Characterization of CdTe, CdZnTe and GaAs detectors Igor A. Sokolov - - PowerPoint PPT Presentation

NDIP 2008 1

Characterization of CdTe, CdZnTe and GaAs detectors

Igor A. Sokolov Igor A. Sokolov

NDIP 2008 2

Non-steady-state photoEMF

2 B 2 2

k T m 2 1 e 1

J

D

i K K L i

ω

ω ω σ ω ω − Δ = + +

RL LASER Selective amplifier Signal generator Phase modulator

CdTe

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Frequency transfer function

500 1000 1500 2000 1 2 3

|J

ω|, pA

ω/2π, Hz

CdTe,

λ=1.15 μm

500 1000 1500 2000 2 4 6 8 10 12

|J

ω|, pA

ω/2π, Hz

CdZnTe,

λ=1.15 μm

Non-steady-state photo-EMF measured in CdTe and CdZnTe for different light intensities:I0 =3.0, 5.7, 11, 18, 24 mW/cm2. K=5.5×104 m-1, m=0.73.

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References

• 1. M.A. Bryushinin and I.A. Sokolov, Phys. Rev. B 62, 7186 (2000).
• 2. M.A. Bryushinin and I.A. Sokolov, Phys. Rev. B 63, 153203 (2001).
• 3. M. Bryushinin, V. Kulikov, and I. Sokolov, Phys. Rev. B 65, 245204

(2002).

• 4. M. Bryushinin, V. Kulikov, and I. Sokolov, Phys. Rev. B 67, 075202

(2003).

• 5. I.A. Sokolov, Nucl. Instr. Meth. Phys. Res. A 504, 196 (2003).
• 6. M. Bryushinin, V. Kulikov, and I. Sokolov, Phys. Rev. B 71, 165208

(2005).