Nano-Science Activity at Atomic-scale Surface Science Research - - PDF document

nano science activity at atomic scale surface science
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Nano-Science Activity at Atomic-scale Surface Science Research - - PDF document

Nano-Science Activity at Atomic-scale Surface Science Research Center (ASSRC) in Yonsei University Presented by H. W. Yeom 2003. 10. 14 Overview of ASSRC Director : Prof. C. N. Whang Established in 1995 Funding - Korean Science and


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Nano-Science Activity at Atomic-scale Surface Science Research Center (ASSRC) in Yonsei University

Presented by H. W. Yeom

  • 2003. 10. 14

Overview of ASSRC

  • Director : Prof. C. N. Whang
  • Established in 1995
  • Funding - Korean Science and Engineering Foundation

(through SRC program) and Yonsei University

  • Annul budget - 12 billion won
  • Research groups - 15 groups from 8 institutes
  • In-house man power - 5 professors, 4 Research professors,

8 Post docs

ASSRC & I PAP, Y on se i U n iv.

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  • Atomic structures of atomic

(nano) -scale structures on surfaces

  • Electronic structures of atomic

(nano) -scale structures on surfaces

  • Fabrication and manipulation of

nanoscale structures on surfaces

  • Fabrication of nanodevices and

transport properties

Nano-lettering by scanning tunneling probe on SiO2 thin film

Major Research Areas

ASSRC & I PAP, Y on se i U n iv.

  • Synchrotron-radiation photoelectron spectroscopy beam line
  • Scanning Tunnelling Microscope
  • Atomic Force Microscope
  • Scanning Electron Microscope
  • Ion-Scattering Spectrometer
  • Photoemission Electron Microscope

4 K Scanning Tunneling Microscope Synchrotron-radiation photoelectron spectroscopy system

Major Instruments

ASSRC & I PAP, Y on se i U n iv.

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5 1 1 5 2 2 5 3 P R L A P L P R B J A P O t h e r s 2 1 2 2 2 3

Recent Publications (2001~2003)

28 57 40 Number of papers 2003 (1/2) 2002 2001

ASSRC & I PAP, Y on se i U n iv.

L = # of BP Units × 4a 0

x

z Si atomic chain on Si(111)5X2-Au : Shottkey barrier effect

ASSRC & I PAP, Y on se i U n iv.

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S T M i m a g e s

  • f

A u n a n

  • l

i n e s

M e t a l

  • i

n s u l a t

  • r

t r a n s i t i

  • n
  • f

n a n

  • l

i n e s Himpsel’s group, PRL (2002) Yeom’s group, PRL (2003)

Metallic nanowires on Si

ASSRC & I PAP, Y on se i U n iv.

γ-Al2O3 (111) Si (111) 2nm

[ 1 1 2 ] [ 1 1 ]

[ 1 1 1 ]

Al2O3 /oxidized-Si(111) Al2O3 /clean-Si(111) Ts=750°C Ts=830°C Ts=830°C Ts=750°C

Better crystallinity to grow on the oxidized Si(111).

Growth of epitaxial Al2O3 on oxidized or clean Si(111)

ASSRC & I PAP, Y on se i U n iv.

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Before trapping After trapping Electric transport through DNA - SEM image of trapped DNA

ASSRC & I PAP, Y on se i U n iv.