SEU-Hardened Energy Recovery Pipelined Interconnects for On-Chip Networks
- A. Ejlali*, B. M. Al-Hashimi†
*Computer Engineering Dept.
Sharif University of Technology Tehran, Iran
†Electronics and Comp. Science
University of Southampton Southampton, UK
SEU-Hardened Energy Recovery Pipelined Interconnects for On-Chip - - PowerPoint PPT Presentation
SEU-Hardened Energy Recovery Pipelined Interconnects for On-Chip Networks A. Ejlali*, B. M. Al-Hashimi Electronics and Comp. Science * Computer Engineering Dept. University of Southampton Sharif University of Technology Southampton, UK
Sharif University of Technology Tehran, Iran
†Electronics and Comp. Science
University of Southampton Southampton, UK
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IN DFF A1 DFF A2 DFF A3 DFF A4 OUT
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2
DD L Conv
GND VDD TR Charge TF Discharge Clock Period
2
DD L RF L Cur Cons
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P0 P1 P2 P3 P0 P1
L Stage
2 DD L RF L pipelined non
V C T RC E =
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2 2
DD L RF L Stage pipeline DD Stage RF Stage Stage
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– Energy Recovery Pipelined Interconnects
– SEU-Hardened and Energy Recovery Pipelined Interconnects
– Eight-phase dual-rail logic
– 2LAL
– SEU-Hardness has not been considered
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ER Buffer Ai-1 Ai-1 Ai Ai Ai+1 Ai+1 Pj-1 Pj-1 Pj Pj Ai-1 Pj-1 Ai-1 Ai Ai+1 Ai-1 Ai Ai Pj Ai-1 Ai Ai Pj-1 Ai Ai+1 VDD Pj Ai-1 Ai Ai-1
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ER Buffer A1 A1 A3 A3 P1 P1 P2 P2 ER Buffer A2 A2 A4 A4 P2 P2 P3 P3 A3 A3 ER Buffer IN IN A2 A2 P0 P0 P1 P1
P0 P1 P2 P3 IN IN A1 A1 A2 A3 Time
1 2 3 4 5 6 7 8 9 10 11 13 14 15 16 17 18 19 20 21 22 23 12
1 1 1
A detailed example in Pages 4 and 5 of the paper
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ER Buffer A1 A1 A3 A3 P1 P1 P2 P2 ER Buffer A2 A2 A4 A4 P2 P2 P3 P3 A3 A3 ER Buffer IN IN A2 A2 P0 P0 P1 P1
P0 P1 P2 P3 IN IN A1 A1 A2 A3 Time
1 2 3 4 5 6 7 8 9 10 11 13 14 15 16 17 18 19 20 21 22 23 12
Sensitive Hardened
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P P A A ~A #2 Clock Period #1 #3 #4 #5
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Ai-1 Pj-1 Ai-1 Ai Ai Pj Ai-1 Ai Ai Pj-1 VDD Pj Ai-1 Ai Pj-1 Pj Pj-1 VDD Pj Ai Ai-1
Ai ~Ai ~Ai ~Ai-1 ~Ai ~Ai-1 ~Ai ~Ai ~Ai ~Ai-1 ~Ai
SHER Buffer Pj-1 Pj-1 Pj Pj Ai-1 Ai-1 ~Ai-1 ~Ai-1 Ai Ai ~Ai ~Ai
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P0 P1 P2 P3 IN ~IN A1 A2 A3 Time
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~IN IN ~A1 ~A2 ~A3
SHER Buffer A1 A1 P1 P1 P2 P2 SHER Buffer A2 A2 P2 P2 P3 P3 A3 A3 SHER Buffer IN IN P0 P0 P1 P1 ~IN ~IN ~A1 ~A1 ~A2 ~A2 ~A3 ~A3
A detailed example in Pages 6, 7 and 8 of the paper
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– 45nm PTM technology
– CL=1pF
– Throughput = 0.1 Gbps
– A random bit string consisting of 120 bits
– Faults were injected using current sources
T t Inj
e T t T Q t I
−
⋅ ⋅ ⋅ = π 2 ) (
Pj-1 VDD Pj Ai-1
Ai ~Ai ~Ai ~Ai-1 ~Ai IInj
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Pipelining Scheme # of FFs or # of Buffers Average Power (uW) Energy consumption*(pJ) 3 FFs 11.90 14.28 4 FFs 12.14 14.57 5 FFs 12.42 14.91 12 BUFs 7.42 8.90 16 BUFs 6.36 7.63 20 BUFs 5.56 6.67 12 BUFs 11.22 13.47 16 BUFs 9.62 11.54 20 BUFs 8.41 10.09 SHER ER Conventional * The energy consumption when a bit string with 120 random bits is transmitted
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Pipelining Scheme # of FFs or # of Buffers # of SEUs % of SEUs* 3 FFs 377 9.2 4 FFs 618 15.08 5 FFs 792 19.33 12 BUFs 502 12.26 16 BUFs 816 19.92 20 BUFs 844 20.61 12 BUFs 16 BUFs 20 BUFs 2 0.05 * 4096 faults (simulated particle strikes) were totally injected SHER ER Conventional
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– Depth of pipelining⇑ ⇒ Throughput⇑
– Depth of pipelining⇑ ⇒ Energy consumption⇓
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DD L RF L Cur Cons
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