High Voltage Power MOSFET Portfolio IXYS Corporation WWW.IXYS.COM - PowerPoint PPT Presentation

High Voltage Power MOSFET Portfolio IXYS Corporation WWW.IXYS.COM

High Voltage Power MOSFET Portfolio I. Polar™ Power MOSFETs I. 1200V (Standard & HiPerFET ™) II. Standard Power MOSFETs I. 1500V, 2500V, 3000V, 4500V, 4700V III. High Voltage Packages I. TO-247-3L-HV II. TO-247PLUS-3L-HV III. TO-247-4L IV. i4-Pak (non-isolated)

I. Polar™ Power MOSFETs (standard & HiPerFET ™) (1200V, 0.2A – 32A) Energy efficient. Reliable. FEATURES  Low on-resistance R DS(on) and gate charge Q g  Low thermal resistance R thJC  Fast intrinsic body diodes with very low Q RM and t rr (HiPerFET ™)  Avalanche rated  Excellent dv/dt ruggedness APPLICATIONS  Hard switching inverters  High voltage lighting  Industrial machinery  Medical equipment 3

1200V Polar™ Standard Power MOSFETs Part Number V DSS I D25 R DS(on) C iss Q g t rr R thJC P D Package max. typ. typ. typ. max. Type T C =25 ° C T J =25 ° C V A W pF nC ns ° C/W W IXTP02N120P 1200 0.2 75 104 4.7 1600 3.8 33 TO-220 IXTY02N120P 0.2 75 104 4.7 1600 3.8 33 TO-252 IXTP06N120P 0.6 34 236 13.3 900 3 42 TO-220 IXTA06N120P 0.6 34 236 13.3 900 3 42 TO-263 IXTA08N120P 0.8 25 333 14 900 2.5 50 TO-263 IXTP08N120P 0.8 25 333 14 900 2.5 50 TO-220 IXTP1N120P 1 20 445 17.6 900 2 63 TO-220 IXTA1N120P 1 20 445 17.6 900 2 63 TO-263 IXTY1N120P 1 20 445 17.6 900 2 63 TO-252 IXTY1R4N120P 1.4 13 666 24.8 900 1.45 86 TO-252 IXTP1R4N120P 1.4 13 666 24.8 900 1.45 86 TO-220 IXTA1R4N120P 1.4 13 666 24.8 900 1.45 86 TO-263 IXTA2R4N120P 2.4 7.5 1207 37 920 1 125 TO-263 IXTH2R4N120P 2.4 7.5 1207 37 920 1 125 TO-247 IXTP2R4N120P 2.4 7.5 1207 37 920 1 125 TO-220 IXTP3N120 3 4.5 1100 42 700 0.62 200 TO-220 IXTH3N120 3 4.5 1100 42 700 0.62 200 TO-247 IXTA3N120 3 4.5 1100 42 700 0.62 200 TO-263 IXTA3N120HV 3 4.5 1100 42 700 0.62 200 TO-263HV IXTT6N120 6 2.4 1950 56 850 0.42 300 TO-268 IXTH6N120 6 2.4 1950 56 850 0.42 300 TO-247

1200V Polar™ HiPerFET ™ Power MOSFETs Part Number V DSS I D25 R DS(on) C iss Q g t rr R thJC P D Package max. typ. typ. typ. max. Type T C =25 ° C T J =25 ° C V A W pF nC ns ° C/W W IXFH6N120P 1200 6 2.75 2830 92 300 0.5 250 TO-247 IXFA6N120P 6 2.75 2830 92 300 0.5 250 TO-263 IXFP6N120P 6 2.75 2830 92 300 0.5 250 TO-220 IXFR16N120P 9 1.04 6900 120 300 0.54 230 ISOPLUS247™ IXFH12N120P 12 1.35 5400 103 300 0.23 543 TO-247 IXFR20N120P 13 0.63 12900 193 300 0.43 290 ISOPLUS247™ IXFR26N120P 15 0.55 14000 225 300 0.39 320 ISOPLUS247™ IXFT16N120PHV 16 0.95 6900 120 300 0.19 660 TO-268HV IXFH16N120P 16 0.95 6900 120 300 0.19 660 TO-247 IXFT16N120P 16 0.95 6900 120 300 0.19 660 TO-268 IXFL30N120P 18 0.38 19000 310 300 0.35 357 ISOPLUS i5- Pak™ IXFX20N120P 20 0.57 11100 193 300 0.16 780 PLUS247 IXFN20N120P 20 0.57 11100 193 300 0.21 595 SOT-227 IXFK20N120P 20 0.57 11100 193 300 0.16 780 TO-264 IXFN26N120P 23 0.5 14000 255 300 0.18 695 SOT-227 IXFL32N120P 24 0.34 21000 360 300 0.24 520 ISOPLUS i5- Pak™ IXFK26N120P 26 0.5 14000 255 300 0.13 960 TO-264 IXFX26N120P 26 0.5 14000 255 300 0.13 960 PLUS247 IXFB30N120P 30 0.35 22500 310 300 0.1 1250 PLUS264 IXFN30N120P 30 0.35 19000 310 300 0.14 890 SOT-227 IXFN32N120P 32 0.31 21000 360 300 0.125 1000 SOT-227

II. Standard Power MOSFETs (1500V-4700V)  Voltages: 1500V, 2500V, 3000V, 4500V, 4700V  Current ratings: 1.83A – 20A FEATURES  High blocking voltage  Proprietary high-voltage packages  Up to 4500V electrical isolation (DCB)  UL 94 V-0 Flammability qualified (molding expoxies) APPLICATIONS  Capacitor discharge circuits  Pulse circuits  Laser and X-ray generation systems  AC switches  Energy tapping applications from the power grid 6

1500V Standard Power MOSFETs Part Number V DSS I D25 R DS(on) C iss Q g t rr R thJC P D Package max. typ. typ. typ. max. Type T C =25 ° C T J =25 ° C V A W pF nC ns ° C/W W IXTQ3N150M 1500 1.83 7.3 1375 38.6 900 1.7 73 TO-3P (overmolded) IXTH2N150 2 9.2 830 28 377 0.73 170 TO-247 IXTJ3N150 2.3 8 1375 38.6 900 1.13 110 ISO TO- 247™ IXTJ4N150 2.5 6 1576 44.5 900 1.13 110 ISO TO- 247™ IXTA3N150HV 3 7.3 1375 38.6 900 0.5 250 TO-263 IXTH3N150 3 7.3 1375 38.6 900 0.5 250 TO-247 IXTJ6N150 3 3.85 2230 67 1500 1 125 ISO TO- 247™ IXTT4N150HV 4 6 1576 44.5 900 0.45 280 TO-268HV IXTA4N150HV 4 6 1576 44.5 900 0.45 280 TO-263 IXTH4N150 4 6 1576 44.5 900 0.45 280 TO-247 IXTH6N150 6 3.5 2230 67 1500 0.23 540 TO-247 IXTT6N150 6 3.5 2230 67 1500 0.23 540 TO-268 IXTH12N150 12 2.2 3720 106 1200 0.14 890 TO-247 IXTT12N150HV 12 2.2 3720 106 1200 0.14 890 TO-268HV IXTT12N150 12 2.2 3720 106 1200 0.14 890 TO-268 IXTK20N150 20 1 7800 215 1100 0.1 1250 TO-264 IXTX20N150 20 1 7800 215 1100 0.1 1250 PLUS247

2000V-2500V Standard Power MOSFETs Part Number V DSS I D25 R DS(on) C iss Q g t rr R thJC P D Package max. typ. typ. typ. max. Type T C =25 ° C T J =25 ° C V A W pF nC ns ° C/W W IXTA1N200P3HV 2000 1 40 646 23.5 2300 1 125 TO-263HV IXTH1N200P3 1 40 646 23.5 2300 1 125 TO-247 IXTH1N200P3HV 1 40 646 23.5 2300 1 125 TO-247HV IXTH3N200P3HV 3 5 1860 70 420 0.24 520 TO-247HV IXTT3N200P3HV 3 8 1860 70 420 0.24 520 TO-268-HV IXTF6N200P3 4 4.2 3700 143 520 0.58 215 ISOPLUS i4- Pak™ IXTX6N200P3HV 6 4 3700 143 520 0.13 960 TO-247PLUS-HV IXTH06N220P3HV 2200 0.6 80 290 10.4 1100 1.2 104 TO-247HV IXTH1R8N220P3HV 1.8 21.5 965 31 1300 0.64 194 TO-247HV IXTA02N250HV 2500 0.2 450 116 7.4 1500 1.5 83 TO-263AB IXTH02N250 0.2 450 116 7.4 1500 1.5 83 TO-247 IXTH05N250P3HV 0.5 110 303 10.5 1200 1.2 104 TO-247HV IXTF1N250 1 40 1660 41 2500 1.13 110 ISOPLUS i4- Pak™ IXTH1R4N250P3 1.4 28 960 33 1800 0.64 195 TO-247 1.5 40 1660 41 2500 0.5 250 TO-247 IXTH1N250 1.5 40 1660 41 2500 0.5 250 TO-268HV IXTT1N250HV 5 8.8 8560 200 1200 0.13 960 TO-264 IXTK5N250 5 8.8 8560 200 1200 0.18 700 SOT-227 IXTN5N250 IXTX5N250 5 8.8 8560 200 1200 0.13 960 PLUS247

3000V-4700V Standard Power MOSFETs Part Number V DSS I D25 R DS(on) C iss Q g t rr R thJC P D Package max. typ. typ. typ. max. Type T C =25 ° C T J =25 ° C V A W pF nC ns ° C/W W IXTH04N300P3HV 3000 0.4 190 283 13 1100 1.2 104 TO-247HV IXTH1N300P3HV 1 50 895 30.6 1800 0.64 195 TO-247HV IXTT1N300P3HV 1 50 895 30.6 1800 0.64 195 TO-268HV IXTF2N300PHV 1.6 21 1890 73 400 0.77 160 ISOPLUS i4- PaK™ IXTT2N300P3HV 2 21 1890 73 400 0.24 520 TO-268HV IXTH2N300P3HV 2 21 1890 73 400 0.24 520 TO-247HV IXTX4N300P3HV 4 12.5 3680 139 420 0.13 960 TO-247PLUS-HV IXTH02N450HV 4500 0.2 625 246 10.6 1600 1.1 113 TO-247HV IXTF02N450 0.2 625 246 10.6 1600 1.6 78 ISOPLUS i4- Pak™ IXTT02N450HV 0.2 625 246 10.6 1600 1.1 113 TO-268HV IXTF1N450 0.9 80 1700 46 1750 0.77 165 ISOPLUS i4- Pak™ IXTH1N450HV 1 80 1700 46 1750 0.24 520 TO-247 IXTT1N450HV 1 80 1700 46 1750 0.24 520 TO-268HV IXTX1R4N450HV 1.4 40 3300 88 660 0.13 960 TO-247PLUS-HV IXTF1R4N450 1.4 40 3300 88 660 0.65 190 ISOPLUS i4- PAK™ IXTL2N450 2 20 6860 180 1750 0.56 220 ISOPLUS i5- Pak™ IXTL2N470 4700 2 20 6860 180 1750 0.56 220 ISOPLUS i5- Pak™

Normenclature IX T H 02 N 450 HV High voltage package IXYS Voltage rating, 4500V N-channel MOSFET Current rating, 0.2A Package type, TO-247 Standard MOSFET 10

III. High Voltage Packages Proprietary high-voltage versions of international standard size packages BENEFITs:  TO-263HV  Elimination of multiple series-connected lower-voltage devices, simplifying and reducing gate drive circuitry  TO-268HV  Arc prevention  Higher efficiency  TO-247-3L-HV  TO-247PLUS-3L-HV  TO-247-4L APPLICATIONS:  High voltage power supplies  i4-Pak (non-isolated)  Defibrillators  Industrial instrumentation  CT and MRI scanners  X-ray machines  Ultrasound machines  Capacitor discharge applications

TO-263HV 2 leads. 2 times greater creepage distance (4.20mm), compared to TO-263 Creepage:  Lead to lead (surface): 4.20mm (min)  Lead to heatsink (surface): 4.50mm (min) Clearance:  Lead to lead: 4.15mm (min) Part Numbers: IXFA20N85XHV (MOSFET) IXYA20N120C3HV (IGBT) IXBA14N300HV (BiMOSFET ™) “ A ” denotes TO -263 “ HV ” denotes high -voltage package

TO-268HV 2 leads. 2 times greater creepage distance (9.50mm), compared to TO-268 Creepage:  Lead to lead (surface): 9.50mm (min)  Lead to heatsink (surface): 5.40mm (min) Clearance:  Lead to lead: 9.45mm (min) Part Numbers: IXFT60N65X2HV (MOSFET) IXYT30N65C3H1HV (IGBT) IXBT42N300HV (BiMOSFET ™) “ T ” denotes TO -268 “ HV ” denotes high -voltage package

TO-247-3L-HV 3 leads Creepage:  Lead to lead (surface): 8.91mm  Lead to heatsink (surface): 7.92mm Clearance:  Lead to lead: 5.92mm Part Numbers: IXTH1N450HV (MOSFET) IXYH30N450HV (IGBT) IXBH22N300HV (BiMOSFET ™) IXHH40N150HV (MGT) “ H ” denotes TO -247 “ HV ” denotes high -voltage package