Extension of 193 Immersion Lithography Steve Renwick Senior - - PowerPoint PPT Presentation

NIKON PRECISION INC.

Extension of 193 Immersion Lithography

Steve Renwick Senior Principal Engineer, NPI

SOKUDO Breakfast Forum July 14, 2010 2

Overview

EUV Status Bridging to EUV Scanner Requirements for DP NSR-S620D Performance

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Lithography Technology Roadmap

2007 2010 2016 2013 2022 2019 16 22 32 45 65 11 45 nm HP 32 nm HP 22 nm HP 16 nm HP

Water Immersion Water Immersion

S610C

NA 1.30

EUVL EUVL D

• u

b l e P a t t e r n i n g D

• u

b l e P a t t e r n i n g ITRS DRAM ½ Pitch (nm)

S609B

NA 1.07

S620D

NA 1.35

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EUV Infrastructure Schedule

2007 2010 2016 2013 2022 2019 16 22 32 45 65 11

½ Pitch (nm)

ITRS DRAM Aggressive Logic Aggressive NAND

1-2 years required for defect learning (immersion experience) HVM Process Development can begin here. Mask tools available, defect learning begins Mask infrastructure development begins

Aggressive DRAM

Delays in infrastructure continue to push out adoption of EUV

• increased cost and longer ROI for equipment makers

Mask tool availability: Chan, et al., SPIE 2010, February, 2010

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Extension of 193i Before EUV Arrives

Extend single patterning:

– Source mask optimization and custom illumination

Enable 32 nm half pitch and beyond

– Spacer double patterning – Pitch splitting double patterning (LELE, LFLE, etc.) – Line cutting lithography

Tool makers need to support these schemes

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Line Cutting Litho Concept

44 nm HP Patterning Spacer Pitch Doubling

• 44 nm HP

Patterning Spacer Pitch Doubling

• Target

22 nm SRAM Gate Cell Cut Hole Patterning Hole Chemical Shrink

• After Etch

Cut Hole Patterning Hole Chemical Shrink

• After Etch

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• C. Bencher, et al., SPIE 72740G (2009)

1st patterning (LS formation)

+

2nd patterning (Cut)

• Result

Line Cutting Lithography Concept

Down to 19 nm half pitch can be achieved

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S620D – Enabling the Next Generation

Enabling Superior Yield:

– Overlay accuracy to enable DP – CD uniformity

Enabling Affordable Lithography:

– Reduced wafer overhead time – Maximum throughput – Low CoO via multi-generational use of the tool

Enabling Rapid Production Ramps:

– Faster installation – Optimal uptime – Platform to enable reuse

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NA 1.35 Projection Lens Bird's Eye Control Stream Alignment Modular2 Structure

for 2 nm self overlay for 200 wph throughput for 20 day installation

The NSR-S620D Challenge

Streamlign Streamlign Platform Platform

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Bird’s Eye Control

Enabling Superior Yield Enabling Affordable Lithography Enabling Rapid Production Ramps

Bird’s Eye Control Stream Alignment Modular2 Structure

• Hybrid system uses laser

encoders w/interferometers

• Dramatically improves

accuracy and stability

• Targeting 2 nm overlay

capabilities

• Superior focus control

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Stream Alignment

Enabling Affordable Lithography Enabling Rapid Production Ramps

Stream Alignment Modular2 Structure

• Five-Eye FIA
• Straight Line Autofocus
• Greatly reduced wafer
• verhead time
• Targeting throughput up to

200 wph

Enabling Superior Yield

Bird’s Eye Control

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Modular2 Structure

Enabling Affordable Lithography Enabling Rapid Production Ramps

Stream Alignment Modular2 Structure

• Faster installation - 20 day

target

• Simplified maintenance
• Optimal uptime
• Extendible platform to

enable reuse

Enabling Superior Yield

Bird’s Eye Control

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3.3 nm 2.4 0.5 2.4 2.9 nm 1.0 nm

Space CDU Line CDU Budget Spec

2 1

L L − ) 3 ( CDU σ ) 3 ( OL σ

2 1

OL m m − CD control and overlay are critical for DP

Scanner Requirements for DP

32 nm hp DP Budget

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S620D Overlay Stability

Overlay average within lot

• 5
• 4
• 3
• 2
• 1

1 2 3 4 5 1 3 5 7 9 11 13 15 17 19 wafer count ave.[nm] Ave.X Ave.Y

1.80 1.94 Total 3σ 3σY 3σX 20 wafers continuous exp. Common linear terms removed

[nm]

Overlay 3sigma within lot 1 2 3 4 5 1 3 5 7 9 11 13 15 17 19 wafer count 3sigma[nm] 3sigma.X 3sigma.Y

S620D meets overlay requirements for 32 nm hp DP

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Focus Uniformity

10 20 wafer #

14.3 nm, including edge die

50 nm

• 50 nm

3σ [nm] 14.8 15.0 14.9 1 2 3

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Budget vs. S620D Data

S620D data meet the budget requirement

3.3 nm 3.3 2.4 1.9 0.5 0.7 2.4 2.1 2.9 nm 2.5 1.0 nm 1.1

Space CDU Line CDU Budget Spec

2 1

L L − CD ∆ OL ∆

2 1

m m − 32 nm hp DP Budget and Actual Data

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S620D Overall Performance

S620D enables pitch splitting DP

3.3 nm

Space CDU (3σ)

2.5 nm

Line CDU (3σ)

22 nm L/S

Line 1 Line 2 Space 1 Space 2

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Extendible Platform for ArF Immersion

Modular2 Structure allows multigenerational use

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Summary

The industry needs an interim solution for the 32 nm and 22 nm nodes, prior to the HVM development of EUV 193 immersion lithography will be extended by:

– Source optimization and computational lithography – Double patterning – Multiple patterning and cutting lithography

This places severe new requirements on a scanner for overlay and CD uniformity The Nikon S620D enables superior yield, affordable lithography, and rapid production ramps for 32 nm - with extendibility to 22 nm