SLIDE 1
Black Phosphorus
2
- Synthesis Process:
1. Red phosphorus is heated to 1000°C at 10kbar. 2. The red phosphorus is cooled at a rate of 100°C an hour to 600°C.
Red Phosphorus Structure Black Phosphorus Structure
Black Phosphorus Field Effect Transistors Albert Liu Black - - PowerPoint PPT Presentation
Black Phosphorus Field Effect Transistors Albert Liu Black - - PowerPoint PPT Presentation
Black Phosphorus Field Effect Transistors Albert Liu Black Phosphorus Synthesis Process: Red phosphorus is heated to 1000 C at 10kbar. 1. The red phosphorus is cooled at a rate of 100 C an hour to 600 C. 2. Red Phosphorus
SLIDE 2
SLIDE 3
Fabrication of FET Transistors
3
- Fabrication Process:
1. Thin flakes of Black Phosphorus peeled from bulk crystal 2. Flakes deposited on silicon wafer with SiO2 layer in between 3. Metal (Cr, Au) contacts deposited on top of flakes by evaporation
SLIDE 4
Drain Current Modulation
4
- Large drain current modulation observed
- Large subthreshold swing observed (~5V per decade)
Vds = 10mV (red curve) and 100mV (green curve)
SLIDE 5
Hall Coefficient
5
- The Hall coefficient is given by (for electrons):
- Positive (negative) hall coefficient was observed for negative
(positive) gate voltage
SLIDE 6
Drain Current Saturation
6
- Device parameters:
– Device thickness: 5nm – Oxide thickness: 90nm – Channel length: 4.5microns – Channel width: 2.3microns
Vg = -30V (black), -25V (red), -20V (green), -15V (blue)
SLIDE 7
Sheet Resistance
7
- The sheet resistance RS is defined by:
SLIDE 8
Mobility Temperature Dependence
8
- Above 100K, the mobility follows a power law:
where
SLIDE 9
Citation
9
Nature Nanotechnology 9, 372–377 (2014)