Exogenesis Corporation Innovations in Surface Processing Applications In Lithography Accelerated Neutral Atom Beam (ANAB) Lithography Workshop 2013 (abstract page 92) 1
Agenda • Company • Applications in Lithography • Surface mechanism • Technology • Conclusion 2
Company • Privately funded company employing platform technology enabling new generation of medical devices, optics and photolithography products. • Vast experience in ion beam technology. • Design, manufacture, and support fully automated HVM tool. • Commercialized technology, with our first unit operating in the field > 1 year. 3
Agenda • Company • Applications in Lithography • Surface mechanism • Technology • Conclusion 4
EUV Lithography mask blank substrate pit defect removal Pit dimensions (~15 total) 2-15 nm 0.160nm Rms 0.151nm Rms FWHM 30-50nm 5
Atomic level smoothing EUV Lithography mask blank substrate After Accelerated Neutral Atom Beam Exogenesis process Ra 1.219 nm Rz 11.221 nm Ra 0.133 nm Rz 1.406 nm 6
Atomic level smoothing UV Optics ‐ Sapphire After Accelerated Neutral Atom Beam Exogenesis process Ra 1.4 nm Rz 13.9 nm Ra 0.11 nm Rz 1.1 nm 7
Atomic level smoothing UV Optics ‐ fused silica CMP (no slurry) Exogenesis process Ra 0.338 nm Rz 13.146 nm Ra 0.170 nm Rz 1.867 nm 8
Atomic level smoothing UV Optics – aluminum mirror Exogenesis process Ra 5.672 nm Rz 47.331 nm Ra 0.595 nm Rz 5.413 nm 9
LBO Crystal Processed with ANAB < 1 Hour ≈ 100 Hours ≈ 2 weeks 1. Removed from package. 2. No processing. 3. Exposed to atmosphere. Ra=0.296nm Rz=3.357nm Ra=3.584nm Rz=35.383nm Ra=5.977nm Rz=75.273nm 1. Removed from package. 2. ANAB processed. 3. Exposed to atmosphere. Ra=0.313nm Rz=16.689nm Ra=0.230nm Rz=9.158nm Ra=0.238nm Rz=7.038nm 10
Reduce light scatter on WDM optical coating stacks Initial Glass After 11
Ultra shallow doping 1-3nm 12
Free standing Ultra ‐ Thin carbon films • Visualized with 30,000x TEM • Measured electron transparency = 0.95 Graphene measured transparency = 0.93 • • ~1 ‐ 3nm thick • Uniform/high quality • Free standing 13
Agenda • Company • Applications in lithography • Surface mechanism • Technology • Conclusion 14
Surface mechanism of ANAB • Nano ‐ scale surface modification • Unique Lateral sputtering effect • Quartz sputter rate (~ 15 ‐ 20 Å/sec) ANAB retains these properties, GCIB’s lateral sputtering but is more sensitive. has been well documented. Cluster ~ 4nm 50nm Pit 15
Agenda • Company • Applications in Lithography • Surface mechanism • Technology • Conclusion 16
ANAB Technology Accelerated Neutral Atom Beam (ANAB): • Vacuum ‐ based particle accelerator. • Low energy particles (20 ‐ 40 eV). • Electrically neutral. • Highly collimated, no divergence. • Non ‐ contact dry process • High density flux rate (1e17 atoms/sec). 30,000kV / 1,000Atoms = 30eV per atom 17
Conclusion • ANAB Applications in Lithography? – Nano defect removal & Atomic level smoothing • EUV mask blank substrate • EUV optics. • ? – Free standing Ultra ‐ Thin carbon films. • Pellicle • Enhanced TEM imaging – Ultra shallow doping 18
Thank you Michael Walsh mwalsh@exogenesis.us 19
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