VICTORY PROCESS Full Physical 3D Semiconductor Simulator VICTORY - PowerPoint PPT Presentation

VICTORY PROCESS Full Physical 3D Semiconductor Simulator

VICTORY Process – 3D Process Simulator  VICTORY Process provides the capability to simulate comprehensive full process flows  Etching, Deposition, Lithography  Oxidation, Stress  Implantation  Diffusion  Self explanatory process flow description  Based on ATHENA syntax  Open interface for modeling  Model parameters and functions can be accessed and modified  Open C-code is used to implement the model functions  Pre-compiled library is provided  Makefile to create an extend model library is provided - 2 - Full Physical 3D Semiconductor Simulator

VICTORY Process – Numerics  Level set based framework  for structure representation and  for interface propagation  Very stable surface propagation algorithms  Important for Etching, Deposition, Oxidation  Based on the multi-layer structure concept  Automatic void detection  Avoids the problem of loop creation and correction - 3 - Full Physical 3D Semiconductor Simulator

VICTORY Process – Meshes  VICTORY Process uses two types of meshes  Hierarchical Cartesian mesh for implicit geometry representation  Irregular Cartesian mesh for volume data representation  Doping, Stress, .....  Manual and automatic mesh refinement  Manual refinement of the geometry mesh  Automatic refinement of the geometry mesh  Automatic set-up of volume data mesh  Manual refinement of the volume data mesh - 4 - Full Physical 3D Semiconductor Simulator

VICTORY Process – Etching/Deposition/Lithography  Comprehensive mask support  GDSII – format masks  lay – format masks (MaskViews)  Definition of mask polygons inside the processing deck  Mask variations via the deck (shrink and expand)  Selection of a simulation window  Lithography  Calculation of aerial images  Pattern transfer of aerial images - 5 - Full Physical 3D Semiconductor Simulator

VICTORY Process – Etching/Deposition/Lithography (con’t)  Geometrical Etching  Idealized directional mask pattern or image transfer  Pattern transfer with tilted sidewalls and rounded corners  Idealized isotropic, dry and directional etching  Selective and non-selective mode  Fast structure prototyping - 6 - Full Physical 3D Semiconductor Simulator

VICTORY Process – Etching/Deposition/Lithography (con’t)  Geometrical Deposition  Idealized vertical resists or material regions defined by a mask  Idealized conformal deposition  Deposition of features with tilted sidewalls and rounded corners  Planarisation mode to partially fill holes - 7 - Full Physical 3D Semiconductor Simulator

VICTORY Process – Etching/Deposition/Lithography (con’t)  Geometrical CMP  Idealized planarization  Selective and non-selective mode Non-Selective Selective - 8 - Full Physical 3D Semiconductor Simulator

VICTORY Process – Etching/Deposition/Lithography (con’t)  Physical Etching  Selective etching of several materials  Comprehensive set of default models  Selective Etching  Isotropic, Anisotropic, Directional  Crystal orientation dependent  Plasma Etching  Ion-Milling  Material dependent yield functions  Re-deposition (material dependent efficiencies)  Rotating beams, static beams, divergent beams  Reactive Ion Etching  Deep Reactive Ion Etching  Ballistic transport of reactants  High performance due to multi-threading  Near linear speedup on multi-core machines - 9 - Full Physical 3D Semiconductor Simulator

VICTORY Process – Etching/Deposition/Lithography (con’t) Ion milling with re-deposition - 10 - Full Physical 3D Semiconductor Simulator

VICTORY Process – Etching/Deposition/Lithography (con’t)  Physical Deposition  Comprehensive set of default models  Conformal Deposition  Non-conformal Deposition  Directional Deposition  Selective Deposition  Empirical epitaxial growth  Ion beam deposition  User accessible yield functions  Rotating beams, static beams and divergent beams  Sputter deposition  Ion assisted sputter deposition  Ballistic transport of reactants  High performance due to multi-threading  Near linear speedup on multi-core machines - 11 - Full Physical 3D Semiconductor Simulator

VICTORY Process – Etching/Deposition/Lithography (con’t) Ion beam deposition with tilted beam - 12 - Full Physical 3D Semiconductor Simulator

VICTORY Process – Etching/Deposition/Lithography (con’t)  Physical Etching and Deposition - Open modeling system  Open C-function model library  User definable transport characteristics ( flux model )  Define particles involved in the process  Determines how the reactants approach the wafer surface  Determines how the reactants are re-emitted from the surface  User definable surface reaction ( surface reaction model )  Determines how the local etch rate is calculated  User definable etching / deposition models ( topography model )  Defines the link between particle transport and surface reaction  C-function models for material characteristics  Etch rates, conformity, anisotropy, sticking efficiency  Technological models (e.g etch rate versus gas flow) - 13 - Full Physical 3D Semiconductor Simulator

Modes for Flux Calculation Primary-Ballistic Mode:  Only particles approaching the surface directly from the reactor chamber (primary particles) are taken into account  The velocity distribution function of the primary particles in the vicinity of the wafer is a modeling function definable by the user - 14 - Full Physical 3D Semiconductor Simulator

Modes for Flux Calculation (con’t) Reflective-Ballistic Mode:  Along with primary sources (reactor chamber) also secondary sources (particles reflected or emitted from surface) are taken into account.  The velocity distribution function of the primary and secondary particles are modeling functions definable by the user - 15 - Full Physical 3D Semiconductor Simulator

Modes for Flux Calculation (con’t) Rate-Coupled-Reflective-Ballistic Mode:  Along with primary sources (reactor chamber) also secondary sources (particles reflected or emitted from surface) are taken into account.  The velocity distribution function of the primary and secondary particles are modeling functions definable by the user  The amount of secondary particles is a function of the rate (e.g redeposition) - 16 - Full Physical 3D Semiconductor Simulator

VICTORY Process – Ion Implantation – Analytical  Analytical and Monte-Carlo methods for ion implantation  Analytical method uses a well established database for a wide range of implantation conditions  Gaussian profiles, Pearson profiles and Dual Pearson profiles  User definable profiles  By means of moments of the profile  By means of data files  Range scaling techniques are applied to take into account multi- material layers  High performance due to  Very efficient numerical algorithms  Efficient multi-threading - 17 - Full Physical 3D Semiconductor Simulator

VICTORY Process – Ion Implantation – Monte-Carlo  Monte Carlo method is more appropriate  For complex geometries  For large tilted implants because many effects cannot be accounted for by even the most elaborated analytical procedure  Monte Carlo method takes into account all important implantation effects:  Ion channelling  Ion dose dependency due to damage accumulation  Effect of multiple layers of different materials  Partial shadowing of ion flux for tilted implants  Multiple ion reflections within structures with complex 3D geometry  Lateral ion scattering from mask walls or so-called implantation proximity effect - 18 - Full Physical 3D Semiconductor Simulator

VICTORY Process – Ion Implantation – Monte-Carlo (con‘t)  Is completely physically based  Uses best available electronic and nuclear stopping models  Acceleration techniques  Trajectory splitting  High performance due to efficient multi-threading - 19 - Full Physical 3D Semiconductor Simulator

VICTORY Process – Ion Implantation – Monte-Carlo (con‘t) Implant at tilt 50 degrees and twist along structure’s diagonal.  5 million trajectories can be simulated in a few minutes on an 8 core machine - 20 - Full Physical 3D Semiconductor Simulator

VICTORY Process – Ion Implantation – Monte-Carlo (con‘t) Ion distribution in silicon Primary, i.e. direct impact implantation Shadowed, i.e. secondary impact implantation Implant at tilt 50 degrees and twist along structure’s diagonal.  All geometrical effects are taken into account - 21 - Full Physical 3D Semiconductor Simulator

VICTORY Process – Annealing/Diffusion  Based on an Open Modeling System  PDE system is extendable by the user  Modelling species can be added  Reactions between species can be extended and modified  Comprehensive set of default models  Direct, Fermi, FullCPL, Single-Pair, Five-stream  Dopant activation and solid solubility  Impurity segregation at material interfaces  Point defect trapping  Point defect clustering  Concurrent simulation of several impurities - 22 - Full Physical 3D Semiconductor Simulator