Wayon Super Junction MOSFET Technology and Application - PowerPoint PPT Presentation

Wayon Super Junction MOSFET Technology and Application mosfet.way-on.com 2019 w w w . w a y - o n . c o m

Introduction Registered in 1996 • 2018 turnover: $73 million • • One of the World's Leading Brand of Semiconductor Power Devices and Circuit Protection Devices Wayon Europe Wayon Japan Wayon U.S.A Wayon Korea Wayon Shanghai (H.Q) Wayon Xi’an Wayon Shenzhen Wayon Taiwan

History SJ-MOSFET 800V M3 series released SJ-MOSFET with ESD released 2017 2016 2nd generation SJ-MOSFET Launched Trench MOSFET launched SJ-MOSFET Applied OVP IC applied in SAMSUNG’s cell phone in Sumsung & LG's cellphone Charger 2015 Approved Supplier The TUV TMPL Lab to SGS and SANYO authorized UL CTDP Lab authorized 2014 Approved Supplier to 2013 2004 SAMSUNG and LG 2005 2012 WAYON began to develop Approved supplier to Approved Super Junction (SJ C1) 2001 Apple on iPhone series Supplier to BYD 2006 MOSFET Products 2011 Launched semiconductor protection product 2007 2009 Wayon formally Changyuan Group became 2010 1996 registered the controlling shareholder Approved Supplier to (stock code: 600552) Motorola,SONY Panasonic and HTC PPTC applied in Telecom 1992 application in Bell and Huawei Stem from the R & D on conductive polymer in SRIM 1987

Intellectual Property 1987 Started the R&D on circuit protection products Held 93 patents on semiconductor devices, polymer resettable fuses, Now semiconductor protection devices, SCF, and thermal fuse products 2 Japan Patents 6 US Patents 2 Europe patents

Main Products Product coverage ： Polymer PTC Ceramic PTC SMD Fuse Self control fuse(SCF) Super Junction Mosfet ESD& EOS Device TVS Thyristor Protection IC GDT OVP

Quality System System Cert Hazardous Substance LAB Qualification UL — CDTP Lab TUV — TMPL Lab ISO9001 ISO14001 TS16949 SONY GP Cert.

Power MOSFET Lab. Over 1200 m 2 Lab. in Wayon Shanghai Power Semiconductor Devices Lab. Reliability Test Center Power MOS Application Test Lab. Failure Analysis Center Xi’an Shanghai Shenzhen

SJ-MOS Industrial Level Reliability Test Item Test Condition Duration Sample Size Acc/Reject Referenced standard T A = 150 ° C , HTGB 1000 hrs 77pcs*3lots 0/1 JESD22-A108 Vgs=30V T A = 150 ° C , HTRB 1000 hrs 77pcs*3lots 0/1 JESD22-A108 Vds=80%Vdsmax. T A = 150 ° C HTSL 1000 hrs 77pcs*3lots 0/1 JESD22-A103 121 ° C 205KPA PCT 96 hrs 77pcs*3lots 0/1 JESD22-A102 100%RH -65 ° C to 150 ° C, 500 TCT 77pcs*3lots 0/1 JESD22-A104 air to air, cycles Reliability Capacitance Static characteristics Reverse Diode characteristics Wayon SJ-MOS Switching characteristics Qualification Eoff,Eon EAS IAS SMPS On board test

Major Customers SMPS

SJ-MOS Application Fields SJ-MOS SMPS TV Charger Adapter LED Charging Pile Server/UPS PC

SJ-MOSFET Structure Metal Metal ILD ILD Poly Poly N+ N+ P+ P+ P 4 P E-field BV E-field BV P pillar N- N- N+ N+ • VDMOS introduced in the 1970s • Charge balance principle • Higher BV, larger die size • 1st SJ-MOS patent in 1993 • Rdson*A ∝ BV2.5 • 1st commercial SJ-MOSFET in 1998 • Thinner EPI layer • Rdson*A ∝ BV1.32

SJ-MOSFET Characteristics Rdson vs. BV Capacitance vs. Vds VDMOS Rdson*A [ Ω* mm2] Capacitance (pF) Ciss VDMOS Small package SJ-MOS High power density High efficiency SJ-MOS Coss Si limit Crss Vds(V) BV (V) SMPS miniature with SJ-MOS

SJ-MOSFET Characteristics Multi-EPI Deep Trench Wayon, Infineon, ST, Fairchild Wayon,Toshiba, Fairchild EMI Surge Cost

SJ-MOS Technology Development

SJ-MOS Technology Evolution FOM(Rdson*Qg) Rdson*Qg ( Ω *nC) -38% Competitor 1 C3 Competitor 2 C6 Wayon SJ C1 Wayon SJ C2 CYG Wayon SJ-MOS C2 owns advanced FOM.

Patented SJ-MOS Technology--Rg Q= ω L/R=1/ ω CR PFC circuit with parasitic elements Oscillation can be suppressed by CYG SJ-MOS with 8 Ω internal R g_int , making MOSFET soft switching.

SJ-MOS C2 EMI improvement — Rg Effect of internal Rg on VGS CH1:VDS,CH2:VGS,CH3:IDS C1 Internal Rg: 1 Ω C2 Internal Rg: 8 Ω dv/dt: 19V/ns dv/dt: 16V/ns di/dt: 460A/us di/dt: 380A/us △ Vgs:15V △ Vgs:8.6V Eon:2.6uJ Eon:3.9uJ Vgs SJ-MOS C2 Series integrated 8ohm Rg inside to suppress the vibration caused by swithching in order to further decrease EMI influence.

Patented SJ-MOS Technology--EMI Ciss SJ-MOS C2 Cap. (pF) Coss Wayon SJ-MOS EM Crss VDS (V) Smoother Crss curve, good EMI

Power Devices Road Map IGBT 600V 1200V SiC MOS 600V,1200V SiC SBD 600V 1200V HV-SJMOS EZ, EM 1200V, 950V 500V-900V C2 C4 C5 800V M3 1000V,1050V MV-MOS 200V-400V JMOS LV-MOS Trench MOS SGT MOS SJ MOS Technology 2016 2017 2018 2019 2020

SJ-MOS C2 Product Portfolio 600V SJ-MOSFET C2 R DS(on), max [ Ω] TO-252 TO-251 TO-251S3 TO-251S2 TO-220F TO-220 TO-263 TO-262 TO-247 1.9 WMO04N60C2 WMP04N60C2 WMG04N60C2 WMH04N60C2 WML04N60C2 1.14 WMO07N60C2 WMP07N60C2 WMG07N60C2 WMH07N60C2 WML07N60C2 WMK07N60C2 0.94 WMO09N60C2 WMP09N60C2 WMG09N60C2 WMH09N60C2 WML09N60C2 WMK09N60C2 0.69 WMO10N60C2 WMP10N60C2 WMG10N60C2 WMH10N60C2 WML10N60C2 WMK10N60C2 WMM10N60C2 WMN10N60C2 0.54 WMO11N60C2 WMP11N60C2 WML11N60C2 WMK11N60C2 WMM11N60C2 WMN11N60C2 0.405 WMO14N60C2 WMP14N60C2 WML14N60C2 WMK14N60C2 WMM14N60C2 WMN14N60C2 0.32 WMO16N60C2 WMP16N60C2 WML16N60C2 WMK16N60C2 WMM16N60C2 WMN16N60C2 0.3 WMO20N60C2 WMP20N60C2 WML20N60C2 WMK20N60C2 WMM20N60C2 WMN20N60C2 0.235 WMO22N60C2* WMP22N60C2* WML22N60C2* WMK22N60C2* WMM22N60C2* WMN22N60C2* WMJ22N60C2* 0.19 WML26N60C2 WMK26N60C2 WMM26N60C2 WMN26N60C2 WMJ26N60C2 0.12 WML30N60C2* WMK30N60C2* WMM30N60C2* WMN30N60C2* WMJ30N60C2* 0.099 WML38N60C2 WMK38N60C2 WMM38N60C2 WMN38N60C2 WMJ38N60C2 0.07 WML53N60C2 WMJ53N60C2 0.04 WMJ80N60C2* 650V SJ-MOSFET C2 R DS(on) , max[ Ω] TO-252 TO-251 TO-251S3 TO-251S2 TO-220F TO-220 TO-263 TO-262 TO-247 1.9 WMO04N65C2 WMP04N65C2 WMG04N65C2 WMH04N65C2 WML04N65C2 1.14 WMO07N65C2 WMP07N65C2 WMG07N65C2 WMH07N65C2 WML07N65C2 WMK07N65C2 0.94 WMO09N65C2 WMP09N65C2 WMG09N65C2 WMH09N65C2 WML09N65C2 WMK09N65C2 0.69 WMO10N65C2 WMP10N65C2 WMG10N65C2 WMH10N65C2 WML10N65C2 WMK10N65C2 WMM10N65C2 WMN10N65C2 0.54 WMO11N65C2 WMP11N65C2 WML11N65C2 WMK11N65C2 WMM11N65C2 WMN11N65C2 0.405 WMO14N65C2 WMP14N65C2 WML14N65C2 WMK14N65C2 WMM14N65C2 WMN14N65C2 0.32 WMO16N65C2 WMP16N65C2 WML16N65C2 WMK16N65C2 WMM16N65C2 WMN16N65C2 0.3 WMO20N65C2 WMP20N65C2 WML20N65C2 WMK20N65C2 WMM20N65C2 WMN20N65C2 0.235 WMO22N65C2* WMP22N65C2* WML22N65C2* WMK22N65C2* WMM22N65C2* WMN22N65C2* WMJ22N65C2* 0.19 WML26N65C2 WMK26N65C2 WMM26N65C2 WMN26N65C2 WMJ26N65C2 0.12 WML30N65C2* WMK30N65C2* WMM30N65C2* WMN30N65C2* WMJ30N65C2* 0.099 WML38N65C2 WMK38N65C2 WMM38N65C2 WMN38N65C2 WMJ38N65C2 0.07 WML53N65C2 WMJ53N65C2 0.04 WMJ80N65C2* * Developing

SJ-MOS C2 & M3 Product Portfolio 700V SJ-MOSFET C2 RDS(on),max [Ω] TO-252 TO-251 TO-251S3 TO-251S2 TO-220F TO-220 TO-263 TO-262 2.45 WMO04N70C2 WMP04N70C2 WMG04N70C2 WMH04N70C2 WML04N70C2 1.45 WMO07N70C2 WMP07N70C2 WMG07N70C2 WMH07N70C2 WML07N70C2 WMK07N70C2 1.2 WMO09N70C2 WMP09N70C2 WMG09N70C2 WMH09N70C2 WML09N70C2 WMK09N70C2 0.92 WMO10N70C2 WMP10N70C2 WMG10N70C2 WMH10N70C2 WML10N70C2 WMK10N70C2 WMM10N70C2 WMN10N70C2 0.68 WMO11N70C2 WMP11N70C2 WML11N70C2 WMK11N70C2 WMM11N70C2 WMN11N70C2 0.53 WMO14N70C2 WMP14N70C2 WML14N70C2 WMK14N70C2 WMM14N70C2 WMN14N70C2 0.42 WMO16N70C2 WMP16N70C2 WML16N70C2 WMK16N70C2 WMM16N70C2 WMN16N70C2 800V SJ-MOSFET M3 RDS(on),max [Ω] TO-252 TO-251 TO-220F TO-220 TO-263 TO-262 TO-247 4 WMO03N80M3 WMP03N80M3 WML03N80M3 WMK03N80M3 WMM03N80M3 WMN03N80M3 2.3 WMO05N80M3 WMP05N80M3 WML05N80M3 WMK05N80M3 WMM05N80M3 WMN05N80M3 2 WMO06N80M3 WMP06N80M3 WML06N80M3 WMK06N80M3 WMM06N80M3 WMN06N80M3 1.8 WMO07N80M3 WMP07N80M3 WML07N80M3 WMK07N80M3 WMM07N80M3 WMN07N80M3 1.38 WMO08N80M3 WMP08N80M3 WML08N80M3 WMK08N80M3 WMM08N80M3 WMN08N80M3 1.03 WMO10N80M3 WMP10N80M3 WML10N80M3 WMK10N80M3 WMM10N80M3 WMN10N80M3 0.8 WMO11N80M3 WMP11N80M3 WML11N80M3 WMK11N80M3 WMM11N80M3 WMN11N80M3 0.62 WMO12N80M3 WMP12N80M3 WML12N80M3 WMK12N80M3 WMM12N80M3 WMN12N80M3 WMJ12N80M3 0.48 WMO13N80M3 WMP13N80M3 WML13N80M3 WMK13N80M3 WMM13N80M3 WMN13N80M3 WMJ13N80M3 0.36 WML15N80M3 WMK15N80M3 WMM15N80M3 WMN15N80M3 WMJ15N80M3 0.26 WML25N80M3 WMK25N80M3 WMM25N80M3 WMN25N80M3 WMJ25N80M3 0.195 WML30N80M3 WMK30N80M3 WMM30N80M3 WMN30N80M3 WMJ30N80M3 0.128 WML35N80M3 WMJ35N80M3 * Developing