TCAD World Leader Advanced solutions for all technologies World - - PowerPoint PPT Presentation

TCAD World Leader

TCAD World Leader

Advanced solutions for all technologies World leading next generation TCAD products including VWF – Statistical

Process Control, and VICTORY – 3D process, device and stress simulation

Legacy TMA and ISE TCAD tool compatibility TCAD simulation and calibration services Large worldwide customer base Outstanding long-term development and support teams Excellent, timely, worldwide local support and training Advanced licensing and value pricing

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TCAD World Leader

Founded in 1984 by Dr. Ivan Pesic Headquarters in Silicon Valley, California Development offices in USA and UK Local support from 11 offices worldwide Profitable since inception and debt free Active programs with leading foundries, EDA vendors, universities and

government agencies

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TCAD World Leader

VICTORY PROCESS, VICTORY CELL, and VICTORY STRESS are general purpose 3D simulators that include 3D Monte Carlo Implant, 3D Diffusion, 3D Oxidation, 3D Physical Etch / Deposit, and 3D Stress Analysis.

3D Deep Submicron Process Simulation

Sophisticated multi-particle and flux models for physical deposition and etching with

substrate material re-deposition

Physical oxidation simulation with stress analysis Extremely accurate and fast Monte Carlo implant simulation Comprehensive set of 3D diffusion models: Fermi, three-stream, and five-stream Photo-lithography Seamless link to 3D device simulators including structure mirroring, adaptive doping

refinement and electrode specification

Generic 3D anisotropic stress simulation for crystalline silicon, SiGe and SiC

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TCAD World Leader

VICTORY DEVICE and Device3D are general purpose 3D device simulators that perform DC, AC and transient analysis for silicon-based semiconductor devices, binary, ternary, quaternary and organic material-based devices.

• 3D Deep Submicron Device Simulation

Quantum tunneling and quantum correction MixedMode – co-simulation of circuit and device elements Self heating and energy balance Stress-dependent device models

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TCAD World Leader

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3D Physical Ion Milling Etching 3D Geometrical Etching

3D process simulation - etching and deposition

3D Ion beam deposition with tilted beam

TCAD World Leader

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Transient Enhanced Diffusion 3D Trench Oxidation

3D process simulation - oxidation and diffusion

TCAD World Leader

Trench implant at tilt 50 degrees and twist along structure’s diagonal.

Primary, i.e. direct impact implantation Shadowed, i.e. secondary impact implantation

3D process simulation - Monte Carlo implantation

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TCAD World Leader

Selective CMP Structure mirroring

3D process simulation - CMP and mirroring capability

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TCAD World Leader

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VICTORY PROCESS is used to simulate

all steps of a FinFET process

The flow includes ~20 etch/depo steps, 3

Monte Carlo ion implantation steps, 4

• xidation and diffusion steps

The volume grid structure had ~800,000

mesh points

Simulation time on 8 CPU computer is less

than 2 hours

Full flow 3D process simulation - 28nm FinFET

28nm FinFET

TCAD World Leader

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Electrons concentration in a 3-gate MOS capacitor calculated using 2D Poisson-Schroedinger equation. Electron concentration isosurface inside the silicon Fin of a FinFET.

3D device simulation - quantum

TCAD World Leader

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3D stress simulation - 28nm FinFET

FinFET structure. The Si3N4 layer is shown as transparent in order to display the silicon fin and polysilicon gate underneath. The XX strain in a cut-plane along the center

• f the device.

The IV curves for the FinFET simulated with and without strain effects.

TCAD World Leader

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Layout dependent 3D stress simulation of a Test Element Group (TEG)

3D TEG structure for stress distribution simulation. 2D cross-section showing mobility enhancement.

TCAD World Leader

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Geometry effects on mobility enhancement for (100) FinFET.

3D stress simulation – design of experiments

TCAD World Leader

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Calculated stress fields in the XX and YY directions resulting from the buried SiGe quantum dot.

2D stress simulation in SiGe - Germanium impurity induced stress

TCAD World Leader

DC, transient, AC, spectral, and spatial response analysis for optical devices can be simulated. Models are included for absorption and photogeneration with mono-chromatic, and multi-spectral sources in arbitrary 3D topologies.

• 3D Optical Device Simulation

Transfer Matrix Method (TMM) Beam Propagation Method (BPM) Finite Difference Time Domain (FDTD) Circular, elliptical, and user-defined optical sources Anti-Reflective coating Built-in and user defined optical index of refraction Lenslets

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TCAD World Leader

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Efficiency versus number of cells. There is a tradeoff between area loss and sheet resistance leading to a bell shape curve. CIGS IV curves versus number of cells

CIGS Module including 4 Cells

Solar Cell Simulation - CIGS

TCAD World Leader

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3D Silicon nanowire solar cell External Quantum Efficiency of a GaInP/GaAs/Ge triple junction solar cell Third generation solar cell: Localized surface plasmons Dye-sensitized solar cell

Solar Cell Simulation

TCAD World Leader

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CMOS Image Sensor Simulation

CIS Intensity plot (FDTD) CIS crosstalk versus angle of incidence

3D CIS process simulation

2D CIS including back end process simulation

TCAD World Leader

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Electron and hole populations across the triple well LED. Sapphire substrate GaN LED Emitted light intensity versus angle. Triple well LED GaN LED on sapphire substrate

LED Simulation

TCAD World Leader

3D power device simulation for DC, AC, transient analysis incorporates the effects of self-heating, and includes models for heat sources, heat sinks, heat capacity and thermal conduction.

• 3D Power Device Simulation

128-bit or 256-bit extended precision for wide band-gap semiconductors Self-heating effects MixedMode - co-simulation of circuit and device elements Curvetrace algorithm Traps, interface traps, and defects Spontaneous and piezoelectric polarization, and phonon-assisted tunneling

models (GaN)

Parabolic field emission and anisotropic impact ionization models (SiC)

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TCAD World Leader

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Quadruple precision (128-bit) simulation for SiC pin Diode

4H-SiC 1e15cm-3 Anode Cathode 1e19cm-3

SIC Diode Simulation

TCAD World Leader

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Electric field distribution with 80 volts applied to the drain. Impact ionization rate distribution at 80 volts drain voltage.

3D Buffered Super Junction LDMOS Simulation

TCAD World Leader

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Non-ideal GaN FET breakdown characteristics (150V) using standard gate field plate design. GaN FET on Sapphire Substrate GaN FET on SiC Substrate

GaN FET Simulation

TCAD World Leader

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IGBT Simulation

Switching circuit Gateway driven MixedMode simulation for fall-time measurement.a

TCAD World Leader

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Switching curves of IGBT planar type (Red) and IGBT trench type (Green) at 125.

IGBT Simulation

TCAD World Leader

Organic Devices such as TFTs, LEDs, and Solar cells are simulated for electrical and optical behavior in steady-state and transient mode.

Organic Device Simulation

Defect Density of States Hopping and Poole-Frenkel Mobility Models Langevin recombination Singlet, triplet, and dopant exciton densities Photon/Exciton generation rate equation Anti-Reflective coatings Output coupling and optical emission characteristics

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TCAD World Leader

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Korster, L.J.A., Smits, E.C.P., Mihailetchi, V.D., and Blom, P.W.M. "Device model for the operation of polymer/fullerene bulk heterojunction solar cell", Physical Review B, Vol. 72, (2005) pp. 085205-1, 085205-9.

Organic Solar Cell Simulation

TCAD World Leader

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a-Si:TFT + OLED potential distribution OLED current and light power

3 a-Si TFT + OLED Pixel Design Simulation

TCAD World Leader

Photonic crystal

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Conventional OLED

TE mode TM mode

Photonic crystal optical output coupling

OLED Simulation

TCAD World Leader

All compound material variations of IV-IV, III-V, II-VI 3D devices can be simulated in DC, AC, and transient.

3D Compound Device Simulation

Material parameters for GaN, SiC, SiGe, GaAs, AlGaAs, InGaAsP, etc. Abrupt and graded heterojunctions Composition dependent models Energy balance Self-heating effects High frequency and noise analysis Interface and bulk traps Quantum mechanical simulation Spontaneous and piezoelectric polarization, and phonon-assisted tunneling models

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TCAD World Leader

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MESFET PHEMT HBT

2D and 3D device simulation of various compound devices

3D SiGe HBT

TCAD World Leader

We also develop simulation solutions for custom and niche markets including:

SONOS / SANOS / TANOS etc. MEMs Magnetic Devices Phase Change Memory (PCM)

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TCAD World Leader

Non-local Direct tunneling through the tunnel layer Non-local Direct tunneling through the barrier layer HEI, HHI and CONCANNON hot carrier injection Poole-Frenkel Detrapping

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Threshold voltage shift vs. programming time for different gate voltages. Threshold voltage shift vs. erasing time for a gate voltage of 16V.

SANOS Simulation

SANOS structure

TCAD World Leader

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MEMS Simulation

TCAD World Leader

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The collector currents in the magnetotransistor for an Applied field of 1.0 Tesla. The electron current along the horizontal cutline at 90 microns in the magnetotransistor. The current gains of the

• structure. One is enhanced

relative to the zero magnetic field case, and the

• ther is diminished.

NPN Magnetotransistor

TCAD World Leader

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Mobility change at 0ns, 50ns, 150ns and 200ns. (Top) Triangular voltage sweep

• applied. (Middle) A

temperature change at a point near the center of the device. (Bottom) Mobility change at that point. Simulated I-V hysteresis loop for

• ne cycle.

Phase Change Memory (PCM)

TCAD World Leader

VICTORY’s open architecture enables rapid development of new models both by Silvaco and by university professors or commercial companies. This co-development allows Silvaco to rapidly advance TCAD frontiers faster than ever before.

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Virtual Wafer Fab (VWF) allows a large number of simulations to be carried out automatically, in parallel, across your network in order to collect a large number of simulation data points to achieve process centering, device optimization, statistical correlation between process, device, parasitic, SPICE model parameters, and many other analysis tasks that were previously impossible.

TCAD World Leader

VICTORY Device

3D Device simulator

VICTORY Process

3D Process simulator

VICTORY Stress

3D Stress simulator

VICTORY Cell

3D Process simulator DONE ONGOING

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TCAD World Leader

SILVACO and TMA shared a common legacy from Stanford University ATHENA is T-Supreme4™ compatible ATLAS is MEDICI™ compatible Extensive Compatibility Features Allow:

Direct loading of TMA input deck syntax Conversion of ISE – DESSIS™ syntax to ATLAS syntax Support for the same physical models Use of the same legacy material parameters Direct loading of TMA TIF format structure files in ATLAS Sharing of users’ existing calibration coefficients

TMA and ISE Users can easily migrate to SILVACO software

T-Supreme4 MEDICI and DESSIS are trademarks of Synopsis Inc

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TCAD World Leader

TCAD services are provided to customers who have unique

semiconductor device modeling requirements but do not have the time or resources to operate TCAD software in-house.

Eliminates the requirement for expensive, full-time, in-house engineers for

intermittent TCAD needs

Provides instant access to highly qualified engineers who are experts in

semiconductor physics and TCAD software operation

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TCAD World Leader

Broad customer base ensures Silvaco’s R&D leadership, financial stability,

and continued growth

Commercial

Foundries Design houses Consultants

Government and military Universities and research institutions

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TCAD World Leader

Stable team of elite TCAD

developers concentrated in Santa Clara, California, and Cambridge, UK

Experienced application

engineers in all of our worldwide offices

Continuity – same team,

same management, same locations for over 20 years

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TCAD World Leader

Direct worldwide technical support available from our offices in:

USA:

California Arizona Texas Massachussetts

International:

UK Japan (Yokohama and Kyoto) Korea Taiwan Singapore

Support from distributors in Malaysia, China and India

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TCAD World Leader

Silvaco's tools support advanced and unique licensing models tailored for unique customer needs.

Advanced Licensing Options:

Company Worldwide Unlimited License Universal Token Token Card TCAD Omni

Traditional Licensing Options:

Term-Based Perpetual TCAD Academic Suite

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