IXYS 2008 Product Marketing IXYS September 2016 www.ixys.com 1 - - PowerPoint PPT Presentation

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IXYS

2008 Product Marketing IXYS

850V Ultra Junction X-Class HiPerFET™ Power MOSFETs with Fast Body Diodes

IXYS Corporation www.ixys.com

September 2016

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• Developed using a charge compensation principle and proprietary process technology
• Lowest on-resistance RDS(on) in industry: (33mΩ in SOT-227, 41mΩ in PLUS264 & SOT-227)
• Low gate charge Qg
• Optimized fast, soft-recovery body diodes
• Superior dv/dt ruggedness
• Higher efficiency
• High power densities
• Easy to mount
• Low package inductance
• Available in international standard packages: TO-220, TO-263HV, SOT-227, TO-247, TO-264,

PLUS264™, TO-268HV)

Product Line Introduction

Industry’s lowest on-resistance Silicon devices

Key Technology Advantages

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Ultra Junction Technology (combination of charge compensation principle and IXYS process technology)

• Better Figure of Merit (RDS(on) x Qg)
• Significantly reduced on-resistance and gate charge
• Very high power density
• Low conduction and switching losses
• Low gate drive requirements
• Enhanced Ruggedness
• Superior dv/dt performance (50V/ns)
• Avalanche capability
• Robust against device failure induced by voltage transients and accidental turn-on of parasitic

bipolar transistors

• Optimized Fast, Soft-Recovery Body Diode
• Minimizes electromagnetic interference (EMI)
• Able to achieve high efficiency and avoid device failure by removing all the energies

during high-speed switching

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Available Parts

850V Ultra Junction X-Class HiPerFET™ MOSFETs with Fast Body Diodes!

Applications

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Enabling very high power density!

• Industrial switched-mode and resonant-mode power supplies
• Electric vehicle battery chargers
• AC and DC motor drives
• DC-DC converters
• Renewable energy inverters
• Power Factor Correction (PFC) circuits
• Robotics and servo control

Single transistor forward converter Flyback converter Solar inverter

Competitive Landscape

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The IXYS part IXFP20N85X achieves:

• Lower (better) Figure of Merit (RDS(on) x Qg)
• Far superior reverse-diode dv/dt ruggedness at 50V/ns
• Greater avalanche capability (EAS)

IXYS’ 850V Ultra Junction MOSFETs can be better replacements for the conventional 800V and 900V MOSFETs available on the market nowadays.

The World OF IXYS

Industry Mind Share Strong Product Promotion and Focus Joint Strategic and Marketing Programs Broad Technologies with Strong Power Solutions Great Partner for Demand Creation Creating New Products For Today and Tomorrow’s Needs IXYS POWER, IC, and Microcontroller Solutions

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