MICROELECTRONICS ENGINEERING MICROELECTRONICS ENGINEERING GROUP - - PowerPoint PPT Presentation

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MICROELECTRONICS ENGINEERING MICROELECTRONICS ENGINEERING GROUP - - PowerPoint PPT Presentation

Mar 19, 2024 198 likes •517 views

MICROELECTRONICS ENGINEERING MICROELECTRONICS ENGINEERING GROUP GROUP PROJECT EXAMPLES (Integrated Circuits & MEMS) And LABORATORY CAPABILITIES Contact: Contact : Assoc. Prof. YASAR GURBUZ . Prof. YASAR GURBUZ Assoc SABANCI

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SLIDE 1

MICROELECTRONICS ENGINEERING MICROELECTRONICS ENGINEERING GROUP GROUP

PROJECT EXAMPLES (Integrated Circuits & MEMS) And LABORATORY CAPABILITIES

Contact Contact: :

Assoc

  • Assoc. Prof. YASAR GURBUZ

. Prof. YASAR GURBUZ SABANCI UNIVERSITY, FENS SABANCI UNIVERSITY, FENS Orhanli Orhanli, Tuzla 34956 , Tuzla 34956 – – ISTANBUL ISTANBUL -

  • TURKEY

TURKEY Tel: Tel: +90 +90(216) 483 9533, (216) 483 9533, Fax Fax: : +90 +90(216) 483 9550 (216) 483 9550 e e-

  • mail:

mail: yasar@sabanciuniv.edu http://micro.sabanciuniv.edu

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SLIDE 2

MICROELECTRONICS GROUP

Outline Outline

  • MEMS

MEMS PROJECT EXAMPLES

  • Chemical / Bio Sensors
  • RF - MEMS
  • Resonator
  • Filters
  • Oscillator
  • Ultrasonic Transducers
  • IC TECHNOLOGY
  • Analog, Digital and Mixed-Signal Design
  • LAB CAPABILITIES
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SLIDE 3

PROJECT EXAMPLES: MEMS PROJECT EXAMPLES: MEMS

MICROELECTRONICS GROUP

Target Target Performance Performance Parameters Parameters

  • detection

detection of

  • f
  • oxygen
  • xygen,

, hydrogen and hydrocarbons hydrogen and hydrocarbons

  • bio

bio/ / Chemical weapon agents Chemical weapon agents

  • mine

mine

  • msec

msec response response time time

  • high sensitivity

high sensitivity and and selectivity selectivity

  • <

<100 100 mW mW power power consumption consumption

  • small

small / / portative system const portative system const. .

CMOS COMPATIBLE, CMOS COMPATIBLE, MEMS MEMS-

  • BASED CHEMICAL SENSOR

BASED CHEMICAL SENSOR

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SLIDE 4

PROJECT EXAMPLES: MEMS PROJECT EXAMPLES: MEMS

MICROELECTRONICS GROUP

CMOS COMPATIBLE, CMOS COMPATIBLE, MEMS MEMS-

  • BASED

BASED CHEMICAL SENSOR CHEMICAL SENSOR Mask Mask layout layout

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SLIDE 5

PROJECT EXAMPLES: MEMS PROJECT EXAMPLES: MEMS

MICROELECTRONICS GROUP

CMOS COMPATIBLE, CMOS COMPATIBLE, MEMS MEMS-

  • BASED CHEMICAL SENSOR

BASED CHEMICAL SENSOR a) b)

Temperature Distribution Stress Distribution

530oC

0.097 GPa

Electro Electro-

  • thermal

thermal-

  • mechanical

mechanical Simulation Results Simulation Results

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SLIDE 6

Target features: Sensing H2, O2, CO, and Hydrocarbons High temp range; ~ 100 - 450°C Quick Response; ~ 1 Second Quick Recovery; ~ 10 Seconds

Applications Health Care Industry Home applications Consumer Applications Defence: biological w agents and mine detection Electronic Nose / Tongue Environmental Health

  • Indoor/Outdoor Air/Water Pollution Monitoring

MEMS - MEMS - Chemical / Biological Sensor Chemical / Biological Sensor Tuðba

MICROELECTRONICS GROUP

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SLIDE 7

PROJECT EXAMPLES: MEMS PROJECT EXAMPLES: MEMS

MICROELECTRONICS GROUP

CMOS COMPATIBLE, CMOS COMPATIBLE, MEMS MEMS-

  • BASED CHEMICAL SENSOR

BASED CHEMICAL SENSOR Readout (Signal Processing) Circuitry AMS(Austria MicroSystems) 0.6 µm technology

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SLIDE 8

RF - MEMS: RF - MEMS: Resonator Resonator Mansoor

Mansoor, Mustafa, , Mustafa, Eray Eray

MICROELECTRONICS GROUP

Output(sensing) input DC bias anchors

resonator for resonator for wireless wireless communication communication e electronics lectronics Applications:

  • RF filters
  • VCOs
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SLIDE 9

PROJECT EXAMPLES: RF PROJECT EXAMPLES: RF-

  • MEMS

MEMS

MICROELECTRONICS GROUP

Output(sensing) input DC bias anchors

2 1 3

3714 . 2 2 2               × +       × × × × = × = M M L W h E f w

P r

  • π

π

3

2       × × × = L W h E ksys

( ) 2

1 sys P

k M A d Q × × × = µ

L

w

RESONATOR RESONATOR

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SLIDE 10

PROJECT EXAMPLES: RF PROJECT EXAMPLES: RF-

  • MEMS

MEMS

MICROELECTRONICS GROUP

RESONATOR, RESONATOR, W / L

W / L affect affect on

  • n performance parameters

performance parameters

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SLIDE 11

PROJECT EXAMPLES: RF PROJECT EXAMPLES: RF-

  • MEMS

MEMS

MICROELECTRONICS GROUP

RESONATOR, RESONATOR, W / L

W / L affect affect on

  • n performance parameters

performance parameters Maximum output voltage at 457 kHz

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SLIDE 12

PROJECT EXAMPLES: RF PROJECT EXAMPLES: RF-

  • MEMS

MEMS

MICROELECTRONICS GROUP

MEMS MEMS-

  • based

based IF IF band band-

  • pass

pass FILTER FILTER

0.3-3 % 0.5-1 dB 50000 455kHz In Vacuum Target Target parameters parameters In atmosphere 3dB BW IL Q fr 500 500-

  • 1000

1000 500-1000 1 1-

  • 20 dB

20 dB 20-40 dB 0.3-3 % 455kHz 0.3x2 0.3x2-

  • 3x2 %

3x2 % 990kHz 990kHz

Design Parameters:

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SLIDE 13

PROJECT EXAMPLES: RF PROJECT EXAMPLES: RF-

  • MEMS

MEMS

MICROELECTRONICS GROUP

MEMS MEMS-

  • based

based IF IF band band-

  • pass

pass FILTER FILTER

Sense Electrode Drive Electrode Ground Contact Coupling Spring Resonator Sense Electrode Drive Electrode Ground Contact Coupling Spring Resonator Resonator

Filter Layout

General characteristics of a bandpass filter

Umax Um fm Um/1.41 BW3dB

U f

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SLIDE 14

PROJECT EXAMPLES: RF PROJECT EXAMPLES: RF-

  • MEMS

MEMS

MICROELECTRONICS GROUP

MEMS MEMS-

  • based

based IF IF band band-

  • pass

pass FILTER FILTER

Coupling Spring

3

2         × × × =

spring beam spring spring

l w h E k

L

w

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SLIDE 15

PROJECT EXAMPLES: RF PROJECT EXAMPLES: RF-

  • MEMS

MEMS

MICROELECTRONICS GROUP

MEMS MEMS-

  • based

based IF IF band band-

  • pass

pass FILTER FILTER

Case I: Um/Umax = 1, Case II: Um/Umax = 0.707 Maximum bandwidth

spring spring spring

C x C V C k

2 2

      ∂ ∂ × = = η

f1 = 336.750k f2 = 337.067k BW = 682.938 f1 = 336.000k f2 = 337.500k BW = 1.500K

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SLIDE 16

MICROELECTRONICS GROUP

Resonator/Filter Mask Layout on 4” Wafer 15 Resonator One Resonator

MEMS MEMS-

  • based

based IF IF band band-

  • pass

pass FILTER FILTER PROJECT EXAMPLES: RF PROJECT EXAMPLES: RF-

  • MEMS

MEMS

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SLIDE 17

MICROELECTRONICS GROUP

Cross-section of a Resonator SUB

SiO2

Connector Connector GND Input/output

DC Bias PolySi

Input/Output bias contacts

Shuttle

Anchors

PROJECT EXAMPLES: RF PROJECT EXAMPLES: RF-

  • MEMS

MEMS

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SLIDE 18

MICROELECTRONICS GROUP

PROJECT EXAMPLES: RF PROJECT EXAMPLES: RF-

  • MEMS

MEMS

2 4 3 2 1 2 2 1 4 3

1 ) ( 1 1 ) ( LCs R R R R sC LCs R R sC R R s Af +       − + + + +       + =

LC w 1

0 =

Electrical model of a resonator

OSCILLATOR OSCILLATOR

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SLIDE 19

MICROELECTRONICS GROUP

PROJECT EXAMPLES: RF PROJECT EXAMPLES: RF-

  • MEMS

MEMS OSCILLATOR OSCILLATOR

  • Oscillation at 456.8 kHz

Fr = 456.8 kHz

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SLIDE 20

RF - MEMS: Switch Gamze, Emrah

MICROELECTRONICS GROUP

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SLIDE 21

MEMS: Finger Print Sensor Finger Print Sensor Beril, Özhan

MICROELECTRONICS GROUP

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SLIDE 22

Chemical Sensor (H2, O2, CO Demonstrated) (Many others possible) Salient Features > 500°C Quick Response > 1 Second Quick Recovery < 10 Seconds Radiation Tolerance > 10 MegaRads

Applications Nuclear/Conventional Power Plants

  • Inside/Outside Containment Vessel
  • Gas Demonstrated/Liquid in

Development

  • Exhaust Flue Monitoring

Automotive Emissions Monitoring

  • Exhaust Pipe/Catalytic Converter

Industrial Applications

  • High Temperature Process Control

Fuel Cell Operation

  • Determine H2 Density In/Around Units

Environmental Health

  • Indoor/Outdoor Air/Water Pollution Monitoring

0.0 0.5 1.0 1.5 2.0 2.5 0.1 0.2 0.3 0.4 0.5 Current (mA) Hydrogen Pressure (Torr)

27°C Device B Vbias = 0.75 volts Vbias = 0.5 volts

Solid State Chemical Sensor, diamond technology

Developed at VANDERBILT UNIVERSITY Developed at VANDERBILT UNIVERSITY

MICROELECTRONICS GROUP

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SLIDE 23

Features Signal Output

  • 2 to 10 times Silicon

High Temperature

  • > 500°C

High Bandwidths

  • > 500 kHz

Radiation Tolerance

  • > 10 MegaRads

Applications

Nuclear/Conventional Power Plants Automotive/Aerospace

  • Engine Monitoring
  • Flight Monitoring

Industrial Manufacturing

  • Process Controls

Applications requiring high temperature and radiation tolerant sensing

MEMS Pressure/Acceleration Sensors

Developed at VANDERBILT UNIVERSITY Developed at VANDERBILT UNIVERSITY

MICROELECTRONICS GROUP

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SLIDE 24

Micro-Tip Emitter Array Micro-Tip Triode Salient Features High Current Cold Cathode

  • 100 - 1,000 Amps/cm2

High Temperature

  • > 500°C

Radiation Tolerant

  • >> 10 MegaRads

High Performance Switch

  • Power Amplifier

Applications Cold Cathode for all

  • RF/Microwave Power Devices

Neutralizer and Ionizer for Ion Propulsion Plasma Contractor High Power/Voltage Controls

  • Electric Power Industry
  • Pulsed Power Systems
  • Electric Automobile

Micro-Tip Emitters/Devices - MEMS

Developed at VANDERBILT UNIVERSITY Developed at VANDERBILT UNIVERSITY

MICROELECTRONICS GROUP

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SLIDE 25

MICROELECTRONICS GROUP

PROJECT EXAMPLES: MEMS PROJECT EXAMPLES: MEMS

CAPACITIVE ULTRASONIC TRANSDUCERS ( CAPACITIVE ULTRASONIC TRANSDUCERS (cMUTS cMUTS) )

Cross section of a cMUT

cMUT mask layouts

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SLIDE 26

MICROELECTRONICS GROUP

PROJECT EXAMPLES: MEMS PROJECT EXAMPLES: MEMS

CAPACITIVE ULTRASONIC TRANSDUCERS ( CAPACITIVE ULTRASONIC TRANSDUCERS (cMUTS cMUTS) )

SEM SEM pictures pictures of

  • f

c cMUT MUT’s ’s

Electrical Characterization Electrical Characterization

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SLIDE 27

MICROELECTRONICS GROUP

PROJECT EXAMPLES: PROJECT EXAMPLES: Analog

Analog & & Digital Digital IC IC

Analog Readout Circuitry for Chemical Sensors, AMS 0.6um CMOS technology a full-custom sorting engine is realized to process 63 input vectors of 16-bits operating at a clock frequency of 200MHz , using conventional 0.35 ∝ ∝ ∝ ∝m CMOS technology.

Digital IC Analog IC

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SLIDE 28

MICROELECTRONICS GROUP

LAB CAPABILITIES LAB CAPABILITIES Idea

Design/Simulation Mask Making

(outsourcing)

Chem/Bio Pressure Light Thermal Electrical etc.

Sensors & Sensors & Transducers Transducers

Etching (wet/dry) Patterning Cleaned Silicon Substrate Vacuumed Cavity Deposition/Sputter Wire Bonding Packaging Testing (Atmospheric Pressure) Testing (Sub-Atmospheric Environment)

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SLIDE 29

Design and Simulation Lab Design and Simulation Lab

  • SUN Workstations

SUN Workstations

  • 3x ULTRA

3x ULTRA-

  • 10 (1

10 (1 GByte GByte RAM) RAM)

  • 4x ULTRA

4x ULTRA-

  • 5 (512

5 (512 MByte MByte RAM) RAM)

  • 24

24x HP Pentium x HP Pentium IV IV PCs PCs

MICROELECTRONICS GROUP

  • Europractice
  • Cadence / Synopsys
  • HSpice, Saber
  • MemsCap, MemCad, Ansys

Software: Hardware:

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SLIDE 30

MICROELECTRONICS GROUP

LAB CAPABILITIES LAB CAPABILITIES

MASK ALIGNER MASK ALIGNER

Specs Specs

  • Exposure Optics UV:

300nm

  • Automated delivery

system

  • Variable Dose
  • Separate View

Aligners Capability Capability

  • 1um resolution

1um resolution

SPUTTER SPUTTER

Specs.: Specs.:

  • Vacuum: 10-7 Torr
  • Temperature 350oC
  • RF Power (600W) , DC

Power (500W)

  • 20 – 100kHz variable

frequency pulse

  • 3 Gas inputs
  • Load Lock Chamber
  • Computer Controlled

Deposition Capability: Deposition Capability:

  • Metals
  • Oxides
  • Reactive coating
  • oxides & nitrides

RIE RIE

Specs: Specs: ICP, 1500W, 13.56MHz

  • RIE, 600W
  • 4 Gas Lines
  • 0.05-0.5mbar
  • End Point Detector

Etch Capabilities: Etch Capabilities: Oxide

  • Nitride
  • Semiconductor (Si.

GaAs etc…)

  • Metals
  • MISC. FACILITIES
  • MISC. FACILITIES
  • Microscope
  • Ultrasonic Cleaner
  • Balance
  • Hot Plate Stirrer
  • Small Capacity Furnace,

3 zone (1200oC)

Class Class 1000 1000 Clean Room Clean Room

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SLIDE 31
  • IC Probe Station
  • Surface Profiler
  • Logic Analysis System
  • Semiconductor Parameter Analyzer
  • 500 MHz Infiniium Oscilloscope
  • 1 GHz Infiniium Oscilloscope
  • Spectrum Analyzer
  • Impedance Analyzer
  • RF Signal Generator
  • Sampling Oscilloscope
  • Arbitrary Waveform Generator
  • Pulse Generator

Test Test and Measurement Lab and Measurement Lab

MICROELECTRONICS GROUP