STUDY OF 2-D HEMT DEVICE Tec e & T Science & Under the - - PowerPoint PPT Presentation

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STUDY OF 2-D HEMT DEVICE Tec e & T Science & Under the - - PowerPoint PPT Presentation

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B TECH PROJECT PRESENTATION 2010 logy hnolog echno STUDY OF 2-D HEMT DEVICE Tec e & T Science & Under the guidance of of Scienc Dr. AJIT KUMAR PANDA DEPT. OF ELECTRONICS &COMMUNICATION ENGG. NIST ,PALUR HILLS BERHAMPUR. ute

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National tional Ins Instit titute ute of

  • f Scienc

Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

STUDY OF 2-D HEMT DEVICE

Under the guidance of

  • Dr. AJIT KUMAR PANDA
  • DEPT. OF ELECTRONICS &COMMUNICATION ENGG.

NIST ,PALUR HILLS BERHAMPUR. Presented By NAVNIDHI UPADHYAY ROLL NO:200620344 BISHWAJEET ROLL NO:200626368

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National tional Ins Instit titute ute of

  • f Scienc

Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

  • A HEMT is a field effect transistor

incorporating a junction between two materials with different band gaps (i.e., a Hetrojunction) as the channel instead of a doped region, as is generally the case for MOSFETs. Due to which we are able to achieve high electron mobility.

WHAT IS A HEMT DEVICE?

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National tional Ins Instit titute ute of

  • f Scienc

Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

  • Find the different scattering principles

which are there in HEMT device.

  • Mathematical Modelling of different

scattering phenomenon and 2- DEG.

  • Write a FORTRAN program to find the

solution of the above mathematical model using schrondinger wave equation.

  • Verify our program output with SYNOPSIS

tool.

PROJECT DESCRIPTION

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National tional Ins Instit titute ute of

  • f Scienc

Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

HEMT STRUCTURE

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National tional Ins Instit titute ute of

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B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

2-DEG FORMATION

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National tional Ins Instit titute ute of

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Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

Additional Construction details

 GaN(hetero structure) on as Si(subsrtrate) were fabricated with field plates of various dimensions for optimum performance .  Proper AI mole fraction in the AlGaN layer which optimize device performance. Meshing of all grids of different regions to form the heterojunction structure

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National tional Ins Instit titute ute of

  • f Scienc

Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

Meshing of different layerification

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National tional Ins Instit titute ute of

  • f Scienc

Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

Benefits of such structural design

  • Enhancement in radio frequency (RF)

current–voltage swings was achieved with acceptable compromise in gain, through both reduction in the trapping effect and increase in break down voltages.

  • superior performances at simultaneous high

frequency, power density, and high thermal stability.

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National tional Ins Instit titute ute of

  • f Scienc

Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

  • It can be used in microwave and millimeter

wave communication, imaging, radar, and radio astronomy or any application where high gain and low noise at high frequencies are required. It can be used as single transistors or in the form of an IC called MMIC ('monolithic microwave integrated circuit‘). HEMT devices are found in many types of equipment ranging from cellphones to electronic warfare systems such as radar.

SCOPE OF HEMT

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National tional Ins Instit titute ute of

  • f Scienc

Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

Added advantage of such structural design

The GaN based HEMT is modeled by taking various substrates such as GaN itself, Sapphire and SiC etc. when GaN type material is grown over Silicon means wideband gap material grown over narrow band gap material as a result, a 2DEG is formed at the Si/GaN interface, due to the conduction band discontinuity.

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National tional Ins Instit titute ute of

  • f Scienc

Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

We saw that the characteristics of hemt device and its application in modern technology as it consumes less power and also noise immunant . Scattering phenomenon is observed theorotically . Our aim is to have a mathematical model for above via schrodinger wave equation and matching result with that of synopsis tool. CONCLUSION

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National tional Ins Instit titute ute of

  • f Scienc

Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

GaN based HEMT 2 DEG in AlxGa1-xN/GaN based heterostructures, suitable for high electron mobility transistors, are induced by strong polarization effects. AlGaN/GaN interface are sensitive to a large number of different physical properties such as polarity, alloy composition, strain, thickness, and doping of the AlGaN barrier.

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National tional Ins Instit titute ute of

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Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

GaN based HEMT(contd…)

Formation of two dimensional electron gases in undoped and doped AlGaN/GaN structures rely both on piezoelectric and spontaneous polarization induced effects. To further improve the potential use of the traditional device, a new gate recessed structure is proposed in this paper by introducing a thin layer of InxGa1-xN layer to the existing AlxGa1-xN/GaN device.

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National tional Ins Instit titute ute of

  • f Scienc

Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

GaN based HEMT(contd…)

  • The 3.4 eV band gap in GaN allows 7.5 times

as much electric field as for GaAs before avalanche breakdown occurs.

  • The

piezoelectric and spontaneous polarization effects result in a high density of 2- DEG at the AlxGa1-xN/GaN hetero-interface. Therefore, AlxGa1-xN/GaN can maintain much higher current densities.

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National tional Ins Instit titute ute of

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Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

GaN based HEMT(contd…) AlGaN/GaN HEMTs have emerged as attractive candidates for high voltage, high power operation at microwave frequencies. GaN has a larger peak electron velocity, larger saturation velocity, higher breakdown voltage, and thermal stability.

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National tional Ins Instit titute ute of

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B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

STRUCTURAL DOMAIN VIEW

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National tional Ins Instit titute ute of

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B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

Layers of MODFET(AlGaN/GaN/Si) Here silicon is added as substrate so we have a two 2 DEG structure.

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National tional Ins Instit titute ute of

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Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

DESIGN using SYNOPSYS TCAD For our simulation we have used the following tools of Synopsys TCAD-

  • Sentaurus structure Editor
  • Sentaurus Device
  • Tecplot_SV
  • Inspect
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National tional Ins Instit titute ute of

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Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

DESIGN using SYNOPSYS TCAD(Contd..)

Sentaurus Structure Editor- Can be used as a 2D or 3D structure editor. Structures are generated or edited interactively using the graphical user interface.  Features an interface to configure and call the Synopsys meshing engines. It generates the necessary input files for the meshing engines, which generate the grid and data files for the device structure.

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National tional Ins Instit titute ute of

  • f Scienc

Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

DESIGN using SYNOPSYS TCAD(Contd..)

Creating a structure- the structure of the device is designed using the graphical user interface. include selecting proper material, selecting exact coordinate, creating rectangle region, defining contacts, adding vertices, renaming region, saving the model etc.

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National tional Ins Instit titute ute of

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Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

DESIGN using SYNOPSYS TCAD(Contd..)

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National tional Ins Instit titute ute of

  • f Scienc

Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

DESIGN using SYNOPSYS TCAD(Contd..)

Mesh Operation-

  • users can define doping profiles and refinement

parameters in different parts of the structure.

  • The placement of specified by user-defined

refinement/evaluatthese profiles and refinements are restricted can be ion (Ref/Eval) windows.

  • Sentaurus Structure Editor allows the full

flexibility of definitions and placements available in the Mesh input syntax.

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National tional Ins Instit titute ute of

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Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

DESIGN using SYNOPSYS TCAD(Contd..)

Fig:MODFET after defining the refinement window

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National tional Ins Instit titute ute of

  • f Scienc

Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

DESIGN using SYNOPSYS TCAD(Contd..) Sentaurus Device:

simulates numerically the electrical behavior

  • f a single semiconductor device in isolation or

several physical devices combined in a circuit. Real device is represented in the simulator as a ‘virtual’ device whose physical properties are discretized onto a non-uniform ‘grid’ (or ‘mesh’) of nodes.

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National tional Ins Instit titute ute of

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Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

Structure Designed

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National tional Ins Instit titute ute of

  • f Scienc

Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

DESIGN using SYNOPSYS TCAD(Contd..)

Tecplot SV Tecplot SV is an advanced visualization tool for viewing 2D and 3D devices. In addition, it can extract slices of data along the coordinate axes or user-defined lines of a 2D device, obtain 2D cross sections of 3D devices, and perform mathematical operations on the extracted data.

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National tional Ins Instit titute ute of

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Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

DESIGN using SYNOPSYS TCAD(Contd..)

Fig: - DEG formation in HEMT device

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National tional Ins Instit titute ute of

  • f Scienc

Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

DESIGN using SYNOPSYS TCAD(Contd..)

  • Inspect-
  • Tool is used to display and analyze curves.
  • Features a convenient graphical user interface,

a script language, and an interactive language for computations with curves.

  • With Inspect, datasets can be combined and

mapped to the x-axis and y-axis to create and display a curve.

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National tional Ins Instit titute ute of

  • f Scienc

Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

DESIGN using SYNOPSYS TCAD(Contd..)

Fig : - Id vs Vds curve

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National tional Ins Instit titute ute of

  • f Scienc

Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

RESULTS AND DISCUSSION DC Simulation Result

Fig : - Drain Current (Id) Vs Gate Voltage (Vg) characteristics

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National tional Ins Instit titute ute of

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Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

RESULTS AND DISCUSSION (contd…)

Fig: Drain Current (Id) Vs Drain Voltage (Vd) characteristics

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National tional Ins Instit titute ute of

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Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

RESULTS AND DISCUSSION (contd…)

Fig:Conduction Band energy in different layers of MODFET

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National tional Ins Instit titute ute of

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Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

RESULTS AND DISCUSSION (contd…)

Fig: Band gap in different layers of MODFET

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National tional Ins Instit titute ute of

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Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

RESULTS AND DISCUSSION (contd…)

Fig:current density in different layers of MODFET

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National tional Ins Instit titute ute of

  • f Scienc

Science & e & T Tec echno hnolog logy

B TECH PROJECT PRESENTATION 2010

Navnidhi Upadhyay & Bishwajeet

RESULTS AND DISCUSSION (contd…)

Fig:Electrostatic potential in different layers of MODFET