AUTOMOTIVE APPLICATION Roozbeh Bonyadi School of Engineering, - - PowerPoint PPT Presentation

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AUTOMOTIVE APPLICATION Roozbeh Bonyadi School of Engineering, - - PowerPoint PPT Presentation

DESIGN, SIMULATION AND FABRICATION OF POWER INVERTERS FOR AUTOMOTIVE APPLICATION Roozbeh Bonyadi School of Engineering, University of Warwick (Now at Driveline, Jaguar Land Rover) 22 Oct 2015 OUTLINE Introduction to power inverters used


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SLIDE 1

DESIGN, SIMULATION AND FABRICATION OF POWER INVERTERS FOR AUTOMOTIVE APPLICATION

Roozbeh Bonyadi School of Engineering, University of Warwick (Now at Driveline, Jaguar Land Rover) 22 Oct 2015

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SLIDE 2
  • Introduction to power inverters used in automotive
  • Modelling an automotive power inverter
  • Design challenges
  • Fabrication process
  • Testing the drive cycle
  • Opportunities
  • Conclusion

OUTLINE

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SLIDE 3
  • Converts DC power of the battery to AC power for

e-Machine.

  • Active components
  • IGBTs or MOSFETs
  • PiN diodes or Schottky diodes
  • Passive components
  • DC-link capacitors
  • Filters
  • Driver board and controller

INTRODUCTION TO AUTOMOTIVE POWER INVERTER

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Battery Pack High Power Automotive Cables ICE E-Machine Power Inverter

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SLIDE 4

POWER ELECTRONICS IN TRACTION DRIVE SYSTEM

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  • The goal is to reduce cost, weight and volume and increase the efficiency.

Power Electronics Year ($/kW) (kW/kg) (kW/l) Efficiency 2010 7.9 10.8 8.7 >90% 2012 7 11.2 10 >91% 2015 5 12 12 >93% 2020 3.3 14 13.4 >94%

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SLIDE 5

EXAMPLES OF EV AND PHEV

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~75 Miles on electric range 80 kW electric drive ~250 Miles on electric range 270 kW electric drive ~17 Miles on electric range 60 kW electric drive

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SLIDE 6

POWER INVERTER

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Toyota Prius Inverter Nissan Leaf Inverter Tesla Model S Inverter (single phase) Al Wire Bond Die Solder Electroless Plated Surface Copper Ceramic Copper Electroless Plated Surface

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SLIDE 7

– Rapid and frequent temperature change is the main cause of power inverter failure!

Driving Uphill: Higher Torque → Higher Motor Current → Higher Power Dissipation → Higher Device Temperature Driving Downhill: Lower Torque → Lower Motor Current → Lower Power Dissipation → Lower Device Temperature Driving Fast: Higher Torque and Speed → Higher Motor Current → Higher Power Dissipation → Higher Device Temperature Driving Slow: Lower Torque and Speed → Lower Motor Current → Lower Power Dissipation → Lower Device Temperature

CONTEXT AND RELEVANCE

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Electro-thermal modelling of power electronic system is important during the design phase

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SLIDE 8

– IGBT Model

Reconstruct Ambipolar Diffusion Equation

MODELLING POWER ELECTRONIC DEVICES

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SLIDE 9

P+ N- N+ Electrons z y x

– Diode Model

MODELLING POWER ELECTRONIC DEVICES

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Charge Extraction Charge Extraction

P+ N+ N-

Reverse Recovery

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SLIDE 10

– Electrothermal Modelling Block Diagram

Diode and IGBT junction temperature Heatsink temperature during a drive cycle Phase current Motor speed/torque profile Design an appropriate heatsink

– Thermal resistance – Thermal capacitance

MODELLING POWER ELECTRONIC SYSTEM

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Waveforms

Conduction & Switching Losses Look Up Table (LUT) (1) Losses LUT (2) Post Simulation Initial Simulation PSIM

Power Converter System Electro-Thermal Model Fast, Ideal Switching, Simple Models

Conduction & Switching Losses LUT from the Simulator or Experiments Outputs

  • 1. Diode, IGBT/MOSFET

Junction Temperature

  • 2. Heatsink Temperature
  • 3. Phase Current
  • 4. Motor Speed/Torque

profile

  • 5. Appropriate Heatsink

Thermal Resistance and Capacitance

Select From (1) or (2) Simulink Physical Device Model Slow, Accurate, Complex Parameter Extraction Experiments

Inductive Switching Test Rig

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SLIDE 11

– Comsol multiphysics

PARASITIC INDUCTANCE MODELLING

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Bot Collector Bot Emitter Gate Top Collector Top Emitter

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SLIDE 12

– Comsol multiphysics

PARASITIC INDUCTANCE CALCULATION

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Inductance (nH) Resistance (mΩ) Bottom Switch Collector 10.4381 0.358294 Bottom Switch Emitter 0.906044 0.0214592 Gate 2.53047 0.0817967 Top Switch Collector 1.10261 0.0267436 Top Switch Emitter 3.11811 0.087062 Wirebond (per wire) 5.91523 5.78

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SLIDE 13

– University of Warwick Packaging Facilities

POWER INVERTER PACKAGING

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SLIDE 14

POWER INVERTER PROTOTYPING V.1

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SLIDE 15

– Clamped Inductive Switching Test rig

SWITCHING CHARACTERISTIC

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IGBT Turn-on IGBT Turn-off

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SLIDE 16

– Double side cooling IGBT and diodes, Wire bond-less

  • CooliR 2 IGBT Dies
  • Flip die and die up device configurations
  • Achieve the lowest inductance and shortest

current loop

  • Double side cooling
  • Wire bond-less module
  • Higher reliability
  • Higher power density

POWER INVERTER PROTOTYPING V.2

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Flip die (FD) Die up (DU)

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SLIDE 17

– Double side cooling IGBT and diodes, Wire bond-less

  • Three phase inverter
  • Almost the same size as iPhone 4 (the small
  • ne)
  • Sandwiched dies between two AlN DBC layers

POWER INVERTER PROTOTYPING V.2

iPhone 4 58.6 mm 115.2 mm

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SLIDE 18

– Double side cooling IGBT and diodes, Wire bond-less

POWER INVERTER PROTOTYPING V.2

  • AlSiC top and bottom side pinfin cooling
  • High thermal conductivity
  • CTE close to other layers
  • Higher reliability
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SLIDE 19

– Future of Automotive Power Inverters

OPPORTUNITIES

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By 2020

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SLIDE 20

– Any questions?

“It's about creating the next generation of power devices that are more efficient at using electricity and do so with less heat loss… This is the next generation of semiconductors to replace the silicon chip… The country that figures out how to do this first, and the companies that figure out how to do this best, they're going to be the ones that attract the jobs that go with them.” President Obama, North Carolina, January 2014 THANK YOU!

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