Nanowire FET Nanowire FET Nanowire FET Biomolecular Biomolecular - PowerPoint PPT Presentation

Nanowire FET Nanowire FET Nanowire FET Biomolecular Biomolecular Biomolecular Sensors Sensors Sensors Mark Reed Mark Reed Mark Reed Yale University Yale University Yale University Departments of Applied Physics and Electrical Engineering Departments of Applied Physics and Electrical Engineering Departments of Applied Physics and Electrical Engineering Yale Institute for Nanoscience and Quantum Engineering Yale Institute for Nanoscience and Quantum Engineering Yale Institute for Nanoscience and Quantum Engineering with: Eric Stern, David Routenberg, with: Eric Stern, David Routenberg, Erin Steenblock, Alek Vacic, Nitin Rajan, Erin Steenblock, Alek Vacic, Nitin Rajan, Prof. Tarek Fahmy Prof. Tarek Fahmy Thanks to: Jin Chen, James Klemic, Daniel Thanks to: Jin Chen, James Klemic, Daniel Turner-Evans, Pauline Wyrembak , Cathy Jan Turner-Evans, Pauline Wyrembak , Cathy Jan Labs of Profs. Ronald Breaker, Labs of Profs. Ronald Breaker, Andrew Hamilton, Tarek Fahmy Andrew Hamilton, Tarek Fahmy 1 NanoForum09 Las Vegas, NV April 29, 2009 M. Reed (Yale) NanoForum09 Las Vegas, NV A pril 29, 2009 M. Reed (Yale) 1

What I won’t talk about today What I won’t talk about today plasmonics plasmonics nanowire materials nanowire materials & devices & devices mesoscopics mesoscopics DNA DNA sequencing sequencing devices devices molecular molecular physics of physics of electronic electronic scaled scaled transport, transport, devices devices IETS IETS 2 NanoForum09 Las Vegas, NV April 29, 2009 M. Reed (Yale) NanoForum09 Las Vegas, NV A pril 29, 2009 M. Reed (Yale) 2

Current Macromolecular Sensing Current Macromolecular Sensing Labeled sensing Labeled sensing DNA sequencing, radiotag DNA array, fluor ELISA: Indirect fluor DNA sequencing, radiotag DNA array, fluor ELISA: Indirect fluor Unlabeled sensing Unlabeled sensing Surface plasmon resonance Suspended cantilever Electrical : ISFET Surface plasmon resonance Suspended cantilever Electrical : ISFET 3 NanoForum09 Las Vegas, NV April 29, 2009 M. Reed (Yale) NanoForum09 Las Vegas, NV A pril 29, 2009 M. Reed (Yale) 3

Nanowire biosensors Nanowire biosensors PSA (C. Zhou, USC) PSA PSA PSA (unlabeled detection) (unlabeled detection) antibody Linker Au/Ti ISFETs ISFETs NW/SWNT SiO 2 Si detection limits detection limits typically ~ µ µM M typically ~ In 2 O 3 NW 390 I (nA) 385 1 dI 1 ~ BSA Buffer PSA 380 I dQ r 0 100 200 300 400 500 Time (s) 10nm diameter GaN NW 4 NanoForum09 Las Vegas, NV April 29, 2009 M. Reed (Yale) NanoForum09 Las Vegas, NV A pril 29, 2009 M. Reed (Yale) 4

Silicon-on-insulator (SOI) CMOS Nanowires Silicon-on-insulator (SOI) CMOS Nanowires Nature 445, 445, 519 (2007) 519 (2007) Nature V G =-40V -3 � 300K, dry 25nm SOI I SD (A) -2 � -1 � 0 0 -5 -10 -15 V SD (V) V G =0V 5 NanoForum09 Las Vegas, NV April 29, 2009 M. Reed (Yale) NanoForum09 Las Vegas, NV A pril 29, 2009 M. Reed (Yale) 5

p-type accumulation mode (backgate) p-type accumulation mode (backgate) 100n V SD =-1V V G =-40V  ∆ V G  =1V 1n 300K, dry -3 � |I SD (A)| w=50nm, t=25nm 10p 100f I SD (A) -2 � 1f 0 -10 -20 -30 -40 V GD (V) -1 � 400 Hall 0 0V Drift 2 /Vs) 0 -5 -10 -15 V SD (V) Mobility (cm Fully depleted; n 0 ~ 1x10 15 cm -3 100 w = 300 nm t = 25 nm µ max µ µ µ = 54 cm max = 139 cm = 139 cm 2 2 /V /V- -s s = 54 cm 2 2 /V /V- -s s 40 30 100 Temperature (K) 6 NanoForum09 Las Vegas, NV April 29, 2009 M. Reed (Yale) NanoForum09 Las Vegas, NV A pril 29, 2009 M. Reed (Yale) 6

1/ f noise of nanowires 1/ f noise of nanowires SnO 2 InAs Si SOI NW S α ITRS α H = 1.3 x 10 -4 I = H 2 I f N 7 NanoForum09 Las Vegas, NV April 29, 2009 M. Reed (Yale) NanoForum09 Las Vegas, NV A pril 29, 2009 M. Reed (Yale) 7

NW Sensitivity Scaling with Size : pH Sensing NW Sensitivity Scaling with Size : pH Sensing 1 � 1 � NB device RIE device 40 8.0 8.0 8.0 8.0 Sensitivity 7.5 7.5 7.5 7.5 |I SD (A)| |I SD (A)| 100n 100n 20 ∆ α I 2 N 7.0 7.0 7.0 7.0 = ⋅ SD s I R n SD , 0 0 V SD 6.5 6.5 6.5 6.5 0 0 5 10 15 20 25 large large -1 ) Inverse Radius ( µ m small small 10n 10n 6.0 6.0 0 0 100 100 200 200 300 300 400 400 500 500 600 600 Time (s) Time (s) = Nernst potential 60 mV pH = Subthresho ld slope 60 mV decade large: w w = 1000 nm; = 1000 nm; t t = 80 nm = 80 nm large: ∴ max. response is 1 decade pH small: w w = 100 nm; = 100 nm; t t = 25 nm = 25 nm small: 8 NanoForum09 Las Vegas, NV April 29, 2009 M. Reed (Yale) NanoForum09 Las Vegas, NV A pril 29, 2009 M. Reed (Yale) 8

Fluid Considerations Fluid Considerations Nano Lett 5 5 , 803 (2005) , 803 (2005) Nano Lett 1E12 1E12 1E10 1E10 1E8 1E8 # Molecules/Min # Molecules/Min Silicon-specific Silicon-specific 1000000 1000000 functionalization functionalization x x x x 10000 10000 100 100 0 2 d C = − + J D 0 u C 1 1 z z 0 2 dz x x x x 0.01 0.01 Nonspecific Nonspecific 1E-4 1E-4 functionalization functionalization 1E-6 1E-6 -15 -15 -14 -14 -13 -13 -12 -12 -11 -11 -10 -10 -9 -9 10 10 10 10 10 10 10 10 10 10 10 10 10 10 C 0 (M) C 0 (M) x = microfluidics = microfluidics x Science 293, 293, 1289 1289 (2001) (2001) Science x = mixer (resorvoir) = mixer (resorvoir) x Nature 445, 445, 519 (2007) 519 (2007) Nature 9 NanoForum09 Las Vegas, NV April 29, 2009 M. Reed (Yale) NanoForum09 Las Vegas, NV A pril 29, 2009 M. Reed (Yale) 9

Biotin-Avidin & Biotin-Avidin & Streptavidin Sensing Streptavidin Sensing receptor receptor (biotin) (biotin) 300n analyte analyte Streptavidin Quenched S-Av p p- -type accumulation mode, type accumulation mode, n n PEGylated 200n Avidin biotinylated NW device biotinylated NW device |I SD (A)| avidin avidin n n positive charge positive charge u u 100n ⇒ current decrease ⇒ current decrease u u streptavidin streptavidin n n negative charge negative charge u u 0 ⇒ current increase ⇒ current increase -20 0 20 40 u u 1 nM protein in Time (sec) poly(ethylene glycol) poly(ethylene glycol) n n 0.1X PBS ( λ D ~ 2.2 nm) (PEG)- -ylated device, ylated device, (PEG) quenched avidin controls quenched avidin controls Nature , , 445 445 , 519 (2007) , 519 (2007) Nature 10 NanoForum09 Las Vegas, NV April 29, 2009 M. Reed (Yale) NanoForum09 Las Vegas, NV A pril 29, 2009 M. Reed (Yale) 10

Sensitivity: Concentration Dependence Sensitivity: Concentration Dependence 2.2 n initial S/N initial S/N n 2.0 ~ 140 (@10fM) ~ 140 (@10fM) 1.8 Normalized |I SD (A)| 1.6 ⇒ <100 aM limit ⇒ <100 aM limit 1.4 (< 3 fg/ml) (< 3 fg/ml) 1 nM 1.2 10 pM 1.0 100 fM (1 aM = 30 1 aM = 30 ( 0.8 10 fM molecule per mm 3 3 ) ) molecule per mm 0.6 -20 0 20 40 60 80 Time (sec) DC, ambient 11 NanoForum09 Las Vegas, NV April 29, 2009 M. Reed (Yale) NanoForum09 Las Vegas, NV A pril 29, 2009 M. Reed (Yale) 11

• Capture1 is the Capture1 is the • DNA sensing: DNA sensing: complementary strand of Probe1; complementary strand of Probe1; • Capture2 is the Capture2 is the • criss-cross criss-cross complementary strand of Probe2 complementary strand of Probe2 S D S D 3.5 � 3.2 � 3.0 � 3.0 � |I SD (A)| |I SD (A)| 2.8 � 1.0 � 2.2 � Probe 1 Probe 1 Probe 2 Probe 2 2.0 � 500.0n -50 0 50 100 150 200 -50 0 50 100 150 200 Time (sec) Time (sec) Surface: Capture1 Surface: Capture2 Surface: Capture1 Surface: Capture2 S D 12 NanoForum09 Las Vegas, NV April 29, 2009 M. Reed (Yale) NanoForum09 Las Vegas, NV A pril 29, 2009 M. Reed (Yale) 12