TG‐2 Overview • Purifica1on of enriched Ge • Crystal growing at IKZ • BEGe effort (see talks by Stefan, Dusan) • SiPM Lar readout (J. Janicsko)
PPM – 1me schedule defined for purifica1on of enr Ge ! ! Zeitplan MPI München - Umarbeitung enriched GeO 2 in Ge poly > 50 ! cm Reduktion: Start jeweils gegen 10 Uhr mit 5,6 kg GeO 2 , Dauer 44 h Have offer from PPM: final issue 1 09.03.10 2 15.03.10 regarding insurance s1ll being 3 17.03.10 clarified 4 22.03.10 5 24.03.10 6 29.03.10 Have offer from Weltkulturerbe 7 06.04.10 8 12.04.10 Rammelsberg for storage of 9 14.04.10 material underground. 10 19.04.10 Zonenreinigung: ca. 8 kg Ge, Dauer 24 h Josef Janicsko will handle all Erster Durchgang jeweils mit 2 Reduktionschargen, transports/bookkeeping. On‐site weitere Durchgänge nach Bedarf at PPM. Abschluss der Arbeiten spätestens 30.04.10
IKZ • since last mee1ng, two new xtals grown in mini‐CZ puller (converted float‐zone puller). Total now 17 xtals pulled. Ø 49.7
Electrical characterization of the Ge crystal Ge-HP-17 (miniCZ-3) CZ17 Starting material Susceptor Crucible Atmosphere PPM ( 76 Ge-depleted Ge) Furnace TCM (Ta suprasil Ar 6.0 + FZ-1605 1.312 kg alloyed Mo) 2nd experiment 4% H 2 6.0 Conductivity and Hall effect results: Resistvity carrier concentration Mobility (cm -3 ) (cm 2 /Vs) ( Ω Ω cm) Ω Ω Temperature RT 77 K RT 77 K RT 77 K -9.5 × 10 13 × 10 12 CZ17_B 56 77 1170 41100 +2.0 × × × -7.8 × 10 13 × 10 11 CZ17_D2 52 754 1540 43400 +1.9 × × × CZ17_F1-2-3 52-56 -- -7.6-8.3 -- 1430- -- × 10 13 inhomogeneous: 1570 77-K measurements impossible!! An additional set of samples will be prepared from the crystal between the D and E positions. Results are expected in January.
CZ17 - PTIS Energy (meV) 6 8 10 12 14 16 18 1.0 P PTIS signal (normalized) 0.5 As 0.0 Al -0.5 CZ17_A at 7 K CZ17_A at 7 K + light -1.0 -1.5 40 60 80 100 120 140 160 Energy (cm -1 ) Energy (meV) 6 8 10 12 14 16 18 1.0 P PTIS signal (normalized) 0.5 As 0.0 Al -0.5 -1.0 CZ17_C2 at 7 K CZ17_C2 at 7 K + light -1.5 40 60 80 100 120 140 160 Energy (cm -1 ) Impurities Aluminum dominates over the sum of phosphorus and arsenic. This is consistent with the p-type conductivity observed in the neighboring samples B and D2. The arsenic concentration is only 10...15% of that of phosphorus. Whether we have really a reduction of the impurities in the crystal going from A to C, as indicated by the Hall measurements, cannot be answered firmly. A change of the compensation ratio is also possible. IKZ / QG Charakterisierung - 2/3 - 21.12.2009 Irmscher / Pietsch
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• Next steps at IKZ: – New crystal from rebuilt CZ puller (electropolished) expected this week – New crystal from new modified float‐zone puller (only used for ultra‐high purity, no doping) also expected this week – Results within 1 week ??
• Beyond the diodes: • Electronics • Cabling • Lock requirements • DAQ requirements • MC simula1ons • We need to be ac1ve on developing these items for Phase II as we start up Phase I
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