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Melt infiltrated/textured YBCO bulks with artificially patterned holes S. Meslin a , C. Harnois a , D. Chateigner a , X. Chaud b and J.G. Noudem a a Laboratory of Crystallography and Materials Sciences CRISMAT-ENSICAEN, CNRS UMR 6508, Caen -


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Melt infiltrated/textured YBCO bulks with artificially patterned holes

  • S. Meslina, C. Harnoisa, D. Chateignera, X.

Chaudb and J.G. Noudema

aLaboratory of Crystallography and Materials Sciences

CRISMAT-ENSICAEN, CNRS UMR 6508, Caen - France

bCRETA/CNRS, Grenoble - France

Cambridge Oct’03

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  • facilitate the sample oxygenation and decrease

the crack number in the ab planes

  • decrease the number of voids and pores in large

samples

  • simplify the sample shaping for fault current

limiters

  • improve the sample cooling during applications,

avoiding hot spots

Aim

Cambridge Oct’03

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SLIDE 3
  • Preparation of regular arrays of antidots in Y123 thin

films and observation of vortex lattice matching effets

  • A. Castellanos, P. Selders, M. Vaupel, R. Wördenweber, G.

Ockenfuss, A. v.d. Hart and K. Keck : EUCAS (1997) the Netherlands

  • Superconducting foam

R.E. Suddakar and G.J. Schmitz SST 15(2002) L21

  • Growth of single domains through sintered YBaCuO pellets

drilled with an array of holes for the fabrication of c-axis superconducting elements for current limitation application

  • R. Tournier, X. Chaud, D. Isfort, L. Porcar, G. Kapelski :

Pasreg-2003 Jena (Germany)

State of the art

Cambridge Oct’03

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SLIDE 4

Composition : TSMG : Y123 + Y211 (25 mol %) + CeO2+SnO2 IG : (Y035+x%Y123) / Y211+ CeO2+SnO2 Process :

  • sintering (920°C - 12 hours)
  • drilling (0.5 to 2 mm diameter holes)
  • conventionnal TSMG and/or melt infiltration

growth (Sm123 seed)

Samples preparation

Cambridge Oct’03

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As-process samples

c-axis

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SLIDE 6

Microstructures

Seed location

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SLIDE 7

Meander shape/fault current limiter elements

c-axis c-axis

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{006} Pole figure

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With hole Without hole

Field mapping : FC (0.4 T, 77K)

0.00E+00 2.50E-01 5.00E-01 7.50E-01 1.00E+00 Normalised trapped field X (Step=0.2 mm) Y ( S t e p = . 2 m m ) 0.00E+00 2.50E-01 5.00E-01 7.50E-01 1.00E+00 Normalised trapped field X (Step=0.2 mm) Y (Step=0.2 mm)

Similar values of the trapped field

No significant perturbation induced by the holes

Cambridge Oct’03

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Critical current density

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SLIDE 11

The perforated samples exhibit a c-axis grain

  • rientation confirmed by pole figure and the single

domain character is evidenced by trapped-field distribution. SEM studies have shown that the hole presence does not hinder the domain growth and that the typical microstructure is conserved. Further investigations concerning oxygenation effect, transport-Jc measurements, maximum trapped field capacity and interconnected of regular holes are under way.

Conclusion and outlook

Cambridge Oct’03