Noise Characteriza.on and Filtering in the MicroBooNE LArTPC JINST - - PowerPoint PPT Presentation

noise characteriza on and filtering in the microboone
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Noise Characteriza.on and Filtering in the MicroBooNE LArTPC JINST - - PowerPoint PPT Presentation

Noise Characteriza.on and Filtering in the MicroBooNE LArTPC JINST 12 (2017) no. 08, P08003 Jyo. Joshi Brookhaven Na.onal Laboratory DUNE FD DAQ Design Workshop, 10/30/2017 Outline * Introduc:on * Iden:fica:on of different noise sources


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SLIDE 1

Noise Characteriza.on and Filtering in the MicroBooNE LArTPC

  • Jyo. Joshi

Brookhaven Na.onal Laboratory

DUNE FD DAQ “Design” Workshop, 10/30/2017

JINST 12 (2017) no. 08, P08003

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SLIDE 2

Outline

* Introduc:on * Iden:fica:on of different noise sources * SoBware Noise filtering * Impact of Noise filtering

* Status of Readout Channels

* Residual Noise Level

* Hardware upgrades to mi:gate noise sources

2

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SLIDE 3 Cathode Plane Edrift U V Y Liquid Argon TPC Y wire plane waveforms V wire plane waveforms Sense Wires t Incoming Neutrino Charged Particles

MicroBooNE Readout & Response

MicroBooNE Simulation

Time constant = 1 ms

3

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SLIDE 4

4

Correcting RC Shaping Effect

* There are two RC hardware filters in readout system with 1ms :me constant

  • One in the intermediate amplifier
  • Second just before the ADC input (pedestal-adjus:ng)

* This leads to the nega:ve tail in the signal * When the signal is small, the nega:ve tail is also small and not no:ceable * In case of large signal with long dura:on for example, for collec:on plane in

case of ver:cal muon, this RC circuit leads to a long nega:ve tail

Ticks (0.5us) 2000 4000 6000 8000 ADC Counts 50 100 150 200

Raw Signal

MicroBooNE

Ticks (0.5us) 2000 4000 6000 8000 ADC Counts 50 100 150 200

Corrected Signal

MicroBooNE

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SLIDE 5

5

Possible Noise Sources

* Noise associated with first transistor of the cold ASIC

  • Unavoidable
  • Expected ENC ~500 electrons at LAr temp (for 150 pF)
  • Depends on shaping :me, wire length and TPC geometry

* Noise from warm shaping amplifier & ADC

  • Negligible as compared to first transistor

* Noise from wire bias power supplies

  • Negligible

* Noise from other circuits in readout chain

  • Low frequency coherent noise from voltage regulator

* Noise from cathode HV

  • Anode sensi:vity due to ripple from HV

* Noise from power switching circuits ?

  • Intermi_ent Burst Noise
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SLIDE 6

6

ASIC Inherent noise

Cin = total capacitance at input of the ASIC en = white series noise spectral density tp = peaking :me of an:-aliasing filter

10% increase in ENC at 1 us seUng

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SLIDE 7

7

Excess Noise Sources

Frequency (MHz) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Magnitude (Arbitrary Units)

2

10

3

10

4

10

Example of Excess Noise

s peaking time µ 1

MicroBooNE

Example of Excess Noise

900 kHz Burst Noise Cathode HV Harmonic Noise LV Regulator Noise

Frequency (MHz) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Magnitude (Arbitrary Units)

2

10

3

10

4

10

Example of Excess Noise

s peaking time µ 2

MicroBooNE

Example of Excess Noise

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SLIDE 8

8

Low Frequency Noise from Voltage Regulator

* Low frequency (10 - 30 kHz) coherent noise affec:ng groups of channels

simultaneously

* High correla:on between channels on MB pairs (1 MB = 48U +48V + 96Y)

  • n same service-board (SB) with low voltage regulator for ASICs

* Subtract coherent noise using median ADC value of set of 48 channels at

MB level

* Before subtrac:on, signal region is iden:fied and removed from the

waveform

* Noise level is reduced by a factor for 4-5 for the induc:on and 2-3 for the

collec:on plane

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SLIDE 9

9

HV Power Supply Noise

* It was observed that, some charge got induced on anode wire plane

resul:ng from poten:al varia:ons in cathode

* Anode plane is very sensi:ve to even small poten:al changes at cathode

(which is 2.5m away)

* Series of single frequency noise sources are observed, odd harmonics of

36kHz, which is the fundamental freq. of HV power supply ripple

* Main two single frequency noise components, highest peak (36kHz) and

second highest peak (108 kHz)

* V-plane is shielded by U-wires & Y-plane noise is further a_enuated by V-

wires

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SLIDE 10

10

900 kHz ‘Burst’ Noise

* This high Frequency noise is more prevalent on the downstream side of

the TPC and can be clearly iden:fied in frequency domain

* The source of this noise believed to be field pick-up on wires * This noise can be easily filtered using high freq. (low-pass) filter * More prominent in case of lower shaping :me

Time domain Frequency domain

Ticks (0.5 us) Example of Identified Burst Noise Region MicroBooNE Ticks (0.5 us) Example of Identified Burst Noise Region Example of Identified Burst Noise Region MicroBooNE

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SLIDE 11

11

Filtering HV Power Supply and Low Frequency Noise

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SLIDE 12

12

Impact of Filtering on TPC Signal

* Simulated signal that overlays pulse shapes on TPC data is examined for

signals produced by isolated point-like charges and for signals produced by MIP tracks parallel to the wire plane and perpendicular to given wire * Measured bias is negligible for minimum ionizing par:cle (~ 13K e-)

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SLIDE 13

13

Status of Readout Channels

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SLIDE 14

14

Residual Noise

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SLIDE 15

15

x = parallel noise term including noise from intermediate amplified and ADC digi:za:on y = series noise from transistor gate capacitance & wire-to-ASIC capacitance z = series noise due to wire capacitance and depends on wire length, L

Resul:ng plot: ENC vs. Wire length

(fixed term)

Digi:za:on noise ~ 0.5 ADC

Extracted wire capacitance = (23 ± 1) pF/m Extracted parasi:c capacitance = 87 pF 1 ADC ~ 182 electrons

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SLIDE 16

16

Hardware Upgrades

* Two important hardware upgrades

for noise mi:ga:on

  • New service boards using different

voltage regulator were installed for low frequency coherent noise

  • A second “filter-pot” installed in

driB HV system to reduce cathode HV power supply ripple noise

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SLIDE 17

17

Empirical Noise Model for Simula.on

* Empirical noise model from data (aBer noise filtering)

Gain/Shaping dependent Constant (post-preamp)

* Model parametrized for different wire-lengths and can simply scale (using

electronics response func:on) first “gain/shaping - dependent part” for different ASIC sepngs and quadrature sum constant part

Noise Simula:on Talk @DUNE

  • Coll. Mee:ng
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SLIDE 18

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Conclusions

* MicroBooNE achieved ultra-low noise levels being first large LArTPC

  • pera:ng with cold front-end electronics

* Noise filtering code is implemented in Wire-Cell toolkit and is integrated to

LArSoB via “larwirecell” package (h_ps://wirecell.github.io)

* In terms of data-reduc:on for DUNE FD, more studies need to be done

using realis:c signal and noise simula:ons

* Valida:on of realis:c simula:on in Wire-Cell toolkit is performed for signal

processing paper (in review) and soon be integrated to LArSoB

* Paper with realis:c noise model + signal processing is in EB review

JINST 12 (2017) no. 08, P08003

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SLIDE 19

Backup

19

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SLIDE 20

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Mis-Configured Channels

* Mis-Configured Channels

  • Some channels configured at lower ASIC

gain and shaping :me sepngs (4.7 mV/fC & 1us)

  • Cause believed to be due to damage of the

configura:on signal lines due to electrosta:c discharge

  • Channels can be corrected to nominal

produc:on sepngs (14 mV/fC & 2us) by correc:ng the shaping response

  • At lowest gain, digi:za:on noise (0.5 ADC)

becomes significant

  • ABer correc:ng these channels, noise level

are bit higher due to amplifica:on of digi:za:on noise

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SLIDE 21

21

Shorted Channels

* During commissioning, three signal feedthrough seems to draw more

current than provided by voltage source

* In addi:on, noise increased about 20 :mes for some U-plane channels

and some V-plane channels observed anomalous response

* This behavior can be explained if there is direct DC contact across

different feedthroughs in case a V wire comes in contact with some U wires, though no direct contact between U & V wires is observed during visual scan.

* These U wires can disturb the nearby electric field and can result in

collec:ng the signal. Hence smaller signal amplitude in nearby V and Y wires

* Current vs. bias voltage test at feedthrough facilitated the deriva:on of

number of effected channels

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SLIDE 22

22

Saturation of ASICs

* Intermi_ent dead regions (low RMS) on waveform when wire bias is ON * Iden:fied and filtered out using very low local RMS cut (~20 :me :cks) * Some:mes only some percent of waveform is chirping, in this case we can

recover the unaffected por:on of the waveform

* Adap:ve Baseline technique can be used to recover the baseline * Largely reduced by changing ASIC bias current from 100 pA to 500 pA

* Wire mo:on could be the poten:al source of satura:on

An example U-Plane raw waveform before and a_er filtering