Д.А. Свинцов1,2, В.И. Рыжий3, T. Otsuji3
- 1. Физико-технологический институт РАН
- 2. Московский физико-технический институт
- 3. Research institute of electrical communication, Tohoku university
Outline High-frequency (optical) conductivity of graphene; Optical - - PowerPoint PPT Presentation
.. 1,2 , .. 3 , T. Otsuji 3 1. - 2. - 3. Research institute of
Д.А. Свинцов1,2, В.И. Рыжий3, T. Otsuji3
High-frequency (optical) conductivity of graphene; Optical conductivity under population inversion
Direct interband transitions Carrier-carrier scattering and intraband absorption Indirect interband transitions
THz lasing in optically or electrically pumped graphene? GOOD IDEA! But what about
absorption (strong at low frequencies)?
Perot resonator,” Appl. Phys. Express 2 (2009).
4 1 / 2 2 1
4 l 4 Re n 1
F T
e T e
4
/ 2 / 2 4
V C
e f f
Varlamov, Eur. Phys. J. B 56, 281
4 1 / 2 2 1
8 l 4 Re n 1
F T
e T e
4
/ 2 tanh 4 2
F
e T
Electron-hole, electron-electron and hole-hole scattering govern the intraband conductivity Velocity-momentum decoupling 1 2 3 4
0 / p
p
Does not necessarily lead to 1 2 3 4
1 2 3 4
fi
2 3 2 2 / 3
1 Re 1 / , / 4
T ee ee F
e e T e I T T
v
2 3 2 2 / 3
2 Re 1 / , / 4
T eh eh F
e e T e I T T
v
2 2 2 1 2 , 1 2 1 2 1 2 2 2
( ) cos / 2 cos / 2 [ / ] ( )
ee ee
d d d I k k T k k Q Q
Q k k n
1 2 1 2
( ) ( ) 1 ( ) 1 ( ) f k f k f k f k
2 2 2 2 2 1 2 , 1 2 1 2 2 2
( ) cos / 2 cos / 2 sin / 2 sin / 2
eh eh
d d d I Q
Q k k n
1 2 1 2 1 2 1 2
[ / ] ( ) ( ) 1 ( ) 1 ( ) k k T k k f k f k f k f k
Fermi golden rule + occupation numbers of initial and final states:
increases.
Real parts of net dynamic conductivity Re(σintra +σinter) normalized by σq=e2/4ђ at different quasi-Fermi energies εF in graphene structures with different background dielectric constants κ0 (T = 300 K).
2 2 /
1 , 8 ln 1
F T
TF F q T
e e T q e q q v v V
Thomas-Fermi screening leads to weak dependence on k0
Threshold frequencies (solutions of Re(σintra+σinter) = 0) vs. background dielectric constant at different temperatures T (εF = 75 meV)
pumped graphene” arXiv:1408.7023
( , ) ˆ | | 2
cc S
e V c V c c
p p pp
v v A p p ( , ) ˆ | | 2
cv S
e V c V v c
p p pp
v v A p p
2 2 intra 3 , ,
2 ˆ Re ( ) ( ) | |
D q S
g f f V
p p p p p p p p
p p v v
Energy conservation requires q=|p-p’|>w/v0!
2 2 inter 3 ,
2 ˆ Re ( ) ( ) | | .
D q v c S
g f f c V v
p p p p p p p p
p p v v
Energy conservation requires q=|p-p’|<w/v0! Need scattering potentials with either singular at or quickly decreasing as !
2
ˆ | |
S
V p q p
q q
Scattering by Gaussian correlated disorder
2 2 2
2
2 ( /2) 2 2
c
ql S c
pp
Intraband Drude absorption is suppressed due to requirement q=|p-p’|>w/v0
Science 317, 219 (2007)
Calculated frequency dependencies of the interband, intraband and net Drude conductivity (normalized by sq) in pumped graphene with quasi-Fermi energy eF = 50 meV. The distribution of impurities is Gaussian. The dashed line indicates the region w<n, where our calculations are not rigorous. Real part of the net Drude conductivity (normalized by sq) vs. frequency at different correlation lengths lc.
2 2 2 /2 + /2 2 1 /2 + /2 + / , 2 /2 x
d v f f ie i
p k p k p k p k p k p k
p
2 2 12 21 /2 + /2 2 2 2 1 + /2 /2 + /2 /2
2
x x
d v v f f ie i
p k p k p k p k p k p k
p
Intraband term Interband term
2
2 e / 2 / 4 R
k V C
e f f
Uniform field k=0
Optical / IR range Far IR and THz range
inter 2 inter
4 Re 2.3% e k c c
intr int a 2 ra 2
4 Re
e e
k c
Optical pumping + fast relaxation + slow
4 / 2 2
/ 2 8 ln 1 tan R h 4 2 e
F T
e F e
T e e T
Color map of real part of net dynamic conductivity Re(σintra +σinter)/σq vs. frequency and quasi-Fermi energy for κ0 = 5: at T = 300 K and at T = 200 K. The area Re(σintra+σinter)/σq < 0.75 is filled in solid color
Carrier-carrier scattering in pumped graphene sets the
Increasing the background dielectric constant slightly
Intraband conductivity slowly (almost linearly) grows
2 2 /
1 , 8 ln 1
F T
TF F q T
e e T q e q q v v V
Thomas-Fermi screening leads to weak dependence on eF
Real parts of intraband dynamic conductivity Reσintra (solid lines) and interband conductivity −Reσinter (dashed line) as functions of quasi-Fermi energy εF at fixed frequency ω/(2π) = 6 THz and different values of background dielectric constant κ0.
Matching with variational solution of kinetic equation
1 ,
1 exp
p F
C f T
p p
Ev
2 2 2
2 Re ln 1 exp ,
cc B F intra B cc
k T e k T
2 ,0 ,0 13 1 2 /
10 s at 1 4 ln 1
F
ee eh c B cc T
I I k T e
Construct a functional such that kinetic equation represents its minimum condition; Calculate the functional with trial function + minimize with respect to Cw
A.B. Kashuba, Phys. Rev. B 78, 085415 (2008), L. Fritz et. al. Phys. Rev. B 78, 085416 (2008).