PVMD
Delft University of Technology
PVMD Arno Smets Delft University of Technology Learning objectives - - PowerPoint PPT Presentation
Yablonovitch limit PVMD Arno Smets Delft University of Technology Learning objectives How is absorption enhancement limit derived What assumptions underlie this limit Absorption enhancement in a c-Si solar cell Enhancement by
Delft University of Technology
(implementing surface nano-texture)
(decoupling front- and backside texture morphologies)
(replacing metallic back reflector with dielectric back reflector)
0.0 0.2 0.4 0.6 0.8 1.0 DBR Ag 600 800 1000 1200 400 TDBR AAg
JPH TDBR = 0.54 mA/cm
2
JPH AAg = 0.40 mA/cm
2
ASi Wavelength (nm)
Bulk c-Si
Thermal SiO2
2 µm Front nano-texture 20 μm 2 µm
Back micro-texture
1.28 μm DBR
600 800 1000 1200 400
Wavelength [nm]
400 500 600 700 800 900 1000 1100 1200
R, Absorptance, Losses [-]
0.0 0.2 0.4 0.6 0.8 1.0 R (3.60 mA/cm2) Emitter (3.81 mA/cm2) Al-BSF (0.06 mA/cm2) Si-Al (4.31 mA/cm2) Bulk (32.65 mA/cm2) Simulated EQE (34.68 mA/cm2) Measured EQE (34.71 mA/cm2)
Wavelength (nm) R, Absorptance, Losses (-)
Wavelength [nm]
400 500 600 700 800 900 1000 1100 1200
R, Absorptance, Losses [-]
0.0 0.2 0.4 0.6 0.8 1.0 R (3.60 mA/cm2) Emitter (3.81 mA/cm2) Al-BSF (0.06 mA/cm2) Si-Al (4.31 mA/cm2) Bulk (32.65 mA/cm2) Simulated EQE (34.68 mA/cm2) Measured EQE (34.71 mA/cm2)
Wavelength (nm) R, Absorptance, Losses (-) L R R Air Silicon
Assumptions:
=0
=1
L* R* R* Air Silicon