Pter Makk http://nanoelectronics.physics.bme.hu/ Nanoelectronics - - PowerPoint PPT Presentation
Pter Makk http://nanoelectronics.physics.bme.hu/ Nanoelectronics - - PowerPoint PPT Presentation
Interference in high quality graphene based van der Waals heterostructures Pter Makk http://nanoelectronics.physics.bme.hu/ Nanoelectronics lab Budapest University of Technology and Ecomics - Dept. of Physics Nanoelectronics Group -
Budapest University of Technology and Ecomics - Dept. of Physics Nanoelectronics Group - together with Szabolcs Csonka nanoelectronics.physics.bme.hu
Nanoelectronics lab
Quantum dots, topological superconductivity 2D materials, spintronics Circuit QED, FMR, qubits
Research interest
Facilities
Ultra low T measurements, nanofabrication (with MFA)
5
K valley K’ valley
Castro Neto et al., Rev. Mod. Phys.. 81, 109 (2009)
Properties of graphene
Honeycomb lattice with two atom basis At the Fermi energy the spectrum is linear Dirac fermions Two non-equivalent valleys
2-dimensional Massless “relativistic” particles Defect-free lattice Tunable and flexible Combining ballistic transport with superconductivity, ferromagnets, mechanical vibrations, photons Gapless p-n interface Properties tuned by van der Waals stacking: SOI or exchange, etc.
Properties of graphene
Outline
- Fabrication of high quality samples
- Fabry-Perot Interferences in pn-
junctions
- Aharonov-Bohm interferometers
- Fabry-Perot and supercurrent
interference for superlattices
- Interference in diffusive samples –
weak localization experiment to probe spin-orbit interaction
Graphite Scotch tape SiO2 chip Graphene
Novoselov et.al., Nature 438, 197 (2005)
Fabrication of graphene samples
Fabrication of graphene samples
Suspended devices
- Can have ultra-low residual disorder
- Fragile, have to be current annealed
Encapsulated devices
- More flexible fabrication is possible
- Less fragile
- R. Maurand, PM. et al., Carbon 79, 486 (2014)
Tombros et al. J. Appl. Phys. 109, 093702 (2011)
- R. Maurand, P. Rickhaus, P. Makk, et. al, Carbon 79, 486 (2014).
Fabrication of suspended samples
Fabrication of encapsulated samples
Fabrication of encapsulated devices
- encapsulation in hBN using
van der Waals pickup
- AFM to characterize the stack
- e-beam lithography and
evaporation
- bonding and measurements at
low temperature
Fabrication of encapsulated samples
Fabrication of encapsulated devices
- 1D side contacts to access the stack
- shaping using plasma etching
- fabrication of top-gates using addition steps
- pre-patterned graphite bottomgates
pnp - junction pn -junction
Wang et al., Science 342, 614 (2013); Zomer et al., APL 105, 013101 (2014)
Lengthscales Lspin Lφ Le LBohr
ballistic diffusive non coherent, diffusive spin-conserving non- spin-conserving coherent
Lspin Lφ Le LBohr
L
L >> lm diffusive motion, L << lm ballistic motion 1
t
2
t
) / exp( ) cos( 2
L 2 1 2 2 2 1 total
t t t t T
Coherence length
D l
L<< l phase coherent
Outline
- Fabrication of high quality samples
- Fabry-Perot Interferences in pn-
junctions
- Aharonov-Bohm interferometers
- Fabry-Perot and supercurrent
interference for superlattices
- Interference in diffusive samples –
weak localization experiment to probe spin-orbit interaction
p Hole doping n Electron doping
Gapless pn interfaces
Positive interference: For graphene:
Fabry-Perot interferences
- P. Rickhaus, R. Maurand, M.H. Liu et al. Nature Comm. 4, 2342 (2013)
FABRY-PÉROT
Graphene flake 2x2mm pn nn pp np
Fabry-Perot interferences in p-n junctions
- P. Rickhaus, R. Maurand, M.H. Liu et al. Nature Comm. 4, 2342 (2013)
FABRY-PÉROT
DG/G: 1% DG/G: 5%
Fabry-Perot interferences in p-n junctions
FABRY-PÉROT
Why are the bipolar
- scillations better
visible?
Similar work:
- A. L. Grushina, et. al., APL 102, 223102 (2013)
Bias spectroscopy (particle in a box)
Fabry-Perot interferences in p-n junctions
FABRY-PÉROT
sharp smooth
The strong collimation at the smooth p-n interface increases the visibility
Cheianov, V. & Fal’ko, V. PRB 74, 041403 (2006)
Smooth: kFd>>1 Sharp: kFd <<1
Fabry-Perot interferences in p-n junctions
i c p p n
- P. Rickhaus, P.M., et al., APL. 107, 251901 (2015)
FABRY-PÉROT
Sharp interfaces DG/G: 1% Sharp/smooth interface DG/G: 4 % Smooth interfaces DG/G: 12%
n - n’ - n n - p’ - n p - n - p p- p’ - p
Fabry-Perot interferences in p-n-p junctions
Ballistic transport in pnp junctions
Ballistic transport in pn – junctions (B=0)
Fabry Perot interferences signal ballistic transport
- C. Handschin, P.M. et al., Nano Lett., 17,
328 (2017)
Ballistic transport in pn junctions
FP oscillations appear in other quantities
- Thermopower (Seebeck coefficient)
- Supercurrent etc. (oscillation in RN)?
Seebeck (a.u.) In SC junctions:
- V. E. Calado et al., Nat. Nano. 10, 761 (2015)
- M. Ben Shalom et al., Nat. Phys. (2015)
- M. T. Allen et al., Nat. Phys 12, 128 (2016)
- R. Kraft et al., Nature Commun. 9, 1722 (2018)
Outline
- Fabrication of high quality samples
- Fabry-Perot Interferences in pn-
junctions
- Aharonov-Bohm interferometers
- Fabry-Perot and supercurrent
interference for superlattices
- Interference in diffusive samples –
weak localization experiment to probe spin-orbit interaction
Ballistic transport in pn junctions
Low magnetic field – Snake states
- P. M., et al., PRB. 98, 035413 (2018) and P.
Rickhaus, P.M. et al. Nature Comm. 6, 6470 (2015)
Quantum Hall
Landau levels forming in the bulk At the edges Quantum Hall channels conduct current. At high magnetic field Landau levels form Special band-structure of graphene: Landau level at zero energy
- E. Andrei et al., Rep. Prog.
Phys, 75 056501 (2012)
Quantum Hall
18 14 10 6 2 G0 (e
2/h)
30 20 10 VBG (V)
8 6 4 2 B (T)
30 20 10
- 10
- 20
- 30
VBG (V) 8 6 4 2 B (T)
- 40
- 20
20 40 Gdiff (e
2/h)
G_xy
Conductance plateaus at ...,-6,-2,2,6,... e2/h, when Ef is between LLs
Quantum Hall p-n junctions
In n-n’ or p-n junctions Quantum Hall channels flow in the bulk Where bands meet Ef, quantum channels form in the bulk Junctions formed using local gates
Edge-state Aharonov-Bohm interference
High magnetic field – Aharonov Bohm oscillations
Morikawa et al., APL 106, 183101 (2015) Wei et al., Science Adv. 3, 8 (2017)
Different than usual Aharonov-Bohm: Interferometer size changes
- P. M., et al., PRB. 98, 035413 (2018) and C. Handschin, P.M. et al., Nano Lett. 17,5389 (2017 )
Edge-state Aharonov-Bohm interference
High magnetic field – Aharonov Bohm oscillations
Loss of phase coherence
- P. M., et al., PRB. 98, 035413 (2018)
Outline
- Fabrication of high quality samples
- Fabry-Perot Interferences in pn-
junctions
- Aharonov-Bohm interferometers
- Fabry-Perot and supercurrent
interference for superlattices
- Interference in diffusive samples –
weak localization experiment to probe spin-orbit interaction
Graphene superlattices
32
Θ>>0° Θ>0° Θ=0°
- A. Geim et al., Nat. Materials 6, 183 (2007)
FP oscillations in a superlattices
Peierls distortion
Wikipedia
New unit cell leads to band distortion
- J. Wallbank et al., PRB 87, 245408 (2013)
- C. Dean et al., Nature 497, 598(2013)
Satellite Dirac-peaks
FP oscillations in a superlattices
Semi-transparent interface is defined by: not present main DP
- sat. DP (EF>0)
- sat. DP (EF<0)
Ef
Supercurrent
Cooper pair Andreev pair
Andreev reflections: supercurrent induced through the graphene DC Josephson effect (dissapationeless current from phase difference): 𝐽 = 𝐽𝐷 f(𝜚𝑀 − 𝜚𝑆)
Critical current
𝑱𝒅
0.6 0.4 0.2 0.0 dV/dI (k
- 400
400 I (nA)
Supercurrent in superlattice
- The Andreev pairs decay
with time → 𝑺𝒐𝑱𝒅 ∝ ℏ
𝝊 , with τ the
traversal time
Supercurrent in superlattice
1 Ic / Ic,max
- 4
- 2
2 4 B (mT) 1 Ic / Ic,max
- 4
- 2
2 4 B (mT)
Supercurrent distributions: Interference experiment: apply out-of plane magnetic field
Supercurrent in superlattice
Origin?
- Topological origin?
- Chemical doping
Measurement shows more edge current close to the van Hove singularity points (flat bands, small velocity)
- D. Indolese, R. Delagrange, P.M., Phys. Rev. Lett. 121, 137701 (2018)
Outline
- Fabrication of high quality samples
- Fabry-Perot Interferences in pn-
junctions
- Aharonov-Bohm interferometers
- Fabry-Perot and supercurrent
interference for superlattices
- Interference in diffusive samples –
weak localization experiment to probe spin-orbit interaction
Graphene for spintronics
Ideal material for spintronics: long spin lifetime – but no spin orbit Control with electric field? Topological states? Spin-orbit can be engineered using van der Waals heterostructures (e.g. WSe2)
Weak-antilocalization
Large samples –diffusive but phase coherent: Weak localization
- Coherent wave function leads to
interference effects
- No SOC, B = 0
- SOC leads to random walk on Block
sphere (on average 2π rotation)
0.6 0.4 0.2 0.0 D (e
2/h) - D40K (e 2/h)
- 100
- 50
50 100 Bz (mT) 1.8 K
- 0.5 V < VBG < 4.5 V
- 0.14
- 0.12
- 0.10
- 0.08
- 0.06
- 0.04
- 0.02
0.00 D0.25 K - D30 K (e
2/h)
- 20
- 10
10 Bz (mT) 0.25 K
Weak-antilocalization in G/WSe2
graphene hBN WSe2 High quality devices: investigation of SO timescales From fitting procedure
McCann and Fal’ko, PRL 108, 166606 (2012)
Weak-antilocalization in G/WSe2
Doping dependence allows the identification of relaxation mechanism and relevant spin
- rbit term
Valley Zeeman term
- S. Zihlmann, ...,P.M., PRB 97, 045411 (2018)
Martin Gmitra: University of Regensburg Aron Cummings and Jose. H Garcia: ICN2, Barcelona
Summary
- K. Zimmermann et al., Nat. Comm. 8,14983 (2017)
- M. Eich et al., arXiv:1803.02923
- Y. Cao et al., Nature 556, 43 (2018)
Acknowledgement
- P. Rickhaus
- C. Handschin
- C. Schönenberger
GrapheneMan
Ming-Hao Liu
UNIVERSITÄT REGENSBURG
- S. Zihlmann
- D. Indolese
L .Wang
- R. Delagrange
- Cs. Szabolcs
- F. Bálint
K.K. Zoltán
- K. Máté
- Sz. Bálint