PVMD Delft University of Technology Learning objectives Design of - - PowerPoint PPT Presentation

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PVMD Delft University of Technology Learning objectives Design of - - PowerPoint PPT Presentation

Dec 08, 2022 343 likes •665 views

Advanced Concepts - part 1 Ren van Swaaij PVMD Delft University of Technology Learning objectives Design of the ideal solar cell Learning objectives Design of the ideal solar cell Advanced concepts based on crystalline silicon:

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SLIDE 1

PVMD

Delft University of Technology

Advanced Concepts - part 1

René van Swaaij

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SLIDE 2

Learning objectives

  • Design of the ideal solar cell
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SLIDE 3

Learning objectives

  • Design of the ideal solar cell
  • Advanced concepts based on crystalline silicon:
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SLIDE 4

Learning objectives

  • Design of the ideal solar cell
  • Advanced concepts based on crystalline silicon:
  • Passivated emitter
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SLIDE 5

Learning objectives

  • Design of the ideal solar cell
  • Advanced concepts based on crystalline silicon:
  • Passivated emitter
  • TOPCon
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SLIDE 6

Learning objectives

  • Design of the ideal solar cell
  • Advanced concepts based on crystalline silicon:
  • Passivated emitter
  • TOPCon
  • Metal wrap-through
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SLIDE 7
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SLIDE 8
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SLIDE 9
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SLIDE 10

Shockley-Queisser limit

  • Efficiency limit for single

junction solar cells Si

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SLIDE 11

Shockley-Queisser limit

  • Efficiency limit for single

junction solar cells

  • Silicon: 29.4%

Richter et al., IEEE-JPV 4, 1184-1191 (2013)

Si

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SLIDE 12

Shockley-Queisser limit

Richter et al., IEEE-JPV 4, 1184-1191 (2013)

Si

  • Efficiency limit for single

junction solar cells

  • Silicon: 29.4%
  • Auger recombination
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SLIDE 13

Shockley-Queisser limit

Richter et al., IEEE-JPV 4, 1184-1191 (2013)

Si

  • Efficiency limit for single

junction solar cells

  • Silicon: 29.4%
  • Auger recombination
  • Intrinsic c-Si of 110 µm
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SLIDE 14

Passivated Emitter, Rear Locally-diffused (PERL)

Efficiency up to 25.0%

Zhao et al. APL 73, 1991-1993 (1998)

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SLIDE 15

Passivated Emitter, Rear Locally-diffused (PERL)

  • 1. Inverted pyramids with ARC

for light trapping

Efficiency up to 25.0%

Zhao et al. APL 73, 1991-1993 (1998)

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SLIDE 16

Passivated Emitter, Rear Locally-diffused (PERL)

  • 1. Inverted pyramids with ARC

for light trapping

  • 2. Oxide layer for surface

passivation

Efficiency up to 25.0%

Zhao et al. APL 73, 1991-1993 (1998)

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SLIDE 17

Passivated Emitter, Rear Locally-diffused (PERL)

  • 1. Inverted pyramids with ARC

for light trapping

  • 2. Oxide layer for surface

passivation

  • 3. High quality FZ wafer

Efficiency up to 25.0%

Zhao et al. APL 73, 1991-1993 (1998)

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SLIDE 18

Passivated Emitter, Rear Locally-diffused (PERL)

  • 1. Inverted pyramids with ARC

for light trapping

  • 2. Oxide layer for surface

passivation

  • 3. High quality FZ wafer
  • 4. Reduced area for metal

contact

Efficiency up to 25.0%

Zhao et al. APL 73, 1991-1993 (1998)

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SLIDE 19

Passivated Emitter, Rear Locally-diffused (PERL)

  • 1. Inverted pyramids with ARC

for light trapping

  • 2. Oxide layer for surface

passivation

  • 3. High quality FZ wafer
  • 4. Reduced area for metal

contact

  • 5. Highly doped p+ and n+

regions near contacts

Efficiency up to 25.0%

Zhao et al. APL 73, 1991-1993 (1998)

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SLIDE 20

Passivated Emitter Rear Contact (PERC)

Efficiency up to 21.3% for multi-crystalline Si solar cell (Trina Solar, China)

Source figure: ISFH Zhang et al., IEEE-JPV 6, 145-152 (2016)

Standard cell PERC cell

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SLIDE 21

Tunnel Oxide Passivated Contact

n-base metal fingers p+-emitter passivating thin film antireflection coating metallization ultra-thin tunnel

  • xide (SiO2)

Phosphorus n+ Si layer

Source figure: Feldmann et al., SolMat 120, 270-274 (2014)

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SLIDE 22

Tunnel Oxide Passivated Contact

Source figure: Feldmann et al., SolMat 120, 270-274 (2014)

n-base metal fingers p+-emitter passivating thin film antireflection coating metallization Phosphorus n+ Si layer ultra-thin tunnel

  • xide (SiO2)
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SLIDE 23

Source figure: Tao et al., AIMS Material Science 3(1), 180-189 (2016)

Ultra-thin Tunnel Oxide

Efficiency up to 25.1%

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SLIDE 24

Standard cell integration

p-type base back contact busbar n-type emitter

  • Solar cell ‘tabbing’
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SLIDE 25
  • Solar cell ‘tabbing’
  • Surface area lost by cell

spacing

n-type emitter p-type base back contact busbar

Standard cell integration

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SLIDE 26

Metal wrap-through (MWT)

n-type emitter p-type base back contact ‘front’ contact

  • Front contact ‘wrapped-

through’ solar cell base

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SLIDE 27

Metal wrap-through (MWT)

n-type emitter p-type base back contact ‘front’ contact

  • Front contact ‘wrapped-

through’ solar cell base

  • All contacts on the back
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SLIDE 28

Metal wrap-through (MWT)

n-type emitter p-type base back contact ‘front’ contact

  • Front contact ‘wrapped-

through’ solar cell base

  • All contacts on the back
  • Cell spacing reduced

Sunweb technology by SCHOTT Solar and Solland Solar (2011)

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SLIDE 29

Summary

  • PERC most commonly produced crystalline silicon

solar cell

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SLIDE 30

Summary

  • PERC most commonly produced crystalline silicon

solar cell

  • TOPCon replaces back surface field with a tunneling

layer

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SLIDE 31

Summary

  • PERC most commonly produced crystalline silicon

solar cell

  • TOPCon replaces back surface field with a tunneling

layer

  • Metal wrap-through enables a more optimized

module design