IXYS 2008 Product Marketing IXYS July 2017 www.ixys.com 1 - - PowerPoint PPT Presentation

ixys
SMART_READER_LITE
LIVE PREVIEW

IXYS 2008 Product Marketing IXYS July 2017 www.ixys.com 1 - - PowerPoint PPT Presentation

250V Ultra Junction X3- Class HiPerFET Power MOSFETs IXYS Corporation IXYS 2008 Product Marketing IXYS July 2017 www.ixys.com 1 Product Line Introduction Offering best-in-class on-state resistance and gate charge Figure of Merit


slide-1
SLIDE 1

1

IXYS

2008 Product Marketing IXYS

250V Ultra Junction X3-Class HiPerFET™ Power MOSFETs

IXYS Corporation www.ixys.com

July 2017

slide-2
SLIDE 2

2

  • Developed using a charge compensation principle and proprietary process technology
  • Best-in-class Figure of Merit (on-state resistance times gate charge)
  • Optimized fast, soft-recovery body diodes
  • dv/dt ruggedness
  • Superior avalanche capability
  • Higher efficiency
  • High power densities
  • Easy to design in
  • Available in international standard packages: TO-3P, TO-220 (overmolded or standard), TO-

247, PLUS247, TO-252, TO-263, TO-264, TO-268HV, SOT-227

Product Line Introduction

Offering best-in-class on-state resistance and gate charge Figure of Merit

slide-3
SLIDE 3

Key Technology Advantages

3

Ultra Junction Technology (combination of charge compensation principle and IXYS process technology)

  • Best-in-class Figure of Merit (RDS(on) x Qg)
  • Low conduction and switching losses
  • Lowest on-state resistances in industry (5mΩ in TO-264, 4.5mΩ in SOT-227)

Fast soft-recovery body diode

  • Minimizes voltage overshoots and electromagnetic interference (EMI)
  • Able to achieve high efficiency and avoid device failure by removing all the

leftover energies during high-speed switching Enhanced ruggedness

  • Superior avalanche capability
  • dv/dt ruggedness
  • Robust against device failure induced by voltage transients and accidental

turn-on of parasitic bipolar transistors

slide-4
SLIDE 4

4

Available Parts

Part Number VDSS (V) ID25 (A) RDS(on) max. (mΩ) Qg(on) typ. (nC) trr typ. (ns) RthJC max. (°C/W) Package type IXFA30N25X3 250 30 60 21 72 0.71 TO-263 IXFP30N25X3 30 60 21 72 0.71 TO-220 IXFP30N25X3M 30 60 21 72 3.5 OVERMOLDED TO-220 IXFY30N25X3 30 60 21 72 0.71 TO-252 IXFA60N25X3 60 23 50 84 0.39 TO-263 IXFP60N25X3 60 23 50 84 0.39 TO-220 IXFP60N25X3M 60 23 50 84 3.5 OVERMOLDED TO-220 IXFQ60N25X3 60 23 50 84 0.39 TO-3P IXFA80N25X3 80 16 83 105 0.32 TO-263 IXFH80N25X3 80 16 83 105 0.32 TO-247 IXFP80N25X3 80 16 83 105 0.32 TO-220 IXFQ80N25X3 80 16 83 105 0.32 TO-3P IXFH120N25X3 120 12 122 116 0.24 TO-247 IXFQ120N25X3 120 12 122 116 0.24 TO-3P IXFT120N25X3HV 120 12 122 116 0.24 TO-268HV IXFH150N25X3 150 9 154 134 0.16 TO-247 IXFT150N25X3HV 150 9 154 134 0.16 TO-268HV IXFH170N25X3 170 7.4 190 135 0.13 TO-247 IXFK170N25X3 170 7.4 190 135 0.13 TO-264 IXFN170N25X3 170 7.4 190 135 0.32 SOT-227 IXFT170N25X3HV 170 7.4 190 135 0.13 TO-268HV IXFK240N25X3 240 5 345 165 0.1 TO-264 IXFX240N25X3 240 5 345 165 0.1 PLUS247 IXFN240N25X3 240 4.5 345 165 0.18 SOT-227

slide-5
SLIDE 5

Applications

5

Flyback converter for telecom power supplies Synchronous rectification in a buck converter Half-bridge Class-D audio amplifier

slide-6
SLIDE 6

6

Easily found on www.ixys.com

Power Devices -> DISCRETE MOSFETs -> N-Channel: Ultra Junction X-Class Power MOSFETs -> 250V X3-Class HiPerFET™ MOSFETs

slide-7
SLIDE 7

Normenclature

7

IX F N 240 N 25 X3

3rd Generation Ultra Junction Technology Voltage rating, 250V N-channel MOSFET Current rating, 240A Package type, SOT-227 HiPerFET™ MOSFET IXYS

slide-8
SLIDE 8

The World OF IXYS

Industry Mind Share Strong Product Promotion and Focus Joint Strategic and Marketing Programs Broad Technologies with Strong Power Solutions Great Partner for Demand Creation Creating New Products For Today and Tomorrow’s Needs IXYS POWER, IC, and Microcontroller Solutions

8