for the IBL Detector Andrea Gaudiello Universit degli Studi Di - - PowerPoint PPT Presentation
8th Trento Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies) 3D Modules Production for the IBL Detector Andrea Gaudiello Universit degli Studi Di Genova INFN On behalf of the ATLAS IBL Collaboration A.
Andrea Gaudiello Università degli Studi Di Genova – INFN On behalf of the ATLAS IBL Collaboration
8th “Trento” Workshop
(3D and P-type Technologies)
1 Feb,18, 2012, Trento
Feb,18, 2012, Trento
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Feb,18, 2012, Trento
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A stave is equipped with: Central region: 12 Double-chip modules (Planar/CiS) Forwarded regions: 4+4 Single-chip modules (3D FBK & CNM) The Insertable B-Layer (IBL) is composed by 14 Staves
Wafer Produced & Tasted Selected UBM (by IZM) Comment
FBK – A10 20 12 12 FBK – A11 22 4 4 FBK – A12 17 11+( 2 broken) 10 2 broken in shipping FBK – A13 11 4
18+1 16 16+1 18 wafer data sheets CNM2 17 12 9 17 wafer data sheets CNM3 15 12
TOTAL: 121 71+(2 broken) 51+1
1 with 2 good tiles
Feb,18, 2012, Trento
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CNM FBK
Produced & tested wafers 51 70 Selected wafers 40 31 UBMed wafers 26 26 Green tiles on Selected 203 + 13 (broken) 135
Green tiles with UBM
133 117
Values and table from G. Darbo
Tot: 250
Feb,18, 2012, Trento
Genova and INFN 5
Comparison between FBK and CNM V-Breakdown on Wafer (BARE) (Type A – Good Quality)
Feb,18, 2012, Trento
Genova and INFN 6
Comparison between FBK and CNM Ileak on Wafer (BARE) (Type A – Good Quality) CNM: Ileak current is measured only on the Guard Ring
Feb,18, 2012, Trento
Genova and INFN 7
Sensors are flip-chipped at IZM and then delivered to Genova and Bonn for module assembly and testing.
The qualification of modules consists of four types of tests: INIT: Very preliminary electrical test after assembly to test that all the wire-bonds and connection are properly done. ASSY: Electrical test at ambient temperature, in which is checked the proper basic functioning of the module (e.g. IV Curve, bumps connectivity). Also done the Tuning at working point of 3k𝑓− Threshold and 9BC @ 20k𝑓− . BURN: Module is thermal cycling (-40, +40 °C for 2-3 days) and retested at ambient temperature with the same test of ASSY. FLEX: Complete calibration of a module. All tests are executed at ~ − 10°𝐷.
Feb,18, 2012, Trento
Genova and INFN 8
Feb,18, 2012, Trento
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In the first three batches of bump-bonding were assembled a total of 85 Modules: 67 DC and 18 SC (139 DC and 124 SC flip chipped). We have observed in ~80% of Modules two kinds of bump defects/damage:
Small Rate ~20%, Observed ‘islands’ of unconnected bumps This is probably attributed to the flip chip process
High Rate ~80%, shorted pixel The reason of this problem is not completely understood but results suggests flip chip, in particular large amount of flux left between bumps.
Feb,18, 2012, Trento
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CNM5860-23-03_sensor_center_flux particle_not connected_200x
Too much flux during the flip chip could be the cause of the open bumps. Solution: IZM changed the flip chip process (glycerin as tacking media is used) and uses a different bonder (Panasonic FCB3)
Images by F.Hügging
In the last batch (4) this problem has been resolved! Quality and yield is very good: All 9 DC and 16 SC batch 4 modules tested good No bump bonding problems (shorts and opens)
Feb,18, 2012, Trento
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Example of unconnected bumps (Module 37-23-03)
Images by F.Hügging
Threshold Noise
Feb,18, 2012, Trento
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Example of single bump defects (Module 94-25-01)
Reference: C.Gemme and F.Hügging (ATLAS)
Threshold Cross-Talk with HV Am241 - Occupancy
Double Chip Module Production (Bonn and Genova)
Feb,18, 2012, Trento
Genova and INFN 13 Plot by F. Hügging, Image by G.Darbo
Single Chip Module Production (Bonn and Genova)
Feb,18, 2012, Trento
Genova and INFN 14 Plot by F. Hügging, Image by G.Darbo
Feb,18, 2012, Trento
Genova and INFN 15
2𝜈𝐵 2𝜈𝐵
Feb,18, 2012, Trento
Genova and INFN 16
Type C: Bad Quality Sensor Type A: Good Quality Sensor Measured
Measured on Wafer
Feb,18, 2012, Trento
Genova and INFN 17
Type C: Bad Quality Sensor Type A: Good Quality Sensor Measured
Measured on Wafer
Feb,18, 2012, Trento
Genova and INFN 18
Noise - High Voltage On Noise - High Voltage Off 160 𝒇− 320 𝒇−
Feb,18, 2012, Trento
Genova and INFN 19
Noise - High Voltage On Noise - High Voltage Off 144 𝒇− 210 𝒇−
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Noise - High Voltage On Noise - High Voltage Off 150 𝒇− 235 𝒇−
Disconnected Bumps Disconnected Bumps
The cut on D-noise HV on/off has to be tuned independently for CNM and FBK when more statistics will be available
Feb,18, 2012, Trento
Genova and INFN 21
Operation working point at -20V Here is checked on few samples the expected dependence of Noise Vs HV.
Feb,18, 2012, Trento
Genova and INFN 22
Shadows of the SMDs components and LV test pins are clearly visible. Occupancy of FBK rows and columns edge (barely visible in the right plot) is larger due to lateral depletion in the fence region.
Comparison between FBK and CNM ToT in Source Scan, Cluster and Hit Source: Americium 241
Feb,18, 2012, Trento
Genova and INFN 23
Comparison ToT Cluster Vs ToT Hit
CLUSTER SIZE Clusters Single Hits Clusters Single Hits Preliminary Test
Comparison between FBK and CNM ToT in Source Scan, Cluster and Hit Source: Strontium 90
Feb,18, 2012, Trento
Genova and INFN 24
Comparison ToT Cluster Vs ToT Hit
CLUSTER SIZE Clusters Single Hit Clusters Single Hit Preliminary Test
Feb,18, 2012, Trento
Genova and INFN 25
The module production has just restarted after problems encountered at IZM. Waiting for more statistics to produce systematics distributions for FBK and CNM.
Feb,18, 2012, Trento
Genova and INFN 26
Comparison between FBK and CNM Ileak on Wafer (BARE) FBK CNM Guard ring During the Ileak measure all pixels are connected CNM:The Ileak current is measured only on the guard ring
Feb,18, 2012, Trento
Genova and INFN 27
CNM FBK
From M. Backhaus
For 3D modules (especially CNM) solely Δnoise can not identify open bumps.
Comparison between FBK and CNM ToT in Source Scan, Cluster and Single Pixel Source: Americium 241
Feb,18, 2012, Trento
Genova and INFN 28
Column 0 Central Columns (39-42) Central Columns - All Module
CLUSTER SIZE
Comparison between FBK and CNM ToT in Source Scan, Cluster and Single Pixel Source: Strontium 90
Feb,18, 2012, Trento
Genova and INFN 29
Column 0 Central Columns (39-42)
CLUSTER SIZE
Comparison between FBK and CNM ToT in Source Scan, Cluster and Single Pixel Source: Strontium 90
Feb,18, 2012, Trento
Genova and INFN 30
Column 0 Central Columns (39-42)
CLUSTER SIZE
Comparison between FBK and CNM ToT in Source Scan, Cluster and Single Pixel Source: Americium 241
Feb,18, 2012, Trento
Genova and INFN 31
Column 0 Central Columns (39-42) Central Columns - All Module
CLUSTER SIZE
Comparison between FBK and CNM ToT in Source Scan, Cluster and Single Pixel Source: Strontium 90
Feb,18, 2012, Trento
Genova and INFN 32
Column 0 Central Columns (39-42)
CLUSTER SIZE