ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
Particle-Based Simulation of Bio-Electronic Systems Alex - - PowerPoint PPT Presentation
Particle-Based Simulation of Bio-Electronic Systems Alex Smolyanitsky, and Marco Saraniti Center for Computational Nanoscience Arizona State University A RIZONA I NSTITUTE FOR N ANO -E LECTRONICS A RIZONA I NSTITUTE FOR N ANO -E LECTRONICS C
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
computational framework
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
hole Top view 300 nm 300 nm
3 00 nm
Teflon slab
buried electrode (1.25 V)
20 nm 40 nm
driven by DC electrophoresis.
(r = 5 nm) suspended in water (ε = 78.0).
contribution explicitly included in the simulation.
constant potentials, not constant fields.
protonation states of individual residues in α-Hemolysin at a given pH value.
diffusion coefficient, mobility, and settling time used in simulation, respectively: The simulation setup is a 300 nm x 300 nm x 300 nm water-filled box split by a 30 nm thick teflon membrane (ε = 2.0).
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
initial position is calculated at
microseconds.
a 20 nm x 20 nm hole.
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
dij
i j
φ
i j k i j k l
c) 3-D dihedral angle a) simple linear bond b) 2-D bond angle
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
Find potential distribution Calculate electrical fields and forces Update particle velocities and positions Find potential distribution Calculate electrical fields and forces Update particle velocities and positions Correct positions and velocities
Flowchart of the Brownian dynamics simulation tool without (left) and with (right) the constrained dynamics corrections.
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
General Framework
timestep
SHAKE algorithm
LINCS algorithm
angles using artificial bonds and demanding use of angle-constraining potentials rather than artificial bonds
RATTLE and general velocity correction
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
Average number of SHAKE iterations vs. number of bound particles required for convergence to relative SHAKE tolerance of 0.001 for various types of constraints. Verlet unconstrained integrator with free flight timestep of 8 fs used.
number of bound particles
500 1000 1500 2000 2500 3000 3500 20 40 60
bonds, angles, dihedrals constrained bonds and angles constrained bonds constrained
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
time, ns average bound atom energy, eV
0.02 0.04 0.06 0.08 0.1 0.02 0.04 0.06 0.08 0.1
Euler int, velocity correction off (1 fs st Euler int, velocity correction on (1 fs st Verlet int, velocity correction on & off ( Pred/corr int, velocity correction off (4 Pred/corr int, velocity correction on (4 BPTI protein constrained dynamics velo
simulated time [ns] average bound atom energy [eV]
0.02 0.04 0.06 0.08 0.1 0.02 0.03 0.04 0.05 0.06 0.07 Velocity correction off Velocity correction on
Euler unconstrained integrator, 2 fs timestep
simulated time [ns] average bound atom energy [eV]
0.02 0.04 0.06 0.08 0.1 0.02 0.025 0.03 0.035 0.04 0.045 0.05 Velocity correction on Velocity correction off
Verlet unconstrained integrator, 8 fs timestep
simulated time [ns] average bound atom energy [eV]
0.02 0.04 0.06 0.08 0.1 0.02 0.025 0.03 0.035 0.04 0.045 0.05 Velocity correction off Velocity correction on
Predictor-corrector unconstrained integrator, 8 fs timestep
Time evolution of the average energy of the bound atoms for various unconstrained integrator algorithms. After velocity correction, avg. kinetic energy around 30meV for all algorithms. No spurious heating/cooling of molecule.
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
A
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
x [nm] y [nm]
2 4 6 8 10 12 14 2 4 6 8 10 12 14
xy-plane slice z = 6.5 nm
x [nm] y [nm]
2 4 6 8 10 12 14 2 4 6 8 10 12
xy-plane slice z = 7.5 nm
x [nm] y [nm]
2 4 6 8 10 12 14 2 4 6 8 10 12 14
xy-plane slice z = 8.5 nm
x [nm] y [nm]
2 4 6 8 10 12 14 2 4 6 8 10 12 14
xy-plane slice z = 7.0 nm
x [nm]
5 10 15
y [ n m ]
5 10 15
z [nm]
5 10 15
5 15 25 35 45 55 65 75
water ε=78.0 lipid membrane ε=4.0 protein region ε=6.0 bottom contact top contact dielectric constant
3-D dielectric map of the system (left) and dielectric contour planes at various z-coordinates (right).
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
Simulated OmpF conductance vs. KCl concentration compared to experimental data, and simulated ionic selectivity based on currents and ion numbers (right).
*** S. J. Wilk, S. Aboud, L. Petrossian, M. Goryll, J. M. Tang, R. S. Eisenberg, M.Saraniti,
based platform. Journal of Physics Conference Series, 37(1):21-24, 2006.
KCl concentration [M] OmpF trimer conductance [nS]
0.2 0.4 0.6 0.8 1 1 2 3 4 5
BD, εprotein=6.0 experimental data ***
KCl concentration [M] selectivity ratio
0.2 0.4 0.6 0.8 1 1 1.5 2 2.5 3 3.5 4
IK/ICl current ratio NK/NCl ion number ratio
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
axial position [nm]
2 4 6 8 10 12 14
0.2
0.25M KCl 0.5M KCl 1.0M KCl no ions, no bias
channel region Arg-168, Lys-80 constriction zone Asp-113, Glu-117 intracellular region extracellular region
axial position [nm]
2 4 6 8 10 12 14 0.5 1 1.5 2 2.5 3
0.25M KCl, cations 0.25M KCl, anions 0.5M KCl, cations 0.5M KCl, anions 1.0M KCl, cations 1.0M KCl, anions
channel region constriction zone Asp-113, Glu-117 Arg-168, Lys-80 intracellular region extracellular region
Simulated distributions of potential (left) and ionic concentration (right) along the axis of an OmpF monomer for various KCl concentrations.
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
The potassium and chlorine ions are shown in grey and green, respectively. The OmpF monomer is shown as semi-transparent, inserted in lipid membrane (impermeable dielectric slab, not shown). The transmembrane potential is 100mV.
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
mammals
forming voltage sensor (S1-S4) and pore domain (S5 and S6)
voltage, the exact electromechanical process still unknown
Top view (RCSB code 2R9R) Side view
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
XZ-plane slices at y = 5.0 nm of simulated distributions of potential (left) and dielectric constant (right). No added KCl, single Poisson step.
Dielectric constant of protein region and implicit lipid membrane set to 2.0. Dielectric smoothing of the protein-water contact using the results in [1].
Patrice Koehl, and Marc Delarus, Incorporating Dipolar Solvents in Poisson- Boltzmann Electrostatics, Biophysical Journal,
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
4eV-deep potential well in the selectivity filter. Considerable positive charge in the voltage sensor domains.
XY-plane slice at z = 6.5 nm of simulated distribution of potential. No added KCl, single Poisson step.
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
axial position [nm] K
+ ion energy [eV]
K
+ distribution [M]
2 4 6 8 10 12
1
0.5 1 1.5 2
K
+ ion energy [eV]
axial K
+ [M]
selectivity filter accumulation at the mouth
Potential energy of a potassium ion and potassium ion distribution along the channel axis. Bulk KCl concentration 1mM, 40 ns simulation, results averaged over the last 20 ns.
Ion distribution consistent with molecular dynamics simulation results revealing two potassium ions inside the selectivity filter and one at the mouth of KcsA channel with similar selectivity filter [2]. Peaks in ion distribution spatially coincide with near-zero axial field regions.
Dynamics of the KcsA K+ Channel in a Bilayer Membrane, Biophysical Journal, Vol 78, June 2000.
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
200 ns simulated, starting from thermally unstable linear conformation. LINCS bond constraint algorithm with angle-constraining potentials used.
One of the few protein subdomains
microseconds (see, for example, RCSB code 1VII).
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
ARIZONA INSTITUTE FOR NANO-ELECTRONICS
Center for Computational Nanoscience
experiment
effects
channel obtained, consistent with experimental data and MD simulations Future work
adsorption by chemically active solid surfaces in aqueous environment
made and biological structures