PVMD Arno Smets Delft University of Technology Learning objectives - - PowerPoint PPT Presentation

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PVMD Arno Smets Delft University of Technology Learning objectives - - PowerPoint PPT Presentation

PIN junction PVMD Arno Smets Delft University of Technology Learning objectives What is a PIN junction Why is a PIN junction used for thin film silicon solar cells Importance of doped layers Charge carrier transport mechanisms


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SLIDE 1

PVMD

Delft University of Technology

PIN junction

Arno Smets

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SLIDE 2

Learning objectives

  • What is a PIN junction
  • Why is a PIN junction used for thin film silicon solar cells
  • Importance of doped layers
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SLIDE 3

Diffusion

Charge carrier transport mechanisms

Drift

E-Field

_ +

_ +

P-type N-type

Charge carrier density position

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SLIDE 4

Diffusion length

a-Si:H LD < 300 nm c-Si LD ~ 300 μm

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SLIDE 5

Charge carrier density

Diffusion

Charge carrier transport mechanisms

Drift

position

E-Field

_ +

_ +

P-type N-type

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SLIDE 6

EFermi Intrinsic a-Si:H n-a-Si:H p-a-SiC:H

PIN junction

Valence band Conduction band

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SLIDE 7

EFermi Intrinsic a-Si:H n-a-Si:H p-a-SiC:H

PIN junction

+ _

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SLIDE 8

PIN cell

i-a-Si:H Metal back contact Glass superstrate TCO p-a-SiC:H n-a-Si:H

p i n

_ +

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SLIDE 9

Doped layer requirements : 1. Optimal refractive index

  • 2. High bandgap energy

3. Adequate transverse conductivity

PIN cell

p i n

_ +

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SLIDE 10

Charge carrier density Diffusion Drift position E-Field _ + _ + P-type N-type i-a-Si:H Metal back contact glass TCO ZnO/SiOx back reflector p-a-SiC:H n-a-Si:H

p i n _ +

Window layer requirements : 1. Optimal refractive index

  • 2. High bandgap energy

3. Adequate transverse conductivity