Trap Models for TCAD at Trap Models for TCAD at CNM & USe & - - PowerPoint PPT Presentation

F.R.Palomo Device Simulation Meeting 1/7 CERN– 29th September 2014 https://indico.cern.ch/event/339948/

https://indico.cern.ch/event/339943/

Trap Models for TCAD at CNM & USe & IFCA Trap Models for TCAD at CNM & USe & IFCA

F.R. Palomo1, S. Hidalgo2, P.Fernández2, M.Baselga2 , I. Vila3, rogelio@zipi.us.es salvador.hidalgo@csic.es ivan.vila@csic.es

1Departamento Ingeniería Electrónica, Escuela Superior de Ingenieros

Universidad de Sevilla, Spain

2Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica,

Barcelona, Spain

3Instituto de Física de Cantabria, Santander, Spain

F.R.Palomo Device Simulation Meeting 2/7 CERN– 29th September 2014 https://indico.cern.ch/event/339948/

https://indico.cern.ch/event/339943/

Outline

• Trap models in Sentaurus TCAD
• Tuning Parameters
• Models we use

Trap Models

• No intention to put the whole trap taxonomy we find in experiments
• TCAD would be unable to converge
• Effective trap models
• No more than 4 trap models [1]
• 5 parameters per model (type, energy, σe, σh, concentration)
• There is no “model that fits for all”
• The models have to be checked with experimental data
• Effective models fitted for each situation, limited predictive power
• Model Box approach, we take the better for data fitting

Numerical simulation of radiation damage effects in p-type and n-type FZ silicon detectors, F.Moscatelli et al. NIMB 186(1-4), 2002, pp171-175

F.R.Palomo Device Simulation Meeting 3/7 CERN– 29th September 2014 https://indico.cern.ch/event/339948/

https://indico.cern.ch/event/339943/

Perugia Model (Petasecca et al.)

n-type silicon Perugia model p-type silicon Perugia model Numerical simulation of radiation damage effects in p-type and n-type FZ silicon detectors, M.Petasecca et al. IEEE TNS 53(5), 2006 pp2971-2976 Numerical simulation of radiation damage effects in p-type silicon detectors, NIMA 563 (1), 2006, pp192-195

Good simulation of leakage currents for diodes (n+/p/p+ p-type silicon)

F.R.Palomo Device Simulation Meeting 4/7 CERN– 29th September 2014 https://indico.cern.ch/event/339948/

https://indico.cern.ch/event/339943/

Pennicard Model (CNM-Glasgow)

p-type silicon Perugia model p-type silicon Pennicard model (adapt from Perugia model) Simulations of radiation-damaged 3D detectors for the Super-LHC, D.Pennicard et al. NIMA 592(1-2), 2008, pp16-25

1016 neq/cm2

Comparison between simulated and experimental CCE in a “3 column” ATLAS detector. Simulated “3 column” ATLAS detector Reason: Perugia free trapping not enough, correct leakage current (or effective dopping) so new σc, σh are defined.

F.R.Palomo Device Simulation Meeting 5/7 CERN– 29th September 2014 https://indico.cern.ch/event/339948/

https://indico.cern.ch/event/339943/

MOS Capacitors (Pennicard model)

Analysis of Displacement damage effects on MOS capacitors, P.Fernández-Martínez, F.R.Palomo et al. NIMA 730, 2013, pp91-94 For simple MOS capacitors, the donor trap type is the most important. General rule: tune your trap models to reproduce the data

p-MOS Capacitor proton irradiation (PS@CERN)

F.R.Palomo Device Simulation Meeting 6/7 CERN– 29th September 2014 https://indico.cern.ch/event/339948/

https://indico.cern.ch/event/339943/

Our future radiation damage simulations

• Working in radiation damage of 3D

detectors with our trap models (Pennicard)

• But we are open to other models

considering CMS interests

F.R.Palomo Device Simulation Meeting 7/7 CERN– 29th September 2014 https://indico.cern.ch/event/339948/

https://indico.cern.ch/event/339943/

Thanks for your attention

rogelio@zipi.us.es salvador.hidalgo@csic.es ivan.vila@csic.es