SIMULATION OF PERIODIC NANOSTRUCTURES FOR DESIGN AND OPTIMIZATION OF PLASMONIC BIOSENSORS
Niccolò Michieli CNISM and Department of Physics and Astronomy «G.Galilei» - University
- f Padua
Nanostructures Group
NANOSTRUCTURES FOR DESIGN AND OPTIMIZATION OF PLASMONIC BIOSENSORS - - PowerPoint PPT Presentation
SIMULATION OF PERIODIC NANOSTRUCTURES FOR DESIGN AND OPTIMIZATION OF PLASMONIC BIOSENSORS Niccol Michieli CNISM and Department of Physics and Astronomy G.Galilei - University of Padua Nanostructures Group LIGHT-MATTER INTERACTION
Niccolò Michieli CNISM and Department of Physics and Astronomy «G.Galilei» - University
Nanostructures Group
a set of useable informations (composition, concentration...)
phenomena exploited to this aim.
can yield important advantages:
free charges oscillations
Biosensors Labeled SERS Hot Spots Fluorescence Light Management Specific Absorption Light Management ... Label-free Refractive index Localized Plasmons Surface Plasmos Surface modification ...
Nanotriangles Nanoholes
Plasmons Surface Plasmons Localized Plasmons
surrounding index changes
(geometrically) small changes in surround
𝜖2𝑭(𝑨) 𝜖𝑨2 + 𝑙0
2𝜁 − 𝑙𝑦 2 𝑭 = 𝟏
𝑙𝑦 = 𝑙0 𝜁1𝜁2 𝜁1 + 𝜁2
𝛼𝟑𝝔 = 𝟏
𝜚 𝑠, 𝜄 = 𝐵𝑚𝑠𝑚 + 𝐶𝑚𝑠− 𝑚+1 𝑄𝑚 cos 𝜄
∞ 𝑚=0
𝛽 = 4𝜌𝑆3 𝜁 − 𝜁𝑛 𝜁 + 2𝜁𝑛
𝑭 = 𝑭𝟏 + 1 4𝜌𝜁0𝜁𝑛 𝑙2 𝒐 × 𝒒 × 𝒐 𝒇𝒋𝒍𝒔 𝒔 + 3𝒐 𝒐 ∙ 𝒒 − 𝒒 1 𝑠3 − 𝑗𝑙 𝑠2 𝒇𝒋𝒍𝒔
𝜁 = −2𝜁𝑛 Resonance!!
Far Field Near Field
Exact solutions of the electromagnetic problem only exists for a few particular cases:
Multipole expansion (quadrupoles, ottupoles,...)
For all other geometries: Discretization (DDA, FEM, FDFD, FDTD) Typical observed features:
500 600 700 800 900 1000 2 4 6 8 10 12 14
Extinction Efficiency Wavelength (nm)
46 48 50 52 54 56 58 60 62 0.0 0.1 0.2 0.3 0.4 0.5 0.6
Reflectance Angle (°)
Sensors SERS Hot Spots Transmission/ Extinction Resonances Peaks Reflection Propagating Modes
2a. 1.
SiO2 NS (30-1000 nm)
Nano Triangles
SiO2 NS (30-1000 nm)
2b.
Nano Triangles Nano Hole Arrays
All the structures taken in count are periodic, with a «honeycomb» lattice.
exagon and is composed by two unit triangles.
infinite semi-spaces.
elements (meshing)
from experimental data (J&C,Palik)
equation) is solved point by point for each frequency:
centers of the two triangles forming the unit cell.
thermal annealing.
and snipped thetrahedra.
The resonance position (and shape) is strongly dependent on the geometry of the triangles, interactions and surrounding media characteristics. To taylor the resonance, the following parameters are considered:
parametrization:
deposition parameters)
annealing)
400 500 600 700 800 900 1000 1100 1200 2 4 6 8 10 12 14 16
Extinction Efficiency Wavelenght (nm)
Base L=200 nm L=300 nm h=30 nm h=45 nm
Larger => Redshift Aspect Ratio Closer to 1 => Blueshift
400 500 600 700 800 900 2 4 6 8 10 12 14
Single d=120nm c-c d=240nm c-c d=360nm c-c exagon l=120nm snip=20nm snip=30nm
Extinction Efficiency Wavelength (nm)
Interactions Snipping Base Prism: L=100 nm; h=10 nm; snip=10 nm, silver
600 800 1000 1200 1 2 3 4 5 6 7 8 Extinction Cross Section (10
2)
Wavelength (nm)
Air Silica Glass Quartz Glass Silica Glass Interface
n=1.45 n=2.05
field: 𝐺
𝑇𝐹𝑆𝑇 = 𝐽𝑇𝐹𝑆𝑇
𝐽0 = 𝐹2 𝜕𝑗𝑜 ∙ 𝐹2 𝜕𝑝𝑣𝑢 𝐹0
4
≈ 𝐹4 𝐹0
4
magnitude.
regions.
needed.
the average can neglect the (low enhancement) glass surface.
400 600 800 1000 1200 0.0 0.2 0.4 0.6 0.8 1.0
Normalized Values Freespace incident Wavelenght (nm)
Max(E)/E0 Ave(E)/E0 Ave(E
4)/E 4
400 500 600 700 800 900 1000 1100 1200 10 1000 100000 1E7
SERS Enhancement Factor Freespace incident Wavelenght (nm)
𝐹𝐺 = 1.5 ∙ 105
Functionalization
600 650 700 750 800 850 1 2 3 4 Extinction Cross Section (10
2)
Freespace incident Wavelenght (nm)
t=0nm t=1nm t=2nm t=5nm t=10nm
600 700 800 900 1000 1100 0.0 0.2 0.4 0.6 0.8 1.0 Absorption (Arb. Units)
Wavelenght (nm)
T=5, Absorption T=10, Absorption T=15, Absorption T=20, Absorption T=30, Absorption
Prism
Functionalization
Prism
𝜖𝜇 𝜖𝑈
𝑈=0
= 3.0 𝜖𝜇 𝜖𝑈
𝑈=0
= 5.8
Optimal Coupling to Plasmons => 𝜇𝑆 = 𝑏 − 𝑐 ∙ 𝑑𝑈
𝜖𝜇 𝜖𝑈
𝑈=0
= −𝑐 ∙ ln (𝑑)
Parameters Lattice Constant Side Lenght Height Snip/Shape Controlled by NS diameter Deposition setup Annealing Effect of Increase Redshift Redshift Blueshift Blueshift Reason Larger Structures AR closer to 1
Less curvature and interaction
Application SERS Refractive Index SENSING Lattice Constant
Dependent on Raman Spectrum of Analytes Dependent on the desired position of
resonance, once fixed other parameters Side Lenght
Longest possible => better t-t coupling
Height Low structures => higher avg field High structures => better coupling to func. Snip/Shape No snip, sharp edges => Hot Spots Moderate snip => more homogeneity Tips Collimation => longer sides, sharper
(no planets) Higher Aspect Ratio, Annilation to lower defects and strongest t-t coupling
Computed quantities:
functionalizations)
sweeps)
Parameters: Value (nm): Lattice Constant (𝒃𝟏) (HCP) 535 Holes Radius (𝑆) 205 Film height (ℎ) 46 87
Substrate Functionalization Film Holes
Angle (deg) Wavelenght (nm) Reflectance
𝜇 = 1140
𝜄
Angle (deg) Wavelenght (nm) Reflectance
𝜇 = 1120
𝜄
Reflectance – h = 46 nm Surface: Nanohole Array on Silica (As) Point Plot: Nanohole with Functionalization
45 50 55 60 65 70 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95
Reflectance Angle (deg)
T=0 nm T=3 nm T=4 nm T=5 nm T=7 nm T=10 nm T=15 nm
Functional- ization T (nm) Dip Angle (deg) 57.0 3 55.7 4 55.0 5 54.3 7 53.6 10 52.3 15 50.4
𝑇𝑚𝑝𝑞𝑓 = −0.44 𝑒𝑓/𝑜𝑛
Functional- ization T (nm) Dip Angle (deg) 59.1 3 58.2 4 58.0 5 57.7 7 57.0 15 54.9
45 50 55 60 65 70 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00
Reflectance Angle (deg)
T=0 nm T=3 nm T=4 nm T=5 nm T=7 nm T=15 nm
𝑇𝑚𝑝𝑞𝑓 = −0.29 𝑒𝑓/𝑜𝑛 Experimental h = 100nm: 𝑇𝑚𝑝𝑞𝑓 = −0.18 𝑒𝑓/𝑜𝑛
400 600 800 1000 1200 0.0 0.2 0.4 0.6 0.8 1.0 400 600 800 1000 1200 0.0 0.2 0.4 0.6 0.8 1.0 400 600 800 1000 1200 0.0 0.2 0.4 0.6 0.8 1.0 400 600 800 1000 1200 0.0 0.2 0.4 0.6 0.8 1.0 400 600 800 1000 1200 0.0 0.2 0.4 0.6 0.8 1.0 400 600 800 1000 1200 0.0 0.2 0.4 0.6 0.8 1.0 400 600 800 1000 1200 0.0 0.2 0.4 0.6 0.8 1.0 400 600 800 1000 1200 0.0 0.2 0.4 0.6 0.8 1.0 400 600 800 1000 1200 0.0 0.2 0.4 0.6 0.8 1.0
Rhole=200nm Rhole=150nm
Wavelenght
Transmittance Reflectance Absorbance
Rhole=100nm Nanohole Array. Lattice constant= 535 nm
Wavelenght Wavelenght Wavelenght Wavelenght Wavelenght Wavelenght Wavelenght Wavelenght
Holes
T= 50 nm T= 100 nm T= 150 nm
650 700 750 800 850 900 950 1000 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
Transmittance Wavelenght (nm) T=0 nm T=3 nm T=4 nm T=5 nm T=7 nm T=10 nm T=15 nm
640 645 650 655 660 0.40 0.42 0.44 0.46 0.48 0.50
Transmittance Wavelenght (nm)
665 670 675 680 685 0.00 0.01 0.02 0.03 0.04 0.05
Transmittance Wavelenght (nm)
860 880 900 920 0.43 0.44 0.45 0.46 0.47
Transmittance Wavelenght (nm)
640 645 650 655 660 0.40 0.42 0.44 0.46 0.48 0.50
Transmittance Wavelenght (nm)
665 670 675 680 685 0.00 0.01 0.02 0.03 0.04 0.05
Transmittance Wavelenght (nm)
860 880 900 920 0.43 0.44 0.45 0.46 0.47
Transmittance Wavelenght (nm)
Thickness (nm) Peak 1 (nm) Dip (nm) Peak 2 (nm) 647.1 670.1 872.5 3 648.0 672.3 877.0 4 648.2 672.9 879.0 5 648.4 673.5 880.5 7 648.8 674.5 884.0 10 649.5 675.8 888.0 15 650.5 677.7 897.0 Feature 𝝁𝟏 (nm) Sensitivity Feature width (nm) 648 0.21 ~40 672 0.44 ~30 877 1.63 ~100
5 10 15 50 52 54 56 58 60 Slope = -0.44 deg/nm
Dip Angle (deg) Functionalization Thickness (nm)
h=46 nm h=87 nm Slope = -0.29 deg/nm
Transmittance, ℎ = 46 𝑜𝑛 Transmittance, ℎ = 87 𝑜𝑛 Reflectance
Method Peak/dip Sensitivity (/nm)
T, ℎ = 46 𝑜𝑛 P1, 𝝁𝟏 = 647 nm 0.21 nm T, ℎ = 46 𝑜𝑛 D1, 𝝁𝟏 = 670 nm 0.19 nm T, ℎ = 46 𝑜𝑛 P2, 𝝁𝟏 = 872 nm 2.09 nm T, ℎ = 87 𝑜𝑛 P1, 𝝁𝟏 = 646 nm 0.21 nm T, ℎ = 87 𝑜𝑛 D1, 𝝁𝟏 = 666 nm 0.44 nm T, ℎ = 87 𝑜𝑛 P2, 𝝁𝟏 = 823 nm 1.63 nm R, ℎ = 46 𝑜𝑛 𝝁𝟏 = 1140 nm
R, ℎ = 87 𝑜𝑛 𝝁𝟏 = 1120 nm
2 4 6 8 10 12 14 16 650 660 670 870 880 890 900 Peak 1 Dip Peak 2
Wavelenght (nm) Thickness (nm)
2 4 6 8 10 12 14 16 640 650 660 670 820 830 840 850 860 Peak 1 Dip Peak 2
Wavelenght (nm) Thickness (nm)
Parameters Lattice Constant Hole Radius Height Controlled by NS diameter RIE Deposition setup Mode Transmittance Reflectance Hole Radius Larger holes => lower absorption Smaller holes => lower dissipation Height Thin film => higher transmittance and better sensitivity Thick film => lower dissipation Thin film => better sensitivity Tips Thin film and large holes Small holes => better conduction => narrower dip Thin film => better sensitivity
NSL
simulations give hints on how to obtain best performaces.
both cases, the agreement with experiment is pretty good, keeping in count the defects on the real samples
Thanks to people, present and past members, of my group: Boris, Carlo, Giovanni P, Giovanni P, Valentina B, Valentina M, Valentina R, Marco, Martina And Tiziana and Giovanni M