[PPT] - The evolution of Vertex Detectors The evolution of Vertex PowerPoint Presentation

SLIDE 1

Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

The evolution of Vertex Detectors The evolution of Vertex Detectors

From Gas to Silicon Strips From Gas to Silicon Strips Better and better Silicon Strips Better and better Silicon Strips From Strips to (Fast, Micro) Pixels From Strips to (Fast, Micro) Pixels (From Of f (From Of f -

line Vertex to On

line Vertex to On-

line Track Seeding)

line Track Seeding) Bigger and bigger Silicon Strip systems: Bigger and bigger Silicon Strip systems: From Strip Vertex detectors, to Strip Trackers From Strip Vertex detectors, to Strip Trackers

SLIDE 2

Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

From Wire Chamber to Silicon Strips From Wire Chamber to Silicon Strips

The 4 LEP installed Silicon Strip Vertex The 4 LEP installed Silicon Strip Vertex Detectors, either single or double Detectors, either single or double- sided, sided, within a couple of years of LEP startup within a couple of years of LEP startup The 4 LEP experiments started with gas chambers, The 4 LEP experiments started with gas chambers, both f or tracking and vertex reconstruction. both f or tracking and vertex reconstruction.

These opened the way f or These opened the way f or precision b precision b- physics at LEP physics at LEP

Upgraded to become better & better, Upgraded to become better & better, Bigger & bigger Bigger & bigger Aleph 1991 Aleph 1991 Aleph 1998 Aleph 1998 Delphi 1998 Delphi 1998

SLIDE 3

Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

Better and better Silicon Vertex detectors Better and better Silicon Vertex detectors

Very low mass systems Very low mass systems Use double sided sensors Use double sided sensors Where ever possible Where ever possible Highly specialized Geometries: Highly specialized Geometries: Very light mechanical structure Very light mechanical structure CF, Be space f rames et c CF, Be space f rames et c Very light electrical services, Very light electrical services, Material displaced outside Material displaced outside Fiducial acceptance region Fiducial acceptance region There are examples There are examples Of this in every HEP lab: Of this in every HEP lab: CLEO, Babar, Belle… CLEO, Babar, Belle… CDF, D0… CDF, D0… More and more imaginative names: More and more imaginative names: LHCb VELO: LHCb VELO: VErtex LOcater VErtex LOcater

SLIDE 4

Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

Pixel Vertex detector f or the LHC Pixel Vertex detector f or the LHC

The region below 20cm is inst rument ed The region below 20cm is inst rument ed with Silicon Pixel Vertex systems with Silicon Pixel Vertex systems The Pixel area is driven by FE chip The Pixel area is driven by FE chip Shape dif f erently optimized f or resolution Shape dif f erently optimized f or resolution ATLAS ~ 50 * 400 mm ATLAS ~ 50 * 400 mm

2 2

CMS ~ 150 * 150 mm CMS ~ 150 * 150 mm2 I P I P

trans trans. . resolution ~ 20

resolution ~ 20 µm f or tracks with P f or tracks with P

t t ~ 10GeV

~ 10GeV With this cell size occupancy is ~ 10 With this cell size occupancy is ~ 10- 4 This makes Pixel seeding the f astest This makes Pixel seeding the f astest Starting point f or track reconstruction Starting point f or track reconstruction Despite Despite the extremely high track density the extremely high track density

93 cm 93 cm 3 c m 3 c m

4 10 4 10 7 pixels pixels

The CMS Pixel Vert ex The CMS Pixel Vert ex The ATLAS Pixel Vert ex The ATLAS Pixel Vert ex

Three barrel layers Three disk layers 2m 2m2 ,

2 , 8 10

8 107 pixels pixels

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Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

Pixel Vertex detectors f or the LHC Pixel Vertex detectors f or the LHC

Highest radiation environment: Highest radiation environment: – Specif ic program of sensor R&D Specif ic program of sensor R&D – Partial depletion, despite High V Partial depletion, despite High Vbias

bias

– n- on

n- n technology

n technology

The “back

The “back- side” of a double side” of a double- sided sensor sided sensor

Uses much of that know

Uses much of that know- how how

Specif ic issues:

Specif ic issues: P- stop design to ensure stop design to ensure pixel biasing & isolation pixel biasing & isolation Open p Open p- stop, “p spray” … stop, “p spray” … – Oxygenated bulk may allow Oxygenated bulk may allow lower bias voltage operation, lower bias voltage operation, especially f or charged hadron especially f or charged hadron induced damage (dominant) induced damage (dominant)

SLIDE 6

Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

PI XEL CHI P WI TH FI NAL ARCHI TECTURE: CMS PI XEL CHI P WI TH FI NAL ARCHI TECTURE: CMS

( submitted Aug. / Sept 2000 in DMI LL ) ( submitted Aug. / Sept 2000 in DMI LL )

~50% pixels of f inal 52x53 pixel ROC

~50% pixels of f inal 52x53 pixel ROC

f inal

f inal Column Drain Architecture Column Drain Architecture

f ast hit scanning mechanism (>GHz)

f ast hit scanning mechanism (>GHz)

double hit capability during DC scan

double hit capability during DC scan

f inal

f inal Double Column Periphery Double Column Periphery

8 timestamp buf f ers / double column

8 timestamp buf f ers / double column

24 pixel data buf f er / double column

24 pixel data buf f er / double column

test chip with 36x40 pixels (~240K transistors)

test chip with 36x40 pixels (~240K transistors)

L1 trigger delay up to 255 bunch crossing

L1 trigger delay up to 255 bunch crossing

f inal

f inal Analog Readout Chain Analog Readout Chain

6 clock cycles per pixel hit

6 clock cycles per pixel hit

analog coded column & pixel address

analog coded column & pixel address

analog readout of pixel pulse height

analog readout of pixel pulse height

missing

missing Control & I nterf ace Block Control & I nterf ace Block !! !!

DAC’s

DAC’s, Voltage Regulators, f ast I 2C etc. , Voltage Regulators, f ast I 2C etc. DM_PSI 41

8. 4mm
8. 4mm

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Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

Noise and Threshold unif ormity: ATLAS Noise and Threshold unif ormity: ATLAS

Bef ore tuning: threshold dispersion = 290 e Af ter tuning: threshold dispersion = 190 e

Mean Threshold ~3200e

SLIDE 8

Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

Status of ATLAS & CMS Pixel Vertex Systems Status of ATLAS & CMS Pixel Vertex Systems

Module hybridization is well advanced Module hybridization is well advanced (including high yield bump (including high yield bump- bonding) bonding)

ATLAS Flex hybrid, bump bonded module

Both collaborations have developed FE chips Both collaborations have developed FE chips with f ull f unctionality (or close to it) with f ull f unctionality (or close to it) Reliable Reliable rad rad- hard implementation is hard implementation is critical critical Honeywell SOI no longer available Honeywell SOI no longer available Unexpected yield problem with DMI LL: Unexpected yield problem with DMI LL: requires re requires re- design of t he ATLAS circuit design of t he ATLAS circuit Concerns a f eature not used in CMS design Concerns a f eature not used in CMS design CMS August ’00 submission: CMS August ’00 submission: f unctionality ~ OK, Yield? f unctionality ~ OK, Yield? Engineering Run winter 01 Engineering Run winter 01- 02: 02: Determine yield, build f ull size modules Determine yield, build f ull size modules ATLAS has made a f irst pixel chip ATLAS has made a f irst pixel chip submission in 0. 25mm I BM technology submission in 0. 25mm I BM technology CMS is preparing such a submission CMS is preparing such a submission For spring 2002 For spring 2002

C- C support

sensor

Flex Hybrid bumps MCC

FE chip FE chip

SLIDE 9

Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

From strip Vertex to strip Tracking From strip Vertex to strip Tracking

Single Single- sided, AC coupled, polysilicon biased sensors have become a matu sided, AC coupled, polysilicon biased sensors have become a mature re technology technology Costs have decreased, and large scale production is now possible Costs have decreased, and large scale production is now possible High level of expertise f or FE I C design and system aspects of O High level of expertise f or FE I C design and system aspects of O(10 (105)

5) channels

channels Move to detectors with a high level of independent tracking capa Move to detectors with a high level of independent tracking capability bility ⇒ A f ew m A f ew m2 : CDF CDF – D0 D0 ⇒ Several * 10 Several * 101m

2 :

ATLAS ATLAS ⇒ A couple * 10 A couple * 102 m

2 2 :

CMS CMS

SLIDE 10

Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

The radiation hard P The radiation hard P-

on
n-
N strip detector

N strip detector

ATLAS, CMS, ROSE … ATLAS, CMS, ROSE …

Single Single-

Sided Lithographic Processing

Sided Lithographic Processing

( AC, Poly ( AC, Poly- Si biasing ) Si biasing )

N Bulk N+ I mplants P+ implants Al Strips “P” Bulk N+ I mplants P+ implants

+++ ++

+++

++

- - - -

++++ +

Surf ace damage

Radiation hardness “recipe” Radiation hardness “recipe”

P- on

n- N sensors work af ter bulk type inversion,

N sensors work af ter bulk type inversion, Provided they are Provided they are biased well above depletion biased well above depletion Match sensor resistivity & thickness to f luence Match sensor resistivity & thickness to f luence To optimize S/ N over the f ull lif e To optimize S/ N over the f ull lif e- time time Follow simple design rules Follow simple design rules f or guard & strip geometries f or guard & strip geometries Use Al layer as f ield plate to remove high f ield Use Al layer as f ield plate to remove high f ield Region f rom Si bulk to Oxide Region f rom Si bulk to Oxide (much higher (much higher Vbreak

break)

Take care with process: especially implants… Take care with process: especially implants… Surf ace damage can Surf ace damage can increase strip capacitance & noise increase strip capacitance & noise Use <100> crystal instead of <111> Use <100> crystal instead of <111>

SLIDE 11

Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

The ATLAS I nner (Tracking) Detector The ATLAS I nner (Tracking) Detector

The region 25 < R < 55cm is The region 25 < R < 55cm is instrumented instrumented with a Silicon Strip tracker (SCT) with a Silicon Strip tracker (SCT) The sensors are single sided p The sensors are single sided p- on

n- n wit h

n wit h I ntegrated AC coupling & I ntegrated AC coupling & PolySi PolySi bias bias They are f abricated on 4” waf ers They are f abricated on 4” waf ers The SCT has act ive area ~ 60m The SCT has act ive area ~ 60m

2

and provides at least 4 st ereo hit s and provides at least 4 st ereo hit s With pitch ~ 80 With pitch ~ 80µm Silicon sensors are arranged back Silicon sensors are arranged back- t o t o- back back at a stereo angle within a module at a stereo angle within a module

The region 60 < R < 110cm is instrumented The region 60 < R < 110cm is instrumented with a Straw Tube tracker with a Straw Tube tracker which provides ~ continuous tracking which provides ~ continuous tracking and incorporates Transition Radiation and incorporates Transition Radiation detectors, f or electron identif ication (TRT) detectors, f or electron identif ication (TRT)

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Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

The Atlas Silicon Tracker (SCT) The Atlas Silicon Tracker (SCT)

Sensor pre Sensor pre- product ion has been product ion has been completed completed Production is now well under way Production is now well under way Modules f inalized & Pre Modules f inalized & Pre- series series module production is under way module production is under way Pre Pre- product ion FE chips under t est product ion FE chips under t est Large scale electrical system verif ication underway, Large scale electrical system verif ication underway, study various grounding & shielding conf igurations study various grounding & shielding conf igurations with encouraging results with encouraging results Need to demonstrate “single component” Need to demonstrate “single component” perf ormance is retained in complex system perf ormance is retained in complex system

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Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

Mechanical structures now well advanced/ f inalized, Mechanical structures now well advanced/ f inalized, detailed optimization of local cooling detailed optimization of local cooling & services int egrat ion are converging & services int egrat ion are converging No excess noise f or Barrel (sub)Sector No excess noise f or Barrel (sub)Sector with respect to single module operation with respect to single module operation

The Atlas Silicon Tracker (SCT) The Atlas Silicon Tracker (SCT)

Binary read Binary readout: on chip discrimination

ut: on chip discrimination

SLIDE 14

Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

CMS Silicon Strip Tracker: SST CMS Silicon Strip Tracker: SST

2,4 m 5 . 4 m

OuterBarrel --

TOB-

Inner Barrel & Disks –TIB & TID -

End Caps –TEC 1&2-

Huge number of silicon Huge number of silicon detectors detectors (rods, petals, shells) (rods, petals, shells) Rad Rad- hard modules and hard modules and electronics electronics Cooling and Cooling and –10 10 oC Alignment Alignment “low” mass “low” mass

SLIDE 15

Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

Design considerations f or CMS SST Design considerations f or CMS SST

Ef f icient & clean track reconstruction is Ef f icient & clean track reconstruction is ensured provided ensured provided occupancy below f ew %

ccupancy below f ew %

At small radii need cell size < 1cm At small radii need cell size < 1cm

2

and f ast (~25ns) shaping time and f ast (~25ns) shaping time This condition is relaxed at large radii This condition is relaxed at large radii ∆P

t/ P

/ P

t t ~ 0. 1*P

~ 0. 1*P

t (P

(P

t in TeV)

in TeV) allows to reconstruct Z to allows to reconstruct Z to µ+µ− with with ∆m

Z < 2GeV up to P

< 2GeV up to P

t ~ 500GeV

~ 500GeV Twelve layers with (pitch/ Twelve layers with (pitch/ √ 12) spatial resolution 12) spatial resolution and 110cm radius give a momentum resolution of and 110cm radius give a momentum resolution of

                          ≈ ∆ Tev p B T L m m pitch p p 1 4 1 . 1 100 12 .

1 2 1

µ

A typical pitch of order A typical pitch of order 100µ 100µm is required in the phi coordinate is required in the phi coordinate To achieve the required resolution To achieve the required resolution Strip length ranges Strip length ranges f rom f rom 10 cm 10 cm in t he inner layers in t he inner layers t o 20 cm t o 20 cm in the outer layers. in the outer layers. Pitch ranges Pitch ranges f rom f rom 80µ 80µm in the inner layers to in the inner layers to 200µ 200µm in t he out er layers in t he out er layers

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Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

Track reconstruction ef f iciency in jets Track reconstruction ef f iciency in jets

Ef f iciency f or particles in a 0. 4 cone around jet axis Ef f iciency f or particles in a 0. 4 cone around jet axis No signif icant degradation compared to single pions No signif icant degradation compared to single pions Loss of ef f iciency is dominated by hadronic interactions Loss of ef f iciency is dominated by hadronic interactions in Tracker material in Tracker material

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Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

Status of CMS Silicon Strip Tracker Status of CMS Silicon Strip Tracker

2000 1600 1200 800 400 25 20 15 10 5

5
10

chan 2 chan 43 chan 107 closed symbols: peak mode: 270 + 38/pF

pen symbols:deconvolution: 430 + 61/pF

APV25 chip: 0. APV25 chip: 0. 25µ 25µ ready f or production ready f or production Radiation insensitive Radiation insensitive Excellent noise perf ormance Excellent noise perf ormance St rip capacit ance ~ 1. 2pF/ cm f or w/ p = 0. 25 St rip capacit ance ~ 1. 2pF/ cm f or w/ p = 0. 25 I ndependent of pit ch and t hickness I ndependent of pit ch and t hickness I nsensitive to irradiation f or <100> crystal I nsensitive to irradiation f or <100> crystal

Use Use 320µ 320µm thick Si f or R < 60cm, m thick Si f or R < 60cm, Lstrip

strip ~ 10cm

~ 10cm Use Use 500µ 500µm thick Si f or R > 60cm, m thick Si f or R > 60cm, Lstrip

strip ~ 20cm

~ 20cm Expected S/ N af ter irradiation Expected S/ N af ter irradiation S/ N ~ 13 f or thin sensors, short strips S/ N ~ 13 f or thin sensors, short strips S/ N ~ 15 f or thick sensors, long strips S/ N ~ 15 f or thick sensors, long strips

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Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

SST Module level Components SST Module level Components

6, 136 Thin sensors 6, 136 Thin sensors 18, 192 Thick sensors 18, 192 Thick sensors

6, 136 Thin detectors 6, 136 Thin detectors (1 sensor / module) (1 sensor / module) 9, 096 Thick detectors 9, 096 Thick detectors (2 sensors / module) (2 sensors / module) 440 m 440 m

2 of silicon waf ers

f silicon waf ers

210 m 210 m

2 of silicon sensors

f silicon sensors

9, 648, 128 strips 9, 648, 128 strips ≡ channels channels 75, 376 APV chips 75, 376 APV chips 3112 + 1512 Thin modules 3112 + 1512 Thin modules (ss ss +ds ds) ) 5496 + 1800 Thick modules 5496 + 1800 Thick modules (ss ss +ds ds) 25, 000, 000 Bonds 25, 000, 000 Bonds

FE FE hybrid hybrid with FE with FE ASICS ASICS Pitch Pitch adapter adapter Silicon Silicon sensors sensors CF frame CF frame

Large scale 6” industrial Large scale 6” industrial sensor production sensor production Automated module Automated module assembly assembly Reliable, High Yield Reliable, High Yield I ndustrial I C process I ndustrial I C process State of the art State of the art Bonding machines Bonding machines

SLIDE 19

Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

Status of CMS Silicon Strip Tracker (SST) Status of CMS Silicon Strip Tracker (SST)

The CMS SST exploit s 6” t echnology: The CMS SST exploit s 6” t echnology: Usef ul surf ace/ waf er ~ 2. 5 * t hat of 4” waf ers Usef ul surf ace/ waf er ~ 2. 5 * t hat of 4” waf ers Large scale high quality sensor production in modern Large scale high quality sensor production in modern I ndustrial lines available f rom more than one vendor I ndustrial lines available f rom more than one vendor

SLIDE 20

Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

0.25m FE chip set: Production waf er layout 0.25m FE chip set: Production waf er layout

Now APVMUX corrected, revised masks can be Now APVMUX corrected, revised masks can be f inalised f inalised Waf er Waf er – Overall size Overall size 200mm 200mm – APV25 die ˜ 400 APV25 die ˜ 400 – APVMUX+PLL die ˜ 100 APVMUX+PLL die ˜ 100

APVMUX APVMUX-

PLL

PLL Test structures Test structures

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Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

APV25 test results APV25 test results

Automatic waf er probing Automatic waf er probing – 9 waf ers probed 9 waf ers probed - 75% yield of perf ect 75% yield of perf ect chips chips

most f ailures at waf er periphery

most f ailures at waf er periphery Two cut waf ers retested as individual die Two cut waf ers retested as individual die – statistics limited: upper limit 1% good die statistics limited: upper limit 1% good die f ailed f ailed – but no bad chips accepted but no bad chips accepted Test time < 2mins/ chip Test time < 2mins/ chip – 1 8inch waf er per probe station per day 1 8inch waf er per probe station per day – can complete testing in ~1 can complete testing in ~1- 2 years 2 years I rradiation results I rradiation results – x- ray, ray, pion pion & neutron & neutron - all excellent all excellent – tests with heavy ions and pions tests with heavy ions and pions

8 chips x 10 LHC years

8 chips x 10 LHC years

low SEU rate, no permanent damage

low SEU rate, no permanent damage

r latch up
r latch up

Typical tested waf er map Typical tested waf er map

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Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

I/O box Glue control box

Assembly & supply plates

ptics

Base plate system Vacuum system Pickup tools Glue disp. Tool Bare gantry Final assembly system Camera support

all the Gantry tools High precision glue dispensing and Pick & Place High precision glue dispensing and Pick & Place Robotic Device: The “Gantry” Robotic Device: The “Gantry”

SLIDE 23

Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

The Gantry in action The Gantry in action

Three TOB f inal Three TOB f inal design modules under design modules under glue curing af ter the glue curing af ter the assembly in a gantry assembly in a gantry centre centre

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Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001 Data Collection before assembling

Request at the operator:
1. Operator name
2. Number of module to assemble
3. Type of sensors number of sensor
Automatic information:
1. Date and time
2. Temperature and humidity

Information after the assembling

Automatic information:
1. Position of the sensors fiducial marks before and after the glue

curing

2. Position of hybrid fiducil marks before and after the glue curing
3. Alignment angle
4. Curing time

Quality control

Automatic information:
1. Comparison with input parameter
2. Validation flag :0: if the module is ok…..
3. Status Valid, not valid, refernce
Request at the operator:
1. comment (the operator can choose among a set of possible

comments)

I nterf ace with Data Base: ready and operational Pattern recognition: ready and implemented

“Gantry See, Gantry Do” “Gantry See, Gantry Do”

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Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

A f ully assembled CMS SST Module (TOB) A f ully assembled CMS SST Module (TOB)

Situation is rapidly evolving Situation is rapidly evolving toward f ull module production toward f ull module production

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Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001 ROD INTEGRATION Aachen Karlsruhe Strasbourg Zurich Wien PETALS INTEGRATION

Aachen Brussels Karlsruhe Louvain Lyon Strasbourg

Brussels Wien Lyon

TEC assembly TEC assembly

CERN

Frames Brussels Si sensors factories Hybrid Strasbourg pitch adapter Brussels hybrid CF carrier

TK ASSEMBLY

CERN Louvain Strasbourg Pisa Perugia Wien Bari Perugia Bari Firenze Torino Pisa Padova TIB-TID INTEGRATION FNAL FNAL

TOB assembly TIB-ID assembly

CERN Pisa Aachen

Karlsr. --> Lyon

Karlsruhe

FNAL

Pisa

Sensor’s QAC Module assembly Bonding & testing Module integration into Mechanics Sub-detector assembly Tracker assembly

CMS SST Assembly Logistics: CMS SST Assembly Logistics: A lot of horse power & a great deal of organization A lot of horse power & a great deal of organization

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Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

Full Link Test: a) components Full Link Test: a) components

First successf ul operation of all pre First successf ul operation of all pre- f inal components in f ull link, including 4 TEC f inal components in f ull link, including 4 TEC- t ype t ype Optohybrids Optohybrids (4x3 f ibres) (4x3 f ibres)

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Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

Full Link Test: b) Results Full Link Test: b) Results

Very encouraging results of pre Very encouraging results of pre- f inal f inal components f or both 25° C and components f or both 25° C and - 10° C at 10° C at f ront f ront- end. end. Slight gain increase at lower temp. Slight gain increase at lower temp. Noise and Linearit y ok at low t emp. Noise and Linearit y ok at low t emp. Ready f or integration into Tracker system Ready f or integration into Tracker system test. test.

1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Link Vout (V)

0.8
0.4

0.0 0.4 0.8 Link Differential Vin (V) 12 10 8 6 4 2 EINL (mV) 25°C

10°C

4.0 3.0 2.0 1.0 0.0 EIN (mV)

0.8
0.4

0.0 0.4 0.8 Link Differential Vin (V) 25°C

10°C

Note: 1MI P=100mV at input Note: 1MI P=100mV at input

1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Vout (V) 8 7 6 5 4 3 2 1 Time (µs) 25°C

10°C

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Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

The CMS Tracker services

5 . 4 m

OuterBarrel –TOB- Inner Barrel –TIB-

End cap –TEC-

Pixel

2,4 m

volume 24.4 m3 running temperature – 10 0C dry atmosphere for YEARS!

Inner Disks –TID-

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Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

10 m long cable channel prototype 10 m long cable channel prototype

26 Electrical Cables

C : cooling pipes C : cooling pipes (C6F14) (C6F14) FG : f lushing gas FG : f lushing gas pipes (N2) pipes (N2) I nner I nsulation f oam 1 cm I nner I nsulation f oam 1 cm C C F G F G C C Aluminum Aluminum enclosure enclosure Heating f oils f or Heating f oils f or power compensation power compensation

Experimental results in good Experimental results in good Agreement with FE calculation Agreement with FE calculation

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Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

TI B Module TI B Module -

Cooling test

Cooling test

Single Single-

Sided Module:

Sided Module: results in agreement with FEM

results in agreement with FEM analysis analysis

Cooling Fluid temperature =

Cooling Fluid temperature = - 25C; 25C;

Test in an isolated box with minimum external heat exchange;

Test in an isolated box with minimum external heat exchange;

Air volume around the module comparable with the f inal conf igura

Air volume around the module comparable with the f inal conf iguration; tion;

Test prototype equal to Milestone 200 TI B modules;

Test prototype equal to Milestone 200 TI B modules;

. Fluid condition (f low) and tube diameter equal to the design v

. Fluid condition (f low) and tube diameter equal to the design values; alues;

Read

Read- out Hybrid Power = 2 W;

ut Hybrid Power = 2 W;
Silicon power dissipated = 0. 7 W;

Silicon power dissipated = 0. 7 W;

Maximum Silicon Temperature =

Maximum Silicon Temperature = - 12. 7 C.

12. 7 C.

Double Double-

Sided Module under test

Sided Module under test

Maximum Silicon temperature close to the minimum value

Maximum Silicon temperature close to the minimum value acceptable ( acceptable (- 10C); 10C);

I mprovements in the interf aces between the two modules are

I mprovements in the interf aces between the two modules are possible and present ly under st udy. possible and present ly under st udy.

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Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

Material Budget Material Budget

Determined f rom detailed GEANT simulation which includes latest

Determined f rom detailed GEANT simulation which includes latest engineering engineering design design Support structures Support structures Cable paths Cable paths

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Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

Material budget: Detail of Modeling Material budget: Detail of Modeling

Care has been taken to model Care has been taken to model localized heavy material (e. g. localized heavy material (e. g. Aluminum f or cooling) Aluminum f or cooling) separately separately Cooling blocks Cooling pipe Attachment to disk ICB

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Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

Light support structures

Light support structures

End cap wheels with holes

End cap wheels with holes → 30 % reduction of material 30 % reduction of material

Cables inside the tracker have Aluminum as conductors

Cables inside the tracker have Aluminum as conductors

For the smaller inner barrel (where the material hurts the most)

For the smaller inner barrel (where the material hurts the most) t he t he “mother cable mother cable” distributing power and signals will be Cu on Kapton distributing power and signals will be Cu on Kapton

Hybrids: choice of Gold on Ceramic

Hybrids: choice of Gold on Ceramic Most dense module component Most dense module component Other technologies (Cu/ Kapton) Other technologies (Cu/ Kapton) discarded as development discarded as development incompatible with construction incompatible with construction schedule schedule Contribution of hybrids to tracker X Contribution of hybrids to tracker X0

Ef f orts to reduce material budget (1) Ef f orts to reduce material budget (1)

SLIDE 35

Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

Cooling pipes of inner detector are Aluminum

Cooling pipes of inner detector are Aluminum

Radii and wall thickness have been minimized as much as possible

Radii and wall thickness have been minimized as much as possible, ,

e. g. TOB arc pipes at end f langes: diameter 6 mm, skin 0. 2 mm
e. g. TOB arc pipes at end f langes: diameter 6 mm, skin 0. 2 mm

was 7. 6 mm, was 7. 6 mm, 0. 2 mm

0. 2 mm
Cooling inserts (Al) are heavy, but cooling requirements are ver

Cooling inserts (Al) are heavy, but cooling requirements are very stringent. y stringent. Realistic cooling tests have been and are perf ormed to see if f u Realistic cooling tests have been and are perf ormed to see if f urther optimization rther optimization is possible. is possible.

Ef f orts to reduce material budget (2) Ef f orts to reduce material budget (2)

SLIDE 36

Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

Radiation Length in the Tracker Radiation Length in the Tracker

Nothing sticks out particularly, it just all adds up… Nothing sticks out particularly, it just all adds up…

SLIDE 37

Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

Radiation Length in the Tracker Radiation Length in the Tracker

X/X0

SLIDE 38

Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

Track f inding ef f iciency (Pions) Track f inding ef f iciency (Pions)

Same ef f iciency def inition as f or muons Same ef f iciency def inition as f or muons Ef f iciency is lower compared to muons due to secondary interacti Ef f iciency is lower compared to muons due to secondary interactions in t he Tracker

ns in t he Tracker

Ef f iciency can be increased by relaxing track selection Ef f iciency can be increased by relaxing track selection

SLIDE 39

Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

Conclusions Conclusions

The t echnology used f or Vert ex det ect ors has evolved The t echnology used f or Vert ex det ect ors has evolved f rom Strips f rom Strips (single or double (single or double- sided) with sided) with O(10 O(105) channels, channels, t o Pixels t o Pixels, with , with O(10 O(107 - 10 108) channels channels Strip technology, developed f or use in Vertex detectors, has evo Strip technology, developed f or use in Vertex detectors, has evolved lved to be deployed in to be deployed in very large scale Tracking detectors very large scale Tracking detectors Currently, most extreme example of this trend in the CMS Silicon Currently, most extreme example of this trend in the CMS Silicon Tracker Tracker These steps f orward have been made possible by combination of : These steps f orward have been made possible by combination of : – Build up of expertise within the HEP community: LEP was a big pa Build up of expertise within the HEP community: LEP was a big part of rt of this this – Extensive and successf ul R&D to understand sensor operation in h Extensive and successf ul R&D to understand sensor operation in high igh f luence environments f luence environments – Moving production of strip sensors to large volume 6” industrial Moving production of strip sensors to large volume 6” industrial lines lines – The ability to substitute “standard” 0. 25mm technology f or custo The ability to substitute “standard” 0. 25mm technology f or custom Radiat ion Hard Front End read Radiat ion Hard Front End readout electronics

ut electronics

SLIDE 40

Marcello Mannelli

The evolution of Vertex Detectors The evolution of Vertex Detectors

Siena October 2001

Conclusions Conclusions

Challenges lying ahead: Challenges lying ahead: Make the LHC Vertex & Tracking detectors as successf ul Make the LHC Vertex & Tracking detectors as successf ul As the LEP Vertex (and Tracking) detectors have been! As the LEP Vertex (and Tracking) detectors have been! The LHC Pixel Vertex and Silicon Strip Trackers suf f er f rom The LHC Pixel Vertex and Silicon Strip Trackers suf f er f rom a great deal of material within the f iducial acceptance region a great deal of material within the f iducial acceptance region This is driven in large part by the high power dissipation and h This is driven in large part by the high power dissipation and high igh current requirements of the current generation of Front current requirements of the current generation of Front-

End

End electronics electronics The next generation of “bigger and bigger, better and better” so The next generation of “bigger and bigger, better and better” solid lid state Vertex and Tracking detectors will probably require import state Vertex and Tracking detectors will probably require important ant break break-

trough' s in

trough' s in low power, low current low power, low current, Front , Front -

End electronics