EEE23 Low Cost and High Efficiency Si/TMO Heterojunction Solar cell - - PowerPoint PPT Presentation

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EEE23 Low Cost and High Efficiency Si/TMO Heterojunction Solar cell - - PowerPoint PPT Presentation

EEE23 Low Cost and High Efficiency Si/TMO Heterojunction Solar cell Loh Zhang Chao, Xavier | Lim Hua En Dr Rusli | Dr Ari Bimo Prakoso 1. Rationale behind our research Why we decided to embark on this research 3 Traditional Solar Cells


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SLIDE 1

EEE23

Low Cost and High Efficiency Si/TMO Heterojunction Solar cell

Loh Zhang Chao, Xavier | Lim Hua En Dr Rusli | Dr Ari Bimo Prakoso

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1. Rationale behind

  • ur research

Why we decided to embark

  • n this research
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SLIDE 3

Rationale

○ High Temperature

  • during doping of P-

type and N-type Si junctions

3

○ High Costs ○ High Payback Time

  • f > 6 years

Traditional Solar Cells

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SLIDE 4

Unfavourable for widespread application

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Background of our Research

Transition Metal Oxides such as MoO3, V2O5 & Cu2O have shown favourable properties as P-type Si junction replacements ➢ High Work Functions that help form strong electronic barrier with nSi ➢ Lower Temperature of production ➢ Lower Cost that allows greater deployment ➢ More stable than other organic polymer material

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SLIDE 6

Research Goal

  • To identify which TMO is the best out of the

three to spearhead future research into TMO/nSI Solar Cell research

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SLIDE 7

Methodology

7

Wafer Cutting Cleaning of Samples Characterisatio n of Solar Cell Shadow Mask

  • Silver

Contact

Deposition

  • f layers
  • Back

Contact

  • TMO
  • ITO

Fabrication of Sample Compare results

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SLIDE 8

8

Structure of our Solar Cell

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Some Equipment Used for Fabrication / Characterisation

Electron Beam Evaporation | Radio Frequency Sputtering | Solar Simulator & Machine Machine Keithley Sourcemeter

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Electron Beam Evaporation | Radio Frequency Sputtering | Solar Simulator & Machine Machine Keithley Sourcemeter Deposition of

  • Back Contact - TMO
  • Silver Contacts with Shadow

Mask Deposition of

  • ITO

Obtaining Photovoltaic Parameters to compare between solar cells

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Specifics on how we used the equipment

Solar Simulator & Keithley Sourcemeter 2 Probe Method for more realistic results Power intensity set at 100mW/cm2 with fixed Sample Size of 1 cm2 1. 2.

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3. Characterisation

  • f samples

Values obtained from characterisation and analysis

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4 different PV parameters measured

  • Short Circuit Current

density (Jsc)

  • Open Circuit Voltage

(Voc)

  • Fill factor (FF)
  • Efficiency (PCE)
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Short Circuit Current Density (Jsc)

  • Measures current

at 0V

  • Dependent on

light absorption

  • f solar cell and

carriers generated and collected

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Open Circuit Voltage (Voc)

  • Measures

voltage at 0A

  • Dependent on

saturation current, which depends on recombination

  • f carriers
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Fill Factor (FF)

  • Measures the ratio
  • f maximum power

to Isc x Voc

  • Allows us to

determine the amount of series, shunt resistance in the cell

Maximum Power

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Efficiency (PCE)

  • The ratio of output

to input power, calculated through Pmax/Pin

  • The main point of

comparison between different solar cells

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Results

Data and Analysis

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Results Collected

Structure

Jsc/ mA cm-

2

Voc/V FF/% PCE/% MoO3

27.8 0.570 59.8 9.5

V2O5

26.7 0.568 57.0 8.6

Cu2O

30.1 0.261 37.3 2.9

Without TMO

14.8 0.054 24.3 0.2

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Analysis - Jsc

  • Comparable

values for all 3

Struct ure

Jsc/ mA cm-2 Voc/V FF/% PCE/% MoO3

27.8 0.570 59.8 9.5

V2O5

26.7 0.568 57.0 8.6

Cu2O

30.1 0.261 37.3 2.9

Withou t TMO

14.8 0.054 24.3 0.2

  • Cu2O has a slightly

higher Jsc value, which could be due to higher capability in photon carrier generation

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Analysis - Voc

  • MoO3 has highest

Voc value, suggesting lowest rate of recombination

Struct ure

Jsc/ mA cm-2 Voc/V FF/% PCE/% MoO3

27.8 0.570 59.8 9.5

V2O5

26.7 0.568 57.0 8.6

Cu2O

30.1 0.261 37.3 2.9

Withou t TMO

14.8 0.054 24.3 0.2

  • Cu2O’s low Voc

value may be due to higher recombination current in the cell

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Analysis - FF

  • MoO3 also has a

high FF, which suggests the solar cell has very little series resistance/more shunt resistance

Struct ure

Jsc/ mA cm-2 Voc/V FF/% PCE/% MoO3

27.8 0.570 59.8 9.5

V2O5

26.7 0.568 57.0 8.6

Cu2O

30.1 0.261 37.3 2.9

Withou t TMO

14.8 0.054 24.3 0.2

  • Cu2O’s lower FF

could be due to higher series resistance in cell

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Analysis - PCE

  • MoO3 has the

highest PCE value

  • f 9.5%, showing

its potential

Struct ure

Jsc/ mA cm-2 Voc/V FF/% PCE/% MoO3

27.8 0.570 59.8 9.5

V2O5

26.7 0.568 57.0 8.6

Cu2O

30.1 0.261 37.3 2.9

Withou t TMO

14.8 0.054 24.3 0.2

  • Cu2O’s lower PCE

value of 2.8% was mainly due to the lower Voc and FF values hindering max power

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4. Conclusion

Summary of Analysis and areas for further research

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Conclusion

  • About 20% reduction in

cost

  • MoO3 achieved the best

Voc, FF and PCE values, highlighting its favourable properties for use

  • Despite relatively lower

PCE values, MoO3 displays potential for future research and large improvements

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Areas for future research

  • Vary thickness of ITO

and TMO layers to better optimise solar cell

  • Use single wavelength

analysis to better analyse the structure of the solar cell, absorption probabilities at different sections

  • Utilise alternative

fabrication methods like spin coating