TCAD Simulation for HV-CMOS Matthew Buckland Overview Aim: - PowerPoint PPT Presentation

Dec 03, 2022 •428 likes •513 views

TCAD Simulation for HV-CMOS Matthew Buckland Overview Aim: simulate depletion region of HV-CMOS sensor p-substrate with a deep n-well NMOS and PMOS are implanted into this well High voltage to create large depletion Simulation

TCAD Simulation for HV-CMOS Matthew Buckland
Overview ● Aim: simulate depletion region of HV-CMOS sensor ● p-substrate with a deep n-well ● NMOS and PMOS are implanted into this well ● High voltage to create large depletion ● Simulation only has the bias ring, a deep n-well and one pixel 2 http://sus.ziti.uni-heidelberg.de/Forschung/FGDetektoren/SDA/SDA.png
Properties of the Simple Pixel ● p-doped Si bulk, resistivity 100 Ωcm ● Width: 25 μm, thickness: 100 μm ● Bias ring p-dose: 1x10 16 cm -3 , pixel n-dose: 1x10 16 cm -3 ● p-implant is 2 μm wide and n-implant is 10 μm wide ● Oxide layer is 0.1 μm thick, aluminium is 1 μm thick 3
Depletion Region for the Simple Pixel 4
Electron Density of the Simple Pixel 5
Depletion Area for the Simple pixel 6
Further Work ● Extend the current simulation to 3D ● Produce a simulation of the complete HV-CMOS structure both in 2D and 3D 7

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