TCAD Simulation for HV-CMOS Matthew Buckland Overview Aim: - - PowerPoint PPT Presentation

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tcad simulation for hv cmos
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TCAD Simulation for HV-CMOS Matthew Buckland Overview Aim: - - PowerPoint PPT Presentation

Dec 03, 2022 428 likes •516 views

TCAD Simulation for HV-CMOS Matthew Buckland Overview Aim: simulate depletion region of HV-CMOS sensor p-substrate with a deep n-well NMOS and PMOS are implanted into this well High voltage to create large depletion Simulation

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TCAD Simulation for HV-CMOS

Matthew Buckland

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Overview

  • Aim: simulate depletion region of HV-CMOS sensor
  • p-substrate with a deep n-well
  • NMOS and PMOS are implanted

into this well

  • High voltage to create large depletion
  • Simulation only has the bias ring,

a deep n-well and one pixel

http://sus.ziti.uni-heidelberg.de/Forschung/FGDetektoren/SDA/SDA.png

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Properties of the Simple Pixel

  • p-doped Si bulk, resistivity 100 Ωcm
  • Width: 25 μm, thickness: 100 μm
  • Bias ring p-dose: 1x1016 cm-3, pixel n-dose: 1x1016 cm-3
  • p-implant is 2 μm wide and n-implant is 10 μm wide
  • Oxide layer is 0.1 μm thick, aluminium is 1 μm thick
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Depletion Region for the Simple Pixel

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Electron Density of the Simple Pixel

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Depletion Area for the Simple pixel

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Further Work

  • Extend the current simulation to 3D
  • Produce a simulation of the complete HV-CMOS structure both in 2D

and 3D