Nanowire light-emitters*
- E. Towe and L. Chen*,
towe@cmu.edu
Carnegie Mellon
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Carnegie Mellon University
Pittsburgh, Pennsylvania, USA
*Supported by DoD and Intel *Now with NanoPhotonics, Inc
Nanowire light-emitters* E. Towe and L. Chen*, towe@cmu.edu - - PowerPoint PPT Presentation
Nanowire light-emitters* E. Towe and L. Chen*, towe@cmu.edu Carnegie Mellon University Pittsburgh, Pennsylvania, USA *Supported by DoD and Intel *Now with NanoPhotonics, Inc 1 Carnegie Mellon Outline Some background on light-emitters;
towe@cmu.edu
Carnegie Mellon
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Pittsburgh, Pennsylvania, USA
*Supported by DoD and Intel *Now with NanoPhotonics, Inc
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Oxide Layer Active Large numbers of VCSELs can be manufactured using batch techniques; but integration with other devices is still not a routine process.
Optically pumped ZnO nanowire emiters with diameters from 20 – 150 nm, and lengths ~10 um.
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5 Huang, Mao, Feick, Yan, Wu, Kind, Weber, Russo, Yang, Science 292 1897 (2001).
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Possion’s EQ Continuity EQs
Carrier Transport
Schrodinger EQ
Carrier-Photon Interaction Semiconductor laser simulation
Possion’s EQ Continuity EQs
Carrier Transport
Schrodinger EQ
Carrier-Photon Interaction Semiconductor laser simulation
Possion’s EQ Continuity EQs
Carrier Transport
Poisson’s EQ Continuity EQs
Carrier Transport
Schrodinger EQ
Carrier-Photon Interaction
Schrödinger's EQ
Carrier-Photon Interaction Semiconductor laser simulation
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7 Maxwell EQs
Optical field propagation
Thermdynamic EQs
Heat transfer simulation Device equations governing semiconductor lasers
Maxwell EQs
Optical field propagation
Thermdynamic EQs
Heat transfer simulation
Maxwell EQs
Optical field propagation
Maxwell’s EQs
Optical field propagation
Thermdynamic EQs
Heat transfer
Thermdynamic EQs
Heat transfer simulation Device equations governing semiconducto
Carrier Transport Equations (Local)
st sp
SRH au n
st sp
SRH au p
n, p – electron, hole concentrations Jn, Jp -- current densities Sm -- Photon density of mth mode
− + −
+ − = ∇ − ⋅ ∇
A D static
N N n p q ψ ε ε 0
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G -- carrier generation rate R -- carrier recombination rates D -- diffusion coefficient
n n n
p p p
(Global) (Global) (Global)
= + −
total sp,
m
R
β
m m
S S
Gm -- modal gain calculated from local gain τopt -- photon life time β
Rsp,total -- total spontaneous emission rate
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InAs/InP heterostructures
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13 Bjork, Ohlsson, Sass, Persson, Samuelson Nano Lett. 2 No. 2, 87-89 (2002).
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Chen and Towe, Appl. Phys. Lett., 87 103111 (2005).
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Chen and Towe, Appl. Phys. Lett., 87 103111 (2005).
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n = 2.55, radius = R n = 2.30, radius = Ri = 0.5R
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