PVMD Delft University of Technology Learning objectives Advanced - - PowerPoint PPT Presentation

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PVMD Delft University of Technology Learning objectives Advanced - - PowerPoint PPT Presentation

Advanced Concepts - part 2 Ren van Swaaij PVMD Delft University of Technology Learning objectives Advanced concepts based on crystalline silicon: Learning objectives Advanced concepts based on crystalline silicon: Silicon


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SLIDE 1

PVMD

Delft University of Technology

Advanced Concepts - part 2

René van Swaaij

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SLIDE 2

Learning objectives

  • Advanced concepts based on crystalline silicon:
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SLIDE 3

Learning objectives

  • Advanced concepts based on crystalline silicon:
  • Silicon heterojunction (HIT)
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SLIDE 4

Learning objectives

  • Advanced concepts based on crystalline silicon:
  • Silicon heterojunction (HIT)
  • Inter-digitated back contacted (IBC)
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SLIDE 5

Learning objectives

  • Advanced concepts based on crystalline silicon:
  • Silicon heterojunction (HIT)
  • Inter-digitated back contacted (IBC)
  • Top performance: IBC + HIT
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SLIDE 6

Silicon heterojunction solar cells

HIT: Heterojunction with Intrinsic Thin layer

Source figure: Sanyo (now Panasonic) Masuko et al., IEEE-JPV 4, 1433- 1435 (2014)

Efficiency up to 25.6%

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SLIDE 7

Silicon heterojunction solar cells

  • 1. Random texture for light

trapping

HIT: Heterojunction with Intrinsic Thin layer

Source figure: Sanyo (now Panasonic) Masuko et al., IEEE-JPV 4, 1433- 1435 (2014)

Efficiency up to 25.6%

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SLIDE 8

Silicon heterojunction solar cells

  • 1. Random texture for light

trapping

  • 2. a-Si:H surface passivation

HIT: Heterojunction with Intrinsic Thin layer

Source figure: Sanyo (now Panasonic) Masuko et al., IEEE-JPV 4, 1433- 1435 (2014)

Efficiency up to 25.6%

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SLIDE 9

Silicon heterojunction solar cells

  • 1. Random texture for light

trapping

  • 2. a-Si:H surface passivation
  • 3. Bifacial design

HIT: Heterojunction with Intrinsic Thin layer

Source figure: Sanyo (now Panasonic) Masuko et al., IEEE-JPV 4, 1433- 1435 (2014)

Efficiency up to 25.6%

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SLIDE 10

Silicon heterojunction solar cells

  • 1. Random texture for light

trapping

  • 2. a-Si:H surface passivation
  • 3. Bifacial design
  • 4. n-type c-Si: longer hole

lifetimes Þ longer diffusion length

HIT: Heterojunction with Intrinsic Thin layer

Source figure: Sanyo (now Panasonic) Masuko et al., IEEE-JPV 4, 1433- 1435 (2014)

Efficiency up to 25.6%

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SLIDE 11

Silicon heterojunction solar cells

  • 1. Random texture for light

trapping

  • 2. a-Si:H surface passivation
  • 3. Bifacial design
  • 4. n-type c-Si: longer hole

lifetimes Þ longer diffusion length

  • 5. Low cost and low

temperature processing

HIT: Heterojunction with Intrinsic Thin layer

Source figure: Sanyo (now Panasonic) Masuko et al., IEEE-JPV 4, 1433- 1435 (2014)

Efficiency up to 25.6%

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SLIDE 12

Interdigitated back-contacted (IBC) solar cell

Efficiency up to 25.2%

Source figure: Sunpower Werner T, Analyst Day, 12 November, 2015, Slide 24

n p

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SLIDE 13

Interdigitated back-contacted (IBC) solar cell

  • 1. Random texture for light

trapping

  • 2. Oxide layer for surface

passivation

Efficiency up to 25.2%

Source figure: Sunpower Werner T, Analyst Day, 12 November, 2015, Slide 24

n p

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SLIDE 14

Interdigitated back-contacted (IBC) solar cell

  • 1. Random texture for light

trapping

  • 2. Oxide layer for surface

passivation

  • 3. All contacts at back to

prevent shading

Efficiency up to 25.2%

Source figure: Sunpower Werner T, Analyst Day, 12 November, 2015, Slide 24

n p

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SLIDE 15

Interdigitated back-contacted (IBC) solar cell

  • 1. Random texture for light

trapping

  • 2. Oxide layer for surface

passivation

  • 3. All contacts at back to

prevent shading

  • 4. Localized contacts: reduction

recombination loss

Efficiency up to 25.2%

Source figure: Sunpower Werner T, Analyst Day, 12 November, 2015, Slide 24

n p

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SLIDE 16

Interdigitated back-contacted (IBC) solar cell

  • 1. Random texture for light

trapping

  • 2. Oxide layer for surface

passivation

  • 3. All contacts at back to

prevent shading

  • 4. Localized contacts: reduction

recombination loss

  • 5. n-type c-Si: longer hole

lifetimes Þ longer diffusion length

Efficiency up to 25.2%

Source figure: Sunpower Werner T, Analyst Day, 12 November, 2015, Slide 24

n p

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SLIDE 17

Interdigitated Back Contacted solar cell

  • 1. Larger cross-section

contacts since they are at the back

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SLIDE 18

Interdigitated Back Contacted solar cell

  • 1. Larger cross-section

contacts since they are at the back

  • 2. Area of p+ region larger

due to diffusion length

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SLIDE 19

Best of two worlds: IBC-HIT

Kaneka Corporation, Nature Energy 2, (2017)

Efficiency of 26.6%

ARC n-type c-Si a-Si:H passivation i-a-Si:H p-a-Si:H / n-a-Si:H pattern

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SLIDE 20

Best of two worlds: IBC-HIT

  • 1. Texture for light trapping

Efficiency of 26.6%

ARC n-type c-Si i-a-Si:H

Kaneka Corporation, Nature Energy 2, (2017)

a-Si:H passivation p-a-Si:H / n-a-Si:H pattern

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SLIDE 21

Best of two worlds: IBC-HIT

  • 1. Texture for light trapping
  • 2. a-Si:H surface passivation

Efficiency of 26.6%

ARC n-type c-Si i-a-Si:H

Kaneka Corporation, Nature Energy 2, (2017)

p-a-Si:H / n-a-Si:H pattern a-Si:H passivation

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SLIDE 22

Best of two worlds: IBC-HIT

  • 1. Texture for light trapping
  • 2. a-Si:H surface passivation
  • 3. All contacts at back to prevent

shading

Efficiency of 26.6%

ARC n-type c-Si i-a-Si:H

Kaneka Corporation, Nature Energy 2, (2017)

p-a-Si:H / n-a-Si:H pattern a-Si:H passivation

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SLIDE 23

Best of two worlds: IBC-HIT

  • 1. Texture for light trapping
  • 2. a-Si:H surface passivation
  • 3. All contacts at back to prevent

shading

  • 4. Localized contacts: reduction

recombination loss

Efficiency of 26.6%

ARC n-type c-Si i-a-Si:H

Kaneka Corporation, Nature Energy 2, (2017)

p-a-Si:H / n-a-Si:H pattern a-Si:H passivation

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SLIDE 24

Best of two worlds: IBC-HIT

  • 1. Texture for light trapping
  • 2. a-Si:H surface passivation
  • 3. All contacts at back to prevent

shading

  • 4. Localized contacts: reduction

recombination loss

  • 5. n-type c-Si: longer hole

lifetimes Þ longer diffusion length

Efficiency of 26.6%

ARC n-type c-Si i-a-Si:H

Kaneka Corporation, Nature Energy 2, (2017)

p-a-Si:H / n-a-Si:H pattern a-Si:H passivation

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SLIDE 25

Summary

  • Silicon heterojunction cell improves open circuit

voltage

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SLIDE 26

Summary

  • Silicon heterojunction cell improves open circuit

voltage

  • IBC all contacts at the back to optimise absorption
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SLIDE 27

Summary

  • Silicon heterojunction cell improves open circuit

voltage

  • IBC all contacts at the back to optimise absorption
  • IBC + HIT combines the best of both worlds for

record efficiencies