SLIDE 1 PVMD
Delft University of Technology
Metal-semiconductor junctions
René van Swaaij
SLIDE 2
Metal and semiconductor band diagram
Evac EF qφsem EF qφm Evac
SLIDE 3
Metal and semiconductor band diagram
Evac EF qφsem qχsem EF qφm Evac
SLIDE 4 Learning objectives
- Make the junction between the metal and
semiconductor
- Schottky barrier junction
- Ohmic junction
SLIDE 5
Forming the junction
Evac EF EF Evac qφsem qχsem qφm
SLIDE 6
Forming the junction
Evac EF qφms = qφm - qφsem EF Evac qφsem qχsem qφm
SLIDE 7
Forming the junction
Evac qφsem qχsem EF qφms EF qφm Evac
SLIDE 8
Forming the junction
EF qφm Evac EF qφms qφsem qχsem
SLIDE 9
Forming the junction
EF qφm Evac EF qχsem qφsem qχsem
SLIDE 10
Forming the junction
EF Evac EF qφm qχsem qφsem qχsem
SLIDE 11
Forming the junction
EF Evac EF qφBn qφm qχsem qφsem qχsem
SLIDE 12
qφBn
Forming the junction
EF Evac EF qφn qφm qχsem qφsem qχsem
SLIDE 13
qφBn
Forming the junction
EF Evac EF qφn qφms = qVbi = q(φBn - φn) qφm qχsem qφsem qχsem
SLIDE 14
qφBn
Forming the junction
EF Evac EF qφn qφms = qVbi = q(φBn - φn) xd qφm qχsem qφsem qχsem
SLIDE 15
xd ρ
SLIDE 16
qNd xd ρ
SLIDE 17
qNd xd ρ
SLIDE 18
qNd xd ρ
Poisson equation
SLIDE 19
qNd xd
Gauss’s law
ρ
Poisson equation
SLIDE 20
qNd xd F ρ
SLIDE 21
qNd xd F Φ ρ
SLIDE 22
qφBn
Forming the junction
EF Evac qφn qφms = qVbi = q(φBn - φn) xd qφm qχsem qφsem qχsem Φ EF
SLIDE 23
Depletion region width
qNd xd ρ
Poisson equation
SLIDE 24
Depletion region width
qNd xd ρ
Poisson equation Depletion region width
SLIDE 25
qφBn
Forming the junction
EF Evac EF qφn qφms = qVbi = e(φBn - φn) xd qφm qχsem qφsem qχsem
SLIDE 26
Schottky junction under forward bias
EF qφm Evac qφsem qχsem EF q(Vbi - Va)
SLIDE 27
qφBn
Schottky junction under forward bias
EF Evac EF qχsem qφm qφsem qχsem q(Vbi - Va)
SLIDE 28
Schottky junction under forward bias
EF Evac EF qφBn qχsem qφm qφsem qχsem q(Vbi - Va)
SLIDE 29
qφBn
Schottky junction under forward bias
EF Evac EF xd qχsem qφm qφsem qχsem q(Vbi - Va)
SLIDE 30
qNd xd ρ
SLIDE 31
qNd xd ρ
SLIDE 32
Depletion region width
Poisson equation Depletion region width
qNd xd ρ
SLIDE 33
qNd xd ρ F Φ
SLIDE 34
Schottky junction under reverse bias
EF qφm Evac qφsem qχsem EF q(Vbi + VR)
SLIDE 35
qφBn
Schottky junction under reverse bias
EF qφm Evac EF qχsem q(Vbi + VR) qφsem qχsem
SLIDE 36
Schottky junction under reverse bias
EF Evac EF qφBn qφm qχsem q(Vbi + VR) qφsem qχsem
SLIDE 37
qφBn
Schottky junction under reverse bias
EF Evac EF xd qφm qχsem q(Vbi + VR) qφsem qχsem
SLIDE 38
In case φm is smaller than φsem
Evac EF qφsem qχsem EF qφm Evac
SLIDE 39
In case φm is smaller than φsem
Evac EF EF Evac qφsem qχsem qφm
SLIDE 40
In case φm is smaller than φsem
EF qφm Evac EF qφsem qχsem
SLIDE 41
In case φm is smaller than φsem
EF qφm Evac EF qφsem qχsem qχsem
SLIDE 42
In case φm is smaller than φsem
EF Evac EF qφm qφsem qχsem qχsem
SLIDE 43 Conclusions
- If work function n-type semiconductor is
smaller than metal work function a Schottky barrier is obtained
SLIDE 44 Summary
- If work function n-type semiconductor is
smaller than metal work function a Schottky barrier is obtained
- If work function n-type semiconductor is larger
than metal work function an ohmic junction is