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Yablonovitch limit PVMD Arno Smets Delft University of Technology Learning objectives How is absorption enhancement limit derived What assumptions underlie this limit Absorption enhancement in a c-Si solar cell Enhancement by


  1. Yablonovitch limit PVMD Arno Smets Delft University of Technology

  2. Learning objectives • How is absorption enhancement limit derived • What assumptions underlie this limit • Absorption enhancement in a c-Si solar cell

  3. Enhancement by texturing Air Silicon

  4. Enhancement by texturing Air Silicon

  5. Enhancement by texturing R Air Silicon L

  6. Enhancement by texturing R Air R Silicon L

  7. Enhancement by texturing and back reflector Air Silicon

  8. Enhancement by texturing and back reflector R * Air Silicon L *

  9. Enhancement by texturing and back reflector R * R * Air Silicon L *

  10. Assumptions theoretical limit Assumptions: Anti reflection coating • R front =0 (implementing surface nano-texture) Scattering at textured interfaces • Lambertian (decoupling front- and backside texture scattering morphologies) Back reflector • R back =1 (replacing metallic back reflector with dielectric back reflector)

  11. Enhancement c-Si solar cell Front nano-texture 1.0 2 µm DBR 0.8 Ag 0.6 A Si Thermal SiO 2 Bulk c-Si 0.4 20 μ m 0.2 2 µm 0.0 400 400 600 600 800 800 1000 1000 1200 1200 1.28 μ m DBR T DBR 2 Wavelength (nm) J PH T DBR = 0.54 mA/cm A Ag 2 J PH A Ag = 0.40 mA/cm Back micro-texture A. Ingenito, O. Isabella, M. Zeman, ACS Photonics , 1, 270−278 (2014) TU Delft

  12. Enhancement c-Si solar cell in practice 1.0 0.8 R, Absorptance, Losses (-) R , Absorptance, Losses [-] 190 µm 0.6 R (3.60 mA/cm 2 ) Emitter (3.81 mA/cm 2 ) Al-BSF (0.06 mA/cm 2 ) 0.4 Si-Al (4.31 mA/cm 2 ) Bulk (32.65 mA/cm 2 ) Simulated EQE (34.68 mA/cm 2 ) 0.2 Measured EQE (34.71 mA/cm 2 ) 0.0 400 500 600 700 800 900 1000 1100 1200 Wavelength (nm) Wavelength [nm] A. Ingenito, O. Isabella, M. Zeman, SOLMAT 123, 17-29, 2014. (TU Delft)

  13. Assumptions: R • R Air R front =0 • Lambertian scattering Silicon • R back =1 L 1.0 R, Absorptance, Losses (-) 0.8 R , Absorptance, Losses [-] R * R * Air 0.6 R (3.60 mA/cm 2 ) Emitter (3.81 mA/cm 2 ) Silicon Al-BSF (0.06 mA/cm 2 ) 0.4 Si-Al (4.31 mA/cm 2 ) Bulk (32.65 mA/cm 2 ) L * Simulated EQE (34.68 mA/cm 2 ) 0.2 Measured EQE (34.71 mA/cm 2 ) 0.0 400 500 600 700 800 900 1000 1100 1200 Wavelength (nm) Wavelength [nm]

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