Noise Margin and Gate Delay Debdeep Mukhpadhyay IIT Madras Logic - - PowerPoint PPT Presentation

noise margin and gate delay
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Noise Margin and Gate Delay Debdeep Mukhpadhyay IIT Madras Logic - - PowerPoint PPT Presentation

Noise Margin and Gate Delay Debdeep Mukhpadhyay IIT Madras Logic levels Solid logic 0/1 defined by V SS /V DD . Inner bounds of logic values V L /V H are not directly determined by circuit properties, as in some other logic families. V


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SLIDE 1

Noise Margin and Gate Delay

Debdeep Mukhpadhyay IIT Madras

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SLIDE 2

Logic levels

  • Solid logic 0/1 defined by VSS/VDD.
  • Inner bounds of logic values VL/VH are not

directly determined by circuit properties, as in some other logic families.

logic 1 logic 0 unknown

VDD VSS VH VL

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SLIDE 3

Logic level matching

  • Levels at output of one gate must be

sufficient to drive next gate.

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SLIDE 4

Transfer characteristics

  • Transfer curve shows static input/output

relationship—hold input voltage, measure

  • utput voltage.
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SLIDE 5

Noise Margins

  • How much noise can a gate input see

before it does not recognize the input?

Indeterminate Region NML NMH Input Characteristics Output Characteristics VOH VDD VOL GND VIH VIL Logical High Input Range Logical Low Input Range Logical High Output Range Logical Low Output Range

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SLIDE 6

Logic Levels

  • To maximize noise margins, select logic

levels at

VDD Vin Vout VDD βp/βn > 1 Vin Vout

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SLIDE 7

Logic Levels

  • To maximize noise margins, select logic

levels at

– unity gain point of DC transfer characteristic

VDD Vin Vout VOH VDD VOL VIL VIH Vtn Unity Gain Points Slope = -1 VDD- |Vtp| βp/βn > 1 Vin Vout

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SLIDE 8

Noise margin

  • Noise margin = voltage difference between
  • utput of one gate and input of next. Noise

must exceed noise margin to make second gate produce wrong output.

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SLIDE 9

Delay Definitions

  • tpdr:
  • tpdf:
  • tpd:
  • tr:
  • tf: fall time
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SLIDE 10

Delay Definitions

  • tpdr: rising propagation delay

– From input to rising output crossing VDD/2

  • tpdf: falling propagation delay

– From input to falling output crossing VDD/2

  • tpd: average propagation delay

– tpd = (tpdr + tpdf)/2

  • tr: rise time

– From output crossing 0.2 VDD to 0.8 VDD

  • tf: fall time

– From output crossing 0.8 VDD to 0.2 VDD

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SLIDE 11

Delay Definitions

  • tcdr: rising contamination delay

– From input to rising output crossing VDD/2

  • tcdf: falling contamination delay

– From input to falling output crossing VDD/2

  • tcd: average contamination delay

– tpd = (tcdr + tcdf)/2

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SLIDE 12

Simulated Inverter Delay

  • Solving differential equations by hand is too hard
  • SPICE simulator solves the equations numerically

– Uses more accurate I-V models too!

  • But simulations take time to write

(V) 0.0 0.5 1.0 1.5 2.0 t(s) 0.0 200p 400p 600p 800p 1n tpdf = 66ps tpdr = 83ps

Vin Vout

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SLIDE 13

Delay Estimation

  • We would like to be able to easily estimate delay

– Not as accurate as simulation – But can we give estimates?

  • The step response usually looks like a 1st order RC

response with a decaying exponential.

  • Use RC delay models to estimate delay

– C = total capacitance on output node – Use effective resistance R – So that tpd = RC

  • Characterize transistors by finding their effective R

– Depends on average current as gate switches

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SLIDE 14

RC delay

  • Load is resistor + capacitor, driver is

resistor.

tf = 0.69 R CL For rise time replace by the PMOS resistance.

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SLIDE 15

RC Delay Models

  • Use equivalent circuits for MOS transistors

– Ideal switch + capacitance and ON resistance – Unit nMOS has resistance R, capacitance C – Unit pMOS has resistance 2R, capacitance C

  • Capacitance proportional to width
  • Resistance inversely proportional to width

k g s d g s d kC kC kC R/k k g s d g s d kC kC kC 2R/k

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SLIDE 16

Example: 3-input NAND

  • Sketch a 3-input NAND with transistor

widths chosen to achieve effective rise and fall resistances equal to a unit inverter (R).

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SLIDE 17

Example: 3-input NAND

  • Sketch a 3-input NAND with transistor

widths chosen to achieve effective rise and fall resistances equal to a unit inverter (R).

3 3 2 2 2 3

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SLIDE 18

3-input NAND Caps

  • Annotate the 3-input NAND gate with gate

and diffusion capacitance.

2 2 2 3 3 3

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SLIDE 19

3-input NAND Capacitors

  • Annotate the 3-input NAND gate with gate

and diffusion capacitance.

2 2 2 3 3 3 3C 3C 3C 3C 2C 2C 2C 2C 2C 2C 3C 3C 3C 2C 2C 2C

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SLIDE 20

3-input NAND Capacitors

  • Annotate the 3-input NAND gate with gate

and diffusion capacitance.

9C 3C 3C 3 3 3 2 2 2 5C 5C 5C

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SLIDE 21

Elmore Delay

  • ON transistors look like resistors
  • Pullup or pulldown network modeled as RC

ladder

  • Elmore delay of RC ladder

R1 R2 R3 RN C1 C2 C3 CN

( ) ( )

nodes 1 1 1 2 2 1 2

... ...

pd i to source i i N N

t R C R C R R C R R R C

− −

≈ = + + + + + + +

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SLIDE 22

Example: 2-input NAND

  • Estimate worst-case rising and falling

delay of 2-input NAND driving h identical gates.

h copies

2 2 2 2 B A x Y

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SLIDE 23

Example: 2-input NAND

  • Estimate rising and falling propagation

delays of a 2-input NAND driving h identical gates.

h copies

6C 2C 2 2 2 2 4hC B A x Y

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SLIDE 24

Example: 2-input NAND

  • Estimate rising and falling propagation

delays of a 2-input NAND driving h identical gates.

h copies

6C 2C 2 2 2 2 4hC B A x Y

R (6+4h)C Y

pdr

t =

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SLIDE 25

Example: 2-input NAND

  • Estimate rising and falling propagation

delays of a 2-input NAND driving h identical gates.

h copies

6C 2C 2 2 2 2 4hC B A x Y

R (6+4h)C Y

( )

6 4

pdr

t h RC = +

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SLIDE 26

Example: 2-input NAND

  • Estimate rising and falling propagation

delays of a 2-input NAND driving h identical gates.

h copies

6C 2C 2 2 2 2 4hC B A x Y

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SLIDE 27

Example: 2-input NAND

  • Estimate rising and falling propagation

delays of a 2-input NAND driving h identical gates.

h copies

6C 2C 2 2 2 2 4hC B A x Y

pdf

t =

(6+4h)C 2C R/2 R/2 x Y

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SLIDE 28

Example: 2-input NAND

  • Estimate rising and falling propagation

delays of a 2-input NAND driving h identical gates.

h copies

6C 2C 2 2 2 2 4hC B A x Y

( )( ) ( )

( )

( )

2 2 2

2 6 4 7 4

R R R pdf

t C h C h RC = + + + ⎡ ⎤ ⎣ ⎦ = +

(6+4h)C 2C R/2 R/2 x Y

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SLIDE 29

Delay Components

  • Delay has two parts

– Parasitic delay

  • 6 or 7 RC
  • Independent of load

– Effort delay

  • 4h RC
  • Proportional to load capacitance
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SLIDE 30

CMOS inverter delay

  • An approximate method:

– Assume constant Iavg – The NMOS and the PMOS are in saturated region and provide a constant current.

( )

( )

2 2 TP CC p CC load PLH Tn CC n CC load PHL

V V k V C t V V k V C t − = − =

V1=Vcc V2=½Vcc t1 t2 I1

Iavg = I1

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SLIDE 31

Some Points

  • The delay of a gate, be it the rise or the fall

time is inversely proportional to VDD.

  • Point to ponder: Effect of sizing on the

inverter gate delay.