Nano-Science Activity at Atomic-scale Surface Science Research - PDF document

Nano-Science Activity at Atomic-scale Surface Science Research Center (ASSRC) in Yonsei University Presented by H. W. Yeom 2003. 10. 14 Overview of ASSRC • Director : Prof. C. N. Whang • Established in 1995 • Funding - Korean Science and Engineering Foundation (through SRC program) and Yonsei University • Annul budget - 12 billion won • Research groups - 15 groups from 8 institutes • In-house man power - 5 professors, 4 Research professors, 8 Post docs ASSRC & I PAP, Y on se i U n iv. 1

Major Research Areas • Atomic structures of atomic (nano) -scale structures on surfaces • Electronic structures of atomic (nano) -scale structures on surfaces • Fabrication and manipulation of nanoscale structures on surfaces • Fabrication of nanodevices and transport properties Nano-lettering by scanning tunneling probe on SiO 2 thin film ASSRC & I PAP, Y on se i U n iv. Major Instruments • Synchrotron-radiation photoelectron spectroscopy beam line • Scanning Tunnelling Microscope • Atomic Force Microscope • Scanning Electron Microscope • Ion-Scattering Spectrometer • Photoemission Electron Microscope Synchrotron-radiation photoelectron spectroscopy system 4 K Scanning Tunneling Microscope ASSRC & I PAP, Y on se i U n iv. 2

Recent Publications (2001~2003) 2001 2002 2003 (1/2) Number of papers 40 57 28 3 0 2 5 2 0 2 0 0 1 1 5 2 0 0 2 2 0 0 3 1 0 5 0 P R L A P L P R B J A P O t h e r s ASSRC & I PAP, Y on se i U n iv. Si atomic chain on Si(111)5X2-Au : Shottkey barrier effect z x L = # of BP Units × 4a 0 ASSRC & I PAP, Y on se i U n iv. 3

Metallic nanowires on Si S T M i m a g e s o f A u n a n o l i n e s M e t a l - i n s u l a t o r t r a n s i t i o n o f n a n o l i n e s Himpsel’s group, PRL (2002) Yeom’s group, PRL (2003) ASSRC & I PAP, Y on se i U n iv. Growth of epitaxial Al 2 O 3 on oxidized or clean Si(111) Al 2 O 3 /clean-Si(111) γ -Al 2 O 3 (111) Ts=750 ° C Ts=830 ° C Al 2 O 3 /oxidized-Si(111) [ 1 1 1 ] Si (111) 2nm [ 1 1 2 ] ⊙ [ ] 1 1 0 Ts=750 ° C Ts=830 ° C Better crystallinity to grow on the oxidized Si(111). ASSRC & I PAP, Y on se i U n iv. 4

Electric transport through DNA - SEM image of trapped DNA Before trapping After trapping ASSRC & I PAP, Y on se i U n iv. 5