SLIDE 1
Heterojunction: e.g. between GaAs (Wg~1.4 eV) and AlGaAs (Wg~1.6-1.9 eV)
Heterostructures Heterojunction: e.g. between GaAs (W g ~1.4 eV) - - PowerPoint PPT Presentation
Heterostructures Heterojunction: e.g. between GaAs (W g ~1.4 eV) - - PowerPoint PPT Presentation
Heterostructures Heterojunction: e.g. between GaAs (W g ~1.4 eV) and AlGaAs (W g ~1.6-1.9 eV) HBT Heterojunction bipolar tr: - very fast (highly doped base!) - e.g. with AlGaAs and GaAs HBT or with SiGe - more current - faster -
SLIDE 2
SLIDE 3
HBT
Heterojunction bipolar tr:
- very fast (highly doped base!)
- e.g. with AlGaAs and GaAs
SLIDE 4
HBT
…or with SiGe
- more current
- faster
- higher VA
SLIDE 5
HEMT
High electron mobility tr. (HEMT, or MODFET): fast
(electrons don’t move close to the surface, and are in a undoped region)
SLIDE 6
FET:
performance comparison:
SLIDE 7
SLIDE 8
SLIDE 9
[2015]