Jelena Ninkovic
New Developments in Silicon Detectors
(at Max Planck Society Semiconductor Lab)
- MPS Semiconductor Lab
- Devices & Selected Applications
Jelena Ninkovic, MPG HLL
- 53. International Winter Meeting on Nuclear Physics, Bormio 2015
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New Developments in Silicon Detectors (at Max Planck Society - - PowerPoint PPT Presentation
New Developments in Silicon Detectors (at Max Planck Society Semiconductor Lab) Jelena Ninkovic MPS Semiconductor Lab Devices & Selected Applications Jelena Ninkovic, MPG HLL 53. International Winter Meeting on Nuclear Physics,
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MPG HLL is the only lab worldwide doing fully depleted silicon radiation sensors with integrated electronics optimized for different scientific projects Located in the south-east of Munich on the Siemens Campus in Neuperlach 30 employees: scientists, engineers and technicians + guest scientists, engineers and students
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cleaning thermal lithography inspection implantation
6” Si full processing line class 1000 to class 1 in certain areas
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plasma and sputter Cu line flip chip assembly and test
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@ HLL: sensor design and fabrication interconnection system/camera design and test
Process simulation Device simulation, 2D and 3D State-of-the-art layout tools Wire bonding, hybrid assembly System test facilities Jelena Ninkovic, MPG HLL
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DEPFET (has both)
n+ contact (0V) p+ contact (-V) Avalanche multiplication Diode Sideward depletion structure First Amp stage in the sensor
τ A I q A C a π τ A C g kT α ENC
L tot f tot m 3 2 2 1 2
2 1 2
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Diodes Strip detectors Silicon drift detectors (SDD)
pnCCDs
MOSFETs JFETs
DEPFETs
p+ contact (0V) n contact (V)
SiMPl
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sequence of dielectric layers deposited on the entrance window variation of material and thickness transmittance tuning to application needs
mechanical protection
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definition of potential pockets by differently reverse-biased diodes charge transport by periodic clocking of shift registers column-parallel readout high frame rate (5 msec @ 200 pixel) integrated 1st FET (1 / column) low noise (3el. ENC) backside illuminated, fully depleted high quantum efficiency Applications
~ cm² … wafer scale
450 µm
Proposed by Lothar Strüder et al., 1987 Jelena Ninkovic, MPG HLL
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„ extended ROentgen Survey with an Imaging Telescope Array “
The main scientific goals are:
3cm x 3cm pnCCDs still on Si-Wafer. The pn CCDs have 384 × 384 pixels in both image and frame store area. Pixel size: 75 x 75 µm2. Frame time: 50 msec (20Hz)
(collaboration partner MP Extraterrestrial Physics)
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Measurements at C Ka (277eV) and Mn Ka (5,9 keV) on flight- CCDs (2cm × 2cm) show the expected energy resolution and low energy response.
384 384
Shadow image of a 450 mm thick silicon baffle with an 55Fe source mounted directly in front of the sensor
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Motivation: development of a sensor for Fast Solar polarimetry (collaboration partner MP Solar System Research) Device characteristics:
Compact vacuum-tight camera housing ~ 18 x 25 x 10cm 3
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Synchrotron light from the National Synchrotron Light Source (NSLS), Brookhaven
Sensors for LCLS (collaboration partner MP Extraterrestrial Physics)
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Requirements of the LCLS
LCLS pnCCD single photon resolution yes yes energy range 0.05 < E < 24 (keV) 0.05 < E < 25 [keV] pixel size (µm) 100 75 (150) sig.rate/pixel/bunch 103 (105) 104 quantum efficiency > 0.8 > 0.8 from 0.3 to 12 keV number of pixels 512 x 512 (min.) 1024 x 1024 frame rate/repetition rate 10 Hz - 120 Hz up to 250 Hz Readout noise < 150 e- (rms) < 30 e- (rms) (2 e- possible) cooling possible
room temperature possible vacuum compatibility yes yes preprocessing no (yes) ? possible upon request
Requirements in FEL radiation applications
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Large area pnCCDs: 30 cm2 1024 x 512 pixel of 75 x 75 mm2 3.7 x 7.8 cm2
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p-MOSFET on fully depleted n-substrate
Applications:
Proposed by Josef Kemmer & Gerhard Lutz, 1987 Jelena Ninkovic, MPG HLL
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Low noise: Spectroscopic X-Ray imaging
High Dynamic range
Thin & small pixel: vertex, low E electron detectors (TEM)
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DEPFET readout
readout sequence
active pixel sensor operation
Amplifier/ digitizer
Rolling shutter read out
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e--: 7 GeV, 2.3 A
Belle II
e+: 4 GeV, 4 A
electron (7GeV) positron (4GeV)
Vertex Detector 2 layers DEPFET + 4 layers DSSD
Vertex Detector upgrade DEPFETs are chosen for the inner layers To be developed by the DEPFET collaboration
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All silicon module
Inner layer Outer layer # ladders 8 12
90mm 123mm Radius 1.4cm 2.2cm Pixel size 50x50 μm2 50x75 μm2 # pixels 1600(z)x250(R-ɸ) Thickness 75 μm Frame/row rate 50 kHz/10 MHz
Requirements:
~20 Mrad (10 years)
0.2 % X0/layer
20 μs DCDB & SWB developed by UNI Heidelberg DHP developed by UNI Bonn
Low mass vertex detectors MCMs with highest possible integration! Thin sensor area EOS for r/o ASICs Thin (perforated) frame with steering ASICs
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Process backside e.g. structured implant
sensor wafer sensor wafer handle wafer handle wafer
Wafer bonding SOI process Thinning of top wafer (CMP) Processing etching of handle wafer (structured)
50mm Si
Thin (50µm-75µm) self-supporting all silicon module
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The SOI appr proach: ch: thin inne ned d all-sil ilic icon n modul dule with th integ
ing
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Mercury composite spacecraft (MCS) MIXS - First Imaging X-ray spectrometer for planetary X-ray fluorescence
Format 1.92 x 1.92 cm2 64 x 64 pixels 300 x 300 mm2 pixel size Energy resolution 200 eV FWHM @ 1 keV QE > of 80 % @ 500 eV Time resolution < 1 ms due to dynamics Radiation hardness ~ 20 krad ionizing 3 x 1010 10 MeV p/cm2 equivalent to 1.11 x 1011 1 MeV n/cm2
DEPFET Macropixel Matrix
Mercury surface as seem by Mariner 10
imaging optics, not just a collimator. Much better spatial resolution! Look inside craters, identify more features!
solid-state detector with excellent energy resolution and low energy threshold. Allows to observe the important lines of Iron, Silicon, Magnesium
(collaboration partner MP Solar System Research)
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Shadow image of a 450 mm thick silicon baffle with an 55Fe source mounted directly in front of the sensor Operating conditions
Trow = 5.2 ms Tframe = 167 ms / frame Framerate ~ 6 kfps Ipixel = 125 mA
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(Misfits)
Example for negative misfit background in raw data spectrum (no splits recovered) for CAMEX Misfits Zero Peak Signals
ratio between readout time and integration time
parallelization
(hybrid pixel sensor)
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Gated PIX (GPIX)
bulk
already collected, but no new charge will be added, as it is collected by sensitive subpixel
InfiniPIX
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~ 15-17cm Athena (the Advanced Telescope for High-Energy Astrophysics), has been proposed as ESA's next-generation X-ray astronomy observatory (Launch slot 2028). To address two key questions in modern astrophysics:
(collaboration partner MP Extraterrestrial Physics)
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Central chip: fast timing and high count rate capability Idea: use infinipix like DEPFET matrix
First prototypes Infinipix DEPFET
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XFEL (e.g. XPCS) DEPFET array system single photon resolution yes yes energy range 0.5< E < 24 (keV) 0.5 < E < 25 [keV]
4 µrad 200 µm sig.rate/pixel/bunch 103 103@10KeV quantum efficiency > 0.8 > 0.8 from 0.3 to 12 keV number of pixels 512 x 512 (min.) 1024 x 1024 frame rate/repetition rate 10 Hz yes, triggerable XFEL burst mode 5 MHz (3.000 bunches) 4.5 MHz Readout noise < 150 e- (rms) < 50 e- (rms) cooling possible
room temperature possible vacuum compatibility yes yes preprocessing no (yes) ? possible upon request 4-side buttability yes yes
Integrating Area Detector
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The internal gate extends into the region below the source Small signals assemble below the channel, being fully effective in steering the transistor current Large signals spill over into the region below the source. They are less effective in steering the transistor current. 200 x 200 mm pixel has been designed and produced
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source drain gate Internal gate
Charge into internal gate Drain current A constant charge is injected at fixed time intervals and the internal gate regions are progressively filled In the experiment the charge is deposited at once but the DEPFET response is the same
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Multi Chip Modules
DEPFET Sensor bump bonded to Readout ASICs Optional Heat spreader Flex Hybrid with passive components and auxiliary ASICs (e.g. voltage regulators) Sensor (512x128 pixels) 2.56x10.24 cm2 16 readout ASICs (64x64) Dead area: 10-15%
21 cm
detector module (512 x 512) Monolithic detector subunit (128 x 512)
Submodule 128x512 Sensor development by MPG HLL System development by DSSC collaboration 2.8 cm
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Goal: develop high speed direct hit low energy electron detector Solution: thin, nonlinear DEPFETs with 80kHz frame rate
(collaboration partner MP Structural Dynamics)
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n+ contact (0V) p+ contact (-V)
Avalanche Photodiode
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Silicon photomultiplier Avalanche photodiode
Operating voltage: «100 V Gain: 105 up to 107 dependence of Gain on Temp.: 0.5% dG/dT
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Silicon photomultiplier Avalanche photodiode
n+ p+ n- non-depleted region n- non-depleted region n- depleted gap region n high field
Conventional SiPMs SiMPl concept
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n+ p+
n- non-depleted region n- non-depleted region n- depleted gap region
n high field
Sensor wafer Handle wafer
SOI wafers
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High homogeneity over big distances! 6 100 cells arrays placed over 6mm distance
High linearity!
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Avalanche Efficiency (1 mm high field region) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 250000 350000 450000 550000 650000 750000 Field (V/cm) Efficiency Electrons Holes
Detection of particles:
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Sensor @ MPG HLL:
Low RC -> very fast
ASIC @ DESY:
Individual cell electronics, Logic, TDC, Photon counter
+
Individual cell electronics, Logic, TDC, Photon counter
Ultra fast particle tracker - High energy physics application Ultra fast single photon sensitive imager – Photon science
Possible applications:
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I showed :
produced at MPS Semiconductor Laboratory pnCCDs, DEPFETs , SiMPl …
used in current projects
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