SLIDE 1
PVMD
Delft University of Technology
C
+
- N
PVMD Miro Zeman Delft University of Technology Reverse bias - + - - PowerPoint PPT Presentation
PVMD Miro Zeman Delft University of Technology Reverse bias - + - - PowerPoint PPT Presentation
P-N Junction under Reverse Bias PVMD Miro Zeman Delft University of Technology Reverse bias - + V a I I C P N A I d Anode Cathode P-N junction at thermal equilibrium + - V a =0V E int - + p- type n- type diffusion drift P-N
SLIDE 2
SLIDE 3
P-N junction at thermal equilibrium + -
Va=0V Eint
+
- diffusion
drift
n-type p-type
SLIDE 4
P-N junction diode under reverse bias +
- Va
C
+
- C
A
Eint
drift diffusion
n-type p-type
SLIDE 5
P-N junction diode under reverse bias +
- Va
C
+
C A
Eint
- drift
diffusion
n-type p-type
SLIDE 6
Drift of minority carriers +
- Va
C
+
C A
Eint
- drift
diffusion
n-type p-type
6
SLIDE 7
Current flow +
- Va
C
+ diffusion drift
<
injection Drift current is limited by minority carrier density Extremely small net dark current
C A
Eint
- I
I
SLIDE 8
Thermal equilibrium
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
- 1.2
- 1.0
- 0.8
- 0.6
- 0.4
- 0.2
0.0 0.2 0.4 0.6 0.8 1.0 Energy [eV] Position [µm] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
- 0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Potential [V] Position [µm]
Band diagram and voltage across the depletion region: Va = 0.0 V (Thermal equilibrium) EF = EFN = EFP
n-type p-type n-type p-type
SLIDE 9
Reverse bias = -0.1 V
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
- 0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Potential [V] Position [µm] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
- 1.2
- 1.0
- 0.8
- 0.6
- 0.4
- 0.2
0.0 0.2 0.4 0.6 0.8 1.0 Energy [eV] Position [µm]
EC EV EFN EFP
n-type p-type n-type p-type
SLIDE 10