Radiation hardness of fully depleted CMOS Monolithic Active Pixel - - PowerPoint PPT Presentation

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Radiation hardness of fully depleted CMOS Monolithic Active Pixel - - PowerPoint PPT Presentation

Dec 26, 2023 126 likes •228 views

AD vanced MO nolithic S ensors for Radiation hardness of fully depleted CMOS Monolithic Active Pixel Sensors Tobias Bus, Benjamin Linnik, Michael Deveaux MAPS Monolithic Active Pixel Sensors MimoSIS design goals: MIMOSIS Expected

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SLIDE 1

Radiation hardness of fully depleted CMOS Monolithic Active Pixel Sensors

Tobias Bus, Benjamin Linnik, Michael Deveaux

ADvanced MOnolithic Sensors for

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SLIDE 2

The CBM-MVD

MAPS – Monolithic Active Pixel Sensors

MimoSIS design goals:

MIMOSIS – Expected performance CMOS Process Tower/Jazz 0.18 µm Quad-Well Pixel dimensions 30.1 x 26.9 µm² Spatial resolution ~ 5µm Material budget 50 µm Si (0.05 % X0) Radiation tolerance > 3Mrad (@-20°C). > 3x1013neq/cm²

  • T. Bus, DPG 2017, Münster

2

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SLIDE 3

MAPS – Monolithic Active Pixel Sensors

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Reset +3.3V +3.3V Output SiO2 SiO2 SiO2

N++ N++ N+ P+ P- P+ 15µm 50µm

  • T. Bus, DPG 2017, Münster
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SLIDE 4

Effects of non-ionizing radiation

4

e-

Defects due to radiation

Diode

e- e-

Readout Readout

Trapping & recombination

  • f signal electrons

Leakage current → higher noise

Cooling decreases this effect

Particle

Detecting layer Depleting the sensor allows to accelerate the charge collection. => More radiation tolerance.

  • T. Bus, DPG 2017, Münster
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SLIDE 5

Pipper – 2: A fully depleted HR-MAPS

5 Collecting diode

bias read

Vdiode Column OUTPUT

Collecting diode

Vdiode

bias read

Column OUTPUT

Standard pixel Pipper - 2 Issue: Standard CMOS restricted to few volts => Too few for full depletion. Analysis: Restriction due to transistor gates. Diodes and metal lines tolerate higher voltages. Approach: Use AC-couping to separate vulnerable transistors from HV on diode. ⇒ Depletion voltage up to 40V possible. Apply to 22x22 µm2 pixels.

  • T. Bus, DPG 2017, Münster
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SLIDE 6

Standard sensor – Test results

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Fe-55 Epi-layer Depleted volume

200 400 600 800 1000 1200 1400 1600 1800 2000 200 400 600 800 1000 1200 1400 1600 1800 2000 2200

Not irradiated Irradiated with 10

13 neq/cm 2

Depleted volume Epi-layer Standard sensor – Only few hits from depleted volume. Other hits: Reduced amplitude (charge sharing).

  • T. Bus, DPG 2017, Münster
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SLIDE 7

Pipper – 2 – Test results

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50 100 150 200 250 300 1000 2000 3000 4000 5000 6000

5 V 10 V 20 V 30 V 40 V

Hits mostly in depleted volume peak. No modification for >20V => indicator for full depletion

  • T. Bus, DPG 2017, Münster
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SLIDE 8

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  • T. Bus, DPG 2017, Münster

Epi-layer Depleted volume Depleted volume

20V

Standard sensor Pipper - 2

Vllt keine zeit dafür?

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SLIDE 9

100 1000 10000 1 10 100 1000 10000

S/N=31.3

1e13 neq/cm

2

5e14 neq/cm

2

220 e Sr90 β-source detection eff. 109±10% S/N=55.6

Test with 90Sr beta rays

T = -55° C Signal MPV (e) Avg. noise (e) S/N 1013neq/cm2 1290 23.19 55.6 5·1014neq/cm2 860 27.48 31.3

1290e

860e

S/N (Sr-90) >15  typically > 99% MIP - efficiency

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  • T. Bus, DPG 2017, Münster
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SLIDE 10

Summary and conclusion

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  • T. Bus, DPG 2017, Münster

This work Radiation tolerance (MIMOSA-series) A CMOS sensor allowing for 40V depletion voltage in Tower/Jazz 0.18µm has been built and tested. Results suggest full depletion. Laboratory tests suggest tolerance to >5 x 1014 neq/cm². (Remaining S/N>30 if cooled).