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Paper presentation Ultra-Portable Devices Paper: Hooman Darabi, - - PowerPoint PPT Presentation

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Paper presentation Ultra-Portable Devices Paper: Hooman Darabi, Janice Chiu, A noise Cancellation Technique in Active RF-CMOS Mixers. Journal of Solid-State Circuits, vol. 40, no. 12, pp. 2628- 2632, Dec 2005. (compact version also at

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Paper presentation – Ultra-Portable Devices

Paper: Presented by:

Hooman Darabi, Janice Chiu, A noise Cancellation Technique in Active RF-CMOS Mixers. Journal of Solid-State Circuits, vol. 40, no. 12, pp. 2628- 2632, Dec 2005.

(compact version also at ISSCC, feb. 2005)

Carl Bryant

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Outline

  • Introduction
  • Noise sources
  • Noise improvement
  • Implementation
  • Results
  • Summary

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Introduction

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  • Double balanced mixer
  • 1/f (flicker) noise important for direct conversion receiver
  • Most 1/f noise comes from switch pair
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Introduction

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1/f noise White noise Noise Frequency

  • 1/f noise produced when drain current nonzero
  • Noise large for low frequencies
  • Narrowband receiver may operate below total noise corner
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Noise sources

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LO

Switch fully ON Switch fully OFF Both switch devices conducting

  • Switch pair contributes no noise when fully on/off
  • Noise introduced during zero crossings
  • Noise modulates zero crossings
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Noise sources

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Noise Improvement

  • Reduce flicker noise component:
  • Increasing switch size

– Slower switches – Increases capacitive load of input devices

  • Reduce width of noise pulses:
  • Faster LO slopes

– Increses power consumption in LO buffers – Supply voltage limits LO amplitude

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Noise improvement

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  • Increases switch stage impedance 1/gm
  • More current shunted through parasitic capacitance
  • Reduces bandwidth and linearity
  • Reduce height of noise pulses
  • Reducing switch stage current
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Noise improvement (this work)

  • Reduce switch stage current dynamically
  • Starve switch stages only during switching event
  • Detect switch event by monitoring source voltage

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Noise improvement

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Implementation

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Implementation

  • Injection devices should be dimensioned to turn on/off
  • Large injection devices add parasitic capacitance
  • Since the noise is reduced, switch pair can be made smaller
  • TSMC 0.13μm

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Results

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Results

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Summary

  • Significant improvement of flicker noise
  • Little negative impact on performance

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Chip photo

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Further reading

  • Darabi H., Abidi A.A.,“Noise in RF-CMOS mixers: a simple

physical model”, Solid-State Circuits, IEEE Journal of , vol.35, no.1, pp.15-25, Jan 2000

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