III-V Nanowire Growth for Quantum Photonics and Optoelectronics Ray - - PowerPoint PPT Presentation

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III-V Nanowire Growth for Quantum Photonics and Optoelectronics Ray - - PowerPoint PPT Presentation

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III-V Nanowire Growth for Quantum Photonics and Optoelectronics Ray LaPierre lapierr@mcmaster.ca Department of Engineering Physics McMaster University, Hamilton, Ontario, Canada Semiconductor Nanowires 2D array of semiconductor rods III-V

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Ray LaPierre lapierr@mcmaster.ca Department of Engineering Physics McMaster University, Hamilton, Ontario, Canada

III-V Nanowire Growth for Quantum Photonics and Optoelectronics

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Semiconductor Nanowires

2D array of semiconductor rods III-V material: (In,Ga,Al)-(P,As,Sb) Single crystals Diameter ~ 10 – 500 nm Length ~ 1 – 10 mm

2 mm 1 mm 500 nm

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The Role of III-V Nanowires in Quantum Information Science and Engineering

  • Majorana fermions
  • Single photon sources & detectors

Science 336 (2012) 1003 Nature Physics 8 (2012) 887

  • Nat. Commun. 3 (2012) 737
  • Nat. Nanotech. 12 (2017) 1026

QIP (2020) 19, 44 Materials (2020) 13, 1400

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Molecular Beam Epitaxy (MBE)

Ga Al substrate AsH3 PH3 gas cracker In Sb

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Au-assisted Nanowire Growth Process

Au deposition III-V deposition (MBE)

500 nm

Substrate III (Ga) V (As2)

Au droplet Diameter & length dispersion

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Controlled length, diameter, position, composition & doping

SiO2

Si substrate

SiO2 hole

III droplet Lithographic patterning III-V deposition (MBE)

Self-assisted Selective-area Epitaxy

500 nm

D P

III (Ga) V (As2)

D = 50-100 nm P = 360 – 1000 nm

500 nm

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Example: GaP Nanowires

  • J. Crystal Growth 462 (2017) 29
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Group V Dependence

Si III (Ga) V (P2) Primary Flux SiOx

  • J. Crystal Growth 462 (2017) 29
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Pitch/Period Dependence

  • J. Crystal Growth 462 (2017) 29

Nanotechnology 25 (2014) 415304 Nano Futures 1 (2017) 035001 GaAs InSb GaP

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Pitch Dependence

SiOx Si III (Ga) V (P2) III (Ga) V (P2) Secondary Flux Nanotechnology 25 (2014) 415304

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1 mm 1 mm

Droplet Dynamics: Diameter Control

V/III flux ratio > 1 V/III flux ratio ~ 1

IEEE J. Photovolt. 9 (2019) 1225

Optical funnel/horn

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Quantum wire Quantum dot Encapsulation, passivation

Group III Dependence

High temperature Low V/III flux ratio Low temperature High V/III flux ratio High III adatom diffusivity  Axial growth Low III adatom diffusivity  Radial growth Core-shell heterostructures

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Core-Shell Heterostructures

  • Radial quantum wells

Opportunity 1: Unique Heterostructures

Axial Heterostructures

  • Quantum dots
  • Superlattices
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Dislocations III-V Thin Films Si Dislocation-free

Opportunity 2: Heterogeneous Growth on Si

III-V zinc-blende crystal structure Si diamond crystal structure Nanowires

PRB 74 (2006) 121302(R)

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Integration with Si Photonics

ACS Photonics 7 (2020) 1016

  • J. Appl. Phys. 125 (2019) 243102
  • Appl. Phys. Lett. 115 (2019) 213101

PSS RRL 13 (2019) 1800489 Nano Lett. 17 (2017) 5244 Nano Lett. 16 (2016) 1833 ACS Photonics 4 (2017) 2537

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Challenge 1: Surface Passivation

GaAs AlInP

Au Ga As Al In P

GaAs AlInP

Au Ga As Al In P

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Surface Passivation

JAP 111 (2012) 094319 JAP 112 (2012) 063705 SST 28 (2013) 105026 unpassivated passivated unpassivated passivated

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Challenge 2: Doping

Nanowire reconstruction by electron holography

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Introduction

Three-fold Symmetric Doping Mechanism

truncated facet TEM Electron holography Phase map Built-in potential Nano Lett. 17 (2017) 5875

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Physica Status Solidi RRL 7 (2013) 815 IEEE J. Photovoltaics 6 (2016) 661 passivation p i n n+

p-Si

SiO2 p i n passivation

Putting It All Together: Nanowire p-i-n Structures

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Single Nanowire Devices (Quantum Computing)

InAs quantum dot

Single Nanowire Device Fabrication

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Ensemble Nanowire Device Fabrication

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Introduction

Diode Characteristics

IEEE J. Photovoltaics 6 (2016) 661

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2 mm l1 l2 l3

Absorbed wavelength depends

  • n nanowire diameter

Opportunity 3: Diameter-dependent Optical Absorption

Nanotechnology 25 (2014) 305303

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400 500 600 700 800 900 1000 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Wavelength(nm) Reflectance

60nm 100nm 125nm 150nm 175nm 200nm

Absorptance

Nanowire Optical Resonant Modes

GaAs, Period: 400 nm, Length: 450 nm

  • HE1n radial waveguide modes
  • Increasing nanowire diameter → Red-shift of absorptance

Nanotechnology 25 (2014) 305303

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Length: 450 nm

Nanotechnology 25 (2014) 305303

  • J. Appl. Phys. 112 (2012) 104311

Length: 1000 nm Length: 2200 nm

Nanowire Length Dependence

GaAs nanowires, Period: 400 nm Photodetectors Power Convertors Photovoltaics

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JAP 105 (2009) 091101

Thin Film Multispectral Photodetectors

Military Biomedical Night Vision Manufacturing Surveillance Search & Rescue IR Astronomy

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Optical Satellite Communications

  • High Throughput and Secure Networks Challenge Program (HTSN)
  • Quantum Encryption and Science Satellite (QEYSSAT)
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InSb Nanowires/Pillars

D = 1300 nm P = 3500 nm

3 µm

D = 300 nm P = 2000 nm D = 500 nm P = 2000 nm D = 700 nm P = 2000 nm D = 900 nm P = 3000 nm D = 1100 nm P = 3000 nm

  • Semicond. Sci. Technol. 34 (2019) 035023
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Experiment Simulation

  • Semicond. Sci. Technol. 34 (2019) 035023

Mid-wavelength Infrared (MWIR) Multispectral Optical Absorption

InSb

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InAs0.36Sb0.64

Long Wavelength Infrared (LWIR) Multispectral Optical Absorption

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Multispectral Nanowire Growth

SiOx Si III (Ga) V (P2) III (Ga) V (P2) Secondary Flux P = 1000 nm D = 440 nm P = 1500 nm D = 475 nm P = 2000 nm D = 505 nm P = 3000 nm D = 520 nm Nano Futures 1 (2017) 035001

Increasing period → increasing diameter InSb:

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Increasing period → increasing diameter → Red-shift of absorptance

Nano Futures 1 (2017) 035001

InSb

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Quantum Dot (QD) Growth Mechanisms F1 D Direct impingement L  F1 Diffusion L  1/D D Desorption L  F2  Pitch Droplet purging L  D F2 L D L

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InAsxP1-x QDs / InP

Nanotechnology 26 (2015) 315202 20 nm 5 7.5 12.5 17.5

Droplet purging L  D

Au InP InAs

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Nanotechnology 29 (2018) 124003

GaAs QDs / GaP

1 mm 100 nm

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Nanotechnology 29 (2018) 124003

GaAs/GaP QD Photodetectors

p-Si i-GaP ITO EF EV EC p-GaP n-GaP i-GaAs QD

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Summary

  • Small pixel size

(single nanowire)

  • Excellent light coupling
  • High responsivity

(better than thin films)

  • Multispectral: Visible to LWIR
  • Unique heterostructures
  • Monolithic integration with Si
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Acknowledgements

  • Paige Wilson, Ph.D.
  • Ara Ghusakan, Ph.D.
  • Nebile Isik, Research Engineer

CEDT

Centre for Emerging Device Technologies

Toronto Nanofabrication Centre

  • Amanda Thomas, M.A.Sc.
  • Curtis Goosney, M.A.Sc.