TCAD World Leader
� � Advanced solutions for all technologies � � World leading next generation TCAD products including VWF – Statistical Process Control, and VICTORY – 3D process, device and stress simulation � � Legacy TMA and ISE TCAD tool compatibility � � TCAD simulation and calibration services � � Large worldwide customer base � � Outstanding long-term development and support teams � � Excellent, timely, worldwide local support and training � � Advanced licensing and value pricing - 3 - TCAD World Leader
� � Founded in 1984 by Dr. Ivan Pesic � � Headquarters in Silicon Valley, California � � Development offices in USA and UK � � Local support from 11 offices worldwide � � Profitable since inception and debt free � � Active programs with leading foundries, EDA vendors, universities and government agencies - 4 - TCAD World Leader
VICTORY PROCESS, VICTORY CELL, and VICTORY STRESS are general purpose 3D simulators that include 3D Monte Carlo Implant, 3D Diffusion, 3D Oxidation, 3D Physical Etch / Deposit, and 3D Stress Analysis. � � 3D Deep Submicron Process Simulation � � Sophisticated multi-particle and flux models for physical deposition and etching with substrate material re-deposition � � Physical oxidation simulation with stress analysis � � Extremely accurate and fast Monte Carlo implant simulation � � Comprehensive set of 3D diffusion models: Fermi, three-stream, and five-stream � � Photo-lithography � � Seamless link to 3D device simulators including structure mirroring, adaptive doping refinement and electrode specification � � Generic 3D anisotropic stress simulation for crystalline silicon, SiGe and SiC - 5 - TCAD World Leader
VICTORY DEVICE and Device3D are general purpose 3D device simulators that perform DC, AC and transient analysis for silicon-based semiconductor devices, binary, ternary, quaternary and organic material-based devices. � � 3D Deep Submicron Device Simulation � � Quantum tunneling and quantum correction � � MixedMode – co-simulation of circuit and device elements � � Self heating and energy balance � � Stress-dependent device models - 6 - TCAD World Leader
3D process simulation - etching and deposition 3D Physical Ion Milling Etching 3D Geometrical Etching 3D Ion beam deposition with tilted beam - 7 - TCAD World Leader
3D process simulation - oxidation and diffusion Transient Enhanced Diffusion 3D Trench Oxidation - 8 - TCAD World Leader
3D process simulation - Monte Carlo implantation Primary, i.e. direct impact implantation Shadowed, i.e. secondary impact implantation Trench implant at tilt 50 degrees and twist along structure’s diagonal. - 9 - TCAD World Leader
3D process simulation - CMP and mirroring capability Selective CMP Structure mirroring - 10 - TCAD World Leader
Full flow 3D process simulation - 28nm FinFET � � VICTORY PROCESS is used to simulate all steps of a FinFET process � � The flow includes ~20 etch/depo steps, 3 Monte Carlo ion implantation steps, 4 oxidation and diffusion steps � � The volume grid structure had ~800,000 mesh points � � Simulation time on 8 CPU computer is less than 2 hours 28nm FinFET - 11 - TCAD World Leader
3D device simulation - quantum Electrons concentration in a 3-gate Electron concentration isosurface MOS capacitor calculated using 2D inside the silicon Fin of a FinFET. Poisson-Schroedinger equation. - 12 - TCAD World Leader
3D stress simulation - 28nm FinFET The XX strain in a cut-plane along the center of the device. FinFET structure. The Si3N4 layer is shown as transparent in order to display the silicon fin and polysilicon The IV curves for the FinFET simulated gate underneath. with and without strain effects. - 13 - TCAD World Leader
Layout dependent 3D stress simulation of a Test Element Group (TEG) 3D TEG structure for stress 2D cross-section showing distribution simulation. mobility enhancement. - 14 - TCAD World Leader
3D stress simulation – design of experiments Geometry effects on mobility enhancement for (100) FinFET. - 15 - TCAD World Leader
2D stress simulation in SiGe - Germanium impurity induced stress Calculated stress fields in the XX and YY directions resulting from the buried SiGe quantum dot. - 16 - TCAD World Leader
DC, transient, AC, spectral, and spatial response analysis for optical devices can be simulated. Models are included for absorption and photogeneration with mono-chromatic, and multi-spectral sources in arbitrary 3D topologies. � � 3D Optical Device Simulation � � Transfer Matrix Method (TMM) � � Beam Propagation Method (BPM) � � Finite Difference Time Domain (FDTD) � � Circular, elliptical, and user-defined optical sources � � Anti-Reflective coating � � Built-in and user defined optical index of refraction � � Lenslets - 17 - TCAD World Leader
Solar Cell Simulation - CIGS CIGS IV curves versus number of cells CIGS Module including 4 Cells Efficiency versus number of cells. There is a tradeoff between area loss and sheet resistance leading to a bell shape curve. - 18 - TCAD World Leader
Solar Cell Simulation Third generation solar cell: Localized surface plasmons Dye-sensitized solar cell External Quantum Efficiency of a GaInP/GaAs/Ge triple 3D Silicon nanowire junction solar cell solar cell - 19 - TCAD World Leader
CMOS Image Sensor Simulation 3D CIS process simulation 2D CIS including back end process simulation CIS Intensity plot (FDTD) CIS crosstalk versus angle of incidence - 20 - TCAD World Leader
LED Simulation Electron and hole populations across the triple well LED. Triple well LED Sapphire substrate GaN LED Emitted light intensity versus angle. GaN LED on sapphire substrate - 21 - TCAD World Leader
3D power device simulation for DC, AC, transient analysis incorporates the effects of self-heating, and includes models for heat sources, heat sinks, heat capacity and thermal conduction. � � 3D Power Device Simulation � � 128-bit or 256-bit extended precision for wide band-gap semiconductors � � Self-heating effects � � MixedMode - co-simulation of circuit and device elements � � Curvetrace algorithm � � Traps, interface traps, and defects � � Spontaneous and piezoelectric polarization, and phonon-assisted tunneling models (GaN) � � Parabolic field emission and anisotropic impact ionization models (SiC) - 22 - TCAD World Leader
SIC Diode Simulation Anode 1e19cm-3 4H-SiC 1e15cm-3 Cathode Quadruple precision (128-bit) simulation for SiC pin Diode - 23 - TCAD World Leader
3D Buffered Super Junction LDMOS Simulation Electric field distribution with Impact ionization rate distribution 80 volts applied to the drain. at 80 volts drain voltage. - 24 - TCAD World Leader
GaN FET Simulation GaN FET on SiC Substrate Non-ideal GaN FET breakdown characteristics (150V) using standard gate field plate design. GaN FET on Sapphire Substrate - 25 - TCAD World Leader
IGBT Simulation Switching circuit Gateway driven MixedMode simulation for fall-time measurement.a - 26 - TCAD World Leader
IGBT Simulation Switching curves of IGBT planar type (Red) and IGBT trench type (Green) at 125 � . - 27 - TCAD World Leader
Organic Devices such as TFTs, LEDs, and Solar cells are simulated for electrical and optical behavior in steady-state and transient mode. � � Organic Device Simulation � � Defect Density of States � � Hopping and Poole-Frenkel Mobility Models � � Langevin recombination � � Singlet, triplet, and dopant exciton densities � � Photon/Exciton generation rate equation � � Anti-Reflective coatings � � Output coupling and optical emission characteristics - 28 - TCAD World Leader
Organic Solar Cell Simulation Korster, L.J.A., Smits, E.C.P., Mihailetchi, V.D., and Blom, P.W.M. "Device model for the operation of polymer/fullerene bulk heterojunction solar cell", Physical Review B, Vol. 72, (2005) pp. 085205-1, 085205-9. - 29 - TCAD World Leader
3 a-Si TFT + OLED Pixel Design Simulation OLED current and light power �� a-Si:TFT + OLED potential distribution - 30 - TCAD World Leader
OLED Simulation TE mode TM mode Conventional OLED Photonic crystal Photonic crystal optical output coupling - 31 - TCAD World Leader
All compound material variations of IV-IV, III-V, II-VI 3D devices can be simulated in DC, AC, and transient. � � 3D Compound Device Simulation � � Material parameters for GaN, SiC, SiGe, GaAs, AlGaAs, InGaAsP, etc. � � Abrupt and graded heterojunctions � � Composition dependent models � � Energy balance � � Self-heating effects � � High frequency and noise analysis � � Interface and bulk traps � � Quantum mechanical simulation � � Spontaneous and piezoelectric polarization, and phonon-assisted tunneling models - 32 - TCAD World Leader
2D and 3D device simulation of various compound devices PHEMT MESFET 3D SiGe HBT HBT - 33 - TCAD World Leader
We also develop simulation solutions for custom and niche markets including: � � SONOS / SANOS / TANOS etc. � � MEMs � � Magnetic Devices � � Phase Change Memory (PCM) - 34 - TCAD World Leader
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