Heterostructures Heterojunction: e.g. between GaAs (W g ~1.4 eV) - PowerPoint PPT Presentation

Apr 02, 2024 •347 likes •454 views

Heterostructures Heterojunction: e.g. between GaAs (W g ~1.4 eV) and AlGaAs (W g ~1.6-1.9 eV) HBT Heterojunction bipolar tr: - very fast (highly doped base!) - e.g. with AlGaAs and GaAs HBT or with SiGe - more current - faster -

Heterostructures
Heterojunction: e.g. between GaAs (W g ~1.4 eV) and AlGaAs (W g ~1.6-1.9 eV)
HBT � Heterojunction bipolar tr: - very fast (highly doped base!) - e.g. with AlGaAs and GaAs
HBT � …or with SiGe - more current - faster - higher V A
HEMT � High electron mobility tr. (HEMT, or MODFET): fast (electrons don’t move close to the surface, and are in a undoped region)
� FET: performance comparison:
[2015]

Download Presentation

Download Policy: The content available on the website is offered to you 'AS IS' for your personal information and use only. It cannot be commercialized, licensed, or distributed on other websites without prior consent from the author. To download a presentation, simply click this link. If you encounter any difficulties during the download process, it's possible that the publisher has removed the file from their server.

Recommend

Nanomorphology controls in colloidal nanocrystal polymer bulk heterojunction solar

Nanomorphology controls in colloidal nanocrystal polymer bulk heterojunction solar nanocrystal polymer bulk heterojunction solar cells based on non-toxic inorganic acceptors and functional block copolymers functional block copolymers

220 views • 10 slides

Scanning probe lithography on semiconductor heterostructures: Technology and scientific

Scanning probe lithography on semiconductor heterostructures: Technology and scientific applications Thomas Heinzel Heinrich-Heine-Universitt Dsseldorf Motivation and technology Options offered Some application examples 1

466 views • 19 slides

Proximity effects on topological surface: TI/FM heterostructures Ilya Eremin Theoretische

Proximity effects on topological surface: TI/FM heterostructures Ilya Eremin Theoretische Physik III, Ruhr-Uni Bochum NQS Workshop Kyoto, 20.11.2017 Collaborators: Flavio S. Nogueira Jagadeesh Moodera Ferhat Katmis IFW Dresden & RUB

2.64k views • 33 slides

Electrically tunable trion-polaritons in MoSe 2 heterostructures V. Kondratyev 1 , E.Khestanova 1 ,

Electrically tunable trion-polaritons in MoSe 2 heterostructures V. Kondratyev 1 , E.Khestanova 1 , V. Kravtsov 1 ,T.Ivanova 1 ,F.Benimetskiy 1 , A.Samusev 1 ,I. Iorsh 1 1 Department of Physics and Engineering, ITMO University, St.

68 views • 5 slides

Graphene heterostructures: electronic properties and potential applications Leonid Ponomarenko

Graphene heterostructures: electronic properties and potential applications Leonid Ponomarenko School on Anomalous Transport, Superconductivity and Magnetism in Nanosystems BITP , 15 - 20 June 2015, Kiev, Ukraine Graphene Graphite: strong

930 views • 54 slides

Silicon Heterojunction Solar Cells Screen-printing: PECVD: intrinsic Ag front electrode PECVD: p

W INDOW L AYERS FOR S ILICON H ETEROJUNCTION S OLAR C ELLS : Properties and Impact on Device Performance Johannes P. Seif UNSW, Sydney / SPREE Seminar 01.05.2019 Silicon Heterojunction Solar Cells Screen-printing: PECVD: intrinsic Ag front

858 views • 42 slides

Charge transport and recombination in bulk-heterojunction solar cells Ronald sterbacka

Charge transport and recombination in bulk-heterojunction solar cells Ronald sterbacka Department of Physics and Center for Functional Materials bo Akademi University http://www.funmat.fi Finnish-Japanese Workshop on Functional Materials,

278 views • 26 slides

Negative Magnetoresistance in High-Mobility Heterostructures Rolf J. Haug Abteilung

Negative Magnetoresistance in High-Mobility Heterostructures Rolf J. Haug Abteilung Nanostrukturen Institut fr Festkrperphysik Gottfried Wilhelm Leibniz Universitt Hannover nanostrukturen uni hannover Dr. Lina Bockhorn Dr. Eddy

1.79k views • 27 slides

To establish compliance of NGAs with the GAD Budget Policy per GAAs To ascertain whether

3/8/11 GAD Budget Advocacy Forum 1 March 2011 To establish compliance of NGAs with the GAD Budget Policy per GAAs To ascertain whether the objectives of the lawsupport for gender mainstreaming and for ensuring that women benefit

1.6k views • 9 slides

S terling College Required Communication Unqualified opinion GAAS and GAS

PRES ENTATION OF JUNE 30, 2015 AUDITED FINANCIAL S TATEMENTS October 16, 2015 S terling College Required Communication Unqualified opinion GAAS and GAS reasonable but not absolute assurance S ignificant accounting

441 views • 13 slides

EEE23 Low Cost and High Efficiency Si/TMO Heterojunction Solar cell Loh Zhang Chao, Xavier | Lim

EEE23 Low Cost and High Efficiency Si/TMO Heterojunction Solar cell Loh Zhang Chao, Xavier | Lim Hua En Dr Rusli | Dr Ari Bimo Prakoso 1. Rationale behind our research Why we decided to embark on this research 3 Traditional Solar Cells

1.18k views • 26 slides

Photoluminescence Investigation of Bulk GaAsBi on GaAs A. R. Mohmad, F. Bastiman, J. S.

Photoluminescence Investigation of Bulk GaAsBi on GaAs A. R. Mohmad, F. Bastiman, J. S. Ng, J. P. R. David University of Sheffield, UK S. Jin, S. J. Sweeney University of Surrey, UK 2 Outline Introduction Wafer Details

143 views • 12 slides

Non-Uniform Degradation Behavior Across Device Width in RF Power GaAs PHEMTs A. A. Villanueva 1 ,

Non-Uniform Degradation Behavior Across Device Width in RF Power GaAs PHEMTs A. A. Villanueva 1 , J. A. del Alamo 1 , T. Hisaka 2 , K. Hayashi 2 and M. Somerville 3 1 Massachusetts Institute of Technology 2 Mitsubishi Electric 3 Olin College of

462 views • 21 slides

Molecular Dynamics Simulations of Displacement Cascades in GaAs Stephen M. Foiles Computational

Molecular Dynamics Simulations of Displacement Cascades in GaAs Stephen M. Foiles Computational Materials Science and Engineering Dept. Sandia National Laboratories Albuquerque, NM, USA Presented at Session 2: Computational Methods and

396 views • 14 slides

Scintillation detector based on InAs quantum dots in a GaAs semiconductor matrix for charged

Scintillation detector based on InAs quantum dots in a GaAs semiconductor matrix for charged particle tracking or can one build a tracker out of scintillating wafers ? S.Oktyabrsky 1 , M.Yakimov 1 , V.Tokranov 1 , K.Dropiewsky 1 , A.Minns 1 ,

491 views • 18 slides

Scintillating GaAs for the Detection of Electron Recoils from Dark Matter in the MeV Mass Range

Scintillating GaAs for the Detection of Electron Recoils from Dark Matter in the MeV Mass Range Stephen E. Derenzo Lawrence Berkeley National Laboratory New Directions in the Search for Light Dark Matter Particles Fermilab, June 4-7, 2019 1

307 views • 19 slides

Experimental Methods in Transport Physics Prof. Carlo Requio da Cunha, Ph.D. unit: Coherent

Experimental Methods in Transport Physics Prof. Carlo Requio da Cunha, Ph.D. unit: Coherent Transport Coherent Transport P. Drude (1900): N = 1 t 1 N t 2 t i t N i d p P dt = F l mfp A. Sommerfeld

532 views • 24 slides

Spin field effect transistor 2018.12.21

Spin field effect transistor 2018.12.21 Background Moores law : The number of transistors in a dense integrated circuit doubles about every two years

524 views • 29 slides

Welcome to PIXEL 2018 Sponsors Stathes Paganis (NTU), Suen Hou (AS) on behalf of the Organizers

Welcome to PIXEL 2018 Sponsors Stathes Paganis (NTU), Suen Hou (AS) on behalf of the Organizers PIXEL Proceedings, Topics, IAC Nearly 100 par+cipants from EU, America, Japan, China, India 56 ORAL reports, 24 POSTERs , a total of 80

568 views • 11 slides

Anisotropy induces non-Fermi-liquid behavior and nemagnetic order in 3D Luttinger semimetals

Anisotropy induces non-Fermi-liquid behavior and nemagnetic order in 3D Luttinger semimetals Igor Boettcher Simon Fraser U Vancouver Joint work with Igor Herbut IB, Herbut, PRB 93, 205138 (2016) IB, Herbut, PRB 95, 075149 (2017) Outline

606 views • 39 slides

TheVeryForwardRegionofthe ILCDetectors Ch.Grah FCALCollaboration

TheVeryForwardRegionofthe ILCDetectors Ch.Grah FCALCollaboration LectureSeriesofJAI,Oxford Thursday 15/11/2007 Contents TheFCALCollaboration ForwardCalorimetry Overview

847 views • 51 slides

Analysis and Convergent Adaptive Solution of the Einstein Constraint Equations Gantumur

Outline The Einstein field equations Existence results AFEM for the Hamiltonian constraint Analysis and Convergent Adaptive Solution of the Einstein Constraint Equations Gantumur Tsogtgerel University of California, San Diego Part 1: Joint

465 views • 29 slides

Modifications of gravity Constantinos Skordis (Perimeter Institute) GGI, 4 Mar 2009

Modifications of gravity Constantinos Skordis (Perimeter Institute) GGI, 4 Mar 2009 Tensor-Vector-Scalar theory (Sanders 1997, Bekenstein 2004) Ingredients Tensor field (metric) g ab Unit-timelike Vector field A a Scalar field

467 views • 19 slides

Diophantine Geometry and Non-Abelian Reciprocity Laws Minhyong Kim Madrid, December, 2014

Diophantine Geometry and Non-Abelian Reciprocity Laws Minhyong Kim Madrid, December, 2014 Diophantine Geometry: Abelian Case The Hasse-Minkowski theorem says that ax 2 + by 2 = c has a solution in a number field F and only if it has a solution

643 views • 49 slides