SLIDE 1
1
2
Agenda
- Company
- Applications in Lithography
- Surface mechanism
- Technology
- Conclusion
Exogenesis Corporation Innovations in Surface Processing Applications - - PowerPoint PPT Presentation
Exogenesis Corporation Innovations in Surface Processing Applications - - PowerPoint PPT Presentation
Exogenesis Corporation Innovations in Surface Processing Applications In Lithography Accelerated Neutral Atom Beam (ANAB) Lithography Workshop 2013 (abstract page 92) 1 Agenda Company Applications in Lithography Surface mechanism
SLIDE 2
SLIDE 3
3
Company
- Design, manufacture, and support fully
automated HVM tool.
- Commercialized technology, with our first unit
- perating in the field > 1 year.
- Privately funded company employing platform technology enabling new
generation of medical devices, optics and photolithography products.
- Vast experience in ion beam technology.
SLIDE 4
4
Agenda
- Company
- Applications in Lithography
- Surface mechanism
- Technology
- Conclusion
SLIDE 5
5
EUV Lithography mask blank substrate pit defect removal
2-15 nm
FWHM 30-50nm
Pit dimensions
(~15 total) 0.151nm Rms 0.160nm Rms
SLIDE 6
6
Atomic level smoothing
EUV Lithography mask blank substrate
Ra 1.219 nm Rz 11.221 nm Ra 0.133 nm Rz 1.406 nm After Accelerated Neutral Atom Beam Exogenesis process
SLIDE 7
7 Ra 0.11 nm Rz 1.1 nm Ra 1.4 nm Rz 13.9 nm
Atomic level smoothing
UV Optics ‐ Sapphire
After Accelerated Neutral Atom Beam Exogenesis process
SLIDE 8
8
Atomic level smoothing
UV Optics ‐fused silica CMP (no slurry)
Exogenesis process Ra 0.170 nm Rz 1.867 nm Ra 0.338 nm Rz 13.146 nm
SLIDE 9
9
Atomic level smoothing
UV Optics – aluminum mirror
Exogenesis process Ra 0.595 nm Rz 5.413 nm Ra 5.672 nm Rz 47.331 nm
SLIDE 10
10
LBO Crystal Processed with ANAB
- 1. Removed from
package.
- 2. No
processing.
- 3. Exposed to
atmosphere.
- 1. Removed from
package.
- 2. ANAB
processed.
- 3. Exposed to
atmosphere.
Ra=0.313nm Rz=16.689nm Ra=0.238nm Rz=7.038nm Ra=0.230nm Rz=9.158nm
< 1 Hour ≈ 100 Hours ≈ 2 weeks
Ra=0.296nm Rz=3.357nm Ra=3.584nm Rz=35.383nm Ra=5.977nm Rz=75.273nm
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11
Reduce light scatter on WDM optical coating stacks
Glass
Initial After
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12
Ultra shallow doping
1-3nm
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13
Free standing Ultra‐Thin carbon films
- Visualized with 30,000x TEM
- Measured electron transparency
= 0.95
- Graphene measured transparency = 0.93
- ~1‐3nm thick
- Uniform/high quality
- Free standing
SLIDE 14
14
Agenda
- Company
- Applications in lithography
- Surface mechanism
- Technology
- Conclusion
SLIDE 15
15
Surface mechanism of ANAB
- Nano‐scale surface modification
- Unique Lateral sputtering effect
- Quartz sputter rate (~ 15‐20 Å/sec)
GCIB’s lateral sputtering has been well documented. 50nm Pit
Cluster ~ 4nm
ANAB retains these properties, but is more sensitive.
SLIDE 16
16
Agenda
- Company
- Applications in Lithography
- Surface mechanism
- Technology
- Conclusion
SLIDE 17
17
ANAB Technology
Accelerated Neutral Atom Beam (ANAB):
- Vacuum‐based particle accelerator.
- Low energy particles (20‐40 eV).
- Electrically neutral.
- Highly collimated, no divergence.
- Non‐contact dry process
- High density flux rate (1e17
atoms/sec).
30,000kV / 1,000Atoms = 30eV per atom
SLIDE 18
18
Conclusion
- ANAB Applications in Lithography?
– Nano defect removal & Atomic level smoothing
- EUV mask blank substrate
- EUV optics.
- ?
– Free standing Ultra‐Thin carbon films.
- Pellicle
- Enhanced TEM imaging
– Ultra shallow doping
SLIDE 19
19