

10 Gb platforms and segmentation within the network 10 Gb devices and technologies for pluggable transceivers

Key design elements for high performances laser sources Direct modulation of uncooled laser sources Advanced laser sources for pluggable transceivers

Avago Technologies Confidential Presentation title here Page 19

FOPD

Semiconductor Lasers

1960 1960 1970 1970 1980 1980 1990 1990 2000 2000

GaAs-omojunction GaAs/GaAlAs- eterojunction InP/InGaAsP Short wavelength - compact disk High performance lasers for telecom Transceiver - datacom downturn telecom market

1962, Semiconductor lasers: GE,MIT, IBM, Un. Illinois 1969, R.T. semiconductor lasers 1972, Bell Labs,paper on DFB (Distributed Feed-Back) 1976, MIT first 1 um laser 1984 laser for compact disk 10.000.000 chp/year 1990, MQW laser 2000, uncooled laser

FOPD

Material systems for semiconductor lasers

FOPD

Carrier population generation Electrical injection Cavity Crystal Mirrors (FP)

• r Grating (DFB – DBR)

Active material Semiconductor layer with optical gain

electrical Heterojunction

• ptical

Optical waveguide

Semiconductor Laser is:

Confinements:

FOPD

Eg n p b) eterogiunzione in assenza di polarizzazione d) eterogiunzione in polarizzazione diretta p n

livelllo di Fermi

p n

livelllo di Fermi

Eg a) omogiunzione in assenza di polarizzazione c) omogiunzione in polarizzazione diretta p n

elettroni elettroni lacune lacune

• mojunction
• mojunction

heterojunction heterojunction

Electrical confinement

FOPD

1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 3.15 3.2 3.25 3.3 3.35 3.4 3.45 3.5 3.55

Refractive index wavelength (m)

InP

Q(g=1.1 m) Q(g=1.3 m) Q(g=1.55 m) Material In1-xGax AsyP1-y

Optical confinement

• stratop

strato n stratoattivo n

1

n

1

n

2

• 1

2

n2 > n1

FOPD

• Cavity modes

Cavity modes

Fabry-Perot resonator

• m

L 2 } Re{ 2

• Resonance equation(phase

condition)

Avago Technologies Confidential Presentation title here Page 25

FOPD

Fabry-Perot Laser

20 40 60 80 corrente (mA) 2 4 6 8 potenza (mW)

1280 1285 1290 1295 1300 1305

• 70
• 60
• 50
• 40
• 30
• 20

Wavelength (nm) Amplitude (dBm)

• Opt. Sp.: Path: LAB\osa

\fa36; Device:br00T20u; I = 30.0 mA; Peak: 1291.0 nm; 23-Jan-2003

• Ibias

Multimodal emission Short haul – not necessarily true…

Avago Technologies Confidential Presentation title here Page 26

FOPD

DFB Laser

Grating

• Phase shifted grating allows to get

100% single mode yield, for ideal AR/AR coatings on both facets

• 90+

b b+ = m ( / n) b = sin (1+sinm( / n)

2n 2n Bragg wavelength

1260 1270 1280 1290 1300 1310 1320 1330 1340 1350

• 80
• 70
• 60
• 50
• 40
• 30
• 20
• 10

Wavelength (nm)

• Rel. Amplitude (dB)

l Peak: 1306.7 nm; SMSR: 49 dB

Avago Technologies Confidential Presentation title here Page 27

FOPD

Simulation results

Threshold gain and gain margin between lasing mode and competitive mode varying grating phase Assumption: if gain margin >0.25 Single mode emission Yield=100% Phase shift value:

Avago Technologies Confidential Presentation title here Page 28

FOPD

MULTI QUANTUM WELL substrate: InP:n InP:p

MOCVD

1) Epitaxial growth

Epi growth substrate Epi layer

<10 nm

How we did it…… (1) Epitaxial growth

Avago Technologies Confidential Presentation title here Page 29

FOPD photoresist SiN 1) photolithography 1) photolithography 2) Chemical etch 2) Chemical etch luce UV mask

How we did it…… (2) Processing

Avago Technologies Confidential Presentation title here Page 30

FOPD

From 2”(5cm) wafer: up to 20.000 lasers

How we did it…… (3) Wafer cleaved in bars

Avago Technologies Confidential Presentation title here Page 31

FOPD

Wafer bars Coating /cleave Chips

How we did it…… (4) Scribing: from wafer to chip

Avago Technologies Confidential Presentation title here Page 32

FOPD

Outline

Introduction

Datacom – telecom networks Pluggable solutions

10 Gb platforms and segmentation within the network 10 Gb devices and technologies for pluggable transceivers

Key design elements for high performances laser sources Direct modulation of uncooled laser sources Advanced laser sources for pluggable transceivers

Avago Technologies Confidential Presentation title here Page 33

FOPD

Key design elements: ridge structure

Ridge structure

• No lateral blocking layers
• Very simple technological process

(one-step epi-growth)

• Suitable for Al-based lasers and low

cost devices

Ti Ti-

• Pt

Pt-

• Au metal

Au metal

SiO SiO2

2

Optimised facet cleavage process Optimised facet cleavage process Heat path Heat path Narrow reverse mesa (small cavity, fast chips) Narrow reverse mesa (small cavity, fast chips) Au plated pad Au plated pad

Avago Technologies Confidential Presentation title here Page 34

FOPD

Key design elements: active cavity design

w d L

• w/d fixed by single mode constrain
• Thickness d increases with number
• f wells improving dynamic

performances, but…..

• non uniform injection
• bimodal cavity

….if d is too high

• Reducing L, resonance frequency increases, but….
• Series resistance increases (lower w*L area )
• Thermal dissipation worsens

Bad P-I linearity at high T

Geometry

Avago Technologies Confidential Presentation title here Page 35

FOPD

Key design elements: active cavity design

For a DFB the lasing mode is at Bragg wavelength (about), then detuning gain peak - B is a design parameter gL gR

material gain for different carriers density (N)

• B on gain peak leads to minimize

threshold

• If B is blue-shifted respect to gp,

differential gain is higher (gL> gR) then, resonance frequency in higher (large modulation bandwidth) Optimization is needed for uncooled

• perations: B/T +0.08nm/°C and

gp/T +0.4 nm/°C

Detuning

Avago Technologies Confidential Presentation title here Page 36

FOPD

Key design element: MQW active material

Bulk laser: Lx = 0.1-0.3 m QW (Quantum Well) laser : Active layer Lx < 0.01 m

banda di valenza banda di conduzione

active

cladding cladding

x =growth

banda di conduzione banda di valenza E1c E2c E3c

h

E 1lh E 2lh E1hh E2hh E3hh

(Single Quantum Well) (Single Quantum Well)

Ec/g=0.67 Ev/Eg=0.33

GaAs/GaAlAs

Ec/ g=0.67 Ev/Eg=0.33

InP/InGaAsP

Ec/ g=0.75 Ev/Eg=0.25

InP/InGaAlAs

• MQW key features:
• gain

gain

• speed

speed

• temperature

temperature

Band structure SQW

Active layer

Avago Technologies Confidential Presentation title here Page 37

FOPD

Key design elements: MQW active material

Band-offset optimization to reduce heterobarrier (electrons) leakage current at high T

150 100 50 50 100 150 0.1 0.2

Level positions e hh

Ecbulk Ec Ev Ec = 0.057 eV 45 % Ev = 0.070 eV 55%

Ec < Ev Electron Leakage Possible solutions:

• wells/barriers strain
• different materials

InGaAsP/InGaAsP InGaAsP/InP for unstrain MQW (Ec:Ev = 40:60) for optimized strain (Ec:Ev = 50:50 or better) InGaAlAs/InP (Ec:Ev = 70:30) InGaAsN/GaAs (Ec:Ev = 80:20!) InGaAsP/InP for unstrain MQW (Ec:Ev = 40:60) for optimized strain (Ec:Ev = 50:50 or better) InGaAlAs/InP (Ec:Ev = 70:30) InGaAsN/GaAs (Ec:Ev = 80:20!)

Avago Technologies Confidential Presentation title here Page 38

FOPD

10 20 30 40 50 60 70 80 90 100 5 10 15 20 25 30 35 40 45 Current (mA); - 09-Aug-2002 Power (mW)

T=20-100 ºC

10 20 30 40 50 60 70 80 90 100 5 10 15 20 25 30 35 40

10 20 30 40 50 60 70 80 90 100 Current (mA); - 20-Aug 2004 5 10 15 20 25 30 35 40 Power (mW)

T=20-100 ºC

InGaAsP-based MQW InGaAsP-based MQW InGaAsAl-based MQW InGaAsAl-based MQW

MQW active material optimization

T0=95 K T0=48 K

Avago Technologies Confidential Presentation title here Page 39

FOPD

Outline

Introduction

Market downturn and recovering Pluggable solutions

10 Gb platforms and segmentation within the network 10 Gb devices and technologies for pluggable transceivers

Key design elements for high performances laser sources Direct modulation of uncooled laser sources Advanced laser sources for pluggable transceivers

Avago Technologies Confidential Presentation title here Page 40

FOPD

Modulation of lasers sources

Transmit information: Intensity modulation of laser source

• Intensity modulation by:

External modulator: expensive

• (long haul only)

Direct modulation: cheap/simple

• short haul
• (<200 km @ 2.5 Gb, 30 km @ 10Gb)

need high frequency devices

• So we want uncooled, low cost laser … and fast!!!

Avago Technologies Confidential Presentation title here Page 41

FOPD

Key features for direct modulation

Wide bandwidth High modulation efficiency Low Noise (RIN) High temperature range (uncooled) Low back reflection sensitivity Low chirp

Current Optical power

Bias Modulation “0” level “1” level Threshold

P(0) P(1) Eye mask experimental Eye aperture Eye amplitude simulated

Avago Technologies Confidential Presentation title here Page 42

FOPD

A bit stream like this can be heavily distorted passing through a non ideal channel; bit shape can be broadened and spread out of its time slot,

• verlapping on its neighbours : this is called “InterSymbol

Interference (ISI)”

Recalls of digital communications

Avago Technologies Confidential Presentation title here Page 43

FOPD A picture like this gives little information on signal distortion

To better evaluate signal distortion an “Eye Diagram” is built The eye diagram is obtained by slicing the bit sequence in one (or more) bit time slots and overlapping them.

Bit 1&2 Bit 1&2&3 Bit 1&2&3&4 Bit 1…5 Bit 1…8 Bit 1…32 Bit 1…127 First 32 bits of a longer bit sequence Bit 1…12 Bit 1…18 Bit 1…24 Bit 1 2 3 4 5 6 7 8 9 10

Recalls of digital communications (2)

Avago Technologies Confidential Presentation title here Page 44

FOPD Jitter : DJ deterministic or pattern dependent jitter RJ random jitter Eye mask Eye aperture Eye amplitude experimental simulated

Main parameters of eye diagram

Avago Technologies Confidential Presentation title here Page 45

FOPD

Outline

Introduction

Datacom and telecom networks Pluggable solutions

10 Gb platforms and segmentation within the network 10 Gb devices and technologies for pluggable transceivers

Key design elements for high performances laser sources Direct modulation of uncooled laser sources Advanced laser sources for pluggable transceivers

Avago Technologies Confidential Presentation title here Page 46

FOPD

Uncooled InGaAlAs ridge FP laser for 10GBASE- LRM product (300 m MMF)

Device design:

• Active layer: Al based material

Designed to enhance T0

• 9 InGaAlAs 55Å wells; strain +0.8%
• 8 InGaAlAs100Å barriers; strain –0.4%
• 2xSCH1: InGaAlAs 350Å
• 2xSCH2: InAlAs 500Å
• Device technology:

High yield/low cost/Al compatible

• Reversed mesa ridge
• Auto-aligned mesa
• Optical cavity:

Very fast chip at high T operation

• Narrow cavity volume
• Hr coating optimised versus both

Temperature and speed

200 m long x 250 m wide device Post Deadline Paper at OFC 2005

Avago Technologies Confidential Presentation title here Page 47

FOPD

Device results - static

20 °C base chip temperature:

• Threshold 7.6 mA
• High power 23 mW

85 °C base chip temperature:

• threshold 15.6 mA
• power 16.8 mW

95 °C base chip temperature:

• threshold as low as 18 mA
• Still more than 15 mW

10 20 30 40 50 60 70 80 90 100 5 10 15 20 25 fa021a

k113: Optical Power (T=20, 40, 60, 80, 85, 90, 95 °C)

Current (mA); - 23-Dec-2004 Power (mW)

T=20ºC; Ith= 7.6mA; P

Ith+30

= 8.9mW; Pmax = 23.8mW T=40ºC; Ith= 9.3mA; P

Ith+30

= 8.5mW, Pratio,Ith+30 =0.95; Pmax = 22.4mW T=60ºC; Ith=11.5mA; P

Ith+30

= 7.8mW, Pratio,Ith+30 =0.88; Pmax = 20.0mW T=80ºC; Ith=14.5mA; P

Ith+30

= 7.1mW, Pratio,Ith+30 =0.80; Pmax = 17.4mW T=85ºC; Ith=15.6mA; P

Ith+30

= 6.9mW, Pratio,Ith+30 =0.78; Pmax = 16.8mW T=90ºC; Ith=16.6mA; P

Ith+30

= 7.0mW, Pratio,Ith+30 =0.78; Pmax = 15.9mW T=95ºC; Ith=17.9mA; P

Ith+30

= 6.7mW, Pratio,Ith+30 =0.76; Pmax = 15.3mW

Key points:

• High optical power enable high

coupling loss

• Small threshold increasing up to 95 C

since high T0

• Small bias variation over T
• Small efficiency degradation over T

Constant eye quality with constant modulation current!

Centre of eye power Bias variation (0-85 °C)

Measured on chip on carrier Measured on chip on carrier

Slope eff. ratio= 80%

Avago Technologies Confidential Presentation title here Page 48

FOPD

Device results - dynamic (eye diagrams)

10 Gb eye diagrams, 35 mA modulation current swing constant over T (20-110 °C) 20 °C base chip temperature:

• 5 dB e.r. @ 35 mA bias C.O.E.
• GbE mask: 57% mask margin
• 85 °C base chip temperature:
• 5 dB e.r. @ 52 mA bias C.O.E.
• GbE mask: 31% mask margin
• 110 °C base chip temperature:
• 4.5 dB e.r. @ 60 mA bias C.O.E.
• GbE mask: 22% mask margin
• Eyes show no degradation up to –8 dB B.R.

(Fiber)

Measured probing directly the chip by 40 GHz 50 Measured probing directly the chip by 40 GHz 50 Ohm Ohm-

• series matched RF probe

series matched RF probe

Avago Technologies Confidential Presentation title here Page 49

FOPD

Modal dispersion in MM fibers Modal dispersion in MM fibers

back

Avago Technologies Confidential Presentation title here Page 50

FOPD

Technologies for LRM application: EDC (Electronic Dispersion Technologies for LRM application: EDC (Electronic Dispersion Compensation Compensation) )

• EDC uses adaptive electrical filtering

techniques to compensate for limitations incurred during fiber propagation:

• modal dispersion
• chromatic dispersion
• polarization modal dispersion
• EDC can be realized in an integrated

circuit.

• EDC can enhance the performance of

existing transceivers and enabling new applications.

EDC technology

10 Gbps to 300m over legacy multimode fiber

TX CDR/ LD FP/DFB LinTIA 220m MMF RX CDR

Electronic Dispersion Compensation algorithm

D

t1

D

t2

D

tn

LPF

CDR Signal

Feedback

Adaptive controller

t1 tn

EQ

Why?

Avago Technologies Confidential Presentation title here Page 51

FOPD

10Gb/s DFB Sonet for XFP LR

L L/2 L/2

Phase shifted grating

• Rev. mesa

Grating, /4 phase shift centered

stop etch InP:p spacer grating layer

InGaAlAs ridge structure

InP:n InP + InGaAs contact layer

InGaAlAs MQW

Avago Technologies Confidential Presentation title here Page 52

FOPD

250 um

Emitting facet

200 um Angled section toward

• utput facet

AR AR AR AR Bar number

Main specs

Target application: 10Gb/s multi rate XFP LR

• 80 ºC base chip max temperature
• Direct modulation at 10Gb/s
• >=7 dB ER @ 20-70 ºC, SONET OC192

DFB top view

1250 1260 1270 1280 1290 1300 1310 1320 1330 1340

• 70
• 60
• 50
• 40
• 30
• 20
• 10

W avelength (nm)

• Rel. Amplitude (dB)
• Opt. S p.: P ath: L AB\
• sa\

da071a_y1; Device: da071a_y101T 20w; I = 50.0 mA; 21-S ep-2006

O Peak: 1294.8 nm; SMSR: 50 dB

Avago Technologies Confidential Presentation title here Page 53

FOPD

• Ith <30mA and Pout> 8mW @ 80°C
• 7dB ER @20°C with 35mA* Iswing 18% mask

margin on OC192 SONET mask

• 7dB ER @80°C with 35mA* Iswing 8% mask

margin on OC192 SONET mask * XFP-module provides higher Ibias and up to 55mA Iswing Lab results

20C 80C

• 20

20 40 60 80 100 120 5 10 15 20 25 da071ay139: Optical P ower (T =20, 40, 60, 80, 85 °C) Current (mA); - 21-S ep-2006 Power (mW) T=20ºC; Ith= 9.9mA; PIth+30= 8.0mW; Pmax= 22.5mW T=40ºC; Ith=13.1mA; PIth+30= 7.1mW, Pratio,Ith+30=0.89; Pmax= 18.6mW T=60ºC; Ith=18.3mA; PIth+30= 5.8mW, Pratio,Ith+30=0.73; Pmax= 13.9mW T=80ºC; Ith=26.2mA; PIth+30= 4.3mW, Pratio,Ith+30=0.54; Pmax= 9.0mW T=85ºC; Ith=28.8mA; PIth+30= 4.0mW, Pratio,Ith+30=0.50; Pmax= 7.8mW

Avago Technologies Confidential Presentation title here Page 54

FOPD 70C 40C

• 5C

0.426 A 3.3V ICC 36.256 mA I2CTXBIAS 50.38 dB SMSR 1297.38 nm PEAKWL

• 3.05

dB m TXOPT 6.91 dB TXEXR 18 % TXMM

• 5C

0.445 A 3.3V ICC

• 3.55

dB m TXOPT 6.98 dB TXEXR 16 % TXMM 40C 0.488 A 3.3V ICC 64.61 mA I2CTXBIAS 48.22 dB SMSR 1304.36 nm PEAKWL

• 3.75

dB m TXOPT 6.96 dB TXEXR 19 % TXMM 38.6 mUI Jitter Gen Vpk-pk 4M- 80M 54.9 mUI Jitter Gen Vpk-pk 50K- 80M 70C

TTC-DFB, bandwidth and XFP module results

2 4 6 8 10 12 14 16 18 20

• 15
• 10
• 5

5 Frequency (GHz)

• Rel. Amplitude (dB)

Device: \ NET _AN\ da130__y1\ da130__y121T 20 : Mod. Bandwidth; 11-Jun-2007 Ith + 10 mA: (Ith = 11 mA); f-3dB= 12.90 GHz Ith + 30 mA: (Ith = 11 mA); f-3dB= 18.96 GHz Ith + 50 mA: (Ith = 11 mA); f-3dB= 20.00 GHz Ith + 70 mA: (Ith = 11 mA); f-3dB= 20.00 GHz Ith + 90 mA: (Ith = 11 mA); f-3dB= 20.00 GHz

Bw=19GHz @ Ibias=40mA T=20C

2 4 6 8 10 12 14 16 18 20

• 25
• 20
• 15
• 10
• 5

5 10 Frequency (GHz)

• Rel. Amplitude (dB)

Device: \ NET _AN\ da130__y1\ da130__y121T 80 : Mod. Bandwidth; 11-Jun-2007 Ith + 10 mA: (Ith = 27 mA); f-3dB= 9.12 GHz Ith + 30 mA: (Ith = 27 mA); f-3dB= 13.69 GHz Ith + 50 mA: (Ith = 27 mA); f-3dB= 15.28 GHz Ith + 70 mA: (Ith = 27 mA); f-3dB= 15.73 GHz

Bw=13.7GHz @ Ibias=57mA T=20C

Avago Technologies Confidential Presentation title here Page 55

FOPD

Pout Ia Ig Pout

DBR a 2 sezioni

Sezione attiva responsabile della emissione di fotoni Sezione di tuning sulla quale è presente un reticolo di Bragg

Tunable devices: Distributed Bragg Reflector DBR

2 4 6 8 1 0 1 2 14 16 1 8 20 1.5

• 1. 502
• 1. 504
• 1. 506
• 1. 508

1 .51

• 1. 512
• 1. 514
• 1. 516
• 1. 518

Simulazione e misura della lunghezza d’onda di emissione in funzione della corrente nel grating

2-sections DBR

Avago Technologies Confidential Presentation title here Page 56

FOPD

Device results: tuning maps

• 10

10 20 30 40 50 60 70 1.55 1.555 1.56 1.565 Wavelength [um] GRATING Current [mA]

• 10

10 20 30 40 50 60 70 20 40 60 SMSR [dB]

Emitted wavelength and SMSR versus grating current > 10 nm tuning > 40 dB SMSR @ I active > 40 mA

Avago Technologies Confidential Presentation title here Page 57

FOPD

Passive and tuning waveguides DBR and SOA active waveguide

Wide tunable laser: DBR Array

InP Monolithically integrated DBR Array + PIC

Bent waveguides MMI SOA 4 grating pitches (EBL) 10 nm spaced Bragg Wavelengths Bent

• utput

Output beam

• Medium

tuning DBR array

ECOC 2003 ECOC 2003

Avago Technologies Confidential Presentation title here Page 58

FOPD

Avago tunable laser: key features

Small (0.67 mm2 ,1670um x 400um) chip size 40 nm tuning range

• 4 x 10 nm tuning (each DBR)
• easy tuning control

+ 13 dBm output power ex facet

• at only 50 mA DBR active, various grating curr., 100 mA

SOA

Low (<250 mW) power consumption Blanking Blanking (>40dB) and VOA VOA (>10dB) features Bent SOA with “relaxed specs” Anti Reflection Coating (10-3)

By a monolithic InP based chip

• R. Paoletti et al, ECOC 2003
• R. Paoletti et al, ECOC 2003

Avago Technologies Confidential Presentation title here Page 59

FOPD

Device results: emitted spectrum

1.52 1.53 1.54 1.55 1.56 1.57 1.58 1.59 1.6

• 70
• 60
• 50
• 40
• 30
• 20
• 10

chip4-M35-2 @ 20°C: I

act=50mA

Wavelength - nm -

• Rel. Optical Power - dB -

41 nm tuning range

Avago Technologies Confidential Presentation title here Page 60

FOPD

FINE E…

grazie per l’attenzione!

Avago Technologies Confidential Presentation title here Page 61

FOPD

The end!

Books

• G. Guekos, Photonic Devices, Springer, 1999, ISBN 3-540-64318-4
• L. A. Coldren, S. W. Corzine, “Diode lasers and photonic integrated circuits”, John Wiley and sons, inc.,
• P. Vasil’ev, “Ultrafast diode laser”, Artec House Boston-London
• K. Petermann, “Laser Diode Modulation” and Noise, Dordrecht, The Netherlands: Kluwer Academic Publishers

Related published paper

• F. Delpiano, R. Paoletti, P. Audagnotto and R. Puleo, "High Frequency Modelling and Characterisation of High Performance DFB Laser Modules",

IEEE Transaction on Components, Hybrids, and Manufacturing Technology, Part B, Vol. 17, No 3, pp. 412-417, august 1994.

• R. Paoletti, D. Bertone, A. Bricconi, R. Fang, L. Greborio, G. Magnetti, M. Meliga, "Comparison of Optical and Electrical Modulation Bandwidths in

three different 1.55 m InGaAsP Buried Laser Structures", SPIE’S International Symposia - Photonics West ’96, pp. 296-305, 30 Jan. - 1 Febr. 1996, S. Josè, CA, USA.

• R. Paoletti, M. Meliga, I. Montrosset, “Optical Modulation Technique for Carrier Lifetime Measurement in Semiconductor Lasers”, IEEE Photonics

Technology Letters, Vol. 8, No. 11, pp. 1447-1449, November 1996.

• R. Paoletti, M. Meliga, G. Oliveti, M. Puleo, G. Rossi, L. Senepa, “10 Gbit/S Ultra-Low Chirp 1.55M Directly Modulated Hybrid Fiber Grating -

Semiconductor Laser Source”, 23rd European Conference on Optical Communication ECOC ’97, Mo 3B. 22-25 September 1997, Edimburgh (UK).

• R. Y. Fang, D. Bertone, M. Meliga, Montrosset*, S. Murgia, G. Morello, G. Magnetti, G. Oliveti, R. Paoletti, “A simple structure 1.55 m InGaAsP/InP

Spot Size Converted (SSC) laser”, IEEE Photonics Technology Letters, Vol. 10, No. 6, pp. 775-777, June 1998.

• G. Rossi, R. Paoletti, M. Meliga, “SPICE simulation for analysis and design of fast 1.55 m MQW laser diodes”, IEEE Journal of Lightwave

Technology, Vol. 16, No. 7, July 1998.

• R. Paoletti, M. Agresti, G. Burns, G. Berry, D. Bertone. P. Charles, P. Crump, A. Davies, R.Y. Fang, R. Ghin, P. Gotta, M. Holm, C. Kompocholis, G.

Magnetti, J. Massa, G. Meneghini, G. Rossi, P. Ryder, A. Taylor, P. Valenti and M. Meliga, "100 C, 10 Gb/s directly modulated InGaAsP DFB lasers for uncooled Ethernet applications", post-deadline at European Conference on Optical Communication ECOC ’2001, October 2001,Amstedam (NL).

• R. Paoletti, M. Meliga, "Uncooled, high speed DFB lasers for Gigabit Ethernet applications", invited paper at SPIE’S International Symposia -

Photonics West Optoelectronics 20021, 19 - 25 Jan. 2002, S. Josè, CA, USA.

• R. Paoletti, C. Coriasso, M. Agresti, P. Gotta, G. Magnetti, A. Moro, D. Sarocchi, D. Soderstrom, C. Cacciatore, L. Fratta, M. Vallone, A. Stano, E. Liotti,
• P. Valenti, G. Roggero, G. Fornuto, G. Burns, R.Harrell, P. Charles, D. Clark, G. Berry and M. Meliga, "Small chip size, low power consumption, fully

electronic controlled tunable laser source with 40 nm tuning range and 20 mW output power for WDM applications", ECOC 2003, 21 - 25 Sept. 2003, Rimini, Italy

• R. Paoletti, M. Agresti, D. Bertone, L. Bianco, C. Bruschi, A. Buccieri, R. Campi, C.Dorigoni, P. Gotta, M. Liotti, G. Magnetti, P. Montangero, G.

Morello, C. Rigo, E. Riva, D. Soderstrom, S. Stano, P. Valenti, M. Vallone, M. Meliga" Highly reliable and high yield 1300 nm InGaAlAs directly modulated ridge Fabry-Perot lasers, operating at 10 Gb/s, up to 110 ºC, with constant current swing ", Post deadline at Optical Fiber Conference OFC 2005, Anaheim (CA)