[PDF] - ME 645: MEMS: ME 645: MEMS: Design Fabrication Design Fabrication PDF Document

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ME 645: MEMS: ME 645: MEMS: Design Fabrication Design Fabrication

Lecture 19:Processes and Equipments for MEMS at NanoFab IITB

Design, Fabrication Design, Fabrication and Characterization and Characterization

P.S. Gandhi P.S. Gandhi Mechanical Engineering Mechanical Engineering Mechanical Engineering Mechanical Engineering IIT Bombay IIT Bombay

PRASANNA S GANDHI gandhi@me.iitb.ac.in PRASANNA S GANDHI gandhi@me.iitb.ac.in

Acknowledgements: Anand Savalia and CEN (Center of Excellence in Nanoelectronics)

RCA (Radio Corporation of RCA (Radio Corporation of America) Cleaning Process America) Cleaning Process

M j t M j t

Developed by W Kern in 1965

Major steps: Major steps: Organic clean

Organic clean – – Removal of organic Removal of organic contaminants RCA 1 contaminants RCA 1

Ionic clean

Ionic clean – – Removal of heavy metal atomic Removal of heavy metal atomic and ionic contaminants RCA 2 and ionic contaminants RCA 2

Oxide strip

Oxide strip – removal of thin oxide after each of removal of thin oxide after each of the above the above

VIMP: Dangerous chemicals safety precautions

PRASANNA S GANDHI gandhi@me.iitb.ac.in PRASANNA S GANDHI gandhi@me.iitb.ac.in

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RCA Cleaning Process RCA Cleaning Process

Prep: Removal of grease and oil

Salient procedural details

Prep: Removal of grease and oil Prep: Removal of grease and oil

H2SO

SO4 at 70 deg for 15min followed by 3 times DI at 70 deg for 15min followed by 3 times DI water rinse water rinse

HF dip 30 sec followed by 3 times DI water

Organic clean

Organic clean -

RCA 1

RCA 1

NH

NH4OH : H OH : H2O2: DI water 1:2:7 at ~ 50deg for ~ 7 min : DI water 1:2:7 at ~ 50deg for ~ 7 min

4 2 2

Cool for ~ 10 min followed by 3 times DI water rinse

HF dip 30 sec followed by 3 times DI water

PRASANNA S GANDHI gandhi@me.iitb.ac.in PRASANNA S GANDHI gandhi@me.iitb.ac.in

RCA Cleaning Process RCA Cleaning Process

Ionic clean

Ionic clean – Removal of heavy metal atomic Removal of heavy metal atomic

Salient procedural details

Ionic clean Ionic clean Removal of heavy metal atomic Removal of heavy metal atomic and ionic contaminants RCA 2 and ionic contaminants RCA 2

HCL : H

HCL : H2O2: DI water 1:2:7 at ~ 50deg for ~ 5 min : DI water 1:2:7 at ~ 50deg for ~ 5 min

Cool for ~ 7 min followed by 3 times DI water rinse

HF dip 30 sec followed by 3 times DI water

PRASANNA S GANDHI gandhi@me.iitb.ac.in PRASANNA S GANDHI gandhi@me.iitb.ac.in

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RCA Cleaning Process RCA Cleaning Process

Video of the process: Observe the way its carried out

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Spinning Process Spinning Process

Pictures of the equipment

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Spinning Process Spinning Process

Video of the process: Observe the way its carried out

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Lithography Lithography

Pictures of the equipment: Double sided aligner

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Direct Laser Direct Laser Writer Writer

Pictures of the equipment: Lithography

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El t El t Electron Electron Beam Beam Lithography Lithography

Pictures of the equipment: Lithography

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Lithography

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Metal Sputter System Metal Sputter System

Pictures of the equipment: Sputtering

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Dielectric Sputter System Dielectric Sputter System

Pictures of the equipment: Sputtering

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Electron Beam Evaporator Electron Beam Evaporator

Pictures of the equipment: Evaporator

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Thermal Thermal

Pictures of the equipment: Evaporator

Thermal Thermal Evaporator Evaporator

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Thermal Thermal Thermal Thermal Evaporator Evaporator

Target and the heater

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Oxidation Furnace Oxidation Furnace

Pictures of the equipment: Evaporator

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Thank You Thank You

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