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Nanolasers: Current Status of Trailblazer of Synergetics Cun-Zheng - - PowerPoint PPT Presentation
Nanolasers: Current Status of Trailblazer of Synergetics Cun-Zheng - - PowerPoint PPT Presentation
Nanolasers: Current Status of Trailblazer of Synergetics Cun-Zheng Ning cning@asu.edu, http://nanophotonics.asu.edu School of Electrical, Computer, and Energy Engineering Arizona State University Support: ARO, AFOSR, DARPA, NASA, SFAz
cning@asu.edu, http://nanophotonics.asu.edu First laser diode (GaAs) Lincoln Lab 0.5 mm
Miniaturization of Semiconductor Lasers
mm ~ cm scale (1962) 100 nm ~ µm scale (2012)
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Engineering Photon-Semiconductor Interaction
Radiative coupling between light and semiconductor
( )
E
e
ρ
- ( )
ω ρ ph
cv
r ∝
( )
g D e
E E m E − =
2 3 2 * 2 3
2 2 1 h π ρ
( )
n D e
E E m E − = 1 2
* 1
h π ρ
( )
2 * 2
h π ρ m E
D e
=
) ( 2
n D e
E E − = δ ρ
Bulk QW: QWR: QD:
Density of Electronic States Density of Photonic States
( ) ( )
Q V F
c D ph cav ph P
= =
3 2 3
4 3 λ π ω ρ ω ρ
Purcell Enhancement
Size Quantization
( )
3 2 2 3
c
D ph
π ω ω ρ = ( )
( )
2 2
1 1 κ ω ω κ π ω ρ + − =
c cav ph
V
Decreasing Vc
Cavity Size Reduction
Free space: 3D cavity:
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Size Quantization
Density of Electronic States
Engineering the Densities of States
More efficiently use of photons More efficiently use of electrons/holes More efficiently coupling photons and semiconductors
( )
3 2 2 3
c
D ph
π ω ω ρ =
( )
ω ρ cav
ph
Cavity Size Reduction
Density of Photonic States
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Why Nanolasers? From Application Point of View
- Optical and electronic integration, size compatibility with
electronic devices
- On-chip light sources (e.g., micro and nano-fluidic)
- VLSI photonics: more functions in smaller volume
- General trends in nanotechnology development: the
smaller the better
- Other new applications not envisioned yet, but will be
enabled once smaller and smaller lasers are available
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Moore’s Law in Photonics
M.K. Smit, Moore’s law in photonics
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Moore’s Law in Photonics Technology Breakup
M.K. Smit, Moore’s law in photonics
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Moore’s Law for Microelectronics
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Challenges for Nanophotonics
- Size, Size, and Size
a) Passive devices (waveguides): , single mode fiber: 5 µ µ µ µm; silicon wire or other semiconductor nanowire: 100-200 nm b) Active devices: (lasers): gain length required to achieve threshold: 1-100 µ µ µ µm, large footprint, difficult for integrate
- Complexity, diversity, and cost: diversity of devices and
materials, small market share of each device, expensive manufacturing
- Compatibility with silicon for integration with electronics
light emitting materials: non-silicon (III-V, II-VI) such as GaAs, InP
- No silicon light source (external to CMOS)
- …
n 2 / λ >
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Examples of Smallest Lasers…( before 2007)
(what is in common: pure dielectric waveguide structures)
55 nm-think ZnO nanocrystal layer is dispersed on a SiO2 disk of 10 microns in diameter, Liu et al, APL (2004) Erbium doped silica disk of 60 microns in diameter on a silicon stem (Kippenberg, PRA 2006) (optically pumped) InAs/AlGaAs single layer of QD, 60 nW output (Painter group, Opt. Exp. 2006)
substrate nanowire
Park et al. Science 305, 1444 (2004). (Optically pumped, RT-CW, smallest, PC laser, Baba’s group, InGaAsP/InP, Opt. Exp.2007)
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Questions
- Can lasers be made even smaller?
- What is the ultimate size limit?
- How about electrical injection, rather than optical?
- Can you make a laser that is smaller than vacuum
wavelength in all three dimensions (DARPA NACHOS program)?
NACHOS (Nanoscale Architectures for Coherent Hyper-Optic Sources) Goals: Electrical injection, room temperature, subwavelength in all 3- dimensions
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- Bergman and Stockman, PRL 2003
- Stockman and Bergman, Laser Phys, 2004
- Nezhad, Tedz, and Fainman, Opt. Exp. 2004
- Maier, Opt. Comm. 2006
- Miyazaki and Kurokawa, PRL 2006
How to Make Smaller Cavities?
- Pure dielectric cavities are not adequate
- Metallic, especially plasmonic structures offer
potential hope Plasmonics, Spasers, Before 2007….
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Plasmon Photon Coupling
Plasma/Plasmon: Longitudinal excitation of electron motion (in metals or doped semiconductors) Drude model: Surface Plasmon or Surface Plasmon Polariton: Coupled EM wave and plasmon excitation at the interface of a dielectric layer and a metallic layer.
2 2
( ) 1
p
i ω ε ω ω γω = − +
1/2 2 p
Ne m ω ε =
1 2 1 2 z
k c ε ε ω ε ε = +
ε1 ε2
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Surface Plasmon Polariton (SPP)
Near SPP Resonance: 1) Huge wave compression (35 nm) 2) Strong localization ( few nm) 3) Huge loss (3.6 million 1/cm)
Silver Silver Semiconductor
SPP wave along the interface
(eV)
z k i k i
e I I
) ( 2 ′ ′ + ′
=
z
k ′ ′
z
k′
4 . 15 35 540 = = nm nm
eff
λ λ
z eff
k′ = π λ 2
~ nm
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BPP SPP
Lasers, Spasers, and Photon-Plasmon Coupling
SPASERS: Bergman and Stockman,
- Phys. Rev. Lett. 90, 027402 (2003)
ω
k
2
p
ω p
ω
n c k ω =
SP BP
Plasmonicity
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Light Coupling to SPP Mode: Dramatic Purcell Enhancement
InGaN QW-Silver (8nm) by GaN thickness: (Neogi et al, PRB66, 153305(2002) Neogi et al, PRB, 2002
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Feasibility of a Semiconductor-Core Metal-Shell (Jan 2007 SPIE Paper)
Maslov-Ning , 2007
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First Experimental Demonstration of the Semiconductor-Metal Core-Shell Laser
- M. Hill et al. Nat. Photonics, 1, (2007),589
cning@asu.edu, http://nanophotonics.asu.edu Noginov/Shalaev, 2009) 250 nm 230 nm (Wu Group, Berkeley)
(Lieber, Harvard, Park, Korea)
Fainman UCSD)
A Zoo of Nanolaser Designs… after 2007
(What is in Common? Everyone Likes Metals)
Hill , 2007 Chuang-Bimberg Group
Ti/Au Ni/Au Sapphire Alumina Aluminum MQW p-GaN n-GaN PMMA Yang Group
Maslov-Ning , 2007 (Zhang Group, 2009 Hill -Ning 2009 Painter Group 2009
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Summary of Short History and Status
- Design and theoretical study: Maslov and Ning, Proc. SPIE 6468, (2007)64680I
- 1st experimental demonstration: M. Hill et al. Nat. Photonics, 1, (2007),589
- Electrical injection sub-half-wavelength laser: Hill et al, Opt. Exp., 2009
- Metal encased in a doped shell: Noginov et al., 2009
- Wire on a metal surface: Oulton et al., 2009
- Metal-semiconductor disk laser, Parahia et al, APL, 95 (2009) 201114
- Optically pumped lasing at RT: Nezhad et al, Nat. Phontonics, 4, (2010),395
- Nano patch laser: Yu et al., Opt. Exp. , 18 (2010) 8790
- Nano pan laser: Kwon et al. (2010), Nano. Lett, 10, (2010),3679
- Metallic cavity VCSEL, RT operation, Lu et al, Appl. Phys. Lett, 96, 251101 (2010)
- Goals: Sub-wavelength, CW RT operation, electrical injection
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Semiconductor-Metal Core-Shell Nanolaser
InP Subs. p-InP InGaAs Ag Si3N4 n-InP Ti/Pt/Au p-cntct polyamide n-contact 500 300 500 nm
- Circular pillars: diameters ~280nm to 500nm
- Rectangular pillars: 6 and 3 micron long; core width
~80nm +/- 20nm to ~340nm
Hill, Marell, Leong, Smalbrugge, Zhu, Sun, Veldhoven, Geluk, Karouta, Oei, Nötzel, Ning, Smit, Opt. Exp.,17, 11107 (2009)
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The thinnest electrical injection laser ever demonstrated !
1250 1300 1350 1400 1450 1500 1550 1 2 3 4 5 6 7 x 10
4
Wavelength (nm) Intensity (counts) Run6 row 1 dev #17, 10K, 130uA
50 100 150 200 250 1 2 3 4 5 6 x 10
5
Total light output vs current Run 6 row 1 dev #18 10K current (microamps) Intensity (counts)
Lasing in a Silver-Coated 90+40 nm-Thick Pillar: (thickness below half-wavelength limit)
90nm
1300 1350 1400 1450 1500 50 100 150 200 250 300 350 400 450 wavelength (nm) Intensity (counts) Run6 row 1 dev #17, 10K 40 microamps 60 microamps 80 microamps 100 microamps
Optical thickness = 3.1X90 + 2X20X2 + 2X10X2 = 400 nm < DL nm 670 2 / = = λ
Hill, Marell, Leong, Smalbrugge, Zhu, Sun, Veldhoven, Geluk, Karouta, Oei, Nötzel, Ning, Smit, Opt. Exp.,17, 11107 (2009)
(Semicond.) (Dielectric) (Metal)
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More Recent Progress on Nanolasers with
2009, pulse, LT
V < λ λ λ λ3
2012, CW, RT final goal!
0.0 0.5 1.0 1.5 2.0 2 4 6 8 10
Current (mA) Integrated intensity (a.u.)
1 2 3 4 5 6 7
linewidth (nm)
A
2011, CW 260K 2012, CW, RT wide linewidth
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Disappearance of Threshold in Nanolasers
0.0000 0.0004 0.0008 0.0012 0.00E+000 5.00E+014 1.00E+015 photon density current (uA) 1e-4 1e-3 1e-2 0.1 0.2 0.4 0.6 0.8 1.0
I L ∝ I L ∝
18
I L ∝
1E-7 1E-6 1E-5 1E-4 1E9 1E10 1E11 1E12 1E13 1E14 1E15 Intensity Current (A)
1e-3 1e-2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
β =
Thresholdless? Yes.
But approaching zero (lasers)? or infinity (LED)?
V ∝ β 1
Similar to disappearance of phase transitions in finite or lower dimensional systems, threshold becomes increasingly soft and disappears eventually in nanolasers as size decreases
β β β β= = = =
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Photon Statistics Near Threshold
Gies et al, PRA ,75, 013803,2007
2 ) 2 (
) ( ) ( ) ( ) ( t I t I t I g τ τ + =
thermal light
2 ) (
) 2 (
= g
laser light
1 ) (
) 2 (
= g
Threshold infinity?
There seems to be a more fundamental limitation (beyond gain requirement and cavity mode etc) to how small laser can be made: When size becomes too small, we cannot make a laser with the coherent state emission
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Further on Nanolasers…
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Summary
- Nanolsaer research is driven both by the engineering
- f photonic and electronic densities of states and by
future applications in nanophotonic integrated systems
- Plasmonic structures provide an interesting means
for the cavity miniaturization to reach nanoscale
- There seems to be a fundamental limit in terms of
how small a laser cavity can be: when the cavity is so small that spontaneous emission coupling to the lasing mode is approaching 100%, the threshold becomes increasingly high!
cning@asu.edu, http://nanophotonics.asu.edu