Silicon nitride based TriPleX Photonic Integrated Circuits for - - PowerPoint PPT Presentation

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Silicon nitride based TriPleX Photonic Integrated Circuits for - - PowerPoint PPT Presentation

Silicon nitride based TriPleX Photonic Integrated Circuits for sensing applications Arne Leinse a.leinse@lionix-int.com 2 11-Dec-18 Micronano Conference 2018 Our chips drive your business 2 What are Photonic ICs (PICs)? Photonic


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Silicon nitride based TriPleX Photonic Integrated Circuits for sensing applications

Arne Leinse a.leinse@lionix-int.com

11-Dec-18 Micronano Conference 2018

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What are Photonic ICs (PICs)?

11-Dec-18

  • Photonic Integrated Circuits (PICs) are devices
  • n which several optical components are

integrated;

  • PICs are usually fabricated using a wafer-scale

technology using substrates of silicon, silica or InP;

  • Most PICs use waveguides to allow the

realization of couplers, filters, power splitters, combiners and active elements with optical gain or attenuation;

  • A PIC by itself is not a product!
  • Interfacing with fibers or free-space
  • Interfacing with electronics
  • Thermal interfacing
  • Mechanical support

Micronano Conference 2018

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TriPleXTM: some geometries...

 Adjustable polarization properties

(sensors  telecom)

 Low optical attenuation  Small bend radii (small footprint!)  Design by geometry  Silicon and glass compatible  Spot size converters

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11-Dec-18 Micronano Conference 2018

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Optical Coherence Tomography (OCT)

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Dermal imaging

  • ptical biopsies

Forensics/biometrics fingerprint identification

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11-Dec-18 Micronano Conference 2018

Common path interferometer Arrayed Waveguide Grating based spectrometer

850 nm 900 nm 800 nm

Optical power (a.u.)

CCD First stage AWG Second stage AWG In- and output

Optical Coherence Tomography (OCT)

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11-Dec-18 Micronano Conference 2018 200 400 600 800 0.0 0.5 1.0

OCT signal (a.u.) depth(m)

system response mirror distance (m): 30 50 100 150 200 250 300 350 400

Optical Coherence Tomography (OCT)

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Evanescent field sensing

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Evanescent field sensing

11-Dec-18 Micronano Conference 2018

Signal amplitude 1/Wavelenght Signal amplitude 1/Wavelenght

SHIFT SHIFT FSR FSR

Shift of resonance peak of phase shift induced by change in refractive index or adsorbed layer thickness MRR aMZI

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Evanescent field sensing

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Evanescent field sensing

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Prototype sensor chip with MRRs and aMZIs in one chip Response of sensors to different sucrose concentrations

5000 10000 15000 20000 25000 100 200 300 400 500 600 700

Shift (picometer) Time (s)

MRRs aMZIs

Binding of thrombin onto aptamer modified sensor in demi

500 1000 1500 2000 2500 3000 3500 4000 4500 300 600 900 1200 1500

Shift (picometer) Time (s)

Thrombin PBS aMZI MRR

 Difference in signal yield: aMZI/MRR ≈ 10.5  aMZI sensitivity can be tuned by design

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Narrow linewidth laser - Gas Sensing

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 Accurate wavelength control enables accurate readout of absorption spectra of gasses.  In adddition to 1550 range other wavelength ranges possible by using different gain

sections

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Narrow linewidth laser

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 Double ring reflector, attached to Gain

Heating 1 ring Causes spectrum to hop across wavelengths

Input and reflected light Laser

  • utput
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Narrow linewidth laser

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Narrow linewidth laser - Gas Sensing

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Photodiode Sensor Tunable Laser

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PIC access

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Application specific design area Laser

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https://photonics.lionix-international.com/mpw-service/

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Special academic discount

16th run 17th run 18th run Tape out 28 Feb 2019 31 July 2019 30 Nov 2019 Devices ready 30 June 2019 20 Dec 2019 30 Apr 2020

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Micronano Conference 2018

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Q&A

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