2008 International Workshop on EUV Lithography June 10-12, 2008 - - PowerPoint PPT Presentation

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2008 international workshop on euv lithography june 10 12
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2008 International Workshop on EUV Lithography June 10-12, 2008 - - PowerPoint PPT Presentation

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2008 International Workshop on EUV Lithography June 10-12, 2008 Wailea Beach Marriott Maui, Hawaii Organized by Co-operating Organization www.euvlitho.com 2 0 0 8 I nternational W orkshop on EUVL JSR Sponsors EUV Mask

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SLIDE 1

2008 International Workshop

  • n

EUV Lithography

June 10-12, 2008 ▪ Wailea Beach Marriott

▪

Maui, Hawaii ▪

Organized by Co-operating Organization www.euvlitho.com

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SLIDE 2

2 0 0 8 I nternational W orkshop on EUVL

JSR

Sponsors

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SLIDE 3

EUV Mask Inspection System

  • H. Kinoshita
  • H. Kinoshita 1, 3

1, 3,

, T.

  • T. Yoshizumi,M

Yoshizumi,M. . Osugi Osugi, , J.

  • J. Kishimoto

Kishimoto, T. , T. Sugiyama Sugiyama 2

2, N.

, N. Sakaya Sakaya, K, , K, Hamamoto Hamamoto T. Watanabe

  • T. Watanabe 1, 3

1, 3 1 1University of Hyogo,

University of Hyogo,

2 2HOYA Corporation,

HOYA Corporation,

3 3Asahi Glass Co., LTD, R & D Center

Asahi Glass Co., LTD, R & D Center

4 4CREST

CREST-

  • JST

JST

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SLIDE 4
  • 1. Background
  • 2. EUV microscope system
  • 3. Observation results
  • Resolution
  • Pit defect
  • 4. Summary

Outline

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SLIDE 5

EUV lithography is expected to be introduced into the HV manufacturing at the 32-nm hp node between 2011 and 2013. Defect-free mask fabrication is one of the critical issues for introducing EUVL.

Background

Phase defect

Multilayer

Amplitude defect

glass substrate multilayer

6% 6% 11% 77%

Substrate pits (77%) ML deposition adder (11%) Substrate particles (6%) Handling adder (6%)

Substrate pits are now the major source of blank mask

Ref: P. Kearney et al., 5th International EUVL Symposium, Barcelona, Spain 16-18 Oct. 2006

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SLIDE 6

Schwarzschild optics (30X，NA0.3) X-ray zooming tube (10X~200X) Illumination

  • ptics

X-Y-Z stage NewSUBARU SR

EUV Microscope system

Resolution: 20 nm Total magnification: 300X~6000X

CCD

Specification

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SLIDE 7

X-ray zooming tube (10X~200X) X-Y-Z stage(6025)

Load-lock Chamber 172 nm Source for Mask Cleaning

Schwarzschild optics (30X，NA0.3) SR

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SLIDE 8

Schwarzschild optics

Concave Convex Diameter 62 mm 22 mm Figure error LSFR (1 mm-) 0.41 nm 0.38 nm Surface roughness MSFR (1 mm-1 μm) 0.11 nm 0.14 nm HSFR (1 μm-10 nm) 0.18 nm 0.14 nm

Optical housing WFE: 2.2 nm RMS Delivered from ASML-Tinsley

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SLIDE 9

X-ray zooming tube

Kawasaki Heavy Industries

500 1000 1500 2000 2500 3000 3500 50 100 150 200 250

Magnification Resolution (nm)

Conventional KHI

Resolution 300 nm (High resolution) Field 1 mm□@20X 0.5 mm□@50X

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SLIDE 10

Glass substrate Mo/Si ML

Reflective optics (Schwarzschild) Photocathode (CsI)

EUV

dark region

Mechanism of phase defect inspection

Various incident angle of ML near line edges λ = 2d sinθ

This method inspects a phase defect independent

  • f the surface figure.
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SLIDE 11

Glass substrate multilayer absorber

Resolution of 50 nm is achieved.

300 nm isolated line (1200X) TaBN absorber Mo/Si ML

50 nm

Intensity distribution of the pattern edge

Finished EUVL mask observation

2000 4000 6000 8000 10000 12000 20 40 60 80 100 120 140 Pixel Intensity (arb.)

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SLIDE 12

ESPACER

(20 nm)

ZEP520A

(150 nm)

  • 1. Resist coating
  • 2. Electron beam exposure
  • 4. Dry etching
  • 3. Resist development

Electron beam

  • 5. Resist removing

Formation of programmed phase defects

Glass substrate

  • 6. Multilayer deposition
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SLIDE 13

Width:40nm,60nm,80nm,100nm,120nm,200nm

Width：40nm,Depth： 10nm

AFM image of line patterns on substrate surface (1)

30um

～Before the coating of Mo/Si multilayer～

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SLIDE 14

40nm,60nm,80nm,100nm,120nm,200nm

Line width: 40nm,Depth: 10nm Line width: 60nm, Depth: 15nm

Observation results by EUV Microscope (1)

Line width: 80nm, Depth: 20nm

Marking Marking ～After the coating of Mo/Si multilayer～

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SLIDE 15

Observation results by EUV Microscope (2)

550nm,450nm,350nm,250nm,150nm,100nm,75nm

30um

～After the coating of Mo/Si multilayer～

Line width:150nm,Depth:3nm Line width:100nm,Depth:2.5nm Line width:75nm,Depth:1.5nm

×1800 ×1800 ×1800

M a r k i n g

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SLIDE 16

AFM image of dot pattern on substrate surface (2)

Pattern depth

4nm for 1μm～

200nm Pattern depth：

3nm for 100nm

1μm～100nm

Pattern depth： 2nm@50nm

200nm～50nm

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SLIDE 17

Observation results by EUV Microscope (3)

Marking Marking

100nm,Depth 3nm

printable

2 n m , D e p t h 4 n m 4 n m , D e p t h 4 n m 600nm,Depth 4nm 8 n m , D e p t h 4 n m 1 μ μ m , D e p t h 4 n m 50nm,Depth2nm

unprintable

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SLIDE 18

The summary of phase defect printability(2)

Depth (nm)

10 20 50 100 200

Width (nm)

1 2 5 10

Printable Area Unprintable Area

400

Line Unprintable point : Line Printable point : Dot Unprintable point : Dot Printable point :

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SLIDE 19

Hakseung Han etl.,Proc.of SPIE Vol. 6517 65170B-1

Printable or Non-printable Phase defect Measurement by SEMATECH(2007)

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SLIDE 20

Comparison with SEMATECH and our resullts

10 20 50 100 200

Width (nm)

1 2 5 10

Depth (nm)

Confirmed Area Unprintable Area Printable Phase Defect Area by simulation

Simulation Test Printable

Non-Printable Line &Dot Unprintable : Line & Dot Printable :

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SLIDE 21

Summary

  • 1. We have constructed an EUV microscope for observing

an aerial image of an EUV mask.

  • 2. Using the EUV microscope, images of a finished mask

were observed clearly.

  • 3. For a programmed pit defect of 75-nm width and 1.5-nm

depth could not be observed. Also, dot defect of 50nm wide and 2nm depth could not observed. We conclude the critical dimension of pit on glass substrate is 2 nm in depth.

  • 4. By Comparison with SEMATECH exposure data,

a reliability of EUVM was demonstrated.