NEW OPPORTUNITIES IN PHOTONICS NEW OPPORTUNITIES IN PHOTONICS - - PowerPoint PPT Presentation

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NEW OPPORTUNITIES IN PHOTONICS NEW OPPORTUNITIES IN PHOTONICS APPLICATIONS : MICROPLASMA DEVICES APPLICATIONS : MICROPLASMA DEVICES AND ARRAYS FABRICATED IN SEMICONDUCTORS, AND ARRAYS FABRICATED IN SEMICONDUCTORS, CERAMIC AND POLYMER/METAL

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SLIDE 1

NEW OPPORTUNITIES IN PHOTONICS NEW OPPORTUNITIES IN PHOTONICS APPLICATIONS APPLICATIONS

: MICROPLASMA DEVICES

: MICROPLASMA DEVICES AND ARRAYS FABRICATED IN SEMICONDUCTORS, AND ARRAYS FABRICATED IN SEMICONDUCTORS, CERAMIC AND POLYMER/METAL MULTILAYER CERAMIC AND POLYMER/METAL MULTILAYER STRUCTURES STRUCTURES

  • J. G. Eden
  • J. G. Eden

University of Illinois University of Illinois

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 2

MICROPLASMAS: AT THE INTERSECTION OF

OPTOELECTRONICS, MICROFABRICATION, AND PLASMA SCIENCE

  • New realm of discharge
  • peration and characteristics
  • Broad array of applications

PLASMA SCIENCE PHOTONICS

MATERIALS SCIENCE, MICRO- AND NANOFABRICATION

MICROPLASMAS

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 3

SUMMARY

Glow discharges confined to mesoscopic dimensions ( < 10 ~ 100 Glow discharges confined to mesoscopic dimensions ( < 10 ~ 100 µ µm) m) Microcavity volumes: nanoliters Microcavity volumes: nanoliters → → picoliters picoliters A variety of atomic and molecular emitters are available (VUV ~ IR) A variety of atomic and molecular emitters are available (VUV ~ IR) Can be operated continuously at gas pressures beyond one atmosphere at Can be operated continuously at gas pressures beyond one atmosphere at power loadings exceeding 100 kW/cm power loadings exceeding 100 kW/cm3

3

Leveraging MEMs and semiconductor processes for fabrication of Leveraging MEMs and semiconductor processes for fabrication of devices and arrays devices and arrays Emphasis on processes amenable to mass production Emphasis on processes amenable to mass production

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 4

GENERAL CONSIDERATIONS GENERAL CONSIDERATIONS

Macroscopic Annular Cathode

Disk Anode

Thin Film Structure Discharge microcavity dimensions ( d ) on µm scale d As d ↓, surface area / volume ↑ : Importance of microcavity design

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 5

Semiconductor Devices

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SLIDE 6

REPRESENTATIVE Si DEVICE STRUCTURES REPRESENTATIVE Si DEVICE STRUCTURES

Planar Si Electrode Inverted Pyramidal Electrode DRIE Electrode

anode dielectric

cathode

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 7

SEMICONDUCTOR ARRAYS SEMICONDUCTOR ARRAYS

1200 Torr Ne 400 Torr Ne

Inverted Square Pyramidal Cathode

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 8

EMISSION UNIFORMITY: DC EXCITATION,

ATOMIC AND MOLECULAR EMITTERS

Ne Ar Ar/N2

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 9

LARGE ARRAYS FOR AC EXCITATION

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 10

University of Illinois Laboratory for Optical Physics and Engineering

200 × 200 ARRAY : 4 cm2 OF ACTIVE AREA

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SLIDE 11

ARRAY INTENSITY CONTOUR

University of Illinois Laboratory for Optical Physics and Engineering

200 × 200 Arrays

Uniformity : Better than 10 %

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SLIDE 12

1 5 2 0 2 5 3 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0

5 0 0 T o rr 6 0 0 7 0 0 9 0 0 V o lta g e (V p -p ) C u rre n t (m A , R M S ) 2 0 0 x 2 0 0 1 0 k H z

University of Illinois Laboratory for Optical Physics and Engineering

VOLTAGE-CURRENT CHARACTERISTICS : 200 × 200 ARRAY

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SLIDE 13

1 0 1 0

1

1 0

2

1 0

3

1 0

4

1 0

5

1 0 1 0

1

1 0

2

1 0

  • 2

1 0

  • 1

1 0 1 0

1

T o ta l P o w e r C o n s u m p tio n ( W

R M S)

5 k H z 1 0 1 5 N u m b e r o f P ix e ls

N o r m a liz e d P o w e r C o n s u m p tio n ( W

R M S- c m

  • 2)

7 0 0 T o rr N e

POWER CONSUMPTION

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 14

University of Illinois Laboratory for Optical Physics and Engineering

A QUARTER MILLION PIXEL ARRAY :

25 cm2 OF ACTIVE AREA

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SLIDE 15

700 Torr Ne

500 × 500 ARRAY OPERATING in Ne

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 16

University of Illinois Laboratory for Optical Physics and Engineering

700 Torr Ne

500 × 500 ARRAY OPERATING in Ne

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SLIDE 17

University of Illinois Laboratory for Optical Physics and Engineering

PIXEL UNIFORMITY

Attenuation with ND Filter

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SLIDE 18

DRIE Si Devices

(30 µm)2 Single (10 µm)2 Single (30 µm)2 10 X 11 arrays 900 Torr Ne

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 19

0 .4 0 .6 0 .8 1 .0 1 .2 1 .4 1 .6 1 .8 2 .0 2 .2 2 .4 2 .6 2 .8 3 .0 2 9 5 3 0 0 3 0 5 3 1 0 3 1 5 3 2 0 3 2 5 3 3 0

7 0 0 T o r r N e 8 0 0 9 0 0 1 0 0 0 1 1 0 0

V o lta g e (V ) C u rre n t (µA )

I-V Characteristics (10 µm)2 Si DRIE Device

Ni

Si SiO2 Polyimide

10 µm

200 µm

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 20

Xe/O2 Microdischarges in 30 µm DRIE devices

O2 10 mTorr

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 21

Excitation of a Microdischarge Excitation of a Microdischarge with a Reverse-Biased PN Junction with a Reverse-Biased PN Junction

N

Depletion Region

P

Plasma

d = 300 µm, 180 V, 0.45 mA 200 Torr Neon W

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 22

25 × 25 Pixel Array in Glass

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 23

Fresnel Arrays Fresnel Arrays

400 Torr Ne

University of Illinois Laboratory for Optical Physics and Engineering

Device Separation < Coherence Length

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SLIDE 24

MICRODISCHARGE PHOTODETECTORS MICRODISCHARGE PHOTODETECTORS

246.7V, 0.035 mA 234.3 V, 0.113 mA (50 m)2 device, 500 Torr Neon

With Illumination

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 25

Input Power (µW)

10-3 10-2 10-1 100 101 102 103

Photosensitivity (A/W)

10-2 10-1 100

(100 µm)2 Device 500 Torr Ne λ = 780 nm Active Plasma Device Entire Device Die

Photosensitivity

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 26

Spectral Response

University of Illinois Laboratory for Optical Physics and Engineering

Wavelength (nm)

400 500 600 700 800 900 1000 1100

Photosensitivity (A/W)

0.0 1.0 2.0 3.0 4.0 DCD = 36 mA/cm2 DCD = 27 mA/cm2 DCD = 62 mA/cm2 DCD = 58 mA/cm2 (100 µm)2 Device, 500 Torr Ne (50 µm)2 Device, 800 Torr Ne

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SLIDE 27

Spectral Response

Wavelength (nm)

400 500 600 700 800 900 1000 1100

Photosensitivity (A/W)

0.0 1.0 2.0 3.0 4.0

(100 µm)2, Active Plasma Device Scaled APD Response (50 µm)2, Active Plasma Device

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 28

University of Illinois Laboratory for Optical Physics and Engineering

Band Diagram

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SLIDE 29

Ceramic Devices

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SLIDE 30

d anode pad cathode pad ceramic layer anode anode cathode cathode

MULTISTAGE, MONOLITHIC MULTISTAGE, MONOLITHIC CERAMIC MICRODISCHARGE DEVICE CERAMIC MICRODISCHARGE DEVICE

Pre-fired Fired

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 31

PLANAR ARRAY ELECTRODE GEOMETRY

Electrode spacing is ~100 Electrode spacing is ~100 µ µm m Parallel plate annular Parallel plate annular electrode design yields more electrode design yields more electrode area electrode area

  • Better device stability

Better device stability

  • Longer lifetime

Longer lifetime

  • Reduced field enhancement

Reduced field enhancement

University of Illinois Laboratory for Optical Physics and Engineering

Individually-ballasted pixels Individually-ballasted pixels Fabrication by screen printing Fabrication by screen printing

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SLIDE 32

300 Torr Xe

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 33

LINEAR ARRAY LINEAR ARRAY

CW or Pulsed Excitation CW or Pulsed Excitation Bore: 80 Bore: 80 X

X 360

360 µ µm m2

2

Active Length ~1 cm Active Length ~1 cm

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 34

600 Torr Ne

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 35

Intensity

100 200 300 400 500 600 500 1000 1500 2000 2500

Wavelength (nm)

440 450 460 470 480 490 1000 2000 3000 4000 5000

300 V 500 V 800 V

Gain at 460.3 nm: Xe+

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 36

University of Illinois Laboratory for Optical Physics and Engineering

Nanoporous Dielectrics for Microcavity Devices Nanoporous Dielectrics for Microcavity Devices

Pore diameter: tens~hundreds of nm

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SLIDE 37

University of Illinois Laboratory for Optical Physics and Engineering

Al Al2O3

100 µm 200 µm

V

Multilayer Al/Al Multilayer Al/Al2

2O

O3

3 Microplasma Array

Microplasma Array

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SLIDE 38

University of Illinois Laboratory for Optical Physics and Engineering

3 3 × × 3 Array Operating in Ne and Ar/N 3 Array Operating in Ne and Ar/N2

2

700 Torr Ne

500 Torr Ar/N2 (3%)

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SLIDE 39

Flexible Device and Arrays

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SLIDE 40

Thin Film Self-Ballasted Microdischarge Arrays

30 ~ 40 µm Conducting Substrate Resistive Layer Cathode Layer (Ni) Dielectric Anode

V

d = 100 µm Dielectric

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 41

148.2V DC, 15 mA

d = 100 µm, 500 Torr Ne

20 mm

University of Illinois Laboratory for Optical Physics and Engineering

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13 ~ 30 13 ~ 30 µ µm DEVICES m DEVICES

30 µm 30 µm

Metal/Polymer Structure 30 µm dia. Microdischarge Device

ND filter

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 43

Devices Approaching Cellular Dimensions

900 Torr Neon

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 44

Flexible Large Arrays

500 Torr Ne

~ 100 µm dia.

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 45

University of Illinois Laboratory for Optical Physics and Engineering

SEALED LARGE ARRAY: 66 × 66 ARRAY in 3 cm2 OF ACTIVE AREA

100 µm dia. Pixels 760 Torr Ne 10 kHz AC, 800 Vp-p

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SLIDE 46

University of Illinois Laboratory for Optical Physics and Engineering

ADDRESSABLE FLEXIBLE ARRAY

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SLIDE 47

AIR DISCHARGE DEVICES AIR DISCHARGE DEVICES

d = 100 µm, DC 450 V, 4 mA

Ni / BN / Ni

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 48

MICRODISCHARGE ARRAY ASSISTED IGNITION OF A HIGH PRESSURE DISCHARGE

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 49

L=3.5 cm L=1.0 cm

Ar d=400 µm

50 100 150 200 250 300

Pressure (Torr)

350 0.0 0.5 1.0 1.5 2.0 2.5

Vs (kV)

3.0

Microdischarge Array

OFF

I = 1 mA 1.5 mA 2 mA 3 mA

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 50

Microdischarge Device with Carbon Nanotubes Microdischarge Device with Carbon Nanotubes

200 µm CNT Ni screen anode

BN (~70 µm) Ni cathode (50 µm)

25 µm Si 2nd cathode

Type II

CNT

Type I 200 µm SEM Image of Microcavity in Type I

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 51

Microdischarge Device with CNTs Microdischarge Device with CNTs Type I Type I

400 Torr Ne Before Operation

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 52

I-V Characteristics I-V Characteristics

0 .0 2 0 .0 4 0 .0 6 0 .0 8 0 .1 0 0 .1 2 0 .1 4 0 .1 6 0 .1 8 1 2 5 1 3 0 1 3 5 1 4 0 1 4 5 1 5 0

D e v ic e V o lta g e (V ) C u rre n t (m A )

2 0 0 T o rr N e 3 0 0 4 0 0 5 0 0 6 0 0

N i / B N (7 0 µm ) / N i

0 .0 4 0 .0 8 0 .1 2 0 .1 6 0 .2 0 0 .2 4 0 .2 8 1 1 0 1 1 5 1 2 0 1 2 5 1 3 0 1 3 5 1 4 0

D e v ic e V o lta g e (V ) C u rre n t (m A ) 2 0 0 T o rr N e 3 0 0 4 0 0 5 0 0 6 0 0

0 .0 5 0 .1 0 0 .1 5 0 .2 0 0 .2 5 0 .3 0 1 0 8 1 1 2 1 1 6 1 2 0 1 2 4 1 2 8

1 0 0 T o rr N e 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0

D e v ic e V o lta g e (V ) C u rre n t (m A )

Without CNTs

Type I Type II

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 53

Efficiency vs. Ignition Voltage Efficiency vs. Ignition Voltage

2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 .2 7 .6 8 .0 8 .4 8 .8 9 .2 9 .6

R e la tive R a d ia tiv e E ffic ie n c y

P

N e (T o rr)

T yp e I W ith o u t C N T s

1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 1 9 0 2 0 0 2 1 0 2 2 0 2 3 0 2 4 0 2 5 0 2 6 0 2 7 0

W ith o u t C N T s T yp e I T yp e II

S ta rtin g V o lta g e (V )

P

N e (T o rr)

  • Efficiency improved up to ~9 %
  • Ignition voltage reduced by ~18%

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 54

APPLICATIONS APPLICATIONS

Microdischarges

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 55

WHERE DO WE GO FROM HERE?

  • d < 10 µm → < 1 µm

Full Implementation of Nanotechnology d → λ : QED Effects

  • Optical Integration of Emitters

With Waveguides, Micro-Reactors …

  • Operation at Extremely High Pressures ( > 5 atm) :

Clusters, New Regime of Molecular Excitation

University of Illinois Laboratory for Optical Physics and Engineering

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SLIDE 56

K.-H. Park

RESEARCH TEAM RESEARCH TEAM

S.–J. Park

  • N. P. Ostrom

K.-F. Chen

  • C. J. Wagner
  • K. S. Kim
  • K. Kunze
  • M. Leach

UNIVERSITY OF ILLINOIS

  • J. J. Ewing

EWING TECHNOLOGY ASSOCIATES

  • P. von Allmen

(now at NASA, JPL)

  • D. L. Wilcox
  • F. Zenhausern
  • M. Oliver
  • D. Sadler
  • C. Jensen

MOTOROLA LABORATORIES (TEMPE, AZ)

  • M. Zemel
  • M. Klosner
  • K. Jain

ANVIK CORPORATION CAMBRIDGE, UK

  • C. Herring
  • D. Kellner

CAVITON

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SLIDE 57

University of Illinois Laboratory for Optical Physics and Engineering