Long Range and Low Powered RFID Tags with Tunnel Diode F. Amato, C. - - PowerPoint PPT Presentation

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Long Range and Low Powered RFID Tags with Tunnel Diode F. Amato, C. - - PowerPoint PPT Presentation

May 01, 2023 186 likes •529 views

Long Range and Low Powered RFID Tags with Tunnel Diode F. Amato, C. W. Peterson, M. B. Akbar, G. D. Durgin School of Electrical and Computer Engineering Georgia Institute of Technology This work was supported, in part, by NSF Grant ECCS

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SLIDE 1

Long Range and Low Powered RFID Tags with Tunnel Diode

  • F. Amato, C. W. Peterson, M. B. Akbar, G. D. Durgin

School of Electrical and Computer Engineering Georgia Institute of Technology

1

This work was supported, in part, by NSF Grant ECCS #1408464

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SLIDE 2

What if we had a long range RFID tag?

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SLIDE 3

Reflection amplifiers

Reflection amplifiers are active devices that, when properly biased, display a negative resistance (-R).

> 1

1 2

M = 0.25 M = 1 M > 1

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SLIDE 4

Key accomplishments

  • Sensitivity to impinging RF signals as low as -90 dBm at 5.8 GHz
  • Amplification gain of 40 dB with a biasing power of only 29 μW.
  • The tag implements On-Off keying with Manchester encoding
  • A range of 22.3 m has been achieved and tested and higher

ranges are possible.

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SLIDE 5

Performances

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10-2 10-1 100 101 102 103 5 8 11 14 17 20 23 26 29 32 35 38 41 44 Bias Power [mW] Gain [dB] State of the art for reflection amplifiers This work: tunnel diode-based reflection amplifiers

Kimionis2014 Chan2013 Chan2011 Lazaro2013 Cantu2008 Cantu2006 Dalman72

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SLIDE 6
  • 0.05

0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45

  • 0.6
  • 0.5
  • 0.4
  • 0.3
  • 0.2
  • 0.1

0.1 0.2 0.3 0.4 0.5 0.6 Tunnel Diode IV curve V [V] I [mA]

Tunnel Diode IV curve I [mA] V [V]

Quantum tunneling

> 1

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SLIDE 7

Summary of previous results

5 5.2 5.4 5.6 5.8 6

  • 180
  • 130
  • 80
  • 30

20 70 120 170

Freq [GHz]

s11 phase [deg] Tunnel diode with 0 V bias Tunnel diode with 80 mV bias

A 45 μW Bias Power, 34 dB Gain Reflection Amplifier Exploiting the Tunneling Effect for RFID applications. Amato, Peterson, Degnan, Durgin. RFID Conference 2015, San Diego.

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SLIDE 8

A new RFID tag paradigm

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DC block RFchoke tunnel diode Reflection Amplifier

Charge Pump

  • r Battery

Demodulator Microcontroller

modulated DC bias RFin RFout

Power Frequ ency fc Power Frequ ency fc fls fus fm

a) b)

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SLIDE 9

Improvements to our previous design

Tunnel diode Model MBD5057-E28, by Cobham Metelics

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C1 Tunnel Diode RFin VBias Bias Tee Tuning stub

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SLIDE 10

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C1 Tun n el Dio de RFin VBi

a s

BiasTee Tun ing st u b

  • Used bias powers: 29 μW
  • Input frequencies: 5.8 GHz

Improvements to our previous design

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SLIDE 11

Improvements

  • Used bias powers: 29 μW
  • Input frequencies: 5.8 GHz
  • Max gain: 43 dB @ -94 dBm of RF input power

resulting in very high sensitivity

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C1 Tun n el Dio de RFin VBi

a s

BiasTee Tun ing st u b

  • 100
  • 90
  • 80
  • 70
  • 60
  • 50
  • 40
  • 30

5 10 15 20 25 30 35 40 45

Pin [dBm] M [dB]

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SLIDE 12

Modulation

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SLIDE 13

Modulation

Pin = -60 dBm f = 5.8 GHz

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SLIDE 14

Modulation

Pin = -60 dBm f = 5.8 GHz

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fm = 250 kHz

0.4002 0.4002 0.4003

  • 6.2
  • 2.2

1.8 5.8 t [s] Amplitude - [mV] I - channel Q - channel

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SLIDE 15

Modulation

fm = 1.25 MHz

Pin = -60 dBm f = 5.8 GHz

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fm = 250 kHz

0.4002 0.4002 0.4003

  • 6.2
  • 2.2

1.8 5.8 t [s] Amplitude - [mV] I - channel Q - channel

0.4002 0.4002 0.4003

  • 6.2
  • 2.2

1.8 5.8 t [s] Amplitude - [mV] I - channel Q - channel

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SLIDE 16

Modulation

Pin = -60 dBm f = 5.8 GHz

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0xA4

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SLIDE 17

Wireless Backscattering

Forward link

  • EIRP: -14 dBm, rF = 7m
  • Pt = -73 dBm, Pout = - 55dBm/-80 dBm

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SLIDE 18

Wireless Backscattering

Backward link

  • PT = -20 dBm
  • GT = Gt = 6 dB
  • fm = 250 kHz, rF = 23.3 m
  • M = 38 dB

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Square wav e generator Tag

  • Sig. Gen. +
  • Spec. Analy zer

Tx/Rx Ant

23.3 m

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SLIDE 19

Comparison with an ideal semi-passive tag

19 10

1

10

2

10

3

10

4

  • 140
  • 130
  • 120
  • 110
  • 100
  • 90
  • 80
  • 70
  • 60

Range [m] PR

min

[dBm]

Range of tag prototype Range of ideal semi-passive tag Reader sensitivity [2]

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SLIDE 20

Conclusions

High communication ranges and long lasting power supplies are possible thanks to:

  • High reflection gains (above 40 dB)
  • Low power consumption (29 μW)
  • High sensitivity: (-90 dBm)

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  • 2

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  • 1

10 10

1

10

2

10

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5 8 11 14 17 20 23 26 29 32 35 38 41 44 Bias Power [mW] Gain [dB] State of the art for reflection amplifiers This work: tunnel diode-based reflection amplifiers

Kimionis2014 Chan2013 Chan2011 Lazaro2013 Cantu2008 Cantu2006 Dalman72

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Technology Power Consumption Distances Tdiode tag (semi-passive) 29 μW 480 m to 4 km BLE (active) 33.3 μW 150 m 802.11n (active) 100 mW 200 m

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SLIDE 21

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SLIDE 22

Extra slides

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SLIDE 23

Semiconductors

Energy band diagram, diode

I V

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SLIDE 24

Degenerate Semiconductors

I V

Semiconductors heavily doped with donors (n-type) have the Fermi level up inside the conduction band Semiconductors heavily doped with acceptors (p-type), have the Fermi level inside the valence band When a p-n junction is formed, a thin junction region is created as result of keeping the continuity of the Fermi level This results in a finite probability that electrons

  • vercome the energy barrier when a small

biasing voltage is applied (quantum tunneling [3])

Tunnel Diode

24

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SLIDE 25

The design

Aeroflex Metelics MBD5057-E28 Tunnel diode equivalent circuit

25

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SLIDE 26

26

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SLIDE 27

Reflection Amplifier Characterization (1/2)

Vector Analyzer

  • Optimum bias voltage: 80 mV
  • Measured current: 566 μA
  • Pbias = 45.28 μW

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SLIDE 28

Reflection Amplifier Characterization (1/2)

Vector Analyzer

  • Optimum bias voltage: 90 mV
  • Measured current: 525 μA
  • Pbias = 47.25 μW

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SLIDE 29

Reflection Amplifier Characterization (1/2)

Vector Analyzer

  • Δφ1 = 45˚
  • Δφ2 = 53˚

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SLIDE 30

Reflection Amplifier Characterization (2/2)

  • At what RF input power levels is the gain available?
  • What is the bandwidth of the reflection amplifier?
  • How does the gain change with bias voltages?

Signal Generator Reflection Amplifier Signal Analyzer

  • Sig. Gen. E8247C
  • Sig. An. CXA-N9000A
  • Res BW: 3 kHz
  • Video BW: 100 kHz
  • Span: 1 MHz
  • Avg: 10
  • Points: 1001

Attenuators

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SLIDE 31

Signal Generator Reflection Amplifier Signal Analyzer

Reflection Amplifier Characterization (2/2)

  • Used bias powers: 45 μW and 47 μW
  • Max gains: 34.4 dB and 22.1 dB
  • Input frequencies: 5.45 GHz, 5.55 GHz

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SLIDE 32

Signal Generator Reflection Amplifier Signal Analyzer

Reflection Amplifier Characterization (2/2)

  • Used bias voltages: 80 and 90 mV
  • Input powers: -70 dBm and -60 dBm

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SLIDE 33

Signal Generator Reflection Amplifier Signal Analyzer

Reflection Amplifier Characterization (2/2)

  • Input frequencies: 5.45 GHz and 5.55 GHz
  • Input powers: -70 dBm and -60 dBm

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